highpower_multi-junction_155g1s2j0xx-1
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High Power Multi-Junction 1550 nm Pulsed Laser Diodes, 155G1S2J0XX-Series PACKAGE DRAWINGS
Package U
5.6 mm CD
Package U: Pin Out: 1. LD Anode (+), 2. NC, 3. LD Cathode (-) Case, Inductance 5.0 nH
1 55 G
Diode Configuration 1S = single stack 2S = double stack
2J
Contact Stripe Width 02 = 2 mil 04 = 4 mil * 06 = 6 mil * 14 = 14 mil * Package Style R = 9 mm CD * S = TO-18 U = 5.6 mm CD Y = ceramic *
6
60
4
40
2
20
பைடு நூலகம்
0 0 5 10 15 20 25 -60 -40 -20 0 Peak forward current (A)
0 20 Temperature (C) 40 60 80 100
High Power Multi-Junction 1550 nm Pulsed Laser Diodes, 155G1S2J0XX-Series
relative Intensity (a.u.)
150
0,6
100
0,4
50
0,2
0 -80 -60 -40 -20 0 Angle (deg) 20 40 60 80
0 0 0,5 1 1,5 2 2,5 f - number 3 3,5 4 4,5 5
PRODUCT NUMBER DESIGNATION
Typ 1550 20 0.50 12 32
Max 1580
Units nm nm nm/°C Degrees Degrees
High Power Multi-Junction 1550 nm Pulsed Laser Diodes, 155G1S2J0XX-Series
High Power Multi-Junction 1550 nm Pulsed Laser Diodes 155G1S2J0XX-Series
FEATURES Single devices up to 5 Watts Proven InGaAsP high reliability structure 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package 32 degree beam divergence Small emitting area
8
1580
7
1570 Peak wavelength (nm)
6
1560 Peak power(W) 20 Temperature (C) 40 60 80 100
5
1550
4
1540
3
1530
2
1520
1
1510 -60 -40 -20 0
0 0 5 10 15 20 25 Forward current (A)
Figure 3: Static Forward Voltage vs. Peak Current
12
Figure 4: Relative Optical Power vs. Temperature
140
10
120
100 8 Relative peak power Forard voltage (V) 80
Figure 5: Far field emission parallel and perpendicular to junction plane
Figure 6: Relative intensity vs relative aperture size (f/#)
1,2
250
1
200
0,8 Relative intensity
ABSOLUTE MAXIMUM RATINGS Maximum ratings Peak reverse voltage Pulse duration Single element Duty factor Temperature Storage Operating Lead soldering 5 seconds max at Limiting values 2V 200 ns 0.1 % - 55 °C to + 100 °C - 45 °C to + 85 °C 200 °C
Min Wavelength of peak radiant intensity Spectral bandwidth at 50 % intensity points Wavelength temperature coefficient Beam spread (50 % peak intensity) Parallel to junction Perpendicular to junction plane 1520
APPLICATIONS Eye safe range finding Surveying equipment “Friend or Foe” identification Laser radar Security barrier
GENERIC CHARACTERISTICS AT tRT = 21 °C
High Power Multi-Junction 1550 nm Pulsed Laser Diodes, 155G1S2J0XX-Series
Figure 1: Wavelength vs. temperature
1590
Figure 2: Optical Output Power vs. Forward Current
Package R
9 mm CD
Package R: Pin Out:
1. LD Anode (+), 2. NC, 3. LD Cathode (-) Case, Inductance 6.8 nH
High Power Multi-Junction 1550 nm Pulsed Laser Diodes, 155G1S2J0XX-Series
Package S
TO-18
Package S: Pin Out: 1. LD Anode (+), 2. LD Cathode (-) Case, Inductance 5.2 nH
Package Y
ceramic carrier
Package Y: Pin Out: 1. LD Anode (+), 2. LD Cathode (-), Inductance 1.6 nH
*Notes on reliability and overdrive These products have proven MTTF beyond 1000 hours when operated continuously at iF and 0.1% duty cycle. Although the devices may be substantially overdriven it is important to respect maximum drive currents, iFM and maximum average power output. Longevity under all overdrive conditions has not been verified, but should be acceptable for applications such as rangefinding where the on-time of the devices is limited. The devices must be adequately heat sunk, particularly in applications where the units are operated continuously. High temperature operation will reduce performance and MTTF.
SINGLE CHIPS Single chip characteristics at tRT = 21°C, tW = 150 ns, Duty Factor (DF) = 0.1 % Parameter PO at iF, (typ.) Emitting area Peak forward current iF iFM (max)* Average power output (max)* Ith (typical) VF at iF 155G1S2J02X 5W 50 x 7 μm 10 A 20 A 5 mW 0.4 A 10 V
