IRFP250中文资料

1/8Sep 2000IRFP250

N-CHANNEL 200V - 0.073Ω - 33A TO-247

PowerMesh™II MOSFET

s

TYPICAL R

DS(on) = 0.073Ω

sEXTREMELY HIGH dv/dt CAPABILITY

s100% AVALANCHE TESTED

sNEW HIGH VOLTAGE BENCHMARK

sGATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the firstgeneration of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

sHIGH CURRENT, HIGH SPEED SWITCHING

sUNINTERRUPTIBLE POWER SUPPLIES (UPS)

sDC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating areaTYPEV

DSSR

DS(on)I

D

IRFP250200V< 0.085Ω33 A

SymbolParameterValueUnit

V

DSDrain-source Voltage (V

GS = 0)200V

V

DGRDrain-gate Voltage (R

GS = 20 kΩ)200V

V

GSGate- source Voltage±20V

I

DDrain Current (continuos) at T

C = 25°C33A

I

DDrain Current (continuos) at T

C = 100°C20A

I

DM (q)Drain Current (pulsed)132A

P

TOTTotal Dissipation at T

C = 25°C

180W

Derating Factor1.44W/°C

dv/dt(1)Peak Diode Recovery voltage slope5V/ns

T

stgStorage Temperature–65 to 150°C

T

jMax. Operating Junction Temperature150°C

(1)I

SD ≤33A, di/dt ≤300A/µs, V

DD ≤ V

(BR)DSS, T

j ≤ T

JMAX.TO-247123

INTERNAL SCHEMATIC DIAGRAM元器件交易网www.cecb2b.comIRFP250

2/8THERMAL DATAAVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFFON (1)DYNAMICRthj-caseThermal Resistance Junction-case Max0.66°C/W

Rthj-ambThermal Resistance Junction-ambient Max30°C/W

Rthc-sinkThermal Resistance Case-sink Typ0.1°C/W

T

lMaximum Lead Temperature For Soldering Purpose300°C

SymbolParameterMax ValueUnit

I

ARAvalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T

j max)33A

E

ASSingle Pulse Avalanche Energy

(starting T

j = 25 °C, I

D = I

AR, V

DD = 50 V)600mJ

SymbolParameterTest ConditionsMin.Typ.Max.Unit

V

(BR)DSSDrain-source

Breakdown VoltageI

D = 250 µA, V

GS = 0200V

I

DSSZero Gate Voltage

Drain Current (V

GS = 0)V

DS = Max Rating1µA

V

DS = Max Rating, T

C = 125 °C50µA

I

GSSGate-body Leakage

Current (V

DS = 0)V

GS = ±30V±100nA

SymbolParameterTest ConditionsMin.Typ.Max.Unit

V

GS(th)Gate Threshold VoltageV

DS = V

GS, I

D = 250 µA234V

R

DS(on)Static Drain-source On

ResistanceV

GS = 10V, I

D = 16A0.0730.085Ω

I

D(on)On State Drain CurrentV

DS > I

D(on) x R

DS(on)max,

V

GS=10V33A

SymbolParameterTest ConditionsMin.Typ.Max.Unit

g

fs Forward TransconductanceV

DS > I

D(on) x R

DS(on)max,

I

D= 16A1025S

C

issInput CapacitanceV

DS = 25V, f = 1 MHz, V

GS = 02850pF

C

ossOutput Capacitance420pF

C

rssReverse Transfer

Capacitance120pF元器件交易网www.cecb2b.com

3/8IRFP250

Safe Operating Area Thermal ImpedanceELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note:1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

SymbolParameterTest ConditionsMin.Typ.Max.Unit

t

d(on)Turn-on Delay Time VDD = 100V, I

D =16 A

R

G=4.7Ω, V

GS = 10V

(see test circuit, Figure 3)25ns

t

rRise Time50ns

Q

gTotal Gate ChargeV

DD = 160V, I

D = 33 A,

V

GS = 10V, R

G=4.7Ω117158nC

Q

gsGate-Source Charge15nC

Q

gdGate-Drain Charge50nC

SymbolParameterTest ConditionsMin.Typ.Max.Unit

t

r(Voff)Off-voltage Rise TimeV

DD = 160V, I

D = 16 A,

R

G=4.7Ω, V

GS = 10V

(see test circuit, Figure 5)60ns

t

fFall Time40ns

t

cCross-over Time100ns

SymbolParameterTest ConditionsMin.Typ.Max.Unit

I

SDSource-drain Current33A

I

SDM (2)Source-drain Current (pulsed)132A

V

SD (1)Forward On VoltageI

SD = 33 A, V

GS = 01.6V

t

rrReverse Recovery TimeI

SD = 33 A, di/dt = 100A/µs,

V

DD = 100V, T

j = 150°C

(see test circuit, Figure 5)370ns

Q

rrReverse Recovery Charge5.4µC

I

RRMReverse Recovery Current29A元器件交易网www.cecb2b.com