Vishay SiliconixSiJ482DPN-Channel 80 V (D-S) MOSFETFEATURES•TrenchFET ® Power MOSFET •100 % R g and UIS Tested•Capable of Operating with 5 V Gate Drive •Material categorization:For definitions of compliance please see /doc?99912APPLICATIONS•DC/DC Primary Side Switch •Synchronous Rectification •High Current SwitchingNotes:a.Based on T C = 25 °C.b.Surface mounted on 1" x 1" FR4 board.c.t = 10 s.d.See solder profile (/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.e.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.f.Maximum under steady state conditions is 65 °C/W.g.Package limited.PRODUCT SUMMARYV DS (V)R DS(on) (Ω) (Max.)I D (A)a, gQ g (Typ.)800.0062 at V GS = 10 V 6024 nC0.0065 at V GS = 7.5 V 0.0095 at V GS = 4.5 VABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)Parameter Symbol Limit U nitDrain-Source VoltageV DS 80VGate-Source VoltageV GS ± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D 60g AT C = 70 °C 60gT A = 25 °C 21.1b, c T A = 70 °C 16.9b, cPulsed Drain Current (t = 300 µs)I DM 100Continuous Source-Drain Diode CurrentT C = 25 °C I S 60gT A = 25 °C 4.5b, cSingle Pulse Avalanche Current L = 0.1 mHI AS 30Single Pulse Avalanche Energy E AS 45mJ Maximum Power DissipationT C = 25 °C P D 69.4W T C = 70 °C 44.4T A = 25 °C 5b, c T A = 70 °C 3.2b, cOperating Junction and Storage T emperature Range T J , T stg - 55 to 150°C Soldering Recommendations (Peak Temperature)d, e 260THERMAL RESISTANCE RATINGSParameter Symbol Typical Maximum U nitMaximum Junction-to-Ambient b, ft ≤ 10 s R thJA 2025°C/WMaximum Junction-to-Case (Drain)Steady State R thJC 1.3 1.8Vishay SiliconixSiJ482DPNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS (T J = 25 °C, unless otherwise noted)Parameter Symbol Test Conditions Min. Typ.Max.U nitStaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA80V V DS Temperature Coefficient ∆V DS /T J I D = 250 µA 36mV/°C V GS(th) Temperature Coefficient ∆V GS(th)/T J - 5.7Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.5 2.7V Gate-Source LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 80 V , V GS = 0 V 1µA V DS = 80 V , V GS = 0 V, T J = 55 °C10On-State Drain Current aI D(on) V DS ≥ 5 V , V GS = 10 V 30ADrain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 20 A 0.00510.0062ΩV GS = 7.5 V , I D = 15 A 0.00540.0065V GS = 4.5 V , I D = 10 A 0.00680.0095Forward T ransconductance a g fsV DS = 10 V, I D = 20 A68S Dynamic bInput Capacitance C iss V DS = 40 V , V GS = 0 V , f = 1 MHz2425pFOutput CapacitanceC oss 1180Reverse Transfer Capacitance C rss100Total Gate Charge Q g V DS = 40 V , V GS = 10 V , I D = 10 A4771nC V DS = 40 V, V GS = 7.5 V, I D = 10 A 36.555V DS = 40 V, V GS = 4.5 V, I D = 10 A 2436Gate-Source Charge Q gs 6.6Gate-Drain Charge Q gd 10.2Output Charge Q oss V DS = 40 V , V GS = 0 V69105Gate Resistance R g f = 1 MHz0.41.12.2ΩTurn-On Delay Time t d(on) V DD = 40 V , R L = 4 ΩI D ≅ 10 A, V GEN = 10 V, R g = 1 Ω1428ns Rise Timet r 1122Turn-Off Delay Time t d(off) 3672Fall Timet f 918Turn-On Delay Time t d(on) V DD = 40 V , R L = 4 ΩI D ≅ 10 A, V GEN = 7.5 V , R g = 1 Ω1632Rise Timet r 1326Turn-Off Delay Time t d(off) 3570Fall Timet f1122Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C60A Pulse Diode Forward Current a I SM 100Body Diode VoltageV SD I S = 4 A0.73 1.1V Body Diode Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/µs, T J = 25 °C4690ns Body Diode Reverse Recovery Charge Q rr 4486nC Reverse Recovery Fall Time t a 21nsReverse Recovery Rise Timet b25Vishay SiliconixSiJ482DPTYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction TemperatureVishay SiliconixSiJ482DPTYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Source-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, Junction-to-AmbientSafe Operating Area, Junction-to-AmbientVishay SiliconixSiJ482DPTYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Current Derating*Power, Junction-to-CasePower, Junction-to-AmbientSiJ482DPVishay SiliconixTYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Normalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data,see /ppg?63728.PowerPAK® SO-8L Case Outline for Non-Al PartsNote•Millimeters will goverLIMETERSINCHESMIN.NOM.MAX.MIN.NOM.MAX.A 1.00 1.07 1.140.0390.0420.045A10.00-0.1270.00-0.005b 0.330.410.480.0130.0160.019b10.440.510.580.0170.0200.023b2 4.804.905.000.1890.1930.197b30.0940.004b40.470.019c 0.200.250.300.0080.0100.012D 5.00 5.13 5.250.1970.2020.207D1 4.80 4.90 5.000.1890.1930.197D2 3.86 3.96 4.060.1520.1560.160D3 1.631.73 1.830.0640.0680.072e 1.27 BSC0.050 BSCE 6.05 6.15 6.250.2380.2420.246E1 4.27 4.37 4.470.1680.1720.176E2 3.18 3.28 3.380.1250.1290.133F --0.15--0.006L 0.620.720.820.0240.0280.032L10.921.07 1.220.0360.0420.048K 0.510.020W 0.230.009W10.410.016W2 2.820.111W3 2.960.117q0°-10°0°-10°ECN: C15-1122-Rev. C, 07-Sep-15DWG: 5976PAD Pattern Vishay SiliconixRECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLELegal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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