©1995Document No. TC-2529(O. D. No. TC-8078)Date Published April 1995 P Printed in Japan2SK24612ELECTRICAL CHARACTERISTICS (T A = 25 ˚C)Test Circuit 3 Gate ChargeV GS = 20 → Test Circuit 1 Avalanche CapabilityLTest Circuit 2 Switching TimePG.L DDt = 1 s Duty Cycle ≤ 1 %µThe application circuits and their parameters are for references only and are not intended for use in actual design-in's.2SK24613TYPICAL CHARACTERISTICS (T A = 25 ˚C)I D - D r a i n C u r r e n t - AV GS - Gate to Source Voltage - VI D - D r a i n C u r r e n t - ADERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA d T - P e r c e n t a g e o f R a t e d P o w e r - %TOTAL POWER DISSIPATION vs.CASE TEMPERATURE2SK24614TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTHPW - Pulse Width - sr t h (t ) - T r a n s i e n t T h e r m a l R e s i s t a n c e - ˚C /WFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTI D - Drain Current - A| y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - SDRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R D S (om ΩDRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENTGATE TO SOURCE CUTOFF VOLTAGE vs.CHANNEL TEMPERATURET ch - Channel Temperature - ˚CV G S (o f f ) - G a t e t o S o u r c e C u t o f f V o l t a g e - VI D - Drain Current - AR D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - m Ω40100.0010.010.111001 000 1 m10 m100 m1101001 000101001010010008000.51.01.52.00µµ2SK24615DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURER D S (o n ) - D r a in t o S o u r c e O n-S t a t e R e s i s t a n c e - m ΩSOURCE TO DRAIN DIODE FORWARD VOLTAGEI S D - D i o d e F o r w a r d C u r r e n t - AV DS - Drain to Source Voltage - VC i s s , C o s s , C r s s - C a p a c i t a n c e - p FI D - Drain Current - At d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n s1.00401101001000101001 00010 000101001 000V G S - G a t e t o S o u r c e V o l t a g e - VREVERSE RECOVERY TIME vs.DRAIN CURRENTI D - Drain Current - At r r - R e v e r s e R e c o v e r y t i m e - n sdi/dt = 50 A/ sV GS = 0100.11001 00010 0001.010100DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q g - Gate Charge - nCV D S - D r a i n t o S o u r c e V o l t a g e - V0204060802468101214160µ2SK24616SINGLE AVALANCHE ENERGY vs.INDUCTIVE LOADL - Inductive Load - HIAS-SingleAvalancheEnergy-mJSINGLE AVALANCHE ENERGYDERATING FACTORStarting T ch - Starting Channel Temperature - ˚C1.010100REFERENCEThe diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.7[MEMO]No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。
