2SJ248资料

2SJ248Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

Outline

123TO-220FM

1. Gate2. Drain3. SourceD

G

S2SJ248

2Absolute Maximum Ratings (Ta = 25°C)

ItemSymbolRatingsUnit

Drain to source voltageVDSS–100V

Gate to source voltageVGSS±20V

Drain currentID–8A

Drain peak currentID(pulse)*1–32A

Body to drain diode reverse drain currentIDR–8A

Channel dissipationPch*225W

Channel temperatureTch150°C

Storage temperatureTstg–55 to +150°C

Notes:1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at TC = 25°C2SJ248

3Electrical Characteristics (Ta = 25°C)

ItemSymbolMinTypMaxUnitTest conditions

Drain to source breakdownvoltageV(BR)DSS–100——VID = –10 mA, VGS = 0

Gate to source breakdownvoltageV(BR)GSS±20——VIG = ±100 µA, VDS = 0

Gate to source leak currentIGSS——±10µAVGS = ±16 V, VDS = 0

Zero gate voltage drain currentIDSS——–250µAVDS = –80 V, VGS = 0

Gate to source cutoff voltageVGS(off)–1.0—–2.0VID = –1 mA, VDS = –10 V

Static drain to source on stateRDS(on)—0.250.3ΩID = –4 A, VGS = –10 V*1

resistance—0.30.45ΩID = –4 A, VGS = –4 V*1

Forward transfer admittance|yfs|3.05.5—SID = –4 A, VDS = –10 V*1

Input capacitanceCiss—880—pFVDS = –10 V, VGS = 0,

Output capacitanceCoss—325—pFf = 1 MHz

Reverse transfer capacitanceCrss—80—pF

Turn-on delay timetd(on)—12—nsID = –4 A, VGS = –10 V,

Rise timetr—47—nsRL = 2 Ω

Turn-off delay timetd(off)—150—ns

Fall timetf—75—ns

Body to drain diode forwardvoltageVDF—–1.0—VIF = –8 A, VGS = 0

Body to drain diode reverserecovery timetrr—170—nsIF = –8 A, VGS = 0,diF/dt = 50 A/µs

Note:1.Pulse test

See characteristic curves of 2SJ2472SJ248

4

30

20

10

050100150

Case Temperature Tc (°C)Power vs. Temperature Derating

Channel Dissipation Pch (W)

Drain Current I (A)

Drain to Source Voltage V (V)DSDDC Operation (Tc = 25°C)1 msPW = 10 ms (1shot)100 sµ10 sµ

Operation in this area is limited by R (on)DS

Ta = 25°C–50–30

–10

–3

–1

–0.3

–0.1

–0.05–1–3–10–30–100–300–1000Maximum Safe Operation Area

101001 m10 m100 m1100.010.030.10.31.03

Pulse Width PW (S)Normalized Transient Thermal Impedance s (t)

γ

µµD = 1

0.5

0.2

0.1

0.05

0.02

1 shot PulseTc = 25°C

θch – c(t) = s(t) ch – cch – c = 5.0°C / W. Tc = 25°C

PD = PW TPWTDMγ.θθ

0.01Noremalized Transient Thermal Impedance vs. Pulse Width10.0 ± 0.3

7.0 ± 0.33.2 ± 0.2

12.0 ± 0.30.62.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.12.54.45 ± 0.3

5.0 ± 0.3

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.51.2 ± 0.2

1.4 ± 0.2φ

Hitachi CodeJEDECEIAJWeight (reference value)TO-220FM—Conforms1.8 gUnit: mm元器件交易网www.cecb2b.comCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

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