APTGT100SK60T中文资料

053-4206 R e v B 7-2006PRODUCT BENEFITS• Low Losses• Low Noise Switching• Cooler Operation • Higher Reliability Systems • Increased System Power DensityPRODUCT FEATURES• Ultrafast Recovery Times • Soft Recovery Characteristics• Popular TO-247 Package orSurface Mount D 3PAK Package• Low Forward Voltage • Low Leakage Current • Avalanche Energy RatedPRODUCT APPLICATIONS• Anti-Parallel Diode -Switchmode Power Supply -Inverters• Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC600V 60AAPT60DQ60B APT60DQ60SAPT60DQ60BG* APT60DQ60SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.MAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise specified.STATIC ELECTRICAL CHARACTERISTICSSymbolV FI RM C TUNITVoltsµApFMINTYPMAX2.0 2.42.44 1.7 25 50075Characteristic / Test ConditionsForward VoltageMaximum Reverse Leakage Current Junction Capacitance, V R = 200VI F = 60AI F = 120AI F = 60A, T J = 125°CV R = 600VV R = 600V, T J = 125°CCharacteristic / Test Conditions Maximum D.C. Reverse VoltageMaximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse VoltageMaximum Average Forward Current (T C = 110°C, Duty Cycle = 0.5)RMS Forward Current (Square wave, 50% duty)Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms)Avalanche Energy (1A, 40mH)Operating and StorageTemperature Range Lead Temperature for 10 Sec.Symbol V R V RRM V RWM I F(AV)I F(RMS)I FSM E AVL T J ,T STGT LUNITVoltsAmpsmJ°CAPT60DQ60B_S(G)600609460020-55 to 175300Microsemi Website - /APT60DQ60B_S(G)DYNAMIC CHARACTERISTICS053-4206 R e v B 7-2006Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (seconds)FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATIONFIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODELMINTYPMAX-26 - 35 - 45 - 4 -- 175 - 680 - 8 - - 100 - 1380-26UNIT ns nCAmps ns nC Amps ns nC AmpsCharacteristicReverse Recovery Time Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery CurrentSymbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRMTest ConditionsI F = 60A, di F /dt = -200A/µs V R = 400V, T C = 25°C I F = 60A, di F /dt = -200A/µs V R = 400V, T C = 125°C I F = 60A, di F /dt = -1000A/µs V R = 400V, T C = 125°C I F = 1A, di F /dt = -100A/µs, V R = 30V, T J = 25°C THERMAL AND MECHANICAL CHARACTERISTICSCharacteristic / Test Conditions Junction-to-Case Thermal Resistance Package WeightMaximum Mounting TorqueSymbol R θJC W TTorque MINTYPMAX.440.22 5.9 101.1UNIT °C/W oz glb•in N•mMicrosemi reserves the right to change, without notice, the specifications and information contained herein.Dissipated Power(Watts)Z EXT are the external thermal impedances: Case to sink,sink to ambient, etc. Set to zero when modeling only the case to junction./053-4206 R e v B 7-2006110 100 20035030025020015010050C J , J U N C T I O N C A P A C I T A N C E K f ,D Y N A M I C P A R A ME T E R S(p F )(N o r m a l i z e d t o 1000A /µs )I F (A V ) (A )T J , JUNCTION TEMPERATURE (°C)Case Temperature (°C)Figure 6. Dynamic Parameters vs. Junction TemperatureFigure 7. Maximum Average Forward Current vs. CaseTemperatureV R , REVERSE VOLTAGE (V)Figure 8. Junction Capacitance vs. Reverse VoltageV F , ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/µs)Figure 2. Forward Current vs. Forward VoltageFigure 3. Reverse Recovery Time vs. Current Rate of Change -di F /dt, CURRENT RATE OF CHANGE (A/µs)-di F /dt, CURRENT RATE OF CHANGE (A/µs)Figure 4. Reverse Recovery Charge vs. Current Rate of ChangeFigure 5. Reverse Recovery Current vs. Current Rate of ChangeQ r r , R E V E R S E R E C O V E R Y C H A R G E I F , F O R W A R D C U R R E N T(n C )(A )I R R M , R E V E R S E R E C O V E R Y C U R R E N T t r r , R E V E R S E R E C O V E R Y T I M E(A )(n s )/APT60DQ60B_S(G)053-4206 R e v B 7-200651234di F /dt - Rate of Diode Current Change Through Zero Crossing.I F - Forward Conduction CurrentI RRM - Maximum Reverse Recovery Current.t rr - Reverse R ecovery Time, measured from zero crossing where Q rr - Area Under the Curve Defined by I RRM and t rr .line through I RRM and 0.25 I RRM passes through zero.Figure 9. Diode Test CircuitFigure 10, Diode Reverse Recovery Waveform and Definitions6di M /dt - Maximum Rate of Current Increase During the Trailing Portion of t rr.TO -247 Package OutlineD 3PAK Package OutlineDimensions in Millimeters (Inches)are PlatedDimensions in Millimeters and (Inches)e3e1SAC: Tin, Silver, Copper100% SnMicrosemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved./分销商库存信息: MICROSEMIAPT60DQ60BG。

Safety GuidelinesWarning notices must be observed to ensure personal safety as well as that of others, and to protect the product and the connected equipment. These warning notices are accompanied by a clarification of the level of caution to be observed.Qualified PersonnelThis device/system may only be set up and operated in conjunction with this manual. Qualified personnel are only authorized to install and operate this equipment in accordance with established safety practices and standards.Warning:This product can only function properly and safely if it is correctly transported, stored, installed, set up, operated, and maintained.Note: Always use product in accordance with specifications.This document is available in bound version and inelectronic version. We encourage users to purchase authorized bound manuals, or to viewelectronic versions as designed and authored bySiemens Milltronics Process Instruments Inc. Siemens Milltronics Process Instruments Inc. will not be responsible for the contents of partial or whole reproductions of either bound or electronic versions.While we have verified the contents ofthis manual for agreement with the instrumentation described, variationsremain possible. Thus we cannotguarantee full agreement. The contents of this manual are regularly reviewed and corrections are included in subsequent editions. We welcome all suggestions for improvement. Technical data subject to change.MILLTRONICS®is a registered trademark of Siemens Milltronics Process Instruments Inc. Contact SMPI Technical Publications at the following address:Technical PublicationsSiemens Milltronics Process Instruments Inc.1954 Technology Drive, P.O. Box 4225Peterborough, Ontario, Canada, K9J 7B1Email:************************Table of ContentsME100 Motion Probe: Introduction (2)Principle of operation (2)Specifications (3)Dimensions (4)Installation (5)Interconnection (6)Transient voltage protection (6)ME100 Positioning (7)ME100 Operational features (8)High/Low Alarm (HL) Model – Self Calibration (8)Zero Speed (ZS) Model (8)Applications (9)Bucket Elevators (9)Shafts (10)Belt Conveyors (10)Screw Conveyors (10)7ML19981EX01ME100 Motion Probe – INSTRUCTION MANUAL Page 1ME100 Motion Probe: Introduction Note: Please follow the installation and operating procedures to allow for themaximum accuracy and reliability of your ME100 Motion Probe.The ME100 Motion Probe is a safety device specifically designed to protect equipment that has rotating or reciprocating parts. The ME100 detects a changing magnetic field, typically caused by a ferromagnetic target disrupting the magnetic field of the probe1.The ME100 warns of an increase or decrease of motion by detecting alarm conditions.By detecting the disruption immediately, the ME100 protects equipment from damage or process failure.The ME100 is available in two models. The High/Low alarm version (HL) will detectwhether the speed of the monitored target is within a pre-set alarm band of the calibrated speed. The Zero Speed version (ZS) will alarm if the speed of the monitored target falls below 8 PPM (pulses per minute).Note: Before installing the ME100, ensure that the proposed location is free of anystrong 50/60Hz magnetic field caused by nearby power transformers, heater elements, or large industrial motors. These sources can affect the performance of the MotionProbe. (See note1 below).Principle of operationThe ME100 uses the principle of electromagnetic induction to detect the displacement ofa ferromagnetic object.The probe generates a magnetic field. When this magnetic field is disrupted by a moving ferromagnetic object, such as the bucket of a bucket elevator, the flight of a screwconveyor, or the keyway on a shaft, the coil of the probe generates voltage. This voltage is directly proportional to the strength of the field of the coil, the number of wire turns in the coil, and the speed of the ferromagnetic object. It is inversely proportional to the fourth power of the distance between the object and the coil.The voltage signal is conditioned to generate pulses for subsequent digital signalprocessing.1.Extremely strong magnetic fields (such as those produced by the 30A/mrequirements of IEC 61000-4-8 Power Frequency Magnetic Field Immunity Test)will be detected by the ME100. This will result in a loss of functionality whichmay cause the ME100 to falsely indicate alarm conditions by relay trip and/or achange in the color/state of the indicator LED.Page 2ME100 Motion Probe – INSTRUCTION MANUAL7ML19981EX01SpecificationsPower•24 Vdc (20–30 Vdc), 0.030 Adc maxOutput• 1 form C (S.P.D.T.) dry relay contact•Rated 1A at 50 VdcOperating RangeHigh/Low alarm (HL)•Standard: 2 to 480 PPM for rotating pulley, bucket elevators, drive sprockets•Optional: 0.5 to120 RPM for screw conveyor applications; 8 to1920 PPM (pulses perminute) for motor shaftsZero Speed (ZS)•8 to 1920 PPM, under-speed alarming below 8 PPMAlarm Band(HL version only)•Standard: ± 12% of calibrated 100% speed•Optional:± 3%, ± 6%, ± 25%, ± 50%Note: ± 50% offers under-speed alarming onlyProbe Sensitivity•Minimum distance 38 mm (1.5”) @ 0.6 m/min (2 ft/min) speed,with a target 50 mm (2") x 25 mm (1") and 25 mm (1") thickor•Minimum distance 76 mm (3”) @ 2.1 m/min (7 ft/min) speed,with a target 50 mm (2") x 25 mm (1") and 25 mm (1") thickOperating Temperature• –20 to +65o C (–4 to 149o F)• 5% to 95% Relative Humidity, No CondensationConstruction•Potted housing 316 stainless steel•Cable: 3m, 6 conductor, 22 AWG, shieldedIngress Protection•IP65Approvals•CE7ML19981EX01ME100 Motion Probe – INSTRUCTION MANUAL Page 3DimensionsME100 Motion Probe Dimensions (mm)Mounting Bracket Dimensions (mm)Page 4ME100 Motion Probe – INSTRUCTION MANUAL7ML19981EX01InstallationThe ME100 must be mounted in a non-hazardous area that is within the ambienttemperature range and is non-corrosive to the materials of construction (stainless steel enclosure and conduit).Note:•Use the bracket supplied to mount the ME100 onto a vibration-free structure.The gap between the probe and the target should be sufficient to prevent thetarget damaging the probe. If the target is enclosed by mild steel, a stainlesssteel “window” can be fabricated, to allow the sensor to read the target.•Use flexible conduit to connect the ME100, to make it easier to remove or adjust.7ML19981EX01ME100 Motion Probe – INSTRUCTION MANUAL Page 5Page 6ME100 Motion Probe – INSTRUCTION MANUAL 7ML19981EX01InterconnectionTransient voltage protectionThe input power supply lines of the ME100 are equipped with overvoltage protection circuitry. This circuitry protects the system from lightning, line transient and high voltage spikes, and provides a high degree of safety.Use a fuse to protect the relay contacts from excessive current flow.Cable Color Designation ColorFunction black- power supply negative red + power supply positivewhite relay commonblue relay normally open 1greenrelay normally closed 1orange shield/case ground 1.Relay energized: non-alarm stateME100 PositioningYou must be able to interrupt the 24 Vdc power supply to the ME100. If an ME100 N.O.relay contact is tied into the equipment control scheme, jumper the contact to allow the equipment to run.Locate the ME100 probe as shown in one of the application diagrams, and hand tighten the nuts and bolts which secure the clamping bracket. Ensure that any equipment guards are in place, then follow steps 1 to 6.1.Start up the equipment and run at desired speed2.Apply power to the ME100. The LED on the non-target end of the probe should pulsegreen, as each target passes by.3.If, instead of pulsing green, the LED illuminates red, shut down the equipment,interrupt power to the ME100 and re-position the probe target end closer to thetargets.4.Repeat step s 1, 2 and 3 until there is a green pulse for each target that passes by theprobe.The best position for the ME100 will be close enough to ensure high confidence inreading the targets, but far enough away to prevent the target, or any othertravelling components, from striking the ME100.5.Tighten the clamping bolts with wrenches to fully secure the ME1006.Remove power from the ME100, remove any contact jumpers and finalize wiring.The ME100 will now be ready to run when it is powered up again. We recommend that you apply power to the ME100 at the same time as, or after, you apply power to theequipment being monitored.Note:•The ME100 can be applied with the conduit nipple in any position, so long as the length of the probe is perpendicular to the targets.•Ensure the probe is mounted to a relatively vibration-free structure. High amplitude vibration may cause false pulses due the reaction of the probe to the Earth’smagnetic field.7ML19981EX01ME100 Motion Probe – INSTRUCTION MANUAL Page 7ME100 Operational featuresHigh/Low Alarm (HL) Model – Self Calibration Once the ME100–HL is powered, the alarm relay is energized, and the ME100 waits for the moving object to reach its nominal speed. There is a four-second delay, after which the first two pulses calibrate the system and the third verifies the calibration frequency.The ME100–HL is then armed and ready to detect and monitor motion variations.If the ME100–HL is unarmed and no motion is detected within a pre-set time limit (60 seconds divided by the minimum pulse rate of the model), or if the acknowledgement fails to confirm the speed, the alarm is activated and the relay de-energizes.Once armed, the ME100–HL continuously monitors the presence of incoming pulseswithin a pre-set tolerance, depending on the alarm band option. (±12% is standard.)The ME100–HL has two operating states indicated by a two color LED:•Normal: a green pulse on the LED indicates that the target has been detected,and that the pulse rate indicates proper operation•Alarm: a solid red LED indicates that the speed of the monitored target iswithin the alarm band of the calibrated speedThe alarm relay will re-energize if the speed of the monitored target returns to within the pre-set tolerance of the calibrated set point.Zero Speed (ZS) ModelOnce powered, the ME100–ZS energizes the alarm relay, which remains energized for a start up delay of 4 seconds, to allow the process to reach operating speed. If a pulse rate greater than 8 PPM is detected the relay remains energized, and the ME100–ZS is armed and ready to detect and monitor motion variations.The ME100–ZS has two operating states indicated by a two color LED:•Normal: a green pulse on the LED indicates that the target has been detected,and that the pulse rate indicates proper operation•Alarm: a solid red LED indicates that the pulse rate has dropped below the 8 PPM default setting, indicating loss of speedOnce the pulse rate exceeds the 8 PPM default setting, the alarm relay is re-energized, indicating proper operation.Page 8ME100 Motion Probe – INSTRUCTION MANUAL7ML19981EX01ApplicationsThe ME100 detects a target such as the bucket of a bucket elevator, the flight of a screw conveyor, or the keyway on a shaft. If the target is hard to distinguish, for example, a fine flight, or a shaft without a keyway, a ferrous mass can be added to provide a clear target. Bucket Elevators1.For Belt-Driven Elevators with ferrousbuckets spaced at intervals greater than76mm (3"), or non-ferrous buckets withferrous bolts, locate the ME100 on theback of the down leg.2.For ferrous buckets spaced at intervalsless than 76mm (3"), locate the ME100on the front of the down leg.3.For Chain and Sprocket Drive Elevators,locate the ME100 so that the gapbetween the bucket and the sensor enddoes not exceed 102mm (4"). To preventdamage to the ME100 from eccentricbucket motion, ensure that the gap is notless than 12.5mm (0.5") in the worstconditions.4.For elevators with ferrous walls, cut aME100(See detail A)Down LegPage 10ME100 Motion Probe – INSTRUCTION MANUAL 7ML19981EX01ShaftsA keyway or paddle blades may be used as a target when the shaft speed is sufficient for the blades or key to provide the number of pulses required at a minimum velocity of1.5m/minute (5ft/minute). In applications where exposed moving parts cannot be avoided, take precautions, and provide safety shields.Belt ConveyorsLocate the ME100 so that the gap from the sensor end to the target is a maximum of 102mm (4"). The optimum distance is 25 mm to 51mm (1" to 2"). The potential for damage in each application governs the minimum gap allowable.Screw ConveyorsIf the target is difficult to detect, (for instance if the flight is very fine), you can add a ferrous mass behind the flight of the screw conveyor where it passes the ME100, to improve detection in borderline conditions. This mass must be added for all non-ferrous screws.by the arrows.11 for details.)Non-Ferrous Window:For Screw Conveyors with a trough over 3.2 mm (0.13") thick152 mm (6") square openingThe dimensions shown for the base, window and bracket are the minimumrecommended, with tolerances of ±0.8 mm (0.031"). Use 305, 310, or 316 Stainless Steel, Brass, or Aluminum.The ME100 may not touch the window if temperatures are in excess of 65o C (150o F).7ML19981EX01ME100 Motion Probe – INSTRUCTION MANUAL Page 11NOTESPage 12ME100 Motion Probe – INSTRUCTION MANUAL7ML19981EX01。

050-7621 R e v A 10-2005MAXIMUM RATINGSAll Ratings: TC = 25°C unless otherwise specified.STATIC ELECTRICAL CHARACTERISTICSCharacteristic / Test ConditionsCollector-Emitter Breakdown Voltage (V GE = 0V, I C = 4mA)Gate Threshold Voltage (V CE = V GE , I C = 1mA, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V, I C = 100A, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V, I C = 100A, T j = 125°C)Collector Cut-off Current (V CE = 600V, V GE = 0V, T j = 25°C) 2Collector Cut-off Current (V CE = 600V, V GE = 0V, T j = 125°C) 2Gate-Emitter Leakage Current (V GE = ±20V)Intergrated Gate ResistorSymbol V (BR)CES V GE(TH)V CE(ON)I CES I GES R G(int)UnitsVoltsµAnA ΩSymbol V CES V GE I C1I C2I CM SSOA P D T J ,T STGT LAPT100GN60B2(G)600±30229135300300A @ 600V625-55 to 175300UNIT VoltsAmpsWatts °CParameterCollector-Emitter Voltage Gate-Emitter VoltageContinuous Collector Current 8 @ T C = 25°C Continuous Collector Current 8 @ T C = 110°C Pulsed Collector Current 1Switching Safe Operating Area @ T J = 175°C Total Power DissipationOperating and Storage Junction Temperature RangeMax. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.APT Website - CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultralow V CE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.• 600V Field Stop• Trench Gate: Low V CE(on) • Easy Paralleling• 6µs Short Circuit Capability•Intergrated Gate Resistor: Low EMI, High ReliabilityApplications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMIN TYP MAX 6005.0 5.86.5 1.05 1.45 1.851.87 25 TBD 6002050-7621 R e v A 10-2005APT100GN60B2(G)1 Repetitive Rating: Pulse width limited by maximum junction temperature.2 For Combi devices, I ces includes both IGBT and FRED leakages3 See MIL-STD-750 Method 3471.4 E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchingloss. (See Figures 21, 22.)6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)7 R G is external gate resistance, not including R G(int) nor gate driver impedance. (MIC4452)8 Continuous current limited by package pin temperature to 100A.APT Reserves the right to change, without notice, the specifications and information contained herein.THERMAL AND MECHANICAL CHARACTERISTICSUNIT °C/W gmMIN TYP MAX.21 N/A5.9CharacteristicJunction to Case (IGBT)Junction to Case (DIODE)Package WeightSymbol R θJC R θJC W TDYNAMIC CHARACTERISTICSSymbol C ies C oes C res V GEP Q g Q ge Q gc SSOA SCSOA t d(on)t rt d(off)t f E on1E on2E off t d(on)t r t d(off)t f E on1E on2E off Test Conditions Capacitance V GE = 0V, V CE = 25Vf = 1 MHz Gate Charge V GE = 15VV CE = 300V I C = 100A T J = 175°C, R G = 4.3Ω 7, V GE =15V, L = 100µH,V CE = 600V V CC = 600V, V GE = 15V, T J = 125°C, R G = 4.3Ω 7Inductive Switching (25°C)V CC = 400V V GE = 15V I C = 100AR G= 1.0Ω 7T J = +25°CInductive Switching (125°C)V CC = 400V V GE = 15V I C = 100A R G= 1.0Ω 7T J = +125°CCharacteristic Input Capacitance Output CapacitanceReverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter ChargeGate-Collector ("Miller") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall TimeTurn-on Switching Energy 4Turn-on Switching Energy (Diode) 5Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall TimeTurn-on Switching Energy 4 4Turn-on Switching Energy (Diode) 55Turn-off Switching Energy 66MIN TYPMAX6000 560 200 9.5 600 45340 300631 65 310 55 4750 5095267531 65 350 85 5000 62553300UNIT pF V nCAµsnsµJns µJ050-7621 R e v A 10-2005TYPICAL PERFORMANCE CURVESV G S (T H ), T H R E S H O L D V O L T A G EV C E , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )I C , C O L L E C T O R C U R R E N T (A )(N O R M A L I Z E D )I C , D C C O L L E C T O R C U R R E N T (A ) V C E , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V ) V G E , G A T E -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )1.151.101.051.000.950.900.850.800.750.70-50 -25 0 25 50 75 100 125 150V CE , COLLECTER-TO-EMITTER VOLTAGE (V)V CE , COLLECTER-TO-EMITTER VOLTAGE (V)FIGURE 1, Output Characteristics(T J = 25°C)FIGURE 2, Output Characteristics (T J = 125°C)V GE , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)FIGURE 3, Transfer CharacteristicsFIGURE 4, Gate ChargeV GE , GATE-TO-EMITTER VOLTAGE (V)T J , Junction Temperature (°C)FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature T J , JUNCTION TEMPERATURE (°C)T C , CASE TEMPERATURE (°C)FIGURE 7, Threshold Voltage vs. Junction TemperatureFIGURE 8, DC Collector Current vs Case Temperature050-7621 R e v A 10-2005S W I T C H I N G E N E R G Y L O S S E S (m J ) E O N 2, T U R N O N E N E R G Y L O S S (m J )t r , R I S E T I M E (n s )t d (O N ), T U R N -O ND E L A Y T I M E (n s )S W I T C H I N G E N E R G Y L O S SE S (m J ) E OF F , T U R N O F F E N E RG YL O S S (m J )t f , F A L L T I M E (n s )t d (O F F ), T U R N -O F F D E L A Y T I M E (n s )I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector CurrentFIGURE 10, Turn-Off Delay Time vs Collector CurrentI CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector CurrentFIGURE 12, Current Fall Time vs Collector CurrentI CE , COLLECTOR TO EMITTER CURRENT (A)I CE , COLLECTOR TO EMITTER CURRENT (A)FIGURE 13, Turn-On Energy Loss vs Collector CurrentFIGURE 14, Turn Off Energy Loss vs Collector CurrentR G , GATE RESISTANCE (OHMS)T J , JUNCTION TEMPERATURE (°C)FIGURE 15, Switching Energy Losses vs. Gate ResistanceFIGURE 16, Switching Energy Losses vs Junction Temperature40353025201510502502001501005025201510545403530252015105050040030020010014012010080604020876543210252015105050-7621 R e v A 10-2005APT100GN60B2(G)35030025020015010050C , C A P A C I T A N C E (PF )I C , C O L L E C T O R C U R R E N T (A )V CE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V CE , COLLECTOR TO EMITTER VOLTAGEFigure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area0 100 200 300 400 500 600 700Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (SECONDS)Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse DurationFIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODELF M A X , O P E R A T I NG F R E Q U E N C Y (kH z )I C , COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current0.007080.244RC MODELJunction temp. (°Case temperature. (°050-7621 R e v A 10-2005APT100GN60B2(G)VDimensions in Millimeters and (Inches)e1SAC: Tin, Silver, CopperT-MAX ® (B2) Package OutlineFigure 22, Turn-on Switching Waveforms and DefinitionsFigure 23, Turn-off Switching Waveforms and DefinitionsT J = 125°CCollector CurrentCollector VoltageGate VoltageSwitching Energy5%10%t d(on)90%10%t r5%T J = 125°CCollector Voltage Collector CurrentGate VoltageSwitching Energy90%t d(off)10%t f90%。

UTS1000B/T系列频谱分析仪用户手册REV12023.10尊敬的用户：您好！感谢您选购全新的优利德仪器，为了正确使用本仪器，请您在本仪器使用之前仔细阅读本使用手册全文，特别有关“安全注意事项”的部分。

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UNI-T是优利德科技（中国）股份有限公司[UNI-TREND TECHNOLOGY(CHINA)CO.，LTD]的注册商标。

如果原购买者自购买该产品之日起一年内，将该产品出售或转让给第三方，则保修期应为自原购买者从UNI-T或授权的UNI-T分销商购买该产品之日起一年内，附件和保险丝等不受此保证的保护。

如果在适用的保修期内证明产品有缺陷，UNI-T可自行决定是修复有缺陷的产品且不收部件和人工费用，或用同等产品（由UNI-T决定）更换有缺陷的产品，UNI-T作保修用途的部件、模块和更换产品可能是全新的，或者经修理具有相当于新产品的性能，所有更换的部件、模块和产品将成为UNI-T的财产。

以下提到的“客户”是指据声明本保证所规定权利的个人或实体。

为获得本保证承诺的服务，“客户”必须在适用的保修期内向UNI-T通报缺陷，并为服务的履行做适当安排，客户应负责将有缺陷的产品装箱并运送到UNI-T指定的维修中心，同时预付运费并提供原购买者的购买证明副本，如果产品要运送到UNI-T维修中心所在国范围内的地点，UNI-T应支付向客户送返产品的费用，如果产品送返到任何其他地点，客户应负责支付所有的运费、关税、税金及任何其他费用。