vishay sst309
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J/SST/U308 SeriesVishay SiliconixDocument Number: 70237S-04028—Rev . G, 04-Jun-017-1N-Channel JFETsJ308SST308U309J309SST309U310J310SST310FEATURESBENEFITSAPPLICATIONSD Excellent High Frequency Gain:Gps 11.5 dB @ 450 MHzD Very Low Noise: 2.7 dB @ 450 MHz D Very Low DistortionD High ac/dc Switch Off-IsolationD Wideband High GainD Very High System Sensitivity D High Quality of AmplificationD High-Speed Switching Capability DHigh Low-Level Signal AmplificationD High-Frequency Amplifier/Mixer D OscillatorD Sample-and-HoldDVery Low Capacitance SwitchesDESCRIPTIONThe J/SST/U308 series offers superb amplification characteristics.Of special interest is its high-frequency performance. Even at 450MHz, this series offers high power gain at low noise.Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilitiesand is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.)For similar dual products packaged in the TO-78, see the U430/431 data sheet .DS GTO-236(SOT-23)231TO-226AA (TO-92)Top View J308J309J310DGS 123Top View SST308 (Z8)*SST309 (Z9)*SST310 (Z0)**Marking Code for TO-236Top View U309U310G and CaseTO-206AC (TO-52)DS123For applications information see AN104.J/SST/U308 Series Vishay Siliconix 7-2Document Number: 70237 S-04028—Rev. G, 04-Jun-01ABSOLUTE MAXIMUM RATINGSGate-Drain, Gate-Source Voltage–25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Gate Current :(J/SST Prefixes)10 mA. . . . . . . . . . . . . . . . . . . .(U Prefix)20 mA. . . . . . . . . . . . . . . . . . . . . . . . . .Lead Temperature (1/16” from case for 10 sec.)300_C. . . . . . . . . . . . . . . . . . . Storage Temperature :(J/SST Prefixes)–55 to 150_C. . . . . . . . . . . . . .(U Prefix)–65 to 175_C. . . . . . . . . . . . . . . . . . . . Operating Junction Temperature–55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .Power Dissipation :(J/SST Prefixes)a350 mW. . . . . . . . . . . . . . . . .(U Prefix)b500 mW. . . . . . . . . . . . . . . . . . . . . . .Notesa.Derate 2.8 mW/_C above 25_Cb.Derate 4 mW/_C above 25_CNotesa.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production Bb.Pulse test: PW v300 m s duty cycle v3%.c.Gain (G pg) measured at optimum input noise match.J/SST/U308 Series Vishay SiliconixDocument Number: 70237S-04028—Rev. G, 7-3Notesa.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production Bb.Pulse test: PW v300 m s duty cycle v3%.c.Gain (G pg) measured at optimum input noise match.J/SST/U308 SeriesVishay Siliconix7-4Document Number: 70237S-04028—Rev . G, 04-Jun-0110080200Drain Current and Transconductance Gate Leakage CurrentV DS – Drain-Source Voltage (V)6040100800604020150.40.20.811263090.6V DS – Drain-Source Voltage (V)0.40.20.810.6I D S S – S a t u r a t i o n D r a i n C u r r e n t (m A )r D S (o n ) – D r a i n -S o u r c e O n -R e s i s t a n c e ( Ω )I D – D r a i n C u r r e n t (m A )J/SST/U308 SeriesVishay SiliconixDocument Number: 70237S-04028—Rev . G, 04-Jun-017-5Output CharacteristicsV DS – Drain-Source Voltage (V)5042810402010306Transfer CharacteristicsV GS – Gate-Source Voltage (V)30–1.2–0.4–1.6–224126018–0.8Transfer CharacteristicsV GS – Gate-Source Voltage (V)100–1.8–0.6–2.4–3804020060–1.230–1.2–1.6–0.4–2241260–0.818Transconductance vs. Gate-Source VoltageV GS – Gate-Source Voltage (V)50–1.8–2.4–0.6–34020100–1.230Transconductance vs. Gate-Source VoltageV GS – Gate-Source Voltage (V)Output CharacteristicsV DS – Drain-Source Voltage (V)206821016840412g f s – F o r w a r d T r a n s c o n d u c t a n c e (m S )g f s – F o r w a r d T r a n s c o n d u c t a n c e (m S )I D – D r a i n C u r r e n t (m A )I D – D r a i n C u r r e n t (m A )I D – D r a i n C u r r e n t (m A )I D – D r a i n C u r r e n t (m A )J/SST/U308 SeriesVishay Siliconix7-6Document Number: 70237S-04028—Rev . G, 04-Jun-01110100100804020060On-Resistance vs. Drain CurrentI D – Drain Current (mA)1100.1I D – Drain Current (mA)Circuit Voltage Gain vs. Drain Current15–12–16–20–4126309–8Common-Source Input Capacitancevs. Gate-Source VoltageV GS – Gate-Source Voltage (V)Common-Source Reverse Feedback Capacitancevs. Gate-Source Voltage10–12–20–16–484206–8V GS – Gate-Source Voltage (V)1001010.11001000(m S )Input Admittance vs. Frequencyf – Frequency (MHz)1001010.11001000(m S )Forward Admittance vs. Frequencyf – Frequency (MHz)200500200500r D S (o n ) – D r a i n -S o u r c e O n -R e s i s t a n c e ( Ω )C i s s – I n p u t C a p a c i t a n c e (p F )C r s s – R e v e r s e F e e d b a c k C a p a c i t a n c e (p F )J/SST/U308 SeriesVishay SiliconixDocument Number: 70237S-04028—Rev . G, 04-Jun-017-7101001 k100 k10 k201684012Equivalent Input Noise Voltage vs. Frequencyf – Frequency (Hz)15012060300.111090Output Conductance vs. Drain CurrentI D – Drain Current (mA)1010.10.011001000(m S )Reverse Admittance vs. Frequencyf – Frequency (MHz)1001010.11001000(m S )Output Admittance vs. Frequencyf – Frequency (MHz)200500200500e n – N o i s e V o l t a g e n V / H zg o s – O u t p u t C o n d u c t a n c e (µS )This datasheet has been download from: Datasheets for electronics components.。
