DTA143TKAT146;DTA143TMT2L;DTA143TUAT106;DTA143TETL;中文规格书,Datasheet资料
- 格式:pdf
- 大小:603.37 KB
- 文档页数:11
Data Sheet
EMT3F
D
A
x
S A
b e
HE
E
c
e
A2
A
A1
S
l1
b2
Patterm of terminal position areas
MILIMETERS MIN MAX 0.65 0.85 0.00 0.10 0.60 0.80 0.21 0.36 0.08 0.18 1.50 1.70 0.76 0.96 0.50 1.50 1.70 0.37 0.35 0.55 0.10 MILIMETERS MIN MAX 1.05 0.46 0.65 INCHES MIN 0 0.024 0.008 0.003 0.059 0.03 0.02 0.059 0.015 0.014 INCHES MIN MAX 0.041 0.018 0.026 0.022 0.004 0.067 MAX 0.004 0.031 0.014 0.007 0.067 0.038
COLLECTOR CURRENT : Ic (mA)
COLLECTOR CURRENT : IC (mA)
-80
-1
-60
-0.1
Ta=100ºC 25ºC -40ºC
-40
-200μA -150μA
-0.01
-20
-100μA -50μA
-0.001 0 -0.5 -1 -1.5 -2
0 0 -2 -4 -6 -8
Dimension in mm/inches
© 2012 ROHM Co., Ltd. All rights reserved.
e1
4/9
2012.04 - Rev.A
/
DTA143T series
lDimensions (Unit : mm)
Typ. 250 4.7 250
Max. -0.5 -0.5 -0.3 600 6.11 -
Unit V V V mA mA V kW MHz
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage
DC current gain Input resistance Transition frequency
0V, IE = 5mA, f = 100MHz
*1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint
0A
-10
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs. Collector Current
DIM A A1 b b1 c D E e HE L Lp x DIM e1 b2 b3 l1 MILIMETERS MIN MAX 0.45 0.55 0.00 0.10 0.17 0.27 0.27 0.37 0.08 0.18 1.10 1.30 0.70 0.90 0.40 1.10 1.30 0.10 0.30 0.20 0.40 0.10 MILIMETERS MIN MAX 0.80 0.37 0.47 0.50 INCHES MIN 0.018 0 0.007 0.011 0.003 0.043 0.028 0.02 0.043 0.004 0.008 INCHES MIN 0.03 0.015 0.019 0.02 MAX 0.051 0.004 MAX 0.022 0.004 0.011 0.015 0.007 0.051 0.035
Collector-emitter breakdown voltage
Data Sheet
Symbol VCBO VCEO VEBO IC
Values -50 -50 -5 -100 150
Unit V V V mA mW
PC *2 200 Tj Tstg 150 -55 to +150 mW C C
DTA143T series
PNP -100mA -50V Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
lOutline Parameter Value
VMT3 Collector Base Emitter Base Emitter EMT3F Collector
Fig.1 Grounded emitter propagation characteristics
-10 VCE= -5V
Fig.2 Grounded emitter output characteristics
-100 Ta=25ºC
IB= -500μA -450μA -400μA -350μA -300μA -250μA
lPackaging specifications Part No. DTA143TM DTA143TEB DTA143TE DTA143TUB DTA143TUA DTA143TKA Package VMT3 EMT3F EMT3 UMT3F UMT3 SMT3 Package size (mm) 1212 1616 1616 2021 2021 2928 Taping code T2L TL TL TL T106 T146 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 180 180 180 180 180 8 8 8 8 8 8 8,000 3,000 3,000 3,000 3,000 3,000 Marking 93 93 93 93 93 93
Lp
L
DTA143T series
lDimensions (Unit : mm)
D A b1 Q c
Data Sheet
EMT3
HE
E
L1
e
b
A3 x S A b3
l1
Lp A A1
S b2
l1
e
Patterm of terminal position areas
DIM A A1 A3 b b1 c D E e HE L1 Lp Q x DIM e1 b2 b3 l1 MILIMETERS MIN MAX 0.60 0.80 0.00 0.10 0.25 0.15 0.30 0.25 0.40 0.10 0.20 1.50 1.70 0.70 0.90 0.50 1.40 1.80 0.10 0.15 0.05 0.25 0.10 MILIMETERS MIN MAX 1.10 0.40 0.50 0.70 INCHES MIN 0.024 0 0.01 0.006 0.01 0.004 0.059 0.028 0.02 0.055 0.004 0.006 0.002 INCHES MIN 0.04 0.016 0.02 0.028 MAX 0.071 0.01 0.004 0.012 0.016 0.008 0.067 0.035 MAX 0.031 0.004
DIM A A1 A2 b c D E e HE L Lp x DIM e1 b2 l1
Dimension in mm/inches
© 2012 ROHM Co., Ltd. All rights reserved.
5/9
/
e1
2012.04 - Rev.A
© 2012 ROHM Co., Ltd. All rights reserved.
1/9
2012.04 - Rev.A
/
DTA143T series
lAbsolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation DTA143TM DTA143TEB DTA143TE DTA143TUB DTA143TUA DTA143TKA Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25C) Parameter Collector-base breakdown voltage
DTA143TE SOT-416 (SC-75A)
UMT3 Collector Base Emitter SMT3
DTA143TUB (SC-85)
Collector Base Emitter
DTA143TUA SOT-323 (SC-70)
DTA143TKA SOT-346 (SC-59)
lInner circuit
VCEO IC R1
-50V -100mA 4.7kW
DTA143TM (SC-105AA)
EMT3 Collector Base Emitter
DTA143TEB (SC-89)
UMT3F Collector Base Emitter
lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types :DTC143T series 6) Complex transistors :EMB3 /UMB3N / IMB3A /EMA3 /UMA3N /FMA3A (PNP type) 7) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit