SSI-LXH9SRD;中文规格书,Datasheet资料
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G = Gate C = Collector E = EmitterTAB = CollectorSymbol Test ConditionsMaximum RatingsV CES T J = 25°C to 150°C1200 V V CGR T J = 25°C to 150°C, R GE = 1M Ω1200 V V GES Continuous ±20 V V GEM Transient ±30VI C25T C = 25°C 48A I C100T C = 100°C 24A I CM T C = 25°C, 1ms 96AI A T C = 25°C 20 A E AST C = 25°C250 mJSSOA V GE = 15V, T J = 125°C, R G = 5ΩI CM = 48A(RBSOA)Clamped inductive load @V CE ≤ 1200V P C T C = 25°C250W T J -55 ... +150 °CT JM 150°C T stg -55 ... +150°C M dMounting torque 1.13/10 Nm/lb.in.T L Maximum lead temperature for soldering 300 °C T SOLD 1.6mm (0.062 in.) from case for 10s 260 °C Weight6gSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max.BV CES I C = 250μA, V GE = 0V 1200 V V GE(th)I C= 250μA, V CE = V GE2.5 5.0 VI CES V CE= V CES 100 μA V GE = 0VT J = 125°C1.5 mAI GES V CE = 0V, V GE = ±20V±100 nAV CE(sat)I C = 20A, V GE = 15V, Note 2 3.6 4.2 VT J = 125°C 3.1 VFeaturesInternational standard packages:JEDEC TO-247ADIGBT and anti-parallel FRD in one packageMOS Gate turn-on -drive simplicitySonic-FRD diode-soft recovery with low I RMAvalanche rated ApplicationsAC motor speed control DC servo and robot drives DC choppersUninterruptible power supplies (UPS)Switch-mode and resonant-mode power suppliesGenX3TM 1200V IGBTIXGH24N120C3H1V CES = 1200V I C25= 48A V CE(sat)≤ 4.2V t fi(typ)= 110nsHigh speed PT IGBTs for 10-50kHz SwitchingTO-247ADTABIXYS reserves the right to change limits, test conditions, and dimensions.Symbol Test Conditions Characteristic ValuesReverse Diode (FRED)Symbol Test ConditionsCharacteristic Values Notes:1. Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R G .2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.PRELIMINARY TECHNICAL INFORMATIONThe product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.IXYS reserves the right to change limits, test conditions, and dimensions.IXYS reserves the right to change limits, test conditions, and dimensions.。
HS301 Series• 3.0°C/W Thermal resistance• Suitable for 1 single or dual SSRs • DIN rail or panel mountingGENERAL SPECIFICATIONSControl VoltageDin-Rail Mount Model NumberHS301DRThermal resistance [°C/W] 3.0Panel Mount HS3013.0Surface area [in²/cm²]59/381Heat sink mounting Panel or Din-Rail Mount59/381Panel Mount Weight [lbs/grs] 0.47/209Material Aluminum 0.40/178Aluminum FinishNone SSR Mounting Holes/ threads 2, 8x32None 2, 8x32Mounting screw torque [in lbs/nm]15-20/1.7-2.215-20/1.7-2.2Number and type of relay accepted 1 or 2 single or dualAccepts Fan/size [mm]Yes/ 1-401 or2 single or dualYes/ 1-40Tolerances: ±0.02 in / 0.5 mmAll dimensions are in: inches [millimeters]MECHANICAL SPECIFICATIONSHS301[40.0]Side View1.87[47.7]3.19 [81.0]TAP .262X 6-32 UNC-2BMECHANICAL SPECIFICATIONSRev. 120811AGENCY APPROVALSHS301DRSide ViewTAP .333.19 [81.0]1.57 [40.0]1.83 [46.5]]ANNEX - ENVIROMENTAL INFORMATIONThe environmental information disclosed in this annex including the EIP Pollution logo are in compliance with People’s Republic of China Electronic Industry Standard SJ/T11364 – 2006, Marking for Control of Pollution Caused by Electronic Information Products.附件 - 环保信息此附件所标示的包括电子信息产品污染图标的环保信息符合中华人民共和国电子行业标准 SJ/T11364 - 2006,电子信息产品污染控制标识要求。
G = Gate C = Collector E = Emitter TAB = CollectorSymbol Test ConditionsMaximum RatingsV CES T J = 25°C to 150°C1200 V V CGR T J = 25°C to 150°C, R GE = 1M Ω1200 V V GES Continuous ±20 V V GEM Transient ±30VI C25T C = 25°C 48A I C100T C = 100°C 24A I CM T C = 25°C, 1ms 96AI A T C = 25°C 20 A E AST C = 25°C250 mJSSOA V GE = 15V, T J = 125°C, R G = 5ΩI CM = 48A(RBSOA)Clamped inductive load @V CE ≤ 1200V P C T C = 25°C250W T J -55 ... +150 °C T JM 150°C T stg -55 ... +150°C M dMounting torque 1.13/10 Nm/lb.in.T L Maximum lead temperature for soldering 300°C T SOLD 1.6mm (0.062 in.) from case for 10s 260 °CWeightTO-263 2.5 g TO-247 6.0 g TO-2203.0 gSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max.BV CES I C = 250μA, V GE = 0V 1200 V V GE(th)I C= 250μA, V CE = VGE2.5 5.0 VI CES V CE = V CES 100 μA V GE = 0VT J = 125°C1.5 mAI GES V CE = 0V, V GE = ±20V±100 nAV CE(sat)I C = 20A, V GE = 15V, Note 2 3.6 4.2 VT J = 125°C 3.1 VFeatureszInternational standard packages:JEDEC TO-247AD zMOS Gate turn-on -drive simplicity zAvalanche ratedApplicationsz AC motor speed controlz DC servo and robot drives z DC choppersz Uninterruptible power supplies (UPS)zSwitch-mode and resonant-mode power suppliesGenX3TM 1200V IGBTV CES = 1200V I C25= 48A V CE(sat)≤ 4.2V t fi(typ)= 110nsHigh speed PT IGBTs for 10-50kHz SwitchingIXGA24N120C3IXGH24N120C3IXGP24N120C3TO-220 (IXGP)TO-263 (IXGA)GETO-247 (IXGH)G EC G CEC C CIXYS reserves the right to change limits, test conditions, and dimensions.Symbol Test Conditions Characteristic ValuesNotes:1. Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R G .2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.PRELIMINARY TECHNICAL INFORMATIONThe product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.TO-263 (IXGA) OutlineIXYS reserves the right to change limits, test conditions, and dimensions.IXYS reserves the right to change limits, test conditions, and dimensions.。