JANTXV2N7236U中文资料

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Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode) — — -18
A
ISM Pulse Source Current (Body Diode) ➀
JANS2N7236U REF:MIL-PRF-19500/595
100V, P-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
VGS = -10V, ID = -11A➃ VGS = -10V, ID = -18A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -11A➃
VDS= -80V, VGS= 0V VDS = -80V
VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V
RthJC RthJ-PCB
Junction to Case Junction to PC Board
Min Typ Max Units — — 1.0
°C/W — 4.0 —
Test Conditions Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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Fig 9. Maximum Drain Current Vs. Case Temperature
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POWER MOSFET SURFACE MOUNT(SMD-1)
Product Summary Part Number RDS(on) ID IRFN9140 0.20Ω -18A
PD - 91553F
IRFN9140 JANTX2N7236U JANTXV2N7236U
SMD-1
Features:
n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight
— 0.20 — 0.22 Ω — -4.0 V — — S( ) — -25 — -250 µA
— -100 nA — 100 — 60 — 13 nC — 35.2 — 35 — 85
ns — 85 — 65 4.0 — nH
1400 600 — pF 200 —

Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA
VGS = -10V, ID= -18A VDS = -50V
VDD = -50V, ID = -18A RG = 9.1Ω, VGS = -10V
Measured from the center of drain pad to center of source pad
VGS = 0V, VDS = -25V f = 1.0MHz
VDD ≤ -30V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
VD D A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V QGS
VG
QG QGD
Charge
Fig 13a. Basic Gate Charge Waveform
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IRFN9140
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Units
A
W W/°C
V mJ A mJ V/ns
oC
g
For footnotes refer to the last page

1
09/22/03
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IRFN9140
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — Voltage
RDS(on)
Static Drain-to-Source On-State
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFN9140
VDS
L
RG
-V2 0GVS tp
D .U.T IA S
0.0 1Ω
DR IVER

Resistance

VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
6.2
IDSS
Zero Gate Voltage Drain Current


IGSS
Gate-to-Source Leakage Forward

IGSS
TJ TSTG
Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
-18 -11 -72 125 1.0 ±20 500 -18 12.5 -5.0 -55 to 150
300 (for 5 S) 2.6(typical)
Gate-to-Source Leakage Reverse

Qg
Total Gate Charge

Qgs
Gate-to-Source Charge

Qgd
Gate-to-Drain (‘Miller’) Charge

td(on)
Turn-On Delay Time

tr
Rise Time

td(off)
PD @ TC = 25°C
Max. Pear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂