UK2996-TA3-T中文资料

  • 格式:pdf
  • 大小:132.92 KB
  • 文档页数:6

UNISONIC TECHNOLOGIES CO., LTD
UK2996
MOSFET
600V SILICON N-CHANNEL POWER MOSFET
DESCRIPTION
The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM motor drive controls.
FEATURES
* Fast switching times
* Improved inductive ruggedness * High forward transfer admittance * Low on resistance * Low leakage current * Lower input capacitance
SYMBOL
3. Source
1. Gate
2. Drain
TO-220
1
1
TO-220F
*Pb-free plating product number: UK2996L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3
Packing
UK2996-TA3-T UK2996L-TA3-T TO-220 G D S Tube UK2996-TF3-T UK2996L-TF3-T TO-220F G D S Tube
ABSOLUTE MAXIMUM RATING
UNIT PARAMETER SYMBOL RATINGS
Drain to Source Voltage V DSS600 V
Continuous Drain Current I D 10 A
Pulsed Drain Current I DM 30 A
Drain to Gate Voltage (R GS = 20 kΩ) V DGR 600 V
Gate to Source Voltage V GSS ±30 V Avalanche Current I AR 10 A
Single Pulsed Avalanche energy (Note 2) E AS252 mJ Repetitive Avalanche Energy (Note 3) E AR 4.5 mJ
Total Power Dissipation (Tc = 25℃) P D 45 W Operating Temperature Range T J-55 ~ +150
Storage Temperature T STG-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, I AR = 10 A, V DD = 90 V, R G = 25 Ω, starting T J = 25°C.
3. Pulse width and frequency is limited by T J.
THERMAL DATA
UNIT CHARACTERISTICS SYMBOL RATINGS
Thermal Resistance, Channel to Ambient θJA 62.5 ℃/ W
W
Thermal Resistance, Channel to Case θJC 2.78 /
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SOURCE−DRAIN DIODE CHARACTERISTICS(Ta = 25°C)
TEST CIRCUIT AND WAVE FORM
(t)-15V
L
TYPICAL CHARACTERISTICS
Drain Current vs.Drain-Source Voltage
86420
Drain-Source Voltage, V DS (V)
D r a i n C u r r e n t , I D (A )
Drain-Source on Resistance vs.
1Drain Current , I D (A)
D r a i n -S o u r c e o n R e s i s t a n c e , R D S (O N ) (Ω)
35100
0.21.01.820.40.6
0.81.21.42.2
Drain Current vs.Gate-Source Voltage
Gate-Source Voltage, V GS (V)
D r a i n C u r r e n t , I D (A )
Drain-Source Voltage vs.Gate-Source
12
8
4
Gate-Source Voltage, V GS (V)
D r a i n -S o u r c e V o l t a g e , V D S (V )
16
Continuous Source C urrent vs.Drain-Source Voltage 0.1
-0.4Drain-Source Voltage, V DS (V)
C o n t i n u o u s S o u r c e C u r r e n t , I S (A )
-0.8
0.3510303
10.5。