BF1214,115;中文规格书,Datasheet资料

1.Product profile1.1General descriptionThe BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges.The transistor has a SOT363 micro-miniature plastic package.1.2FeaturesI Two low noise gain controlled amplifiers in a single package; both with a partly integrated biasI Superior cross modulation performance during AGC I High forward transfer admittanceI High forward transfer admittance to input capacitance ratioI Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF applications1.3ApplicationsI Gain controlled low noise amplifiers for VHF and UHF applications with 5V supply voltageN digital and analog television tuners N professional communication equipmentBF1214Dual N-channel dual gate MOSFETRev. 01 — 30 October 2007Product data sheetCAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be takenduring transport and handling.1.4Quick reference data[1]T sp is the temperature at the soldering point of the source lead.[2]Calculated from S-parameters.[3]Measured in Figure 24 test circuit.2.Pinning information3.Ordering informationTable 1.Quick reference data for amplifier A and BSymbol ParameterConditions Min Typ Max Unit V DS drain-source voltage DC --6V I D drain currentDC--30mA P tot total power dissipation T sp ≤107°C[1]--180mW |y fs |forward transfer admittance f = 100 MHz; T j =25°C;I D =18mA 273237mS C iss(G1)input capacitance at gate1f =100MHz[2]- 2.2 2.7pF C rss reverse transfer capacitance f =100MHz[2]-20-fF NF noise figuref =400MHz; Y S =Y S(opt)-0.9 1.5dB f =800MHz; Y S =Y S(opt)- 1.2 1.8dB Xmodcross modulationinput level for k =1 % at 40dB AGC; f w =50MHz;f unw =60MHz[3]102105-dB µVT jjunction temperature--150°CTable 2.Discrete pinningPin Description Simplified outlineSymbol1drain (AMP A)2source 3drain (AMP B)4gate1 (AMP B)5gate26gate1 (AMP A)132456sym119AMP ADA S DBG1A G2G1BAMP BTable 3.Ordering informationType numberPackage NameDescriptionVersion BF1214-plastic surface-mounted package; 6 leadsSOT3634.Marking5.Limiting values[1]T sp is the temperature at the soldering point of the source lead.Table 4.MarkingType numberMarking DescriptionBF1214SB** = p : made in Hong Kong * = t : made in Malaysia * = w : made in ChinaTable 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit Per MOSFETV DS drain-source voltage DC -6V I D drain current DC-30mA I G1gate1 current -±10mA I G2gate2 current -±10mA P tot total power dissipation T sp ≤107°C[1]-180mW T stg storage temperature −65+150°C T jjunction temperature-150°CFig 1.Power derating curveT sp (˚C)020015050100001aac19310015050200250P tot (mW)06.Thermal characteristics7.Static characteristics[1]R G1 connects gate1 to V GG = 5 V .Table 6.Thermal characteristicsSymbol ParameterConditionsTyp Unit R th(j-sp)thermal resistance from junction to solder point240K/WTable 7.Static characteristics T j =25°C.Symbol ParameterConditionsMin Typ Max UnitPer MOSFET; unless otherwise specifiedV (BR)DSSdrain-source breakdown voltageV G1-S =V G2-S =0V; I D =10µA amplifier A 6--V amplifier B6--V V (BR)G1-SS gate1-source breakdown voltage V G2-S =V DS =0V; I G1-S =10mA 6-10V V (BR)G2-SS gate2-source breakdown voltage V G1-S =V DS =0V; I G2-S =10mA 6-10V V F(S-G1)forward source-gate1 voltage V G2-S =V DS =0V; I S-G1=10mA 0.5- 1.5V V F(S-G2)forward source-gate2 voltage V G1-S =V DS =0V; I S-G2=10mA 0.5- 1.5V V G1-S(th)gate1-source threshold voltage V DS =5V; V G2-S =4V; I D =100µA 0.3- 1.0V V G2-S(th)gate2-source threshold voltage V DS =5V; V G1-S =5V; I D =100µA 0.4- 1.0V I DSdrain-source currentV G2-S =4V[1]amplifier A; V DS(A)=5V; R G1(A)=68k Ω13-23mA amplifier B; V DS(B)=5V; R G1(B)=68k Ω13-23mA I G1-Sgate1 cut-off currentV G2-S =0V; V DS(A)=V DS(B)=0V amplifier A; V G1-S(A)=5V --50nA amplifier B; V G1-S(B)=5V--50nA I G2-Sgate2 cut-off currentV G2-S =4V; V DS(A)=V DS(B)=0V;V G1-S(A)=V G1-S(B)=0V--20nA8.Dynamic characteristics[1]Calculated from S-parameters.[2]Measured in Figure 24 test circuit.Table 8.Dynamic characteristics for amplifier A and BCommon source; T amb =25°C; V G2-S =4V; V DS =5V; I D =18mA.Symbol Parameter ConditionsMin Typ Max Unit |y fs |forward transfer admittance f =100MHz; T j =25°C 273237mS C iss(G1)input capacitance at gate1f =100MHz [1]- 2.2 2.7pF C iss(G2)input capacitance at gate2f =100MHz [1]- 3.5-pF C oss output capacitance f =100MHz[1]-0.8-pF C rss reverse transfer capacitance f =100MHz[1]-20-fF G trtransducer power gainamplifier A; B S =B S(opt); B L =B L(opt)[1]f =200MHz; G S =2mS; G L =0.5mS 313539dB f =400MHz; G S =2mS; G L =1mS 273135dB f =800MHz; G S =3.3mS; G L =1mS 222630dB amplifier B; B S =B S(opt); B L =B L(opt)[1]f =200MHz; G S =2mS; G L =0.5mS 313539dB f =400MHz; G S =2mS; G L =1mS 293337dB f =800MHz; G S =3.3mS; G L =1mS252933dB NFnoise figuref =11MHz; G S =20mS; B S =0 S - 3.0-dB f =400MHz; Y S =Y S(opt)-0.9 1.5dB f =800MHz; Y S =Y S(opt)-1.21.8dBXmodcross modulationinput level for k =1 %; f w =50MHz;f unw =60MHz [2]at 0dB AGC 90--dB µV at 10dB AGC -94-dB µV at 20dB AGC -99-dB µV at 40dB AGC102105-dB µV8.1Graphs for amplifier A and B(1)V G2-S =4.0V .(2)V G2-S =3.5V .(3)V G2-S =3.0V .(4)V G2-S =2.5V .(5)V G2-S =2.0V .(6)V G2-S =1.5V .(7)V G2-S =1.0V .V DS =5V;T j =25°C.(1)V G1-S =1.8V .(2)V G1-S =1.7V .(3)V G1-S =1.6V .(4)V G1-S =1.5V .(5)V G1-S =1.4V .(6)V G1-S =1.3V .(7)V G1-S =1.2V .(8)V G1-S =1.1V .(9)V G1-S =1.0V .V G2-S =4V; T j =25°C.Fig 2.Transfer characteristics; typical values Fig 3.Output characteristics; typical valuesV G1-S (V)0 2.01.50.5 1.0001aag99320103040I D (mA)(1)(2)(3)(4)(5)(6)(7)001aag994V DS (V)064220103040I D (mA)(1)(2)(3)(4)(5)(6)(7)(8)(9)(1)V G2-S =4.0V .(2)V G2-S =3.5V .(3)V G2-S =3.0V .(4)V G2-S =2.5V .(5)V G2-S =2.0V .(6)V G2-S =1.5V .(7)V G2-S =1.0V .V DS =5V;T j =25°C.(1)V G2-S =4.0V .(2)V G2-S =3.5V .(3)V G2-S =3.0V .(4)V G2-S =2.5V .(5)V G2-S =2.0V .(6)V G2-S =1.5V .(7)V G2-S =1.0V .V DS =5V; T j =25°C.Fig 4.Gate1 current as a function of gate1 voltage;typical valuesFig 5.Forward transfer admittance as a function ofdrain current; typical valuesV DS =5V;V G2-S =4V; T j =25°C.V DS =5V; V G2-S =4V; R G1=68k Ω; T j =25°C.Fig 6.Drain current as a function of gate1 current;typical valuesFig 7.Drain current as a function of gate1 supplyvoltage (V GG ); typical values001aag995V G1-S (V)0 2.01.50.5 1.04080120I G1(µA)(1)(2)(3)(4)(5)(6)(7)001aag996I D (mA)04030102020103040|y fs |(mS)(7)(6)(5)(4)(3)(2)(1)001aag997I G1 (µA)06040201261824I D (mA)001aag998V GG (V)0542311051520I D (mA)(1)R G1=47k Ω.(2)R G1=56k Ω.(3)R G1=68k Ω.(4)R G1=82k Ω.(5)R G1=100k Ω.(6)R G1=120k Ω.(7)R G1=150k Ω.(8)R G1=180k Ω.(9)R G1=220k Ω.V G2-S =4V; T j =25°C.(1)V GG =5.0V .(2)V GG =4.5V .(3)V GG =4.0V .(4)V GG =3.5V .(5)V GG =3.0V .T j =25°C; R G1=68k Ω (connected to V GG ).Fig 8.Drain current as a function of V DS and V GG ;typical values Fig 9.Drain current as a function of gate2 voltage;typical values001aag999V GG = V DS (V)054231101552025I D (mA)(1)(2)(3)(4)(5)(6)(7)(8)(9)001aah000V G2-S (V)054231102030I D (mA)(1)(2)(3)(4)(5)8.2Graphs for amplifier AV DS(A)=5V;V GG =5V; I D(nom)(A)=18mA;R G1(A)=68k Ω; f w =50MHz; T amb =25°C;see Figure 24.V DS(A)=5V; V GG =5V; V G2-S(nom)=4V;R G1(A)=68k Ω; f w =50MHz; f unw =60MHz;I D(nom)(A)=18mA; T amb =25°C; see Figure 24.Fig 10.Amplifier A:typical gain reduction as a functionof the AGC voltage; typical valuesFig 11.Amplifier A: unwanted voltage for 1%cross modulation as a function of gain reduction; typical valuesV DS(A)=5V;V GG =5V; V G2-S(nom)=4V; R G1(A)=68k Ω; f w =50MHz; I D(nom)(A)=18mA; T amb =25°C; see Figure 24.Fig 12.Amplifier A: typical drain current as a function of gain reduction; typical values001aah001V AGC (V)0431230204010gain reduction (dB)50001aah002gain reduction (dB)0504020301090100110V unw (dB µV)80001aah003gain reduction (dB)05040203010102030I D (mA)V DS(A)=5V;V G2-S =4V; V DS(B)=0V;I D(A)=18mA.V DS(A)=5V; V G2-S =4V; V DS(B)=0V;I D(A)=18mA.Fig 13.Amplifier A: input admittance as a function offrequency; typical valuesFig 14.Amplifier A: forward transfer admittance andphase as a function of frequency;typical valuesV DS(A)=5V;V G2-S =4V; V DS(B)=0V;I D(A)=18mA.V DS(A)=5V; V G2-S =4V; V DS(B)=0V;I D(A)=18mA.Fig 15.Amplifier A: reverse transfer admittance andphase as a function of frequency;typical values Fig 16.Amplifier A: output admittance as a function offrequency; typical values001aah004f (MHz)1010310210−1110102b is , g is (mS)10−2g isb is001aah005f (MHz)1010310210102|y fs |(mS)ϕfs (deg)1−10−102−1|y fs |ϕfs001aah00610210103|y rs |(µS)1−102−10−103−1f (MHz)10103102ϕrsϕrs (deg)|y rs |001aah007110−110b os , g os (mS)10−2f (MHz)10103102b osg os分销商库存信息: NXPBF1214,115。