光刻胶MSDS-东进

光刻胶知识简介光刻胶知识简介:一.光刻胶的定义（photoresist）又称光致抗蚀剂，由感光树脂、增感剂（见光谱增感染料）和溶剂三种主要成分组成的对光敏感的混合液体。

感光树脂经光照后，在曝光区能很快地发生光固化反应，使得这种材料的物理性能，特别是溶解性、亲合性等发生明显变化。

经适当的溶剂处理，溶去可溶性部分，得到所需图像（见图光致抗蚀剂成像制版过程）。

二.光刻胶的分类光刻胶的技术复杂，品种较多。

根据其化学反应机理和显影原理，可分负性胶和正性胶两类。

光照后形成不可溶物质的是负性胶；反之，对某些溶剂是不可溶的，经光照后变成可溶物质的即为正性胶。

利用这种性能，将光刻胶作涂层，就能在硅片表面刻蚀所需的电路图形。

基于感光树脂的化学结构，光刻胶可以分为三种类型。

①光聚合型采用烯类单体，在光作用下生成自由基，自由基再进一步引发单体聚合，最后生成聚合物，具有形成正像的特点。

②光分解型采用含有叠氮醌类化合物的材料，经光照后,会发生光分解反应,由油溶性变为水溶性，可以制成正性胶.③光交联型采用聚乙烯醇月桂酸酯等作为光敏材料,在光的作用下,其分子中的双键被打开，并使链及链之间发生交联，形成一种不溶性的网状结构，而起到抗蚀作用，这是一种典型的负性光刻胶。

柯达公司的产品KPR胶即属此类。

三.光刻胶的化学性质a、传统光刻胶：正胶和负胶。

光刻胶的组成：树脂(resin/polymer),光刻胶中不同材料的粘合剂，给及光刻胶的机械及化学性质(如粘附性、胶膜厚度、热稳定性等)；感光剂，感光剂对光能发生光化学反应；溶剂(Solvent)，保持光刻胶的液体状态，使之具有良好的流动性；添加剂(Additive)，用以改变光刻胶的某些特性，如改善光刻胶发生反射而添加染色剂等。

负性光刻胶。

树脂是聚异戊二烯，一种天然的橡胶；溶剂是二甲苯；感光剂是一种经过曝光后释放出氮气的光敏剂，产生的自由基在橡胶分子间形成交联。

从而变得不溶于显影液。

负性光刻胶在曝光区由溶剂引起泡涨；曝光时光刻胶容易及氮气反应而抑制交联。

光刻胶知识简介光刻胶知识简介:一.光刻胶的定义(photoresist)又称光致抗蚀剂，由感光树脂、增感剂（见光谱增感染料）和溶剂三种主要成分组成的对光敏感的混合液体。

感光树脂经光照后，在曝光区能很快地发生光固化反应，使得这种材料的物理性能，特别是溶解性、亲合性等发生明显变化。

经适当的溶剂处理，溶去可溶性部分，得到所需图像（见图光致抗蚀剂成像制版过程）。

二.光刻胶的分类光刻胶的技术复杂，品种较多。

根据其化学反应机理和显影原理，可分负性胶和正性胶两类。

光照后形成不可溶物质的是负性胶；反之，对某些溶剂是不可溶的，经光照后变成可溶物质的即为正性胶。

利用这种性能，将光刻胶作涂层，就能在硅片表面刻蚀所需的电路图形。

基于感光树脂的化学结构，光刻胶可以分为三种类型。

①光聚合型采用烯类单体，在光作用下生成自由基，自由基再进一步引发单体聚合，最后生成聚合物，具有形成正像的特点。

②光分解型采用含有叠氮醌类化合物的材料，经光照后,会发生光分解反应,由油溶性变为水溶性，可以制成正性胶.③光交联型采用聚乙烯醇月桂酸酯等作为光敏材料,在光的作用下,其分子中的双键被打开，并使链与链之间发生交联，形成一种不溶性的网状结构，而起到抗蚀作用，这是一种典型的负性光刻胶。

柯达公司的产品KPR胶即属此类。

三.光刻胶的化学性质a、传统光刻胶：正胶和负胶。

光刻胶的组成：树脂（resin/polymer），光刻胶中不同材料的粘合剂，给与光刻胶的机械与化学性质（如粘附性、胶膜厚度、热稳定性等）；感光剂，感光剂对光能发生光化学反应；溶剂（Solvent），保持光刻胶的液体状态，使之具有良好的流动性；添加剂（Additive），用以改变光刻胶的某些特性，如改善光刻胶发生反射而添加染色剂等。

负性光刻胶。

树脂是聚异戊二烯，一种天然的橡胶；溶剂是二甲苯；感光剂是一种经过曝光后释放出氮气的光敏剂，产生的自由基在橡胶分子间形成交联。

从而变得不溶于显影液。

负性光刻胶在曝光区由溶剂引起泡涨；曝光时光刻胶容易与氮气反应而抑制交联。

1.CHEMICAL PRODUCT AND COMPANY IDENTIFICATIONProduct Code41200Trade Name MICROPOSIT S1805PHOTO RESISTManufacturer/Supplier Shipley CompanyAddress455Forest St.Marlborough,Massachusetts01752Phone Number(508)481-7950Emergency Phone Number(508)481-7950Chemtrec#(800)424-9300MSDS first issued2July1996MSDS data revised11June1998Prepared By:Amy C.NicholsLocal Sales Company Shipley Company,455Forest Street,Marlboro,MA01752(508-481-7950)POSITION/INFORMATION ON THE INGREDIENTSComponents in ProductComponent Name CAS#/Codes ConcentrationDiazo Photoactive Compound 1.00-10.00Fluoroaliphatic Polymer Esters0.01-1.00Mixed cresol novolak resin10.00-20.00Electronic grade propylene glycol monomethyl108-65-681.00-86.00ether acetatecresol1319-77-30.01-0.993.HAZARD IDENTIFICATIONMain Hazards-Irritant-Combustible-Nervous System-Skin-Eye-Kidney-LiverRoutes of Entry Inhalation,ingestion,eye and skin contact,absorption.Carcinogenic Status Not considered carcinogenic by NTP,IARC and OSHATarget Organs-Nervous System-Skin-Eye-Liver-KidneyHealth Effects-Eyes Liquid or vapor may cause pain,transient irritation and superficialcorneal effects.Health Effects-Skin Material may cause slight irritation on prolonged or repeated contact.Repeated and/or prolonged contact may lead to:-drowsiness-liverdamage-kidney damageHealth Effects-Ingestion A large dose may have the following effects:-drowsiness-liver damage-kidney damageHealth Effects-Inhalation Exposure to vapor at high concentrations may have the followingeffects:-irritation of nose,throat and respiratory tract-liver damage-kidneydamage4.FIRST AID MEASURESFirst Aid-Eyes Immediately flush the eye with plenty of water for at least15minutes,holding the eye open.Obtain medical attention if sorenessor redness persists.First Aid-Skin Wash skin with water.Obtain medical attention if blistering occurs orredness persists.First Aid-Ingestion Wash out mouth with water.Obtain medical attention.First Aid-Inhalation Remove from exposure.If there is difficulty in breathing,giveoxygen.Seek medical attention if symptoms persist.Advice to Physicians Treat symptomatically.5.FIRE FIGHTING MEASURESExtinguishing Media Use water spray,foam,dry chemical or carbon dioxide.Keepcontainers and surroundings cool with water spray.Special Fire-Fighting Procedures This product may give rise to hazardous vapors in a fire.Vapors cantravel a considerable distance to a source of ignition and result inflashback.Unusual Fire&Explosion Hazards Pressure may build up in closed containers with possible liberation of combustible vapors.Protective Equipment for Fire-FightingWear full protective clothing and self-contained breathing apparatus.6.ACCIDENTAL RELEASE MEASURESSpill Procedures Contain and absorb using earth,sand or other inert material.Transfer into suitable containers for recovery or disposal.Finallyflush area with plenty of water.Personal Precautions Wear appropriate protective clothing.Wear respiratory protection.Eliminate all sources of ignition.Environmental Precautions Prevent the material from entering drains or water courses.7.HANDLING AND STORAGEHandling Use local exhaust ventilation.Avoid contact with eyes,skin andclothing.Keep container tightly closed when not in use.Storage Store in original containers.Store away from sources of heat orignition.Storage area should be:-cool-dry-well ventilated-out of direct sunlightOtherProprietary photoresist film contains approximately2-4%of2,3,4-trihydroxybenzophenone(THBP),which may sublime during soft-bake or hard-bake processing.THBP has low acute toxicity(LD50>5g/kg).Contact with eyes,skin or mucous membranes cause irritation.To prevent accumulation of THBP on equipment surfaces and ventilation ducts,preventative maintenance program including regular cleaning should be implemented.Wipe surfaces using an appropriate cleaning solvent when possible.Provide adequate general or local exhaust ventilation during the cleaning process.In situations where this is not possible or where solvent or dust concentrations become excessive,use an air purifying respirator with an organic vapor/toxic particulate cartridge.When cleaning residual THBP,wear protective gloves and adequate protective clothing to prevent skin contact.Practice good personal hygiene to prevent accidental exposure.Clean all protective clothing and equipment thoroughly after each use.8.EXPOSURE CONTROLS/PERSONAL PROTECTIONOccupational Exposure StandardsElectronic grade propylene glycol monomethyl ether acetate Manufacturer recommends30ppm8h TWA and90ppm15min STEL.cresol ACGIH:TLV5ppm(22mg/m3)8h TWA.OSHA:PEL5ppm(22mg/m3)8h EH40:OES5ppm(22mg/m3)8h TWA.Canbe absorbed through skin.Engineering Control Measures Engineering methods to prevent or control exposure are preferred.Methods include process or personnel enclosure,mechanicalventilation(local exhaust),and control of process conditions.Respiratory Protection Respiratory protection if there is a risk of exposure to high vaporconcentrations.The specific respirator selected must be based onthe airborne concentration found in the workplace and must notexceed the working limits of the respirator.Hand Protection Butyl rubber gloves.Eye Protection Chemical goggles.Body Protection Normal work wear.9.PHYSICAL AND CHEMICAL PROPERTIESPhysical State Viscous liquidColor RedOdor SweetVOC(g/l)839.80Specific Gravity 1.010pH NeutralBoiling Range/Point(°C/F)145.8/295Flash Point(PMCC)(°C/F)40.5-46.1/105-115Explosion Limits(%)Lower limit1.5at20°C.Upper limit7.0at20C..Solubility in Water Insoluble.Vapor Density(Air=1)Heavier than air.Evaporation Rate Slower than etherVapor Pressure Propylene Glycol Monomethyl Ether Acetate:3.7mmHg at20°C. 10.STABILITY AND REACTIVITYStability Stable under normal conditions.Conditions to Avoid-High temperatures-Static dischargeIncompatibilities-Oxidizing agentsHazardous Polymerization Will not occur.Hazardous DecompositionProductsCombustion will generate:-carbon monoxide-Carbon Dioxide-phenols-toxic fluorinecompounds-aldehydes-oxides of nitrogen-acrid smoke andirritating fumes11.TOXICOLOGICAL INFORMATIONAcute Data Propylene Glycol Monomethyl Ether Acetate:Oral LD50(rat)8532mg/kg.Dermal LD50(rabbit)5000mg/kg.Chronic/Subchronic Data No data.Genotoxicity It was not mutagenic when tested in bacterial or mammaliansystems.Reproductive/Developmental Developmental effects were seen in laboratory animals only at doseToxicity levels that were maternally toxic.Additional Data None known.12.ECOLOGICAL INFORMATIONMobility Propylene Glycol Monomethyl Ether Acetate:Koc is0-50.Persistence/Degradability The product is partially or slowly biodegradable.BOD20greater than40%Bio-accumulation No data.Ecotoxicity The product is rated as practically non-toxic to aquatic species.Tests on the following species gave a LC50of161mg/litre:-fatheadminnowsTests on the following species gave a LC50of408mg/litre:-daphnia 13.DISPOSAL CONSIDERATIONSProduct Disposal Incineration is the recommended method of disposal.Dispose of inaccordance with all applicable local and national regulations.Container Disposal Labels should not be removed from containers until they have beencleaned.Empty containers may contain hazardous residues.Dispose of containers with care.14.TRANSPORT INFORMATIONDOT Ground:Not Regulated per49CFR173.150(f)(2)UN Proper Shipping Name Flammable liquid,n.o.s.UN Class(3)Flammable LiquidUN Number UN1993UN Packaging Group IIIN.O.S.1:Propylene Glycol Monomethyl Ether AcetateN.O.S.2:Subsidiary Risks None.ADR/RID SubstanceIdentification NumberCLASS3-31(c)CERCLA RQ Cresol(100#)Marine Pollutant No.15.REGULATORY INFORMATIONTSCA Listed YesTSCA ExemptionsWHMIS Classification D.2.B B.3MA Right To Know Law All components have been checked for inclusion on theMassachusetts Substance List(MSL).Those components present atthe de minimus concentration have been identified in the hazardousingredients section of the MSDS.California Proposition65This product does not contain materials which the State of Californiahas found to cause cancer,birth defects or other reproductive harm.SARA TITLE III-Section311/312Categorization(40CFR370)Immediate,delayed,flammability hazardSARA TITLE III-Section313(40 CFR372)This product does not contain a chemical which is listed in Section 313at or above de minimis concentrations.16.OTHER INFORMATIONNFPA Rating-FIRE2NFPA Rating-HEALTH2NFPA Rating-REACTIVITY0NFPA Rating-SPECIAL None.Revisions Highlighted Flash Point(PMCC)(°C/F)Abbreviations CAS#:Chemical Abstract Services NumberACGIH:American Conference of Governmental Industrial HygienistsOSHA:Occupational Safety and Health AdministrationTLV:Threshold Limit ValuePEL:Permissible Exposure LimitSTEL:Short Term Exposure LimitNTP:National Toxicology ProgramIARC:International Agency for Research on CancerR:RiskS:SafetyLD50:Lethal Dose50%LC50:Lethal Concentration50%BOD:Biological Oxygen DemandKoc:Soil Organic Carbon Partition Coefficient.TLm:Median Tolerance LimitDisclaimerThe data contained herein is based on information that Shipley Company believes to be reliable,but no expressed or implied warranty is made with regard to the accuracy of such data or its suitability for a given situation.Such data relates only to the specific product described and not to such products in combination with any other product and no agent of Shipley Company is authorized to vary any of such data.Shipley Company and its agents disclaim all liability for any action taken or foregone on reliance upon such data.。

光刻胶知识⼤全光刻胶知识⼤全光刻胶（Photo Resist）光刻胶的定义及主要作⽤光刻胶是⼀种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发⽣变化。

⼀般光刻胶以液态涂覆在硅⽚表⾯上，曝光后烘烤成固态。

光刻胶的作⽤：a、将掩膜板上的图形转移到硅⽚表⾯的氧化层中；b、在后续⼯序中，保护下⾯的材料（刻蚀或离⼦注⼊）。

光刻胶起源光刻开始于⼀种称作光刻胶的感光性液体的应⽤。

图形能被映射到光刻胶上，然后⽤⼀个developer就能做出需要的模板图案。

光刻胶溶液通常被旋转式滴⼊wafer。

如图wafer被装到⼀个每分钟能转⼏千转的转盘上。

⼏滴光刻胶溶液就被滴到旋转中的wafer 的中⼼，离⼼⼒把溶液甩到表⾯的所有地⽅。

光刻胶溶液黏着在wafer上形成⼀层均匀的薄膜。

多余的溶液从旋转中的wafer上被甩掉。

薄膜在⼏秒钟之内就缩到它最终的厚度，溶剂很快就蒸发掉了，wafer上就留下了⼀薄层光刻胶。

最后通过烘焙去掉最后剩下的溶剂并使光刻胶变硬以便后续处理。

镀过膜的wafer对特定波成的光线很敏感，特别是紫外（UV）线。

相对来说他们仍旧对其他波长的，包括红，橙和黄光不太敏感。

所以⼤多数光刻车间有特殊的黄光系统。

光刻胶的主要技术参数a、分辨率（resolution）。

区别硅⽚表⾯相邻图形特征的能⼒。

⼀般⽤关键尺⼨（CD，Critical Dimension）来衡量分辨率。

形成的关键尺⼨越⼩，光刻胶的分辨率越好。

b、对⽐度（Contrast）。

指光刻胶从曝光区到⾮曝光区过渡的陡度。

对⽐度越好，形成图形的侧壁越陡峭，分辨率越好。

c、敏感度（Sensitivity）。

光刻胶上产⽣⼀个良好的图形所需⼀定波长光的最⼩能量值（或最⼩曝光量）。

单位：毫焦/平⽅厘⽶或mJ/cm2。

光刻胶的敏感性对于波长更短的深紫外光（DUV）、极深紫外光（EUV）等尤为重要。

d、粘滞性/黏度（Viscosity）。

衡量光刻胶流动特性的参数。

粘滞性随着光刻胶中的溶剂的减少⽽增加；⾼的粘滞性会产⽣厚的光刻胶；越⼩的粘滞性，就有越均匀的光刻胶厚度。

Technical datasheetAPPLICATIONGeneral purpose positive tone photoresists featuring a special PAC (Photo Active Compound) engineered to prevent poisoning of plating solutions and extend plating bath life. Excellent substrate adhesion for wet etch applications.•Wide compatibility with electro -plating solu-tions•Safe solvent•Single coat thicknesses from 1.0 to >20µm •May be cured as a permanent dielectric in-* Contact your AZ product representative for more in-formation and special spin programs for ultra thick films.COMPANION PRODUCTSThinning/Edge Bead RemovalAZ ®EBR Solvent or AZ® EBR 70/30 DevelopersAZ ® 400K 1:3 or 1:4, AZ ® 421K, AZ Developer 1:1, AZ 340 RemoversAZ ® 300T, AZ ® 400T, AZ Kwik StripAZ® P4000 SeriesPositive Tone PhotoresistsTYPICAL PROCESSSoft Bake: 90-115C*Rehydrate: for films > 4.0µm thick Expose: 350-450nm sensitive Develop: Spray or immersionDeveloper type: Inorganic (IN) * Use higher soft bake temp. for best adhesion to metals. Ramped temperature may be required for thicker films.OPTICAL CONSTANTS*96µm gold bump plated in AZ P4620 Cyanide electro -plating solutionTYPICAL SPIN CURVES (150MM SUBSTRATE)Note: Thicker films will be coated by varying spin times and other dispense parameters (or via multiple coats). Single films above 7.0µm are not spun to equilibrium.TYPICAL AU PLATING RESULTS (CYANIDE PLATING SOLUTION; PH = 5.5)Resist: AZ P4620Thickness: 24µmDevelop: AZ 400K 1:3Plating Temp: 45CPlating Time: 50 min.Metal Thickness: 20µmStrip: AZ 400TREFERENCE PROCESS (12µM THICK AZ P4620 FILM)* Thicker films may require a ramped soft bake process to avoid bubble formation due to rapid outgassing ofsolvents. Contact your AZ product representative for ultra-thick coat and bake processing guidelines.EXPOSURE LATITUDE FOR 20µM LINES AZ P4620 AT FT = 12µM EXPOSURE LATITUDE FOR 40µM LINES AZ P4620 AT FT = 24µMABSORBANCE SPECTRA OF P4000 SERIES PHOTORESISTS (UNBLEACHED, NORMAL-IZED TO 1µM)PROCESSING P4000 AS A DIELECTRIC INSULATORAZ P4000 Series photoresists may be thermally cured after develop to form stable dielectric isolators. The die-lectric properties are cure temperature dependent as shown in the table below.EXAMPLE COATING SEQUENCE FOR 20+ µM THICK FILMSAZ P4000 SERIES FLUID VISCOSITIESDILL MODELLING PARAMETERSAPPROXIMATE EXPOSURE DOSE REQUIRE-MENT VS. FILM THICKNESS (SUSS MA -200)PROCESS CONSIDERATIONSSUBSTRATE PREPARATIONSubstrates must be clean, dry, and free of organic residues. Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ P4000. Contact your AZ product representative for detailed information on pre-treating with HMDS.COATINGFilms up to 8.0µm thick (depending upon wafer size) may be set and spun to equilibrium using the spin curve graphs as a reference. Thicker films require special coat programs using carefully timed spread and spin cycles. Contact your AZ products representative for additional information.SOFT BAKESoft bake times and temperatures may be application specific. Process optimization is recommended to ensure stable lithographic and adhesion performance. Soft bake temperatures for AZ P4000 should be in the 95-115C range. Temperatures towards the high end of this range will improve adhesion to most metals. Thick films may require gradual ramping of the soft bake temperature to prevent bubbling.FILM REHYDRATIONP4000 photoresist films thicker than 4.0µm require a rehydration hold between soft bake and exposure. Hold times are typically 30-60 minutes (depending upon film thickness) @ relative humidity 40 - 45%.EXPOSUREAZ P4000 is sensitive to exposure wavelengths between 310 and 450nm. 365-436nm is recommended.POST EXPOSE BAKEA PEB is not generally required for P4000 but may be employed to maximize process latitudes and to mitigate standing wave effects caused by monochromatic exposure. PEB temperatures and times may be application specific. As a general rule, PEB temperatures should be in the 100 to 115C range.DEVELOPINGSpray or immersion developing in AZ 400K series developers is recommended. AZ 400K 1:3 or AZ 421K (unbuffered) are recommended for resist film thicknesses above 12µm. AZ 400K 1:4 provides improved devel-oper selectivity for thinner films. AZ Developer 1:1 may be used in applications requiring zero etch rate on Alu-minum substrates.HARD BAKEHard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch processes. Hard bake temperatures should be in the 100 to 110C range to ensure minimal thermal distortion of the pattern. Higher temperatures may be used to cure the pattern (cross link the resin) for use as a permanent insulator.COMPATIBLE MATERIALSAZ P4000 Series materials are compatible with all commercially available lithography processing equipment. Compatible materials of construction include glass, quartz, PTFE, PFA, stainless steel, HDPE, polypropylene, and ceramic.Rev. (08/21)Products are warranted to meet the specifications set forth on their label/packaging and/or certificate of analysis at the time of shipment or for the expressly stated duration. MERCK MAKES NO REPRESENTATION OR WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, INCLUDING MERCHANTABILITY OR FITNESS FOR A PARTICULAR USE REGARDING OUR PRODUCTS OR ANY INFORMATION PROVIDED IN CONNECTION THEREWITH. Customer is responsible for and must independently determine suitability of Merck´s products for customer ’s products, intended use and processes, including the non -infringement of any third parties´ intellectual property rights. Merck shall not in any event be liable for incidental, consequential, indirect, exemplary or special damages of any kind resulting from any use or failure of the products: All sales are subject to Merck ’s complete Terms and Conditions of Sale. Prices are subject to change without notice. Merck reserves the right to discontinue products without prior notice.The information on our trademarks is available in the Trademarks section on . Detailed information on our trademarks is also available via publicly accessible resources. All other trademarks are the property of their respective owners. © 2021 Merck KGaA, Darmstadt, Germany and/or its affiliates.DisclaimerHANDLING/DISPOSALAZ P4000 Series materials are flammable liquids containing PGMEA (1-Methoxy -2-propanol acetate). Refer to the current version of the MSDS and to local regulations for up to date information on safe handling and proper disposal. AZ P4000 is compatible with drain lines handling similar organic solvent based materials.。

此之前约1950年发明了重氮萘醌—酚醛树脂系光刻胶,它最早应用于印刷业,目前是电子工业用用最多的光刻胶,近年随着电子工业的飞速发展,光刻胶的发展更是日新月异,新型光刻胶产品不断涌现。

光刻胶按其所用曝光光源或辐射源的不同, 又可分为紫外光刻胶、深紫外光刻胶、电子束胶、离子束胶、X射线胶等。

2. 光刻技术及工艺电子工业的发展离不开光刻胶的发展, 这是由电子工业微细加工的线宽所决定的。

众所周知,在光刻工艺中离不开曝光。

目前采用掩膜版的曝光方式主要有接触式曝光和投影式曝光两种。

光刻工艺过程光刻胶的种类虽然很多,使用主艺条件依光刻胶的品种不同而有很大的不同,但大体可遵从如下步骤：a.基片处理：该工序包括脱脂清洗、高温处理等部分,有时还需涂粘附增强剂进行表面改性处理。

脱脂一般采用溶剂或碱性脱脂剂进行清洗,然后再用酸性清洗剂清洗,最后用纯水清洗。

高温处理通常是在150-160℃对基片进行烘烤去除表面水分。

粘附增强剂的作用是将基片表面亲水性改变为憎水性, 便于光刻胶的涂布, 增加光刻胶在基片上的粘附性电。

b.涂胶：光刻胶的涂布方式有旋转涂布、辗涂、浸胶及喷涂等多种方式。

在电子工业中应用较多的是旋转涂布。

该方式的涂胶厚度一般取决于光刻胶的粘度及涂胶时的转速。

膜厚-转速曲线是光刻胶的一个重要特性。

c.前烘：前烘的目的是为了去除胶膜中残存的溶剂,消除胶膜的机械应力。

在电子工业中烘烤方式通常有对流烘箱和热板两种。

前烘的温度和时间根据光刻胶种类及胶膜的厚度而定。

以北京化学试剂研究所BN308系列紫外负性光刻胶为例,当胶膜厚度为1-2μm时,对流烘箱，70-80℃，20min；热板，100℃，1min。

d.曝光：正确的曝光量是影响成像质量的关键因素。

曝光不够或曝光过度均会影响复制图形的再现性。

曝光宽容度大有利于光刻胶的应用。

光刻胶的曝光量同样取决于光刻胶的种类及膜厚。

以BN308系列负胶为例,当膜厚为1-2μm时,曝光20-30mJ/cm2e.中烘：曝光后显影前的烘烤,对于化学增幅型光刻胶来说至关重要,中烘条件的好坏直接关系到复制图形的质量。