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KSP2222A中文资料

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©2001 Fairchild Semiconductor CorporationRev. A1, June 2001KSP2222A

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%* Also available as and PN2222ASymbolParameterValueUnitsVCBOCollector-Base Voltage75V

VCEOCollector-Emitter Voltage40V

VEBOEmitter-Base Voltage6V

ICCollector Current600mA

PCCollector Power Dissipation625mW

TJJunction Temperature150°C

TSTGStorage Temperature-55 ~ 150°C

SymbolParameterTest ConditionMin.Typ.Max.UnitsBVCBOCollector-Base Breakdown VoltageIC=10µA, IE=075V

BVCEOCollector Emitter Breakdown VoltageIC=10mA, IB=040V

BVEBOEmitter-Base Breakdown VoltageIE=10µA, IC=06V

ICBOCollector Cut-off CurrentVCB=60V, IE=00.01µA

IEBOEmitter Cut-off CurrentVEB=3V, IC=010nA

hFEDC Current GainIC=0.1mA, VCE=10V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, *IC=150mA VCE=10V, *IC=500mA35507510040300

VCE (sat)* Collector-Emitter Saturation VoltageIC=150mA, IB=15mAIC=500mA, IB=50mA 0.31VV

VBE (sat)* Base-Emitter Saturation VoltageIC=150mA, IB=15mAIC=500mA, IB=50mA 0.61.22VV

fTCurrent Gain Bandwidth ProductVCE=20V, IC=20mAf=100MHz 300MHz

CobOutput CapacitanceVCB=10V, IE=0, f=1MHz 8pF

tONTurn On TimeVCC=30V, IC=150mAIB1=15mA, VBE(off)=0.5V 35ns

tOFFTurn Off TimeVCC=30V, IC=150mAIB1=IB2=15mA285ns

NFNoise FigureIC=100µA, VCE=10VRS=IKΩ, f=1KHz4dBKSP2222A

General Purpose Transistor

•Collector-Emitter Voltage: VCEO= 40V•Collector Power Dissipation: PC (max)=625mW•Refer KSP2222 for graphs

1. Emitter 2. Base 3. CollectorTO-921元器件交易网www.cecb2b.com

0.46 ±0.10

1.27TYP

(R2.29)3.86MAX[1.27 ±0.20]1.27TYP[1.27 ±0.20]

3.60 ±0.2014.47 ±0.40

1.02 ±0.10(0.25)4.58 ±0.204.58+0.25–0.15

0.38+0.10–0.05

0.38+0.10–0.05TO-92Package Demensions

©2001 Fairchild Semiconductor CorporationRev. A1, June 2001KSP2222A

Dimensions in Millimeters元器件交易网www.cecb2b.com

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

©2001 Fairchild Semiconductor CorporationRev. H3TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet IdentificationProduct StatusDefinition

Advance InformationFormative or In DesignThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification NeededFull ProductionThis datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

ObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®

FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®

QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER®

SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET®

VCX™

STAR*POWER is used under license元器件交易网www.cecb2b.com

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2SD2260资料

2SD2260资料

1Transistor

2SD2260

Silicon NPN triple diffusion planer type

For high breakdown voltage general amplification

sFeatures

qHigh collector breakdown voltage.

qLow collector to emitter saturation voltage VCE(sat).

qAllowing supply with the radial taping.

sAbsolute Maximum Ratings (Ta=25˚C)Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature1:Emitter2:Collector3:BaseMT1 Type Package6.9±0.11.05±0.052.5±0.1

3.5±0.1

14.5±0.5(1.45)0.80.74.00.15

0.850.8

1.00.65 max.

0.45+0.1 –0.05

0.45+0.1 –0.052.5±0.52.5±0.5

2.5±0.1123Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

TstgRatings

400

400

5

100

70

600

150

–55 ~ +150Unit

V

V

V

mA

mA

mW

˚C

˚C

sElectrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

KST2222A中文资料

KST2222A中文资料

KST2222A中⽂资料

KST2222A

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T a =25°C unless otherwise noted

Electrical Characteristics T a =25°C unless otherwise noted

* Pulse Test: PW ≤300µs, Duty Cycle ≤2%

Symbol Parameter

Value Units V CBO Collector-Base Voltage 75V V CEO Collector-Emitter Voltage 40V V EBO Emitter-Base Voltage 6V I CCollector Current

600mA P C Collector Power Dissipation 350mW T STG

Storage Temperature

150

°C

Symbol Parameter

Test Condition

Min.Max.

Units BV CBO Collector-Base Breakdown Voltage I C =10µA, I E =075V BV CEO Collector-Emitter Breakdown Voltage I C=10mA, I B =040V BV EBO Emitter-Base Breakdown Voltage I E =10µA, I C =06

V I CBO Collector Cut-off Current V CB =60V, I E =00.01µA

h FE

* DC Current Gain

V CE =10V, I C =0.1mA V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, I C =150mA V CE =10V, I C =500mA35507510040300V CE (sat)* Collector-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.31.0V VV BE (sat)* Base-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA

PN2222A;中文规格书,Datasheet资料

PN2222A;中文规格书,Datasheet资料

PN2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATA

sSILICON EPITAXIAL PLANAR NPNTRANSISTORsTO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYsTHE PNP COMPLEMENTARY TYPE ISPN2907AAPPLICATIONS sWELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENTsSMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEINTERNAL SCHEMATIC DIAGRAM

February 2003 ABSOLUTE MAXIMUM RATINGSSymbolParameterValueUnitVCBOCollector-Emitter Voltage (IE = 0)75VVCEOCollector-Emitter Voltage (IB = 0)40VVEBOEmitter-Base Voltage (IC = 0)6VICCollector Current0.6AICMCollector Peak Current (tp < 5 ms)0.8AP

totTotal Dissipation at Tamb = 25 oC500mWTstgStorage Temperature-65 to 150o

CTjMax. Operating Junction Temperature150oC®

Ordering CodeMarkingPackage / ShipmentPN2222APN2222ATO-92 / BulkPN2222A-APPN2222ATO-92 / Ammopack

TO-92BulkTO-92Ammopack

SBT2222中文资料

SBT2222中文资料

KST-2037-001 1 SBT2222NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907 Ordering Information Type NO. Marking Package Code SBT2222 1B SOT-23 Outline Dimensions unit : mm PIN Connections 1. Base 2. Emitter 3. Collector Semiconductor 2.3~2.5 1.2~1.4 0.45~0.60 0.4 Typ. 2.8~3.0 1.12 Max. 0.38 0~0.1 0.094~0.174 3 1 2 1.90 Typ. 0.2 Min. 元器件交易网 KST-2037-001 2 SBT2222 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Collector dissipation PC* 350 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.6mm Electrical Characteristics Ta=25°C Characteristic SymbolTest Condition Min. Typ. Max.UnitCollector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 20 nA DC current gain hFE VCE=10V, IC=10mA 100 - - - Collector-Emitter saturation voltage VCE(sat) IC=150mA, IB=15mA - - 0.4 V Transition frequency fT VCE=20V, IC=20mA, f=100MHz 250 - - MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - - 8 pF Delay time td - - 10 ns Rise time tr VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc - - 25 ns Storage time ts - - 225 ns Fall Time tf VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc - - 60 ns 元器件交易网 KST-2037-001 3 SBT2222 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 4 Cob-VCB Fig. 3 VCE(sat)-IC 元器件交易网 KST-2037-001 4 SBT2222 These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipm-ents which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, trafficsignal, combustion central, all types of safety device, etc.). AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK. 元器件交易网