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SM6T68A中文资料

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1/5SM6T6V8A/220A

SM6T6V8CA/220CA

TRANSILTM®

sPEAKPULSEPOWER:600W(10/1000µs)

sBREAKDOWNVOLTAGERANGE:From6.8Vto220V.

sUNIANDBIDIRECTIONALTYPES

sLOWCLAMPINGFACTOR

sFASTRESPONSETIME

sULRECOGNIZEDFEATURES

SMB

(JEDECD0-214AA)

SymbolParameterValueUnit

PPPPeakpulsepowerdissipation(seenote1)Tjinitial=Tamb600W

PPowerdissipationoninfiniteheatsinkTamb=50°C5W

IFSMNonrepetitivesurgepeakforward

currentforunidirectionaltypestp=10ms

Tjinitial=Tamb100A

TstgTjStoragetemperaturerange

Maximumjunctiontemperature-65to+175

150°C

°C

TLMaximumleadtemperatureforsolderingduring10s.260°C

Note1:Forasurgegreaterthanthemaximumvalues,thediodewillfailinshort-circuit.ABSOLUTEMAXIMUMRATINGS(Tamb=25°C)DESCRIPTION

Transildiodesprovidehighovervoltageprotection

byclampingaction.Theirinstantaneousresponse

totransientovervoltagesmakesthemparticu-

larlysuitedtoprotectvoltagesensitivedevices

suchasMOSTechnologyandlowvoltagesup-

pliedIC’s.

August2001-Ed:5ASymbolParameterValueUnit

Rth(j-l)Junctiontoleads20°C/W

Rth(j-a)Junctiontoambientonprintedcircuitonrecommendedpad

layout100°C/WTHERMALRESISTANCES元器件交易网www.cecb2b.comSM6Txx

2/5IIF

VFVCLVBR

VRM

IPPIRMVSymbolParameter

VRMStand-offvoltage

VBRBreakdownvoltage

VCLClampingvoltage

IRMLeakagecurrent@VRM

IPPPeakpulsecurrent

αTVoltagetemperaturecoefficient

VFForwardvoltagedropELECTRICALCHARACTERISTICS(Tamb=25°C)TypesIRM@VRMVBR@IRVCL@IPPVCL@IPPαTC

maxminnommaxmaxmaxmaxtyp

note210/1000µs8/20µsnote3note4

UnidirectionalMar-kingBidirectionalMar-kingµAVVVVmAVAVA10-4/°CpF

SM6T6V8ADESM6T6V8CALE10005.86.456.87.141010.55713.42985.74000

SM6T7V5ADGSM6T7V5CALG5006.47.137.57.881011.35314.52766.13700

SM6T10ADPSM6T10CALP108.559.51010.5114.54118.62157.32800

SM6T12ADTSM6T12CALT510.211.41212.6116.73621.71847.82300

SM6T15ADXSM6T15CALX112.814.31515.8121.22827.21478.41900

SM6T18AEESM6T18CAME115.317.11818.9125.22432.51238.81600

SM6T22AEKSM6T22CAMK118.820.92223.1130.62039.31029.21350

SM6T24AEMSM6T24CAMM120.522.82425.2133.21842.8939.41250

SM6T27AEPSM6T27CAMP123.125.72728.4137.51648.3839.61150

SM6T30AERSM6T30CAMR125.628.53031.5141.514.553.5759.71075

SM6T33AETSM6T33CAMT128.231.43334.7145.713.159.0689.81000

SM6T36AEVSM6T36CAMV130.834.23637.8149.91264.3629.9950

SM6T39AEXSM6T39CAMX133.337.13941.0153.911.169.75710.0900

SM6T68AFQSM6T68CANQ158.164.66871.41926.51213310.4625

SM6T75AFSSM6T75CANS164.171.3-78.811035.81343010.5575

SM6T100AFYSM6T100CANY185.595.010010511374.417822.510.6500

SM6T150AGLSM6T150CAOL112814315015812072.92651510.8400

SM6T200AGUSM6T200CAOU117119020021012742.235311.310.8350

SM6T220AGWSM6T220CAOW11882092202311328238810.310.8330

Note2:Pulsetest:tp<50ms.

Note3:∆VBR=αT*(Tamb-25)*VBR(25°C).

Note4:VR=0V,F=1MHz.Forbidirectionaltypes,

capacitancevalueisdividedby2.Fig.1:Peakpulsepowerdissipationversusinitial

junctiontemperature(printedcircuitboard).10s

1000s%IPP

50

0tPULSEWAVEFORM10/1000s100元器件交易网www.cecb2b.comSM6Txx

3/5Fig.2:Peakpulsepowerversusexponentialpulseduration.

Fig.3:Clampingvoltageversuspeakpulsecurrent.

Exponentialwaveformtp=20µs________

tp=1ms——————-

tp=10ms...............

Note:Thecurvesofthefigure3arespecifiedforajunctiontemperatureof25°Cbeforesurge.

Thegivenresultsmaybeextrapolatedforotherjunctiontemperaturesbyusingthefollowingformula:

∆VBR=αT*[Tamb-25]*VBR(25°C)

Forintermediatevoltages,extrapolatethegivenresults.元器件交易网www.cecb2b.comSM6Txx

4/5Fig.6:Transientthermalimpedancejunc-

tion-ambientversuspulseduration.

MountingonFR4PCBoardwithRecommended

padlayout.Fig.5:Peakforwardvoltagedropversuspeak

forwardcurrent(typicalvaluesforunidirectional

types).Fig.4b:Capacitanceversusreverseapplied

voltageforbidirectionaltypes(typicalvalues).Fig.4a:Capacitanceversusreverseapplied

voltageforunidirectionaltypes(typicalvalues).

Fig.7:Relativevariationofleakagecurrent

versusjunctiontemperature.元器件交易网www.cecb2b.comSM6Txx

5/5Packaging:standardpackagingistapeandreel.

SOD15=StandardpackagingisinFilm.PACKAGEMECHANICALDATA

SMB(Plastic)

D

EE1cA1

A2bLSM 6T 100 C A

SURFACE MOUNT

600WBIDIRECTIONALNo suffix:Unidirectional

BREAKDOWNVOLTAGEORDERCODE

MARKING:Logo,DateCode,TypeCode,CathodeBand(forunidirectionaltypesonly).

REF.DIMENSIONS

MillimetersInches

Min.Max.Min.Max.

A11.902.450.0750.096

A20.050.200.0020.008

b1.952.200.0770.087

c0.150.410.0060.016

E5.105.600.2010.220

E14.054.600.1590.181

D3.303.950.1300.156

L0.751.600.0300.063

1.522.752.3

1.52FOOTPRINTDIMENSIONS(Millimeter)

SMBPlastic.

Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap-provalofSTMicroelectronics.

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T62M0002A中文资料

T62M0002A中文资料

TECHtm T62M0002A

TM Technology Inc. reserves the right P. 1 Publication Date: JUL. 2002 to change products or specifications without notice. Revision:A T62M0002A Digital Sound Processor Embedded SRAM Features ! Operating voltage: 4.5V ~ 5.5V ! ADM algorithm ! Low noise ( -88dB typical) ! Low distortion rate (0.5% typical) ! Embedded SRAM ! Automatic reset function ! Package type: 16-pin DIP/SOP Description The T62M0002A is an echo/surround effect processor. It is designed for various audio systems including karaoke, television, sound equipment, etc. The chip consists of a built-in pre-amplifier, VCO or Voltage control OSC, Embedded SRAM, A/D and D/A converters as well as delay time control logic. Its built-In reply to SRAM can generate delay time effect and can control the delay time value through the external VCO resistor. The VCO circuit can reduce external components and make it easy to adjust the delay time. Part Number Examples Part NO. Pkg Description T62M0002A-j 16-SOP 300mil-16-SOP T62M0002A-K 16-DIP 300mil-16-DIP TECHtm T62M0002A

SSC-MBT683中文资料

SSC-MBT683中文资料

*Customer: SPECIFICATION

ITEM TOP LED DEVICE MODEL SSC-MBT722 [Contents] 1. Features ------------------------------------------------------------- 2 2. Application ------------------------------------------------------------- 2 3. Absolute Maximum Ratings ------------------------------------------ 2 4. Electro-optical Characteristics ---------------------------------------- 3 5. Rank of MBT722 ------------------------------------------ 4 6. Soldering Profile ---------------------------------------------------- 5 7. Outline Dimension ----------------------------------------------- 6 8. Packing ------------------------------------------------------------- 6 9. Reel Packing Structure ------------------------------------------------- 7 10. Precaution for Use --------------------------------------------------- 8 11. Characteristic Diagram ---------------------------------------- 9 CUSTOMER Checked by Approved by

MMSTA06中文资料

MMSTA06中文资料

SSTA06 / MMSTA06 / MPSA06TransistorsNPN General Purpose TransistorSSTA06 / MMSTA06 / MPSA06

!Features1) BVCEO < 80V.( IC=1mA)2) Complements the SSTA56 / MMSTA56 / MPSA56.!Package, marking and packaging specificationsPart No.SSTA06SST3R1GT1163000MMSTA06SMT3R1GT1463000MPSA06TO-92-T933000Packaging typeMarkCodeBasic ordering unit (pieces)!Absolute maximum ratings (Ta=25°C)ParameterCollector-base voltageCollector-emitter voltageEmitter-base voltageCollector currentJunction temperatureStorage temperatureSymbolVCBOVCEOVEBOICTjTstgLimits808040.50.625150-55~+150UnitVVVAWCollector powerdissipationPC0.2˚C˚CMPSA06SSTA06, MMSTA06!External dimensions (Units : mm)SSTA06

MMSTA06

MPSA06ROHM : SST3(1) Emitter(2) Base(3) Collector

ROHM : SMT3EIAJ : SC-59(1) Emitter(2) Base(3) Collector

ROHM : TO-92EIAJ : SC-43(1) Emitter(2) Base(3) CollectorAll terminals have same dimensions

C4532X7R2A684M资料

C4532X7R2A684M资料

• All specifications are subject to change without notice.(1/8) 001-01 / 20020221 / e42144_c2012.fmCeramic CapacitorsC SeriesFor Mid VoltageSMDFEATURES•The unique design structure for mid voltage enables a compactsize with high voltage resistance.•Rated voltage Edc: 100, 250 and 630V.•C3225, C4532 and C5750 types are specific to reflow soldering.APPLICATIONSSnapper circuits for switching power supply, ringer circuits for tele-phone and modem, or other general high voltage circuits.SHAPES AND DIMENSIONS

Dimensions in mmPRODUCT IDENTIFICATION

(1) Series name(2) Dimensions

(3) Capacitance temperature characteristicsClass 1 (Temperature compensation)

Class 2 (Temperature stable and general purpose)

(4) Rated voltage Edc

(5) Nominal capacitanceThe capacitance is expressed in three digit codes and in units ofpico farads (pF).The first and second digits identify the first and second significantfigures of the capacitance.The third digit identifies the multiplier.R designates a decimal point.