BFP520F中文资料
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NPN Silicon RF Transistor
Preliminary data Array For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G ms = 23 dB
Noise Figure F = 0.95 dB
For oscillators up to 15 GHz
Transition frequency f T = 45 GHz
Gold metallization for high reliability
SIEGET 45 - Line
45 GHz f T - Line
ESD: E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package BFP520F APs 1 = B 2 = E 3 = C 4 = E TSFP-4 Maximum Ratings
Parameter Symbol Value Unit Collector-emitter voltage V CEO 2.5V Collector-base voltage V CBO10
Emitter-base voltage V EBO1
Collector current I C40mA Base current I B4
P tot100mW Total power dissipation
T S 107°C
Junction temperature T j150°C Ambient temperature T A-65 (150)
Storage temperature T stg-65 (150)
Thermal Resistance
Junction - soldering point1)R thJS 430K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min.typ.max.
DC characteristics
V(BR)CEO 2.53 3.5V Collector-emitter breakdown voltage
I C = 1 mA, I B = 0
Collector-base cutoff current
I CBO--200nA V CB = 5 V, I E = 0
I EBO--35µA Emitter-base cutoff current
V EB = 1 V, I C = 0
DC current gain
h FE70110200-
I C = 20 mA, V CE = 2 V
AC characteristics (verified by random sampling)
f T-45-GHz Transition frequency
I C = 30 mA, V CE = 2 V, f = 2 GHz
C cb-0.07-pF Collector-base capacitance
V CB = 2 V, f = 1 MHz
C ce-0.25-Collector-emitter capacitance
V CE = 2 V, f = 1 MHz
Emitter-base capacitance
C eb-0.31-
V EB = 0.5 V, f = 1 MHz
Noise figure
F-0.95-dB I C = 2 mA, V CE = 2 V, Z S = Z Sopt ,
f = 1.8 GHz
G ms-23-
Power gain, maximum stable 1)
I C = 20 mA, V CE = 2 V, Z S = Z Sopt, Z L = Z Lopt ,
f = 1.8 GHz
|S21|2-20.5-dB Insertion power gain
I C = 20 mA, V CE = 2 V, f = 1.8 GHz,
Z S = Z L = 50
IP3-23.5-dBm Third order intercept point at output2)
V CE = 2 V, f = 1.8 GHz, Z S=Z L=50 ,
I C = 20 mA
P-1dB-10.5-
1dB compression point3)
V CE = 2 V, f = 1.8 GHz, Z S=Z L=50 ,
I C = 20 mA
1G ms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1MHz to 6GHz.
3DC current at no input power
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS =15aA VAF =25V NE =2-VAR =2V NC =2-RBM =7.5 CJE =235fF TF = 1.7ps ITF =0.7mA VJC =0.661V TR =50ns MJS =0.333-XTI =0.035-BF =235-IKF =0.4A BR = 1.5-IKR =0.01A RB =11 RE =0.6
VJE =0.958V XTF =10-PTF =50deg MJC =0.236-CJS =0fF XTB =-0.25
-
FC =0.5-
NF =1-
ISE =25fA
NR =1-
ISC =20fA
IRB =-A
RC =7.6
MJE =0.335-
VTF =5V
CJC =93fF
XCJC =1-
VJS =0.75V
EG = 1.11eV
TNOM298K
BO = 0.22nH
EO = 0.28nH
CO = 0.22nH
BO-EO =0.10-
BO-CO =0.01-
EO-CO =0.11-
BE = 34fF
BC =2fF
CE = 33fF
L BI = 0.42nH
R LBI =0.15
L EI = 0.26nH
R LEI =0.11
L CI = 0.35nH
R LCI =0.13
K CI-EI =-0.05-
K BI-CI =-0.08-
K BI-EI =0.20-
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
R LxI are series resistors for the inductances L xI and K xa-yb are the coupling coefficients between
the inductances L xa and L yb. The referencepins for the coupled ports are B, E, C, B`, E`, C`.
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
/silicondiscretes。
