QST2TR;中文规格书,Datasheet资料
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Transistors
Rev.B 1/2
General purpose amplification (−12V, −3A)
QST2
z Application
Low frequency amplifier Driver
z Features
1) Collector current is large.
2) Collector saturation voltage is low. V CE(sat) −250mV at I C = −3A / I B = −60mA z External dimensions (Unit : mm)
z Absolute maximum ratings (T a=25°C)
Parameter
Symbol V CBO V CEO V EBO I C I CP
P C
Tj Tstg Limits −15−12−6−6500150
−55 to +150
−10∗1Unit V V V A A mW °C °C
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation
Junction temperature
Range of storage temperature ∗21.25W ∗3∗1 Single pulse, Pw =1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm ×25mm ×
0.8mm Ceramic substrate t
z Equivalent circuit
z Electrical characteristics (T a=25°C)
Parameter
Symbol Min.Typ.Max.Unit Conditions
V CB = −10V, I E =0A, f =1MHz
Transition frequency
f T −250−MHz V CE = −2V, I E =500mA, f =100MHz BV CBO −15−−V I C = −10µA Collector-emitter breakdown voltage BV CEO −12−−V I C = −1mA Collector-base breakdown voltage BV EBO −6−−V I E = −10µA Emitter-base breakdown voltage I CBO −−−100nA V CB = −15V Collector cutoff current I EBO −−−100nA V EB = −6V
Emitter cutoff current
V CE(sat)−−120−250mV I C = −3A, I B = −60mA
Collector-emitter saturation voltage h FE 270−680−V CE = −2V, I C = −500mA
DC current gain
Cob
−80−pF
Corrector output capacitance ∗∗Pulsed
Transistors
Rev.B 2/2
z
Packaging specifications
z Electrical characteristic curves
COLLECTOR CURRENT : I C (A)
Fig.1 DC current gain vs. collector current
D C C U R R
E N T G A I N : h
F E
COLLECTOR CURRENT : I C (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage vs. collector current
B A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )
C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E
(s a t ) (V )
COLLECTOR CURRENT : I C (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )
EMITTER TO BASE VOLTAGE : V EB (V)COLLECTOR TO BASE VOLTAGE : V CB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F
)C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )
BASE TO EMITTER CURRENT : V BE (V)Fig.4 Grounded emitter propagation
characteristics C O L L E C T O R C U R R E N T : I C (A )
EMITTER CURRENT : I E (A)
Fig.5 Gain bandwidth product
vs. emitter current
T R A N S I T I O N F R E Q U E N C Y : f T (M H z )
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
分销商库存信息: ROHM
QST2TR。
