FDN338P
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Device Marking .338 Device FDN338P Reel Size 7’’ Tape width 8mm Quantity 3000 units
©2001 Fairchild Semiconductor Corporation
FDN338P Rev F(W)
Electrical Characteristics
0.0001 0 0.2 0.4 0.6 0.8 1 1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.42
(Note 2)
–0.42 –0.7 –1.2
A V
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad.
3
2
-2.5V -3.0V -3.5V -4.5V
1
0 -V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
FDN338P
September 2001
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Symbol
BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
–20
Typ
Max Units
V
Off Characteristics
Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Hale Waihona Puke FDN338P Rev F(W)
FDN338P
Typical Characteristics
5 V GS = -4.5V -3.5V 4 -ID , DRAIN CURRENT (A) -2.5V -2.0V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 VGS = -2.0V 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 0 1 2 3 4 5 -I D, DRAIN CURRENT (A) 2.2
–0.4
–0.8 2.7 88 117 116
–1.5
V mV/°C
115 155 165
mΩ
ID(on) gFS
–5 6
A S
V DS = –5 V,
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
–16 –1 100 –100
mV/°C µA nA nA
V GS = 8 V, V GS = –8 V,
V DS = 0 V V DS = 0 V
On Characteristics
V GS(th) ∆V GS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
FDN338P Rev F(W)
FDN338P
Typical Characteristics
5 I D = -1.6A -V GS, GATE-SOURCE VOLTAGE (V) 4 -15V V DS = -5V -10V
600 f = 1MHz VG S = 0 V CISS 400
500
3
Features
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ V GS = –4.5 V RDS(ON) = 155 mΩ @ V GS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTT M -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
(Note 2)
V DS = –10 V, f = 1.0 MHz
V GS = 0 V,
451 75 33
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS V SD
Notes: 1.
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 V GS = 0V 1 TA = 125o C 0.1 25o C 0.01 -55 oC
3
2
1
0.001
0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 -V GS, GATE TO SOURCE VOLTAGE (V)
10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10ms -ID, DRAIN CURRENT (A) 100ms 1 1s 10s DC 0.1 V GS =-4.5V SINGLE PULSE Rθ JA = 270oC/W TA = 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) 25o C 1ms 20
300
2
200
1
CO S S 100 CR S S
0 0 1 2 3 4 5 Q g , GATE CHARGE (nC)
0 0 2 4 6 8 10 12 -V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1.2 1
0.8 0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with Temperature.
5 VDS = - 5V 4 -ID, DRAIN CURRENT (A) TA = -55o C 125o C 25oC
Parameter
Ratings
–20 ±8 –1.6 –5
(Note 1a) (Note 1b)
Units
V V A W °C
0.5 0.46 –55 to +150
©2001 Fairchild Semiconductor Corporation
FDN338P Rev F(W)
Electrical Characteristics
0.0001 0 0.2 0.4 0.6 0.8 1 1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.42
(Note 2)
–0.42 –0.7 –1.2
A V
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad.
3
2
-2.5V -3.0V -3.5V -4.5V
1
0 -V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
FDN338P
September 2001
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Symbol
BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
–20
Typ
Max Units
V
Off Characteristics
Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Hale Waihona Puke FDN338P Rev F(W)
FDN338P
Typical Characteristics
5 V GS = -4.5V -3.5V 4 -ID , DRAIN CURRENT (A) -2.5V -2.0V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 VGS = -2.0V 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 0 1 2 3 4 5 -I D, DRAIN CURRENT (A) 2.2
–0.4
–0.8 2.7 88 117 116
–1.5
V mV/°C
115 155 165
mΩ
ID(on) gFS
–5 6
A S
V DS = –5 V,
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
–16 –1 100 –100
mV/°C µA nA nA
V GS = 8 V, V GS = –8 V,
V DS = 0 V V DS = 0 V
On Characteristics
V GS(th) ∆V GS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
FDN338P Rev F(W)
FDN338P
Typical Characteristics
5 I D = -1.6A -V GS, GATE-SOURCE VOLTAGE (V) 4 -15V V DS = -5V -10V
600 f = 1MHz VG S = 0 V CISS 400
500
3
Features
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ V GS = –4.5 V RDS(ON) = 155 mΩ @ V GS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTT M -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
(Note 2)
V DS = –10 V, f = 1.0 MHz
V GS = 0 V,
451 75 33
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS V SD
Notes: 1.
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 V GS = 0V 1 TA = 125o C 0.1 25o C 0.01 -55 oC
3
2
1
0.001
0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 -V GS, GATE TO SOURCE VOLTAGE (V)
10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10ms -ID, DRAIN CURRENT (A) 100ms 1 1s 10s DC 0.1 V GS =-4.5V SINGLE PULSE Rθ JA = 270oC/W TA = 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) 25o C 1ms 20
300
2
200
1
CO S S 100 CR S S
0 0 1 2 3 4 5 Q g , GATE CHARGE (nC)
0 0 2 4 6 8 10 12 -V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1.2 1
0.8 0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with Temperature.
5 VDS = - 5V 4 -ID, DRAIN CURRENT (A) TA = -55o C 125o C 25oC
Parameter
Ratings
–20 ±8 –1.6 –5
(Note 1a) (Note 1b)
Units
V V A W °C
0.5 0.46 –55 to +150
