【STM32】如何将资源烧写⾄外部flash，如spi-flashSTM32将资源烧写⾄外部flash⽅式⼤致分为通过IDE与应⽤程序⼀起和通过CubeProgranmmer单独烧写两种：⽅式⼀、使⽤IDE加载烧写算法，烧录应⽤程序时⼀并写⼊，具体就是修改分散加载链接脚本将部分常量数据移⾄外部flash，烧写算法制作⼯程如下主要实现两个⽂件，接⼝实现⽂件 <FLashPrg.c> 和设备描述⽂件 <FLashPrg.c>FLashPrg.c1/**************************************************************************//**2 * @file FlashDev.c3 * @brief Flash Device Description for New Device Flash4 * @version V1.0.05 * @date 10. January 20186 ******************************************************************************/7/*8 * Copyright (c) 2010-2018 Arm Limited. All rights reserved.9 *10 * SPDX-License-Identifier: Apache-2.011 *12 * Licensed under the Apache License, Version 2.0 (the License); you may13 * not use this file except in compliance with the License.14 * You may obtain a copy of the License at15 *16 * /licenses/LICENSE-2.017 *18 * Unless required by applicable law or agreed to in writing, software19 * distributed under the License is distributed on an AS IS BASIS, WITHOUT20 * WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.21 * See the License for the specific language governing permissions and22 * limitations under the License.23*/2425 #include "..\FlashOS.H"// FlashOS Structures262728struct FlashDevice const FlashDevice = {29 FLASH_DRV_VERS, // Driver Version, do not modify!30"STM32F429_W25Q128", // Device Name31 EXTSPI, // Device Type320x90000000, // Device Start Address330x01000000, // Device Size in Bytes (256kB)34256, // Programming Page Size350, // Reserved, must be 0360xFF, // Initial Content of Erased Memory37100, // Program Page Timeout 100 mSec383000, // Erase Sector Timeout 3000 mSec3940// Specify Size and Address of Sectors410x001000, 0x000000, // Sector Size 8kB (8 Sectors)42// 0x010000, 0x010000, // Sector Size 64kB (2 Sectors)43// 0x002000, 0x030000, // Sector Size 8kB (8 Sectors)44 SECTOR_END45 };FLashPrg.c1/**************************************************************************//**2 * @file FlashPrg.c3 * @brief Flash Programming Functions adapted for New Device Flash4 * @version V1.0.05 * @date 10. January 20186 ******************************************************************************/7/*8 * Copyright (c) 2010-2018 Arm Limited. All rights reserved.9 *10 * SPDX-License-Identifier: Apache-2.011 *12 * Licensed under the Apache License, Version 2.0 (the License); you may13 * not use this file except in compliance with the License.14 * You may obtain a copy of the License at15 *16 * /licenses/LICENSE-2.017 *18 * Unless required by applicable law or agreed to in writing, software19 * distributed under the License is distributed on an AS IS BASIS, WITHOUT20 * WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.21 * See the License for the specific language governing permissions and22 * limitations under the License.23*/2425 #include "..\FlashOS.H"// FlashOS Structures26 #include ".\flash\bsp_spi_flash.h"272829#define PAGE_SIZE SPI_FLASH_PageSize303132 uint8_t auxBuf[PAGE_SIZE];33 uint32_t baseAddr;3435/*36 Mandatory Flash Programming Functions (Called by FlashOS):37 int Init (unsigned long adr, // Initialize Flash38 unsigned long clk,39 unsigned long fnc);40 int UnInit (unsigned long fnc); // De-initialize Flash41 int EraseSector (unsigned long adr); // Erase Sector Function42 int ProgramPage (unsigned long adr, // Program Page Function43 unsigned long sz,44 unsigned char *buf);4546 Optional Flash Programming Functions (Called by FlashOS):47 int BlankCheck (unsigned long adr, // Blank Check48 unsigned long sz,49 unsigned char pat);50 int EraseChip (void); // Erase complete Device51 unsigned long Verify (unsigned long adr, // Verify Function52 unsigned long sz,53 unsigned char *buf);5455 - BlanckCheck is necessary if Flash space is not mapped into CPU memory space56 - Verify is necessary if Flash space is not mapped into CPU memory space57 - if EraseChip is not provided than EraseSector for all sectors is called58*/596061/*62 * Initialize Flash Programming Functions63 * Parameter: adr: Device Base Address64 * clk: Clock Frequency (Hz)65 * fnc: Function Code (1 - Erase, 2 - Program, 3 - Verify)66 * Return Value: 0 - OK, 1 - Failed67*/6869int Init (unsigned long adr, unsigned long clk, unsigned long fnc)70 {71/* Add your Code */72 baseAddr = adr;73 SPI_FLASH_Init();74return (0); // Finished without Errors75 }767778/*79 * De-Initialize Flash Programming Functions80 * Parameter: fnc: Function Code (1 - Erase, 2 - Program, 3 - Verify)81 * Return Value: 0 - OK, 1 - Failed82*/8384int UnInit (unsigned long fnc)85 {86/* Add your Code */87return (0); // Finished without Errors88 }899091/*92 * Erase complete Flash Memory93 * Return Value: 0 - OK, 1 - Failed94*/9596int EraseChip (void)97 {98/* Add your Code */99 SPI_FLASH_BulkErase();100return (0); // Finished without Errors101 }102103104/*105 * Erase Sector in Flash Memory106 * Parameter: adr: Sector Address107 * Return Value: 0 - OK, 1 - Failed108*/109110int EraseSector (unsigned long adr)111 {112/* Add your Code */113 SPI_FLASH_SectorErase(adr - baseAddr);114return (0); // Finished without Errors115 }116117118/*119 * Program Page in Flash Memory120 * Parameter: adr: Page Start Address121 * sz: Page Size122 * buf: Page Data123 * Return Value: 0 - OK, 1 - Failed124*/125126int ProgramPage (unsigned long adr, unsigned long sz, unsigned char *buf)127 {128/* Add your Code */129 SPI_FLASH_PageWrite(buf, adr - baseAddr, sz);130return (0); // Finished without Errors131 }132133/*134 * Verify Flash Contents135 * Parameter: adr: Start Address136 * sz: Size (in bytes)137 * buf: Data138 * Return Value: (adr+sz) - OK, Failed Address139*/140141/*142 Verify function is obsolete because all other function leave143 the SPIFI in memory mode so a memory compare could be used.144*/145 unsigned long Verify (unsigned long adr, unsigned long sz, unsigned char *buf)146 {147int i;148 SPI_FLASH_BufferRead(auxBuf, adr - baseAddr, sz);149for (i = 0; i < PAGE_SIZE; i++) {150if (auxBuf[i] != buf[i]) {151return (adr + i); // Verification Failed (return address)152 }153 }154return (adr + sz); // Done successfully155 }修改好适配⾃⼰的硬件接⼝，编译会⽣成 .FLM格式的烧写算法⽂件，实际是通过如下命令⽣成的⽤法：烧写程序时选择刚才⽣成的算法⽂件即可⽅式⼆、使⽤编程⼯具STM32CubeProgrammer，将数据直接烧写⾄外部flash，烧写算法制作⼯程如下主要实现两个⽂件，接⼝实现⽂件 <Loader_Src.c> 和设备描述⽂件 <Dev_Inf.c>Dev_Inf.c1 #include "Dev_Inf.h"23/* This structure containes information used by ST-LINK Utility to program and erase the device */4#if defined (__ICCARM__)5 __root struct StorageInfo const StorageInfo = {6#else7struct StorageInfo const StorageInfo = {8#endif9"M25P64_STM3210E-EVAL", // Device Name + version number10 SPI_FLASH, // Device Type110x00000000, // Device Start Address120x00800000, // Device Size in Bytes (8MBytes/64Mbits)130x00000100, // Programming Page Size 16Bytes140xFF, // Initial Content of Erased Memory15// Specify Size and Address of Sectors (view example below)160x00000080, 0x00010000, // Sector Num : 128 ,Sector Size: 64KBytes170x00000000, 0x00000000,18 };1920/* Sector coding example21 A device with succives 16 Sectors of 1KBytes, 128 Sectors of 16 KBytes,22 8 Sectors of 2KBytes and 16384 Sectors of 8KBytes2324 0x00000010, 0x00000400, // 16 Sectors of 1KBytes25 0x00000080, 0x00004000, // 128 Sectors of 16 KBytes26 0x00000008, 0x00000800, // 8 Sectors of 2KBytes27 0x00004000, 0x00002000, // 16384 Sectors of 8KBytes28 0x00000000, 0x00000000, // end29*/Loader_Src.c1 #include "stm32f10x.h"2 #include "stm32_eval_spi_flash.h"3 #include "stm3210e_eval.h"456/**7 * Description :8 * Initilize the MCU Clock, the GPIO Pins corresponding to the9 * device and initilize the FSMC with the chosen configuration10 * Inputs :11 * None12 * outputs :13 * R0 : "1" : Operation succeeded14 * "0" : Operation failure15 * Note: Mandatory for all types of device16*/17int Init (void)18 {19 SystemInit();20 sFLASH_Init();21return1;22 }232425/**26 * Description :27 * Read data from the device28 * Inputs :29 * Address : Write location30 * Size : Length in bytes31 * buffer : Address where to get the data to write32 * outputs :33 * R0 : "1" : Operation succeeded34 * "0" : Operation failure35 * Note: Mandatory for all types except SRAM and PSRAM36*/37int Read (uint32_t Address, uint32_t Size, uint8_t* buffer)38 {39 sFLASH_ReadBuffer(buffer, Address, Size);40return1;41 }424344/**45 * Description :46 * Write data from the device47 * Inputs :48 * Address : Write location49 * Size : Length in bytes50 * buffer : Address where to get the data to write51 * outputs :52 * R0 : "1" : Operation succeeded53 * "0" : Operation failure54 * Note: Mandatory for all types except SRAM and PSRAM55*/56int Write (uint32_t Address, uint32_t Size, uint8_t* buffer)57 {58 sFLASH_WriteBuffer(buffer, Address, Size);59return1;60 }616263/**64 * Description :65 * Erase a full sector in the device66 * Inputs :67 * None68 * outputs :69 * R0 : "1" : Operation succeeded70 * "0" : Operation failure71 * Note: Not Mandatory for SRAM PSRAM and NOR_FLASH72*/73int MassErase (void)74 {75 sFLASH_EraseBulk();76return1;77 }7879/**80 * Description :81 * Erase a full sector in the device82 * Inputs :83 * SectrorAddress : Start of sector84 * Size : Size (in WORD)85 * InitVal : Initial CRC value86 * outputs :87 * R0 : "1" : Operation succeeded88 * "0" : Operation failure89 * Note: Not Mandatory for SRAM PSRAM and NOR_FLASH90*/91int SectorErase (uint32_t EraseStartAddress, uint32_t EraseEndAddress)92 {93 EraseStartAddress = EraseStartAddress - EraseStartAddress % 0x10000; 9495while (EraseEndAddress >= EraseStartAddress) {96 sFLASH_EraseSector(EraseStartAddress);97 EraseStartAddress += 0x10000;98 }99100return1;101 }102103/**104 * Description :105 * Calculates checksum value of the memory zone106 * Inputs :107 * StartAddress : Flash start address108 * Size : Size (in WORD)109 * InitVal : Initial CRC value110 * outputs :111 * R0 : Checksum value112 * Note: Optional for all types of device113*/114 uint32_t CheckSum(uint32_t StartAddress, uint32_t Size, uint32_t InitVal)115 {116 uint8_t missalignementAddress = StartAddress % 4;117 uint8_t missalignementSize = Size ;118int cnt;119 uint32_t Val;120 uint8_t value;121122 StartAddress -= StartAddress % 4;123 Size += (Size % 4 == 0) ? 0 : 4 - (Size % 4);124125for(cnt = 0; cnt < Size ; cnt += 4) {126 sFLASH_ReadBuffer(&value, StartAddress, 1);127 Val = value;128 sFLASH_ReadBuffer(&value, StartAddress + 1, 1);129 Val += value << 8;130 sFLASH_ReadBuffer(&value, StartAddress + 2, 1);131 Val += value << 16;132 sFLASH_ReadBuffer(&value, StartAddress + 3, 1);133 Val += value << 24;134135if(missalignementAddress) {136switch (missalignementAddress) {137case1:138 InitVal += (uint8_t) (Val >> 8 & 0xff);139 InitVal += (uint8_t) (Val >> 16 & 0xff);140 InitVal += (uint8_t) (Val >> 24 & 0xff);141 missalignementAddress -= 1;142break;143144case2:145 InitVal += (uint8_t) (Val >> 16 & 0xff);146 InitVal += (uint8_t) (Val >> 24 & 0xff);147 missalignementAddress -= 2;148break;149150case3:151 InitVal += (uint8_t) (Val >> 24 & 0xff);152 missalignementAddress -= 3;153break;154 }155 } else if((Size - missalignementSize) % 4 && (Size - cnt) <= 4) {156switch (Size - missalignementSize) {157case1:158 InitVal += (uint8_t) Val;159 InitVal += (uint8_t) (Val >> 8 & 0xff);160 InitVal += (uint8_t) (Val >> 16 & 0xff);161 missalignementSize -= 1;162break;163164case2:165 InitVal += (uint8_t) Val;166 InitVal += (uint8_t) (Val >> 8 & 0xff);167 missalignementSize -= 2;168break;169170case3:171 InitVal += (uint8_t) Val;172 missalignementSize -= 3;173break;174 }175 } else {176 InitVal += (uint8_t) Val;177 InitVal += (uint8_t) (Val >> 8 & 0xff);178 InitVal += (uint8_t) (Val >> 16 & 0xff);179 InitVal += (uint8_t) (Val >> 24 & 0xff);180 }181182 StartAddress += 4;183 }184185return (InitVal);186 }187188189/**190 * Description :191 * Verify flash memory with RAM buffer and calculates checksum value of192 * the programmed memory193 * Inputs :194 * FlashAddr : Flash address195 * RAMBufferAddr : RAM buffer address196 * Size : Size (in WORD)197 * InitVal : Initial CRC value198 * outputs :199 * R0 : Operation failed (address of failure)200 * R1 : Checksum value201 * Note: Optional for all types of device202*/203 uint64_t Verify (uint32_t MemoryAddr, uint32_t RAMBufferAddr, uint32_t Size, uint32_t missalignement) 204 {205 uint32_t InitVal = 0;206 uint32_t VerifiedData = 0;207 uint8_t TmpBuffer = 0x00;208 uint64_t checksum;209 Size *= 4;210211 checksum = CheckSum((uint32_t)MemoryAddr + (missalignement & 0xf), Size - ((missalignement >> 16) & 0xF), InitVal);212213while (Size > VerifiedData) {214 sFLASH_ReadBuffer(&TmpBuffer, MemoryAddr + VerifiedData, 1);215216if (TmpBuffer != *((uint8_t*)RAMBufferAddr + VerifiedData))217return ((checksum << 32) + MemoryAddr + VerifiedData);218219 VerifiedData++;220 }221222return (checksum << 32);223 }修改好适配⾃⼰的硬件接⼝，编译会⽣成 .stldr格式的烧写算法⽂件，实际是通过如下命令⽣成的⽤法：烧写程序时选择刚才⽣成的算法⽂件即可。
