PTF210901中文资料

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-25
30
Drain Efficiency
-30
25
IM3
-35
20
-40
-45 Gain
-50
15 10 ACPR
-55
5
39
40
41
42
43
44
Output Power, Avg. (dBm)
• Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA
40 35 30 25 20
Gain 15 10
5 2080
Ef f iciency
Input Return Loss
2120
2160
Frequency (MHz)
0 -5 -10 -15 -20 -25 -30 -35 2200
Power Sweep, Pulsed Conditions VDD = 28 V, IDQ = 1050 mA, f = 2140 MHz,
–40 to +150 0.45
Units V µA Ω V µA
Unit V V °C W
W/°C °C
°C/W
Gain (dB), Efficiency (%) Input Return Loss (dB)
Output Power (dBm)
Broadband Circuit Performance VDD = 28 V, IDQ = 1050 mA, POUT = 20 W CW
Data Sheet
4
<--- WAVELENGTHS TOWARD LOAD 0.0 0.1 0.2
0.1
Z0 = 50 Ω
Z Load
2200 MHz 2070 MHz
Z Source
0.1 2200 MHz 2070 MHz
0.2
2004-01-16
Test Circuit
PTF210901
IMD (dBc), ACPR (dBc) Efficiency (%), Gain (dB)
Two–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
45
-5
40
-10
Drain Efficiency
35
-15
30
30
15
-35
10
Gain
-40
5
-45
0
-50
22 24 26 28 30 32 34
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage. Series show current.
vs. Tone Spacing
VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2140 MHz
-20
-25
-30
3rd Order
-35
-40
5th Order
-45
-50
-55
7th Order
-60
0
10
20
30
Tone Spacing (MHz)
pulse period = 1 ms, 0.8% duty cycle
55
54 P-3dB = 51.3 dBm 53
Ideal
52 P-1dB = 50.6 dBm
51
50
49
Actual
48
47
46
45
30 31 32 33 34 35 36 37 38 39 40
Input Power (dBm)
1.03
1.02
7.50 A
9.00 A
1.01
6.00 A
1.00
4.50 A
0.99
3.00 A
1.50 A
0.98
0.97
0.96 -20
5
30
55
80
105
Case Temperature (ºC)
Broadband Circuit Impedance Data
Z Source
D
Z Load
Typical Performance (cont.)
Efficiency (%), Gain (dB) IM3 (dBc)
Normalized Bias Voltage
IM3, Drain Efficiency and Gain
vs. Supply Voltage
IDQ = 1050 mA, f = 2140 MHz, POUT = 90 W PEP, tone spacing = 1 MHz
G S
Frequency MHz 2070 2110 2140 2170 2200
Z Source Ω
R
jX
5.11
–7.00
4.78
–6.74
4.57
–6.50
4.35
–6.30
4.12
–6.11
Z Load Ω
R
jX
2.14
0.62
2.03
0.97
1.99
1.21
1.92
1.45
1.88
1.67
5 0
39 41 43
IM3 45 47
-20 -25 -30 -35 -40 IM5 -45 -50 IM7 -55 -60 -65 49 51
Output Power (dBm), PEP
Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
performance - Average output power = 19 W at –37 dBc - Efficiency = 25% • Typical CW performance - Output power at P–1dB = 105 W - Gain = 15 dB - Efficiency = 53% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power
-20
-25
-30
0.75 A
-35
0.85 A
-40 1.15 A
-45
-50
-55 0.95 A
-60 -65
1.05 A
37 39 41 43 45 47 49 51
Output Power (dBm), PEP
PTF210901
Intermodulation Distortion Products
PTF210901E Package 30248
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, POUT = 19 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
30
-30
Drain Efficiency
25
-35
20
-40
15
-45
Gain
10
-50
ACPR Up
5
-55
ACPR Low
0
-60
34 35 36 37 38 39 40 41 42 43 44
Output Power (dBm), Avg.
Data Sheet
3
2004-01-16
PTF210901
Symbol VDSS VGS TJ PD
TSTG RθJC
Typical Performance in broadband test fixture
Min Typ
65




0.1
2.5
3.2

0.01
Max — 1.0 — 4.0 1.0
Value 65
–0.5 to +12 200 389 2.22
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz