EL2480CS高速运放

48RHAL248Rto 6the following on a single silicon chip HAL2Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivitymicro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.is special made for low operation voltage, 1.65V , to active the chip which is includes : voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation.The package type is in a Halogen Free version has been verified by third party Lab.Features and Benefits● CMOS Hall IC Technology ● Strong RF noise protection● 1.65 V for battery-powered applications● Omni polar, output switches with absolute value of North or South pole from magnet ● Operation down to 1.65V , Micro power consumption ● High Sensitivity for reed switch replacement applications ● Multi Small Size option●Low sensitivity drift in crossing of Temp. range●Ultra Low power consumption at 5uA (Avg) ● High ESD Protection, HBM > ±4KV( min ) ● Totem-pole outputApplications● Solid state switch● Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip VideoSet)● Lid close sensor for battery powered devices● Magnet proximity sensor for reed switch replacement in low duty cycle applications ● Water Meter ● Floating Meter ● PDVD ● NB48R HAL2707061.65.87/ UAC1：10nF C2：100pFAbsolute Maximum Ratings At(Ta=25℃)CharacteristicsValues Unit Supply voltage,(V DD ) V Output V oltage,(V out )V Reverse V oltage , (V DD ) (V OUT ) -0.3 V Magnetic flux density UnlimitedGauss Output current,(I OUT )1 mAOperating temperature range, (Ta ) -40 to +85 ℃ Storage temperature range, (Ts ) -65 to +150℃ Maximum Junction Temp,(Tj ) 150℃Thermal Resistance(θJA ) S 310 / 540 / 206 / 543 ℃/W (θJC ) 223 / 390 / 148 / 410 ℃/W Package Power Dissipation, (P D )400 / 230 / 606 / 230mWNote: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability.Electrical SpecificationsDC Operating Parameters ：Ta=25℃, V DD =1VParametersTest ConditionsMinTypMaxUnitsSupply V oltage,(V DD ) Operating V Supply Current,(I DD ) Awake State 1.4 3 mA Sleep State 3.6 7 μA Average 5 10 μA Output Leakage Current,(I off ) Output off1uA Output High Voltage,(V OH ) I OUT =0.5mA(Source) V DD -0.2V Output Low Voltage,(V OL ) I OUT =0.5mA(Sink) 0.2 V Awake mode time,(T aw ) Operating 40 uS Sleep mode time,(T SL ) Operating 40 mS Duty Cycle,(D,C )0.1 % Electro-Static DischargeHBM4KVTypical Application circuitVccT / UAST / UA ST7HAL248R248R 4040404040402206VST Package ESTMagnetic SpecificationsDC Operating Parameters ：Ta=25℃, V DD =1.8VParameterSymbolTest ConditionsMin.Typ.Max. UnitsOperatingPointB OPS Npole tobranded side,B > BOP, V out OnGauss B OPNS pole to branded side,B > BOP, V out On--0 Gauss ReleasePointB RPSN pole to branded side,B < BRP, V out Off 1020 GaussB RPN Spole to branded side,B < BRP, V out Off-20-10GaussHysteresisB HYS|BOPx -BRPx|10GaussOutput Behavior versus Magnetic Pol arDC Operating Parameters ：Ta= -40 to 85℃, Vdd=1.8VtoParameterTest conditionOUT(ST)Test conditionOUT(SN)South poleB<Bop[(-)~(-10)]LowB<Bop[(-)~(-10)] Low Null or weak magnetic fieldB=0 or B < BRPHighB=0 or B < BRPHighNorth poleB>Bop(~10)LowB>Bop(~10)LowNorth Pole South PoleVsatMagnetic Flux Density in Gauss248REST4Performance GraphTypical Supply Voltage(V DD ) Versus Flux DensityTypical Temperature(T A ) Versus Flux DensityTypical Temperature(T A ) Versus Supply Current(I DD )Typical Supply Voltage(V DD ) Versus Supply Current(I DD )Typical Supply Voltage(V DD ) Versus Output Voltage(V DSON )Typical Temperature(T A ) Versus Output Voltage(V DSON )HALLWEE Electronics CO, . LTDＨＡＬ２４８ＲPackage Power DissipationThe power dissipation of the Package is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θJA , the thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be calculated as follows:aj J(max)D R Ta -T P θ=The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature Ta of 25°C, one can calculate the power dissipation of the device which in this case is 400 milliwatts.400mW C/310C25-C 150(ST)P W D =°°°=The 310℃/W for the ST package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to achieving higher power dissipation from the Package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.248R--code of evice3. MarkingSensor Location, package dimension and markingST Package(TSOT-23) Hall Plate Chip Location(Top View) (Bottom view)1230.80LocationNOTES: 1.PINOUT (See Top View at left:) Pin 1 V DD 2.Controlling dimension: mm;Pin 2 GND Pin 3 Output H--Hallwee2H248R。

Infineon 2ED4820-EM 48V智能高边MOSFET栅极驱动器方案Infineon公司的2ED4820-EM是用于48V汽车应用的栅极驱动器,具有功能强大的栅极输出,能驱动并联的多个MOSFET,以最大限度降低导通损耗.由于它的两种栅极输出,它支持背对背的配置,共源和共漏两种结构.在共源极配置,一个栅极输出能用来预充电大容性负载. 2ED4820-EM产生栅极输出的电源,它是基于集成具有外接泵和箱式电容的一级电荷泵.器件具有SPI接口,用于容易配置,诊断和控制.器件的电源电压从20V到70V,具有两个独立的高边栅极驱动器输出,1A下拉和0.3A上拉用于快速开关的接通/关断.在睡眠模式低电源电流BAT_Q小于5 μA.器件具有以下的保护特性:电源欠压和过压检测并具有可配置重器计时器,电荷欠压检测,栅极到源极欠压检测,可配置漏极到源极过压检测,可配置过流检测以及内部超温告警和保护.主要用在48V电池保护开关,用于DC/DC转换器,马达控制单元等的48V输入保护,48V汽车继电器和保险丝替代品.本文介绍了2ED4820-EM主要特性,框图, 48V电池主开关应用框图和菊花链连接图,以及评估板2ED4820-EM EB2 2HSV48主要特性,电路图,材料清单和PCB设计图.2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses. It supports the back-to-back configuration, both common source and common drain structures, thanks to its two gate outputs.In common source configuration, one gate output can be used to pre-charge highly capacitive loads.2ED4820-EM generates the supply for the gate outputs based on an integrated one-stage charge pump with external pump and tank capacitors.2ED4820-EM comes with an SPI interface, for easy configuration, diagnosis and control.Several protection mechanisms are provided:• Supply under- and overvoltage detection with configurable restart timer• Charge pump undervoltage detection• Gate to source undervoltage detection with immediate lock-out to prevent linear mode conduction of the MOSFETs• Config urable drain to source overvoltage detection, which can also be deactivated• Configurable overcurrent protection based on an analog current sense amplifier compatible for high-side or low-side shunt topologies• Internal overtemperature warning and protec tionAn interrupt pin informs the MCU whenever one of these protections is triggered. Status registers can then be read by the MCU to understand what was the trigger for the notification.The output of the current sense amplifier can be monitored by the MCU to implement additional protections, such as wire overtemperature.In addition, 2ED4820-EM enables to implement an open load detection mechanism, checking the source voltage of the MOSFETs with respect to ground in the OFF state.2ED4820-EM主要特性:• Exte nded supply voltage range: 20 - 70 V• Two independent high-side gate driver outputs• 1 A pull down, 0.3 A pull up for fast switch off/on• Device control, configuration and diagnostic via SPI• Low supply current in sleep mode IBAT_Q < 5 μA• Supports ba ck-to-back MOSFET topologies (common drain and common source)• One bidirectional high or low-side analog current sense interface with configurable gain • Configurable overcurrent/short circuit protection• Gate undervoltage lock-out• Safe state mode (bot h channels OFF) activated by direct input pin• Ground loss detection2ED4820-EM潜在应用:• 48 V battery protection switch• 48 V input protection switch for DCDC converters, motor control unit etc.• 48 V relay and fuse replacement图1. 2ED4820-EM 48V电池主开关应用框图图2. 2ED4820-EM框图图3. 2ED4820-EM菊花链连接图图4. 2ED4820-EM 48V电池保护开关应用框图图5. 2ED4820-EM共漏极高边电流检测应用框图应用电路的材料清单:评估板2ED4820-EM EB2 2HSV48The 2ED4820-EM EB2 2HSV48 from Infineon Technologies is a flexible evaluation board designed to showcase the capabilities of the 2ED4820-EM. This board includes Infineons XMC1100 XMC2Go daughter board to interface to a PC over a USB cable. A graphical user interface (GUI), called Config Wizard for 2ED4820 EB, is provided via Infineon Development center. It running on a Windows PC, to control, configure and diagnoze the 2ED4820-EM.图6. 评估板2ED4820-EM EB2 2HSV48外形图图7. 评估板2ED4820-EM EB2 2HSV48电源部分概述图评估板2ED4820-EM EB2 2HSV48主要特性:• The evaluation board is able to deliver a continuous DC current up to 20A per channelIt comes with a jumper-based configurability, to test various topologies.The various configurations include:o Power MOSFETs configured either in common drain or common source topologieso High side or low side current senseo Optional capacitor pre-charge resistive channel, driven either by one channel of the 2ED4820-EM or by a discrete level shifter supplied by the charge-pump of 2ED4820-EM.• The board comes with any test points on the edges of the board to easily check signals with a n oscilloscope.• A USB interface (XMC2GO) is provided, to drive the SPI serial interface of 2ED4820-EM from a PC • A graphical user interface running on a PC allows to control, configure and diagnose the 2ED4820-EM图8. 评估板2ED4820-EM EB2 2HSV4和PC与电源连接图图9. 评估板2ED4820-EM EB2 2HSV4低边电流检测配置图图10. 评估板2ED4820-EM EB2 2HSV4高边电流检测配置图图11. 评估板2ED4820-EM EB2 2HSV4电路图(1):电源部分图12. 评估板2ED4820-EM EB2 2HSV4电路图(2):栅极驱动器部分评估板2ED4820-EM EB2 2HSV4材料清单:图13. 评估板2ED4820-EM EB2 2HSV4 PCB设计图:顶层和底层图14. 评估板2ED4820-EM EB2 2HSV4 PCB设计图:内层图15. 评估板2ED4820-EM EB2 2HSV4 PCB设计图:顶层装配图。

盛年不重来，一日难再晨。

及时宜自勉，岁月不待人。

1. 80C196单片机概述单片微型计算机(Single-Chip Microcomputer) 简称为单片机。

它在一块芯片上集成了微型计算机的各个组成部件：微处理器(MPU) 或中央处理器(CPU) ，存储器( 包括随机存储器RAM 和只读存储器ROM)和各种I/O 接口电路( 例如并行I/O 接口电路，串行I/O 接口电路，定时器/ 计数器电路，A/D 和D/A 转换器电路等) 。

换句话说, 一块芯片就是一台微型计算机。

由于一块芯片上集成了微型计算机的各个功能部件，因此用单片机构成的控制系统结构紧凑、体积小、价格便宜。

当用于工业环境时，单片机构成的系统更具有可靠性高、抗干扰能力强的优点。

到目前为止，单片机已经被广泛地应用于智能化产品和工业自动化控制设备上。

1.1 MCS-96系列单片机1.1.1 Intel 公司单片机Intel 公司1971年首先推出了微处理器(4004)，之后Intel 公司在研制通用微处理器(8080/85、8086/88 ，80186 、80286 、80386 、80486 、P5) 的同时，从1976年开始推出了8048(MCS-48)、8051(MCS-51)、8096(MCS-96)和80960 等4 个单片机系列产品。

Intel 公司的单片机主要面向控制领域，因此也称为微控制器(MicroController) 。

Intel 公司的单片机是目前国际和国内的主流单片机，应用最为广泛，被誉为“标准工业控制器”。

Intel 公司的单片机系列中，MCS-48系列是最早推出的低挡8 位机；1980年推出的MCS- 51系列单片机属于高档8 位机。

与MCS-48系列单片机相比，MCS-51系列单片机硬件上增加了串行接口，寻址范围从4KB 增大到64KB；软件上增加了减法运算和乘除运算以及布尔运算指令，并且指令的执行速度比MCS-48系列有较大的提高。

调试手册奥的斯电梯有限公司文件编号：OH-CONB863_SUR_ZH原始会签记录授权AUTH. CAL4804部件版本This work and the information it contains are the property of Xizi Otis Elevator Company (“XOEC”). It is delivered～others on the express condition that it will be used only for, or on behalf of, XOEC; that neither it nor the information it contains will be reported or disclosed, in whole or in part, without the prior written consent of XOEC, and that on demand it and any copies will be promptly returned～XOEC.目录1概述.............................................................................................................. 错误!未定义书签。

2检修模式运行条件检查 ................................................................................ 错误!未定义书签。

3检修模式GECB上电检查 ............................................................................. 错误!未定义书签。

4变频器参数设置 ........................................................................................... 错误!未定义书签。

最实用的场效应管参数07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。