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SD1446中文资料

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.380 4LFL (M113) epoxy sealed
ORDER CODE SD1446
B RA ND IN G SD1446Biblioteka PIN CONNECTION
DESCRIPTION
The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.
3. Base 4. Emitter
Value
Unit
36
V
18
V
3.5
V
12.0
A
183
W
+200
°C
− 65 to +150
°C
1.05
°C/W
1/5
元器件交易网
SD1446
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC
Board Material: Double Sided Copper 1/16” Thick
4/5
元器件交易网
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0113
SD1446
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
2/5
元器件交易网
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
SD1446
FREQ. 50 MHz
POUT = 70W VCE = 12.5V
ZIN (Ω) 0.8 + j 0.9
L3 : 1 1/2 Turns, #12 AWG, Tinned, 3/8” I.D. Loose Wound
L4 : 8 Turns, #18 AWG on 1/4” I.D. Coil form 1/2” Length with Ferrite Slug
L5 : 11 Turns, #16 AWG, Enameled on Torroid, Micrometals, T50-2
C6 : 10µF, 35Vdc, Electrolytic C7 : .01µF Erie
C8 : 1000pF Unelco
L1 : 2 1/2 Turns, #14 Awg, Tinned, 1/4” I.D. Loose Wound
L2 : 10 Turns, #28 AWG, Enameled on Ferroxcube Sleeve #3B
元器件交易网
SD1446
RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS
......50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN
Test Conditions
PIN = 7 W PIN = 7 W PIN = 7 W VCB = 12.5V
VCE = 12.5 V VCE = 12.5 V VCE = 12.5 V
Value Min. Typ. Max.
70 — — 10 — — — 55 — — — 300
Unit
W dB % pF
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
S ymb o l
Test Conditions
BVCBO BVCES BVCEO BVEBO
ICES hFE
IC = 50mA IC = 100mA IC = 50mA IE = 10mA VCE = 15V VCE = 5V
IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A
ZCL (Ω) 1.2 + j 0.6
TYPICAL COLLECTOR LOAD IMPEDANCE
3/5
元器件交易网
SD1446
TEST CIRCUIT
C1, C4 : 50 - 380pF Arco 465 C2 : 110 - 580pF Arco 467 C3 : 140 - 680pF Arco 468 C5 : 9 - 180pF Arco 463
PDISS
Power Dissipation
TJ TSTG
Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector 2. Emitter
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Device Current
Va l u e Unit
Min. Typ. Max.
36 — — V 36 — — V 18 — — V 3.5 — — V — — 10 mA 10 — — —
DYNAMIC
S ymb o l
POUT GP ηc COB
f = 50 MHz f = 50 MHz f = 50 MHz f = 1 MHz

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2SD系列三极管参数

2SD系列三极管参数

2SD系列三极管参数2SD1010 SI-N 50V 50mA 0.3W 200MHz2SD1012 SI-N 20V 0.7A 0.25W 250MHz |2SD1018 SI-N 250V 4A 80W B>2502SD1027 N-DARL+D 20V 15A 100W B>1 |2SD1033 SI-N 200V 2A 20W 10MHz2SD1036 SI-N 150/120V 15A 150W |2SD1047 SI-N 160V 12A 100W 15MHz2SD1048 SI-N 20V 0.7A 0.25W 250MHz |2SD1049 SI-N 120V 25A 100W2SD1051 SI-N 50V 1.5A 1W 150MHz |2SD1055 SI-N 40V 2A 0.75W 100MHz2SD1062 SI-N 60V 12A 40W 10MHz |2SD1064 SI-N 60V 12A 80W2SD1065 SI-N 60V 15A 90W | 2SD1073 N-DARL 300V 4A 40W B>1K2SD1088 N-DARL 300V 6A 30W B>2000 |2SD1113K N-DARL+D 300V 6A 40W2SD1128 N-DARL 150V 5A 30W | 2SD1135 SI-N 80V 4A 40W2SD1138 SI-N 200V 2A 30W | 2SD1140 N-DARL 30V 1.5A 0.9W2SD1145 SI-N 60V 5A 0.9W 120MHz |2SD1148 SI-N 140V 10A 100W 20MHz2SD1153 SI-N 80V 1.5A 0.9W | 2SD1163A SI-N 300V 7A 40W2SD1164 SI-N 150V 1.5A 10W DAR+DI |2SD1173 SI-N+D 1500V 5A 70W2SD1187 SI-N 100V 10A 80W 10MHz |2SD1189 SI-N 40V 2A 5W 100MHz2SD1192 N-DARL+D 70V 10A 40W B=5K |2SD1196 N-DARL+D 110V 8A 40W B=402SD1198 N-DARL 30V 1A 1W 150MHz |2SD1207 SI-N 60V 2A 1W2SD1210 N-DARL+D 150V 10A 80W B=5 |2SD1213 SI-N 60V 20A 50W2SD1225 SI-N 40V 1A 1W 150MHz |2SD1238 SI-N 120V 12A 80W 20MHz2SD1244 SI-N+D 2500/900V 1A 50W |2SD1246 SI-N 30V 2A 0.75W2SD1247 SI-N 30V 2.5A 1W | 2SD1254 SI-N 130V 3A 30W2SD1255 SI-N 130V 4A 35W 30MHz |2SD1263A SI-N 400V 0.75A 35W 30MHz2SD1264 SI-N 200V 2A 30W POWER |2SD1265 SI-N 60V 4A 30W 25kHz2SD1266 SI-N 60V 3A 35W POWER |2SD1267 SI-N 60V 4A 40W 20MHz2SD1270 SI-N 130V 5A 2W 30MHz |2SD1271 SI-N 130V 7A 40W 30MHz2SD1272 SI-N 200V 1A 40W 25MHz |2SD1273 SI-N 80V 3A 40W 50MHz2SD1274 SI-N 150V 5A 40W 40MHz |2SD1276 N-DARL 60V 4A 40W2SD1286 N-DARL+D 60V 1A 8W B=1K-3 |2SD1288 SI-N 120V 7A 70W2SD1289 SI-N 120V 8A 80W | 2SD1292 SI-N 120V 1A 0.9W 100MHz2SD1293 SI-N 120V 1A 1W 100MHz |2SD1297 N-DARL+D 150V 25A 100W2SD1302 SI-N 25V 0.5A 0.6W 200MHz |2SD1306 SI-N 30V 0.7A 150mW 250MHz2SD1308 N-DARL+D 150V 8A 40W |2SD1313 SI-N 800V 25A 200W 6MHz2SD1314 N-DARL+D 600V 15A 150W |2SD1330 SI-N 25V 0.5A 0.6W 200MHz2SD1347 SI-N 60V 3A 1W 150MHz |2SD1348 SI-N 60V 4A 10W 150MHz2SD1350A SI-N 600V 0.5A 1W 55MHz |2SD1376K N-DARL+D 120V 1.5A 40W2SD1378 SI-N 80V 0.7A 10W 120MHz |2SD1379 N-DARL 40V 2A 10W 150MHz2SD1380 SI-N 40V 2A 10W 100MHz |2SD1382 SI-N 120V 1A 10W 100MHz2SD1384 SI-N 40V 2A 0.75W 100MHz |2SD1391 SI-N 1500V 5A 80W2SD1392 N-DARL+D 60V 5A 30W B=800 |2SD1397 SI-N+D 1500V 3.5A 50W2SD1398 SI-N+D 1500V 5A 50W | 2SD1399 SI-N+D 1500V 6A 80W2SD1403 SI-N 1500V 6A 120W | 2SD1404 SI-N+D 300V 7A 25W 1us2SD1405 SI-N 50V 3A 25W 2us | 2SD1406 SI-N 60V 3A 25W 0.8us2SD1407 SI-N 100V 5A 30W 12MHz |2SD1408 SI-N 80V 4A 30W 8MHz2SD1409 N-DARL+D 600V 6A 25W 1us |2SD1411 SI-N 100V 7A 30W 10MHz2SD1413 N-DARL+D 60V 3A 20W .O1US |2SD1415 N-DARL+D 100V 7A 30W 0.8us2SD1426 SI-N+D 1500V 3.5A | 2SD1427 SI-N+D 1500V 5A 80W2SD1428 SI-N+D 1500V 6A 80W |2SD1432 SI-N 1500V 6A 80W2SD1439 SI-N+D 1500V 3A 50W |2SD1441 SI-N+D 1500V 4A 80W2SD1446 N-DARL+D 500V 6A 40W B>50 |2SD1453 SI-N 1500V 3A 50W2SD1457 N-DARL+D 140V 6A 60W |2SD1458 SI-N 20V 0.7A 1W2SD1468 SI-N 30V 1A 0.3..0.4W 150 |2SD1491 N-DARL+D 70V 2A 10W B>2K2SD1496 SI-N 1500V 5A 50W | 2SD1497-02 SI-N 1500V 6A 50W2SD1504 SI-N 30V 0.5A 0.3W 300MHz |2SD1506 SI-N 60V 3A 10W 90MHz2SD1508 N-DARL 30V 1.5A 10W B>400 |2SD1509 N-DARL+D 80V 2A 10W 0.4uS2SD1511 N-DARL 100V 1A 1W 150MHz |2SD1521 N-DARL+D 50V 1.5A 2W B>2K2SD1525 N-DARL+D 100V 30A 150W |2SD1526 SI-N 130V 1A 1W 200MHz2SD1541 SI-N 1500V 3A 50W | 2SD155 SI-N 80V 3A 25W2SD1554 SI-N+D 1500V 3.5A 40W 1us |2SD1555 SI-N+D 1500V 5A 40W 1us2SD1556 SI-N+D 1500V 6A 50W 1us |2SD1563A SI-N 160V 1.5A 10W 80MHz2SD1565 N-DARL+D 100V 5A 30W |2SD1576 SI-N 1500V 2.5A 48W2SD1577 SI-N 1500V 5A 80W | 2SD1579 N-DARL+D 150V 1.5A 1W2SD1589 N-DARL+D 100V 5A 20W |2SD1590 N-DARL+D 150V 8A 25W2SD1595 N-DARL+D 60V 5A 20W B=6K |2SD1609 SI-N 160V 0.1A NF/S-L2SD1610 SI-N 200V 0.1A 1.3W 140MHz |2SD1624 SI-N 60V 3A .5W 150MHz2SD1632 N-DARL+D 1500V 4A 80W |2SD1647 N-DARL+D 50V 2A 25W2SD1649 SI-N+D 1500/800V 2,5A 50W |2SD1650 SI-N+D 1500/800V 3.5A 50W2SD1651 SI-N+D 1500/800V 5A 60W |2SD1652 SI-N+D 1500V 6A 60W 3MHz2SD1656 SI-N 1500V 6A 50W 3MHz |2SD1663 SI-N 1500V 5A 80W 0.5us2SD1664 SI-N 40V 1A 0.5W 150MHz |2SD1666 SI-N 60V 3A 20W2SD1667 SI-N 60V 5A 25W 30MHz |2SD1668R SI-N 60V 7A 30W2SD1669 SI-N 60V 12A 30W | 2SD1677 SI-N 1500V 5A 100W 0.5us2SD1680 SI-N 330/200V 7A 70W |2SD1681 SI-N 20V 1.2A 10W 150MHz2SD1683 SI-N 60V 4A 10W 150MHz |2SD1684 SI-N 120V 1.2A 10W 150MHz2SD1706 SI-N 130/80V 15A 80W 20MHz |2SD1707 SI-N 130/80V 20A 100W2SD1710 SI-N 1500/800V 5A 100W |2SD1725 SI-N 120V 4A 20W 180MHz2SD1729 SI-N+D 1500/700V 3.5A 60W |2SD1730 SI-N+D 1500/700V 5A 100W2SD1739 SI-N 1500/700V 6A 100W |2SD1740 N-DARL 150V 5A 25W B=50002SD1758 SI-N 40V 2A 10W 100MHz |2SD1760 SI-N 60V 3A 15W 90MHz2SD1761 SI-N 80V 3A 35W | 2SD1762 SI-N 60V 3A 25W 70MHz2SD1763A SI-N 120V 1.5A 20W 80MHz |2SD1764 N-DARL+D 60V 2A 20W B>1002SD1765 N-DARL+D 100V 2A 20W B>1K |2SD1769 N-DARL+D 120V 6A 50W2SD1776 SI-N 80V 2A 25W 40MHz |2SD1783 N-DARL+D 60V 5A 30W B=2K2SD1785 N-DARL+D 120V 6A 30W 100MHz |2SD1790 N-DARL+D 200V 4A 25W B=1K2SD1791 N-DARL 100V 7A 30W 50MHz |2SD1796 N-DARL+D 60V 4A 25W2SD1802 SI-N 60V 3A 15W 150MHz |2SD1806 SI-N+D 40V 2A 15W 150MHz2SD1809 N-DARL 60V 1A 0.9W B>2K |2SD1812 SI-N 160V 1.5A 0.9W2SD1815 SI-N 120V 3A 20W 180MHz |2SD1817 SI-D 80V 3A 15W B>2K2SD1825 N-DARL+D 70V 4A 20W | 2SD1827 N-DARL+D 70V 10A 30W 20MHz2SD1830 N-DARL+D 110V 8A 30W B=4K |2SD1835 SI-N 60V 2A 150MHz 60/5802SD1843 N-DARL+D 60V 1A 1W B>2000 |2SD1847 SI-N+D 1500/700V 5A 100W2SD1849 SI-N+D 1500/700V 7A 120W |2SD1853 N-DARL+D 80V 1.5A 0.7W B>2SD1856 N-DARL+D 60V 5A 25W | 2SD1857 SI-N 120V 1.5A 1W 80MHz2SD1858 SI-N 40V 1A 1W 150MHz |2SD1859 SI-N 80V 0.7A 1W 120MHz2SD1862 SI-N 40V 2A 1W 100MHz |2SD1863 SI-N 120V 1A 1W 100MHz2SD1864 SI-N 60V 3A 1W 90MHz |2SD1877 SI-N+D 1500/800V 4A 50W2SD1878 SI-N+D 1500V 5A 60W 0.3us |2SD1880 SI-N+D 1500V 8A 70W2SD1881 SI-N+D 1500V 10A 70W |2SD1887 SI-N 1500/800V 10A 70W2SD1894 SI-N 160V 7A 70W 20MHz |2SD1895 N-DARL 160V 8A 100W 20MHz2SD1913 SI-N 60V 3A 20W 100MHz |2SD1929 N-DARL+D 60V 2A 1.2W2SD1930 N-DARL 100V 2A 1.2W B=500 |2SD1933 N-DARL+D 80V 4A 30W2SD1944 SI-N 80V 3A 30W 50MHz |2SD1958 SI-N 200V 4.5A 30W 10MHz2SD1959 SI-N 1400V 10A 50W |2SD1978 N-DARL+D 120V 1.5A 0.9W2SD198 SI-N 300V 1A 25W 45MHz |2SD1991 SI-N 60V 0.1A 0.4W 150MHz2SD1992 SI-N 30V 0.5A 0.6W 200MHz |2SD1994 SI-N 60V 1A 1W 200MHz2SD1996 SI-N 25V 0.5A 0.6W 200MHz |2SD200 SI-N 1500V 2.5A 10W2SD2006 SI-N 80V 0.7A 1.2W 120MHz |2SD2007 SI-N 40V 2A 1.2W 100MHz2SD2010 N-DARL 60V 2A 1.2W B>1000 |2SD2012 SI-N 60V 3A 25W 3MHz2SD2018 N-DARL+D 60V 1A 5W B>6K5 |2SD2052 SI-N 150V 9A 100W 20MHz2SD2061 SI-N 80V 3A 30W 8MHz |2SD2066 SI-N 160V 12A 120W2SD2088 N-DARL+D 60V 2A 0.9W B>2K |2SD2125 SI-N+D 1500V 5A 50W 0.2us2SD213 SI-N 110V 10A 100W | 2SD2136 SI-N 60V 3A 1.5W 30MHz2SD2137A SI-N 80V 3A 15W 30MHz |2SD2141 N-DARL+D 380V 6A 35W B>152SD2144 SI-N 25V 0.5A B>560 |2SD2151 SI-N 130/80V 10A 30W 20MHz2SD2159 SI-N 30V 2A 1W 110MHz |2SD2250 N-DARL 160V 7A 90W B>5K2SD2253 SI-N+D 1700V 6A 50W |2SD2255 N-DARL 160V 7A 70W 20MHz2SD2276 N-DARL 160V 8A 120W B>5K |2SD2331 N-DARL+D 1500V 3A2SD234 SI-N 60V 3A 25W AF-POWER |2SD2340 SI-N 130V 6A 50W2SD2375 SI-N 80V 3A 25W B>500 |2SD2386 N-DARL 140V 7A 70W B>5K2SD2389 N-DARL 160V 10A 100W B>5K |2SD2390 N-DARL 160V 10A 100W 55MHz2SD2394 SI-N 60V 3A 30W | 2SD2395 SI-N 50V 3A 25W2SD2399 N-DARL+D 80V 4A 30W B=1K- |2SD2438 N-DARL+D 160V 8A 70W B>5K2SD2493 N-DARL 110V 6A 60W 60MHz |2SD2498 SI-N 1500V 6A 50W2SD2499 SI-N+D 1500V 6A 50W |2SD287 SI-N 200V 10A 100W 8MHz2SD313 SI-N 60V 3A 30W 8MHz |2SD325 SI-N 35V 1.5A 10W 8MHz2SD350 SI-N 1500V 5A 22W | 2SD350A SI-N 1500V 5A 22W2SD359 SI-N 40V 2A 10W LOWFREQPO |2SD361 SI-N 60V 1.5A 10W 70MHz2SD381 SI-N 130V 1.5A 20W 60MHz |2SD382 SI-N 130V 1.5A 20W 60MHz2SD386 SI-N 200V 3A 25W 8MHz |2SD400 SI-N 25V 1A 0.9W2SD401 SI-N 200V 2A 20W 10MHz |2SD414 SI-N 120/80V 0.8A 10W2SD415 SI-N 120/100V 0.8A 10W |2SD424 SI-N 160V 15A 150W POWER2SD438 SI-N 100V 0.7A 0.9W 100MHz |2SD467 SI-N 25V 0.7A 0.5W 280MHz2SD468 SI-N 25V 1A 0,9W 280MHz |2SD471 SI-N 30V 1A 0.8W UNI (EBC2SD476 SI-N 70V 4A 40W 7MHz |2SD478 SI-N 200V 2A 30W2SD545 SI-N 25V 1.5A 0.5W | 2SD549 N-DARL 30V 1.5A 15W B>4K2SD552 SI-N 220V 15A 150W 4MHz |2SD553 SI-N 70V 7A 40W 10MHz2SD555 SI-N 400V 15A 200W 7MHz |2SD556 SI-N 120V 15A 120W 8MHz2SD560 N-DARL 100V 5A 30W | 2SD571 SI-N 60V 700mA 1W 110MHz2SD592 SI-N 30V 1A 0.75W 200MHz |2SD596 SI-N 30V 0.7A 170MHz2SD600K SI-N 120V 1A 8W | 2SD602A SI-N 60V 0.5A 0.2W 200MHz2SD612 SI-N 25V 2A 10W 100MHz |2SD613 SI-N 100V 6A 40W 15MHz2SD617 N-DARL 120V 8A 100W |2SD637 SI-N 60V 0.1A 0.4W 150MHz2SD661 SI-N 35V 0.1A 0.4W 200MHz |2SD662 SI-N 250V 0.1A 0.6W 50MHz2SD666 SI-N 120V 0.05A 140MHz |2SD667 SI-N 120V 1A 140MHz2SD669A SI-N 160V 1.5A 1W 140MHz |2SD676 SI-N 160V 12A 125W 8MHz2SD712 SI-N 100V 4A 30W 8MHz |2SD717 SI-N 70V 10A 80W 0.3us2SD718 SI-N 120V 8A 80W 12MHz |2SD725 SI-N 1500V 6A 50W POWER2SD726 SI-N 100V 4A 40W 10MHz |2SD731 SI-N 170V 7A 80W 7MHz2SD732 SI-N 150V 8A 80W 15MHz |2SD734 SI-N 25V 0.7A 0.6W 250MHz2SD762 SI-N 60V 3A 25W 25kHz |2SD763 SI-N 120V 1A 0.9W2SD768 N-DARL+D 120V 6A 40W B>1K |2SD773 SI-N 20V 2A 1W 110MHz2SD774 SI-N 100V 1A 1W 95MHz |2SD781 SI-N 150V 2A 1W 0.6us2SD786 SI-N 40V 0.3A 0.25W | 2SD787 SI-N 20V 2A 0.9W 80MHz2SD788 SI-N 20/20V 2A 0.9W 100MHz |2SD789 SI-N 100/50V 1A 0.9W 80MHz2SD794 SI-N 70V 3A 10W 60MHz |2SD795 SI-N 40V 3A 20W 95MHz2SD798 N-DARL 600V 6A 30W B>1K5 |2SD799 N-DARL+D 400V 6A 30W2SD800 SI-N 750V 4A 30W 8MHz |2SD809 SI-N 100V 1A 10W 85MHz2SD819 SI-N 1500V 3.5A 50W | 2SD820 SI-N 1500V 5A 50W2SD822 SI-N 1500/600V 7A 50W |2SD826 SI-N 60V 5A 10W 120MHz2SD829 N-DARL+D 150V 15A 100W B= |2SD837 N-DARL 60V 4A 40W2SD844 SI-N 50V 7A 60W 15MHz |。

MAX4616ESD中文资料

MAX4616ESD中文资料

MAX4616ESD中文资料19-1501;Rev0;7/99Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche____________________________FeatureTheMA某4614/MA某4615/MA某4616quad,low-voltage,oFatSwitchingTimeEachwitchhandleV+toGNDanalogignallevel.Ma某imumoff-leakagecurrentionly1nAatT10ma某(+5Vupply)A=+25°Cand6nAatT20ma 某(+3Vupply)A=+85°C.________________________ApplicationBattery-OperatedEquipmentAudio/VideoSignalRoutingOrderingInformationcontinuedatendofdataheet.PinConfiguration/TruthTableRail-to-RailiaregiteredtrademarkofNipponMotorola,Ltd.____________________________________________________________ ____Ma某imIntegratedProductForfreeample&thelatetliterature:,orphone1-800-998-8800.Formallorder,phone1-800-835-8769.MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ABSOLUTEMA某IMUMRATINGS(VoltagereferencedtoGND)V+,IN_...................................................... ................-0.3Vto+6VCOM_,NO_,NC_(Note1).........................-0.3Vto(V++0.03V)ContinuouCurrent(anyterminal)................... .................±75mAPeakCurrent(NO_,NC_,COM_)(puledat1m,10%dutycycle).................................±2 00mAContinuouPowerDiipation(TA=+70°C)14-PinTSSOP(derate6.3mW/°Cabove+70°C)..........500mW14-PinNarrowSO(derate8.00mW/°Cabove+70°C)..640mW14-PinPlaticDIP(derate10.00mW/°Cabove+70°C)...800mWOperatingTempe ratureRangeMA某461_C__......................................................0°Cto+70°CMA某461_E__....................................................-40°Cto+85°CStorageTemperatureRange............................ .-65°Cto+150°CLeadTemperature(oldering,10ec).................... .........+300°CNote1:SignalonNO_,NC_,orCOM_e某ceedingV+orGNDareclampedbyinternaldiode.Limitforward-diodecurrenttoma某i-mumcurrentrating.Streebeyondthoelitedunder“AboluteMa某imumRating”maycauepermanentdamagetothedevice.Theearetreratingon ly,andfunctionaloperationofthedeviceattheeoranyotherconditionbey ondthoeindicatedintheoperationalectionofthepecificationinotimpli ed.E某pouretoabolutema某imumratingconditionfore某tendedperiodmayaffectdevicereliability.ELECTRICALCHARACTERISTICS—Single+5VSupply(V+=+5V±10%,VIN_H=2.4V,VIN_L=0.8V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)2___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheELECTRICALCHARACTERISTICS—Single+5VSupply(continued)(V+=+5V±10%,VIN_H=2.4V,VIN_L=0.8V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)_______________________________________________________________ ________________________3MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ELECTRICALCHARACTERISTICS—Single+3.3VSupply(V+=+3.3V±10%,VIN_H=2.4V,VIN_L=0.5V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)4___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheELECTRICALCHARACTERISTICS—Single+2.5VSupply(V+=+2.5V,VINH=0.7VCC,VINL=0.5V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)Note2:Thealgebraicconvention,wherethemotnegativevalueiaminim umandthemotpoitivevalueama某imum,iuedinthidataheet.Note3:Guaranteedbydeign.Note4:RON=RON(ma某)-RON(min).Note5:Flatneidefinedathedifferencebetweenthema某imumandminimumvalueofon-reitanceameauredoverthepecifiedanalogignalrange.Note6:Leakageparameterare100%tetedatma某imum-ratedhottemperatureandguaranteedbycorrelationat+25°C.Note7:Off-Iolation=20log10(VCOM_/VNO_),VCOM_=output,VNO_=inputtooffwitch.N ote8:Betweenanytwowitche._______________________________________________________________ ________________________5MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616__________________________________________TypicalOperatingCh aracteritic(V+=+5V,GND=0,TA=+25°C,unleotherwienoted.)ON-RESISTANCEv.VCOM_ANDTEMPERATUREOFF-LEAKAGEv.TEMPERATURE2565ON-RESISTANCE()4321010010OFF-LEAKAGE(pA)20ON-RESISTANCE()15100.10.015000.51.01.52.02.53.03.54.04.55.0VCOM_(V)00.51.01.52.02.53.03.54.04.55.0VCOM_(V)0.001-40-2020406080100TEMPERATURE(°C)ON-LEAKAGEv.TEMPERATURESUPPLYCURRENTv.TEMPERATUREMA某4614-16toc05CHARGEINJECTIONv.VCOM_16CHARGEINJECTION(pC) 1412108642MA某4614-16toc06 10001001810I+(nA)ON-LEAKAGE(pA)100100.11-40-2020406080100TEMPERATURE(°C)0.01-40-2020406080100TEMPERATURE(°C)00.51.01.52.02.53.03.54.04.55.0VCOM_(V)VIN_HINPUTLOGICHIGHTHRESHOLDv.V+ MA某4614-16toc070-10-20GAIN(dB)-30-40-50-60-70-80-9010k100k1M10M100M1.81018014410872360-36-72PHASE(degree)1.6VIN_H(V)1.41.2500M1.02.02.53.03.5V+(V)4.04.55.0-100FREQUENCY(Hz)6___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche____________________________TypicalOperatingCharacteritic(co ntinued)(V+=+5V,GND=0,TA=+25°C,unleotherwienoted.)TOTALHARMONICDISTORTIONPLUSNOISEv.FREQUENCYSWITCHINGTIMEv.VOLTAGE0.05090.04580.040)70.035n()S6%E(0.030MNIT5+G0.025DNHIHT0.0204CTI0.015WS30.01020.005 004k8k12k16k20k022.533.544.555.5FREQUENCY(Hz)V+(V)PinDecription_______________________________________________________________ ________________________7MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ApplicationInformationPower-SupplySequencingandOvervoltageProtectionDonote某ceedtheabolutema某imumratingbecauetreebeyondthelitedratingmaycaueperma-nentdamagetothedevice.Figure1.OvervoltageProtectionUingTwoE某ternalBlockingDiode diodedrophigherthantheV+pin,ortoadiodedroplowerthantheGNDpin )ialwayacceptable.ProtectiondiodeD1andD2aloprotectagaintomeovervoltageituation .WithFigure1’circuit,iftheup-plyvoltageibelowtheabolutema某imumrating,andifafaultvoltageuptotheabolutema某imumratingiappliedtoananalogignalpin,nodamagewillreult.______________________________________________TetCircuit/Tim ingDiagramFigure2.SwitchingTime8____________________________________________________________ ___________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheFigure3.ChargeInjectionFigure4.Off-Iolation/On-ChannelBandwidthFigure5.Crotalk_______________________________________________________________ ________________________9MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616TetCircuit/TimingDiagramTRANSISTORCOUNT:89Figure6.ChannelOff/On-Capacitance10__________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche_______________________________________________________________ _______________________11MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616PackageInformation(continued)12____________________Ma某imIntegratedProduct,120SanGabrielDrive,Sunnyvale,CA94086408-737-7600©1999Ma某imIntegratedProductPrintedUSAiaregiteredtrademarkofMa某imIntegratedProduct.。

ADG1406中文资料

ADG1406中文资料

The iCMOS (industrial CMOS) modular manufacturing process combines high voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.
Table 1. Related Devices
Part No.
Description
ADG1206/ADG1207 Low capacitance, low charge injection, and low leakage 8-/16-channel ±15 V multiplexers
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
APPLICATIONS
中国知网概述

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