RJK0328DPB中文资料

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REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Page 1 of 6

RJK0328DPB Silicon N Channel Power MOS FET Power Switching

REJ03G1637-0400 Rev.4.00 Apr 10, 2008

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.6 mΩ typ. (at VGS = 10 V) • Pb-free

Outline RENESAS Package code: PTZZ0005DA-A(Package name: LFPAK)

GD

SSS4

123

51, 2, 3 Source4 Gate5 Drain123

4

5

Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A Drain peak current ID(pulse)Note1 240 A Body-drain diode reverse drain current IDR 60 A Avalanche current IAP Note 2 30 A Avalanche energy EAR Note 2 90 mJ Channel dissipation Pch Note3 65 W Channel to Case Thermal Resistance θch-C 1.93 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C

元器件交易网www.cecb2b.comRJK0328DPB REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Page 2 of 6

Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, ID = 1 mA RDS(on) — 1.6 2.1 mΩ ID = 30 A, VGS = 10 V Note4 Static drain to source on state

resistance RDS(on) — 2.1 2.9 mΩ ID = 30 A, VGS = 4.5 V Note4

Forward transfer admittance |yfs| — 100 — S ID = 30 A, VDS = 10 V Note4 Input capacitance Ciss — 6380 — pF Output capacitance Coss — 1150 — pF Reverse transfer capacitance Crss — 330 — pF

VDS = 10 V, VGS = 0, f = 1 MHz

Gate Resistance Rg — 0.7 — Ω Total gate charge Qg — 42 — nC Gate to source charge Qgs — 15 — nC Gate to drain charge Qgd — 8.8 — nC

VDD = 10 V, VGS = 4.5 V, ID = 60 A

Turn-on delay time td(on) — 9.4 — ns Rise time tr — 4.3 — ns Turn-off delay time td(off) — 61.5 — ns Fall time tf — 7.3 — ns

VGS = 10 V, ID = 30 A, VDD ≅ 10 V, RL = 0.33 Ω,

Rg = 4.7 Ω

Body–drain diode forward voltage VDF — 0.78 1.02 V IF = 60 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 42 — ns IF = 60 A, VGS = 0 diF/ dt = 100 A/ µs Body–drain diode reverse recovery charge Qrr — 46 — nC

Notes: 4. Pulse test

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REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Page 3 of 6

Main Characteristics Drain to Source Voltage VDS (V)Drain Current ID (A)Typical Output CharacteristicsDrain Current ID (A)Drain Current ID (A)

Channel Dissipation Pch

(

W)

Case Temperature Tc (°C)Power vs. Temperature DeratingGate to Source Voltage VGS (V)Drain to Source Saturation Voltage VDS (on) (mV)Drain to Source Saturation Voltage vs.Gate to Source VoltageGate to Source Voltage VGS (V)Typical Transfer CharacteristicsDrain to Source Voltage VDS (V)Maximum Safe Operation Area

Drain Current ID (A)

Static Drain to Source on State Resistancevs. Drain Current

10080604020

0246810

10080604020

012345

Tc = 75°C25°C–25°C

80604020

050100150200

VDS = 10 VPulse Test

VGS = 2.6 V

Pulse Test

10.30.13030011010010003

20015010050048121620

Pulse TestID = 20 A

10 A

103VGS = 4.5 V

10 V

2.8 V3.0 V10 V3.2 V4.5 VPulse Test

0.1110100

10100100010.1

DC

Opera

tio

n

100

µs

PW = 10 ms1 ms

10

µs

Operation inthis area islimited by RDS(on)

Tc = 25°C1 shot Pulse

5 ADra

i

n to Source on State Resistance RDS (on) (mΩ

)

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