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2SD2493资料

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153Darlington2SD2493IC–VCE Characteristics (Typical)hFE–I

C Characteristics (Typical)hFE–IC Temperature Characteristics (Typical)θj-a–t CharacteristicsIC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)Pc–Ta DeratingSafe Operating Area (Single Pulse)fT–IE Characteristics (Typical)00246264Collector-Emitter Voltage VCE(V)Collector Current IC(A)IB=0.1mA5mA1mA0.5mA0.4mA0.3mA0.2mA0.020.10.5165Collector Current IC(A)DC Current Gain hFE(VCE=4V)100050020050001000040000Typ0.51511010010005505002000Time t(ms)Transient Thermal Resistance θj-a(˚C/W)064202.521Base-Emittor Voltage VBE(V)Collector Current IC(A)(VCE=4V)125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp)6040203.500255075100125150Ambient Temperature Ta(˚C)Maximum Power Dissipation PC(W)With Infinite heatsinkWithout Heatsink1050531002000.0510.50.110205Collector-Emitter Voltage VCE(V)Collector Current IC(A)DC100ms10ms03210.110.510510050Base Current IB(mA)Collector-Emitter Saturation Voltage VCE(sat)(V)IC=5AIC=3A(VCE=4V)0.020.15160.5Collector Current IC(A)DC Current Gain hFE100050010050001000040000125˚C25˚C–30˚C–0.02–0.1–1–6040208060Cut-off Frequency fT(MHZ)(VCE=12V)Emitter Current IE(A)TypWithout HeatsinkNatural CoolingApplication: Audio, Series Regulator and General PurposeSymbolVCBOVCEOVEBOICIBPCTjTstg2SD249311011056160(Tc=25°C)150–55 to +150UnitVVVAAW°C°CsAbsolute maximum ratings sElectrical CharacteristicsSymbolICBOIEBOV(BR)CEOhFEVCE(sat)VBE(sat)fTCOB2SD2493100max100max110min5000min∗2.5max3.0max60typ55typUnitµAµAVVVMHzpFConditionsVCB=110VVEB=5VIC=30mAVCE=4V, IC=5AIC=5A, IB=5mA IC=5A, IB=5mAVCE=12V, IE=–2AVCB=10V, f=1MHz(Ta=25°C)(Ta=25°C)Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)sTypical Switching Characteristics (Common Emitter)VCC(V)30RL(Ω) 6IC(A)5VBB2(V) –5IB2(mA)–5ton(µs)0.8typtstg(µs)6.2typtf(µs)1.1typIB1(mA) 5VBB1(V) 10External DimensionsMT-100(TO3P)15.6±0.49.619.9±0.34.02.05.0±0.21.8ø3.2±0.1231.05+0.2-0.120.0min4.0maxBE5.45±0.15.45±0.1C4.8±0.20.65+0.2-0.11.42.0±0.1abWeight : Approx 6.0ga. Type No.b. Lot No.BCE(70Ω)Equivalent circuit∗hFE RankO(5000to12000), P(6500to20000), Y(15000to30000)元器件交易网www.cecb2b.com

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2SD系列三极管参数

2SD系列三极管参数

2SD系列三极管参数

2SD1010 SI-N 50V 50mA 0.3W 200MHz

2SD1012 SI-N 20V 0.7A 0.25W 250MHz |

2SD1018 SI-N 250V 4A 80W B>250

2SD1027 N-DARL+D 20V 15A 100W B>1 |

2SD1033 SI-N 200V 2A 20W 10MHz

2SD1036 SI-N 150/120V 15A 150W |

2SD1047 SI-N 160V 12A 100W 15MHz

2SD1048 SI-N 20V 0.7A 0.25W 250MHz |

2SD1049 SI-N 120V 25A 100W

2SD1051 SI-N 50V 1.5A 1W 150MHz |

2SD1055 SI-N 40V 2A 0.75W 100MHz

2SD1062 SI-N 60V 12A 40W 10MHz |

2SD1064 SI-N 60V 12A 80W

2SD1065 SI-N 60V 15A 90W |

2SD1073 N-DARL 300V 4A 40W B>1K

2SD1088 N-DARL 300V 6A 30W B>2000 |

2SD1113K N-DARL+D 300V 6A 40W

2SD1128 N-DARL 150V 5A 30W |

2SD1135 SI-N 80V 4A 40W

2SD1138 SI-N 200V 2A 30W |

2SD2403中文资料

2SD2403中文资料

1998

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Document No. D16156EJ2V0DS00 (2nd edition)Date Published April 2002 N CP(K)Printed in JapanSILICON TRANSISTOR2SD2403

NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGDATA SHEET

2002The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.The 2D2403 is a transistor featuring high currentcapacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES•High current capacitance•Low collector saturation voltage•Complementary transistor with 2SB1572PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)ParameterSymbolConditionsRatingsUnitCollector to base voltageVCBO80VCollector to emitter voltageVCEO60VEmitter to base voltageVEBO6.0VCollector current (DC)IC(DC)3.0ACollector current (pulse)IC(pulse)PW ≤ 10 msduty cycle ≤ 50 %5.0ABase current (DC)IB(DC)0.2ABase current (pulse)IB(pulse)PW ≤ 10 msduty cycle ≤ 50 %0.4ATotal power dissipationPT16 cm2 × 0.7 mm ceramic board mounted2.0WJunction temperatureTj150°CStorage temperatureTstg−55 to +150°C

2SD2059中文资料

2SD2059中文资料

固电半导体INCHANGE SEMICONDUTORInchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2059 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1367 ・Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ・Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IB Base current 0.5 A PC Collector dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol元器件交易网固电半导体INCHANGE SEMICONDUTORInchange Semiconductor Product Specification

2SD555中文资料

2SD555中文资料

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 DESCRIPTION ·With TO-3 package

Fig.1 simplified outline (TO-3) and symbol·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEOCollector-emitter voltage Open base 200 V VEBOEmitter-base voltage Open collector 5 V ICCollector current 10 A PCCollector power dissipation TC=25℃ 200 W TjJunction temperature 150 ℃ TstgStorage temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-CThermal resistance junction to case 1.46 ℃/W 元器件交易网Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAXUNITV(BR)CEOCollector-emitter breakdown voltageIC=50mA ;IB=0 200 V V(BR)EBOEmitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat-1Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VCEsat-2Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V VBEsatBase-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBOCollector cut-off current VCB=250V; IE=0 0.1 mA IEBOEmitter cut-off current VEB=5V; IC=0 0.1 mA hFEDC current gain IC=2A ; VCE=5V 40 200 COBCollector output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF fTTransition frequency IC=1A ; VCE=10V 15 MHz