RB085B-90中文资料

  • 格式:pdf
  • 大小:216.20 KB
  • 文档页数:4

FORWARD VOLTAGE:VF(mV)
780
n=30pcs
770
760
750
AVE:715.7mV AVE:766.6mV σ:1.7301mV
740
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISPERSION MAP AVE:136.0A 1cyc 8.3ms
Ifsm
10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
IM=100mA
IF=5A
15
PEAK SURGE FORWARD CURRENT:IFSM(A)
30 25 20 15 10 5 AVE:7.40ns 0 trr DISPERSION MAP Mounted on epoxy board Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 100
元器件交易网
RB085B-90
Diodes
Electrical characteristic curves
10 Ta=150℃ 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=-25℃ 1000 100 Ta=25℃ 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 90 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=-25℃ 100000 Ta=150℃ Ta=125℃ Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz
0
0.01
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
0.1
1000
0
5 10 15 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
20
Rev.B
2/3
元器件交易网
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
RB085B-90
Diodes
10
30 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0A 0V 20 DC D=1/2 10 T Io t VR D=t/T VR=45V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
100
10
0.01
0.001
790
Ta=25℃ Ta=25℃ IF=10A IF=5A n=30pcs
200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 0 AVE:14.3uA Ta=25℃ VR=90V n=30pcs
550 540 530 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 510 500 490 480 470 460 450 AVE:498.5pF Ta=25℃ f=1MHz VR=0V n=10pcs
Ifsm t
1ms
time
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W) 10
D=1/2 DC Sin(θ=180)
300us
10 Rth(j-c) 1
100
5
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
30 0A 0V 20 DC D=1/2 10 Sin(θ=180) T Io t VR D=t/T VR=45V Tj=150℃
8 REVERSE POWER DISSIPATION:PR (W)
6 Sin(θ=180) 4 D=1/2 DC 2
Sin(θ=180) 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150
7.5±0.05
10.1±0.1
6.8±0.1
8.0±0.1
φ3.0±0.1
0~0.5
13.5±0.2
10.1±0.1 2.7±0.2
TL
Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current(*1) Io Forward current surge peak (60Hz・1cyc)(*1) IFSM Junction temperature Tj Storage temperature Tstg (*1)Business frequencies, Rating of R-load, Tc=85℃ Max. Electrical characteristic (Ta=25°C)