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EA60QC03L中文资料

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3.5
AVERAGE FORWARD CURRENT (A)
3.0
2.5
RECT 180°.
2.0
SINE WAVE.
1.5
1.0
0.5
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load 50 EA60QC03L/EA60QC03L-F
2 Tj=25°C Tj=150°C 1
0.5
0.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION
EA60QC03L/EA60QC03L-F (Total)
SURGE FORWARD CURRENT (A)
40
30
20
10
I FSM 0.02s
0 0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue EA60QC03L/EA60QC03L-F (per Arm)
SBD
Type :
EA60QC03L EA60QC03L
OUTLINE DRAWING
FEATURES
* TO-251AA Case * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available
Tj= 150 °C 500 EA60QC03L/EA60QC03L-F (per Arm)
PEAK REVERSE CURRENT (mA)
200
100
50
20 0 5 10 15 20 25 30 35
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
EA60QC03L/EA60QC03L-F (Total)
AVERAGE REVERSE POWER DISSIPATION (W)
RECT 180°
8
6
SINE WAVE
4
2
0 0 5 10 15 20 25 30 35
REVERSE VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
RECT 180°
3.5
AVERAGE FORWARD POWER DISSIPATION (W)
3.0
SINE WAVE
2.5
2.0
1.5
1.0
0.5
0 0 1 2 3 4 5 6 7
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Electrical • Thermal Characteristics
Characteristics Peak Reverse Current Peak Forward Voltage Junction to Ambient Thermal Resistance Junction to Case * Print Land = 20x20 mm Symbol Conditions Min Typ Max 3.0 0.45 80 5 Unit mA V °C/W °C/W IRM Tj=25°C,VRM=VRRM per Arm VFM Tj=25°C,IFM= 3 A per Arm Rth(j-a) P.C.Board mounted * Rth(j-c) -
Approx Net Weight:0.35g EA60QC03L 30 50Hz Full Sine Wave Resistive Load Unit V A A A °C °C
6.66 50Hz Full Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150
EA60QC03L OUTLINE DRAWING (Dimensions in mm)
4
1
2
3
4
1
2
3
FORWARD CURRENT VS. VOLTAGE
EA60QC03L/EA60QC03L-F (per Arm)
20
INSTANTANEOUS FORWARD CURRENT (A)
10
5
1000
JUNCTION CAPACITANCE (pF)
500
200
100 0.5 1 2 5 10 20 50
REVERSE VOLTAGE (V)
CASE TEMPERATURE (°C)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
P.C. Board mounted (Plint land=20x20mm) EA60QC03L/EA60QC03L-F (Total)
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage P.C.Board Average Rectified mounted * Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 45 2.0 6.0 Ta=20°C Tc=111°C
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V RM =30 V 7 EA60QC03L/EA60QC03L-F (Total)
RECT 180°. SINE WAVE.
AVERAGE FORWARD CURRENT (A)
6
5
4
3
2ห้องสมุดไป่ตู้
1
0 0 25 50 75 100 125 150

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EA60QC06中文资料

EA60QC06中文资料

SBD
Type :
EA60QC06 EA60QC06
OUTLINE DRAWING
FEATURES
* TO-251AA Case * Dual Diodes Cathode Common * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 30 Volts thru 100 Volts Types Available
500
JUNCTION CAPACITANCE (pF)
200
100
50 0.5 1 2 5 10 20 50 100
REVERSE VOLTAGE (V)
RECT 180° SINE WAVE
5
AVERAGE FORWARD POWER DISSIPATION (W)
4
3
2
1
0 0 1 2 3 4 5 6 7
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage P.C.Board Average Rectified mounted * Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 45 1.5 6.0 Ta=27°C Tc=104°C
维克拉莫尔单晶晶体管电流传感器产品说明书

维克拉莫尔单晶晶体管电流传感器产品说明书

4N E x t G E N E R a t i O NB U S B A R m O d u L E!VSPL/ENG/SC/106-Rev00Dimensions in mmsales @ THIS DATASHEET IS APPLICABLE FOR: elDora VSP.60.aaa.03 (aaa=250-270)CautiON: READ SAFETY AND INSTALLATION MANUAL BEFORE USING THE PRODUCT.Specifications included in this datasheet are subject to change without notice. Electrical data without guarantee. Please confirm your exact requirement with the company representative while placing your order.Performance WarrantyIV CurvesDS-60-P-4BB-E-R0135,3992956.44-7.5 × 7.5 / 2DRAIN HOLEJUNCTION BOX LABEL1000+–2–4⦰GROUNDINGHOLE8-6.5 × 1016-8 × 3.5VENT HOLEINSTALLINGHOLESIDE VIEWBACK VIEWSECTIONAL VIEW OF AL-PROFILE35.325.411.4164013608601000 W/m 2700 W/m 2400 W/m 2200 W/m 2100 W/m 2987654321C u r r e n t (A )VoltAge (V)0 5 10 15 20 25 30 35 40100%90%80%70%60%1 YEAR27 YEARS1 year: 97.5%27 years: 80.1%Electrical Data 1 All data refers to STC (AM 1.5, 1000 W/m 2, 25 °C)Peak Power P max (Wp)250252.5255257.5260262.5265267.5270maximum Voltage V mpp (V)30.4930.5430.6230.7330.8430.8930.9230.9831.03maximum current I mpp (a)8.208.278.338.388.438.508.578.648.704open circuit Voltage V oc (V)37.4437.5137.5937.7737.9537.9038.1238.238.28Short circuit current I sc (a)8.758.808.848.888.938.989.039.099.15module efficiency (%)15.3715.5215.6715.8315.9816.1416.2916.4416.601) STC: 1000 W/m 2 irradiance, 25°C cell temperature, AM 1.5g spectrum according to EN 60904-3.Average relative efficiency reduction of 5% at 200 W/m 2 according to EN 60904-1.Electrical Parameters at NOCT 2Power (W)185.62187.25188.88191.65192.79193.49194.69196.02197.77V @P max (V)27.6527.6927.7227.7727.8227.8627.9027.9528.01I @P max (a) 6.72 6.77 6.82 6.87 6.93 6.96 6.987.027.06V oc (V)35.1635.2535.3535.3635.3635.4235.4835.5335.59I sc (a)7.067.117.167.207.247.317.377.437.492) NOCT irradiance 800 W/m 2, ambient temperature 20°C, wind speed 1 m/secTemperature Coefficients (Tc) permissible operating conditionsTc of open circuit Voltage (β)-0.31%/°CTc of Short circuit current (α)0.058%/°C Tc of Power (γ)-0.41%/°C maximum System Voltage 1000 V nocT45°C ± 2°C Temperature range-40°C to + 85°CMechanical Datalength × Width × Height 1640 × mm × 992 mm × 36 mm Weight 18 kgJunction Box IP67, 3 bypass diodescable & connectors 1000 mm length cables,SOLARLOK PV4 connectors (MC4 compatible)application class Class A (Safety class II)Superstrate High transmission low iron tempered glass, AR coated cells60 polycrystalline solar cells, 4 bus bars cell encapsulant EVA (Ethylene Vinyl Acetate)Back Sheet Composite filmframeAnodized aluminium frame with twin wall profile mechanical load Test 5400 Pa maximum Series fuse rating15 AWarranty and CertificationsProduct Warranty**10 yearsPerformance Warranty**Linear power warranty for 27 years with 2.5% for 1st year degradation and 0.67% from year 2 to year 27approvals and certificatesIEC 61215 Ed2*, IEC 61730*, IEC 61701*, IEC 62716*, CE*, MCS*, PV Cycle, IEC 62804*, CEC (Australia)*Packaging InformationQuantity /Pallet28Pallets/container (40'Hc)28Quantity/container (40'Hc)784* All (*) certifications under progress.** Refer to Vikram Solar’s warranty document for terms and conditions.TECHNICAL DATAELDORA PRIME SERIES。

Avionics Systems L-3 Communications产品手册说明书

Avionics Systems L-3 Communications产品手册说明书


ATA
Revision
Number Level
7100
165E6496-00
03
7100 CVDR
7200
CVDR
FA2100
FA2200
FA2300
FA5000
RDI
RIU
RAU
165E1696-02
03
RI
ROC
ROC/5
ROC/6
ROSE
RAU
165E1696-04
01
ROC/7
ROSE
Revision Date
905E5389-22
1
TP-344
22-00-01 C1
0040-34002-01
H
5/13/2015 4/19/2013
9/16/2015
LearJet Updates CVR AUTOMATED TEST STATION/ RECORDER INTERFACE UNIT (CATS/RIU) Accident Investigation Procedure
1/25/2015 ACCIDENT INVESTIGATION PROCEDURE
11/4/2010 Maintenance Manual with IPL 6/26/2017 GH-3900 Aircraft Configuration Module Tool
Avionics Systems L-3 Communications
Document Index
Last Updated: 8/15/2022 9:11:46 AM
Model Number
Publication Number
ATA Number
STB60NE03L-12中文资料

STB60NE03L-12中文资料

STB60NE03L-12N - CHANNEL 30V - 0.009 Ω - 60A - D 2PAK "SINGLE FEATURE SIZE ™" POWER MOSFETPRELIMINARY DATAsDS(on)s AVALANCE RUGGED TECHNOLOGY s 100% AVALANCHE TESTEDs REPETITIVE AVALANCHE DATA AT 100o C s LOW GATE CHARGEs HIGH CURRENT CAPABILITYs 175o C OPERATING TEMPERATURE sAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size ™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT ®July 1998ABSOLUTE MAXIMUM RATINGSSD DD (BR)DSS j JMAX1/5STB60NE3L1-16THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) OFFON (∗)DYNAMICELECTRICAL CHARACTERISTICS (continued)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODE(•) Pulse width limited by safe operating areaSTB60NE3L1-16STB60NE3L1-16Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A..STB60NE3L1-16。