SM6T220A中文资料

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TRANSIL TM
s
PEAK PULSE POWER :600W (10/1000µs)s
BREAKDOWN VOLTAGE RANGE :From 6.8V to 220V.
s
UNI AND BIDIRECTIONAL TYPES s
LOW CLAMPING FACTOR s
FAST RESPONSE TIME s
UL RECOGNIZED
FEATURES
Symbol Parameter
Value
Unit P PP Peak pulse power dissipation (see note 1)Tj initial =T amb 600W P Power dissipation on infinite heatsink T amb =50°C 5W I FSM Non repetitive surge peak forward current for unidirectional types tp =10ms
Tj initial =T amb
100
A
T stg T j Storage temperature range Maximum junction temperature
-65to +175
150
°C °C T L
Maximum lead temperature for soldering during 10s.
260
°C
Note 1:For a surge greater than the maximum values,the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS (T amb =25°C)DESCRIPTION
Transil diodes provide high overvoltage protection by clamping action.Their instantaneous response to transient overvoltages makes them particu-larly suited to protect voltage sensitive devices such as MOS Technology and low voltage sup-plied IC’s.
August 2001-Ed:5A Symbol Parameter
Value Unit R th (j-l)Junction to leads
20°C/W R th (j-a)
Junction to ambient on printed circuit on recommended pad layout
100
°C/W
THERMAL RESISTANCES
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Note 2:Pulse test :t p <50ms.
Note 3:∆V BR =αT *(T amb -25)*V BR (25°C).
Note 4:
V R =0V,F =1MHz.For bidirectional types,capacitance value is divided by 2.
Fig.1:Peak pulse power dissipation versus initial junction temperature (printed circuit board).
s
%I PP 50
t
100
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Fig.2:Peak pulse power versus exponential pulse
duration.
Fig.3:
Clamping voltage versus peak pulse current.Exponential waveform t p =20µs ________
t p =1ms ——————-t p =10ms ...............
Note :The curves of the figure 3are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :∆V BR =αT *[T amb -25]*V BR (25°C)
For intermediate voltages,extrapolate the given results.
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Fig.6:Transient thermal impedance junc-tion-ambient versus pulse duration.
Mounting on FR4PC Board with Recommended pad
layout.
Fig.5:Peak forward voltage drop versus peak forward current (typical values for unidirectional types).
Fig.4b :Capacitance versus reverse applied voltage for bidirectional types (typical values).
Fig.4a :Capacitance versus reverse applied voltage for unidirectional types (typical
values).
Fig.7:Relative variation of leakage current versus junction temperature.
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Packaging :standard packaging is tape and reel.SOD15=Standard packaging is in Film.
PACKAGE MECHANICAL DATA SMB (Plastic)
MARKING :Logo,Date Code,Type Code,Cathode Band (for unidirectional types only).FOOTPRINT DIMENSIONS (Millimeter)SMB Plastic.
Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics ©2001STMicroelectronics -Printed in Italy -All rights reserved.
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Weight =0.12g。