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AOL1428中文资料

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Symbol
Typ Max 19254555R θJC 2.5 3.5Maximum Junction-to-Ambient
A
Steady-State °C/W Absolute Maximum Ratings T Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A
t ≤ 10s R θJA °C/W AOL1428
S
G
D
AOL1428
Symbol
Min Typ
Max
Units BV DSS 30
V 1T J =55°C
5I GSS 0.1µA V GS(th)1 1.9
2.5
V I D(ON)
120
A 7.79.5
T J =125°C
11.01316.0m Ωg FS 40S V SD 0.74
1.0V I S
46
A C iss 1000
pF C oss 340pF C rss 100pF R g
1.3ΩQ g (10V)18
nC Q g (4.5V)8.5nC Q gs 3.1nC Q gd 4.8nC t D(on) 5.6
ns t r 5.5ns t D(off)18.5ns t f 5ns t rr 29ns Q rr
24
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
Total Gate Charge V GS =10V, V DS =15V, I D =20A
Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω, R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime m ΩV GS =4.5V, I D =20A
I S =1A,V GS =0V V DS =5V, I D =20A
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance DYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage I DSS uA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0V
V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage On state drain current
I D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20A
Reverse Transfer Capacitance I F =20A, dI/dt=100A/µs
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev1: May 2006
AOL1428
AOL1428
AOL1428。

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阿尔科控制电动控制阀EX4 5 6 7 8系列 产品说明书

阿尔科控制电动控制阀EX4 5 6 7 8系列 产品说明书


EX5
0.68
16
11
15
EX6
1.57
37
26
35
EX7
5.58
131
92
126
EX8
16.95
399
278
382
Remarks: Bi-flow versions are not released for hot gas flow applications. The valve must be installed with motor downward for life expectancy.
Note 2: EX Bi-flow versions have identical capacity in both flow direction.
Note 3: Emerson SELECT program is available for selection of valves for other operating conditions.
45
34
Remarks: Bi-flow versions are not released for use below -40°C. The valve must be installed with motor downward for life expectancy.
R 404A 3.5 13 38
No. 28225789
EX4 /EX5 / EX6 EX7 EX8
Selection table
Type
Part No. Flow pattern
Capacity range
Inlet connection Outlet connection
增强型mos管应用

增强型mos管应用

沟道类型判断：寄生二极管方向判断：总结：不论N沟道还是P沟道MOS管，中间衬底箭头方向和寄生二极管箭头方向总是一致的。

2、有2个作用：开关作用、隔离作用开关作用：（2）开关条件：N沟道：Ug>Us导通，简单认为Ug=Us截止P沟道：Ug<Us导通，简单认为Ug=Us截止饱和导通问题：信号切换用的nmos管：Ug比Us大3-5V即可，实际上只要导通即可，不必饱和导通比如常见的：2N7002，2N7002E，2N7002K，2N7002D，FDV301N电压通断用的nmos管：Ug比Us大10V以上，而且开通时必须工作在饱和导通状态比如常见的：AOL1448，AOL1428A，AON7406，AON7702，MDV1660PMOS管和NMOS条件相反。

隔离作用：不论N沟道还是P沟道，寄生二极管的方向一定是和主板要实现的单向导通方向一致三个极判定：G极：很好确认D极：不论P沟道还是N沟道，单独引线就是S极：不论P沟道还是N沟道，两根线相交就是N沟道：由S极指向D极N沟道：由D极指向S极（1）接法：NMOS管：D极接输入，S极接输出PMOS管：S极接输入，D极接输出以sot-23mos管为例红表笔接d极，黑表笔接s极：二极管值低于0.700V以下pmos黑表笔接d极，红表笔接s极：二极管值高于1.200V以上红表笔接d极，黑表笔接s极：二极管值高于1.200V以上nmos黑表笔接d极，红表笔接s极：二极管值低于0.700V以下如何用电压表判断mos管好坏？用万用表二极管档分别测三个脚，测量有六个值，其中只有1个值低于0.700V以下（0.200V以上，为良品。

否则，为不良品。

测量中，红表笔接g，黑表笔接s之后，有可能在接下来测量ds这组值时，发现ds短路了，二极体值接近0.001V，本来刚测量过是好的。

有些mos管短路很快就消失了，而有些要较长时间才恢复。

因为mos管gs间存在一定的极间电容，测量中引入的电压在上面残留。

MOS管寄生二极管的方向如何判断呢？

MOS管寄生二极管的方向如何判断呢？

MOS 管寄生二极管的方向如何判断呢？
1. MOS 管开关电路学习过模拟电路的人都知道三极管是流控流器件，也就是由基极电流控制集电极与发射极之间的电流；而MOS 管是压控流器
件，也就是由栅极上所加的电压控制漏极与源极之间电流。

MOSFET 管是FET 的一种，可以被制造为增强型或者耗尽型，P 沟道或N 沟道共四种类型，但实际应用的只有增强型的N 沟道MOS 管和增强型的P 沟道MOS 管。

实际应用中，NMOS 居多。

图1 左边是N 沟道的MOS 管，右边是P 沟道的MOS 管寄生二极管的方向如何判断呢？**它的判断规则就是对于N 沟道，由S 极指向D 极；对于P 沟道，由D 极指向S 极。

如何分辨三个极？D 极单独位于一边，而G 极是第4PIN。

剩下的3 个脚则是S 极。

它们的位置是相对固定的，记住这一点很有用。

请注意：不论NMOS 管还是PMOS 管，上述PIN 脚的确定方法都是一样的。

MOS 管导通特性导通的意思是作为开关，相当于开关闭合。

NMOS 的特性：Vgs 大于某一值管子就会导通，适合用于源极接地时的情况（低端驱动），只要栅极电压达到4V 就可以了。

PMOS 的特性：Vgs 小于某一值管子就会导通，适合用于源极接VCC 时的情况（高端驱动）。

ULN2804A中文资料

ULN2804A中文资料


13
Figure 12. Representative Schematic Diagrams
1/8 ULN2803
2.7 k 7.2 k 3.0 k Pin 10 10.5 k 7.2 k 3.0 k
1/8 ULN2804
Pin 10
4
MOTOROLA ANALOG IC DEVICE DATA
元器件交易网
Figure 2.
Open h FE
+ IC
I
in
µA Open DUT ICEX Vin DUT IC V VCE
Figure 3.
Open VCE
Figure 4.
Open
µA Iin Vin µA µA Vin DUT
DUT
Open
Figure 5.
Open
Figure 6.
VR
µA IR DUT IC Vin V VCE V Open
2
MOTOROLA ANALOG IC DEVICE DATA
元器件交易网
ULN2803 ULN2804
TEST FIGURES
(See Figure Numbers in Electrical Characteristics Table)
Figure 1.
Open VCE
ULN2803 ULN2804
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Output Leakage Current (Figure 1) (VO = 50 V, TA = +70°C) (VO = 50 V, TA = +25°C) (VO = 50 V, TA = +70°C, VI = 6.0 V) (VO = 50 V, TA = +70°C, VI = 1.0 V) Collector–Emitter Saturation Voltage (Figure 2) (IC = 350 mA, IB = 500 µA) (IC = 200 mA, IB = 350 µA) (IC = 100 mA, IB = 250 µA) Input Current – On Condition (Figure 4) (VI = 17 V) (VI = 3.85 V) (VI = 5.0 V) (VI = 12 V) Input Voltage – On Condition (Figure 5) (VCE = 2.0 V, IC = 300 mA) (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) (VCE = 2.0 V, IC = 125 mA) (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 275 mA) (VCE = 2.0 V, IC = 350 mA) Input Current – Off Condition (Figure 3) (IC = 500 µA, TA = +70°C) DC Current Gain (Figure 2) (VCE = 2.0 V, IC = 350 mA) Input Capacitance Turn–On Delay Time (50% EI to 50% EO) Turn–Off Delay Time (50% EI to 50% EO) Clamp Diode Leakage Current (Figure 6) (VR = 50 V) Clamp Diode Forward Voltage (Figure 7) (IF = 350 mA) TA = +25°C TA = +70°C All Types All Types ULN2802 ULN2804 VCE(sat) All Types All Types All Types II(on) ULN2802 ULN2803 ULN2804 ULN2804 VI(on) ULN2802 ULN2803 ULN2803 ULN2803 ULN2804 ULN2804 ULN2804 ULN2804 All Types ULN2801 II(off) hFE CI ton toff IR VF – – – – – – – – 50 1000 – – – – – – – – – – – – – 100 – 15 0.25 0.25 – 1.5 13 2.4 2.7 3.0 5.0 6.0 7.0 8.0 – – 25 1.0 1.0 50 100 2.0 µA – pF µs µs µA V – – – – 0.82 0.93 0.35 1.0 1.25 1.35 0.5 1.45 V – – – 1.1 0.95 0.85 1.6 1.3 1.1 mA Symbol ICEX – – – – – – – – 100 50 500 500 V Min Typ Max Unit µA