APTGT75A120TG中文资料

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Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C R G = 4.7Ω
元器件交易网
APTGT75A120TG
Phase leg Fast Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 NTC2
VCES = 1200V IC = 75A @ Tc = 80°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 1200 100 75 175 ±20 350 150A@1150V Unit V A V W
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
125 IC (A) 100 75 50 25 0 0 400 800 V CE (V) 1200 1600
6
7
8
9
10
11
12
100
125
150
VGE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32
Er VCE = 600V VGE =15V IC = 75A T J = 125°C Eon
V °C N.m g
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on
Min
Typ
Max 0.35 0.58 150 125 125 4.7 160
Unit
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 2.5
Min 1200
Typ
Max 250 500
Unit V µA A
di/dt =2000A/µs
mJ

2-5
APTGT75A120TG – Rev 1
July, 2006
IF = 75A VR = 600V
75 1.6 1.6 170 280 7 14 3 5.5
2.1
V ns µC
元器件交易网
APTGT75A120TG
Temperature sensor NTC (see application note APT0406 on for more information).
Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K

3-5
APTGT75A120TG – Rev 1
July, 2006
元器件交易网
APTGT75A120TG
Typical Performance Curve
150 125
IC (A) Output Characteristics (VGE =15V) Output Characteristics 150 T J = 125°C
July, 2006 1-5 APTGT75A120TG – Rev 1
E1 OUT Q2 G2
E2
0/VBU S
NTC1
G2 E2
OUT
VBUS
0/VBUS
OUT
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Min
Typ 5340 280 240 260 30 420 70 285 50 520 90 7
Max
Unit pF
ns
tings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy

元器件交易网
APTGT75A120TG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 250 2.1 6.5 400 Unit µA V V nA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
T J=25°C TJ=125°C
Energy losses vs Collector Current 15 12.5 E (mJ) 10 7.5 5 2.5 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150
Eoff Er VCE = 600V VGE = 15V RG = 4.7Ω T J = 125°C Eoff Eon