FDPF13N50FT中文资料

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristicsf = 1.0MHzC oss Output Capacitance--180235pF C rss Reverse Transfer Capacitance --2025pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 250V, I D = 13A R G = 25Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400V, I D = 13A V GS = 10V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gd Gate-Drain Charge--18.5--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current ----52A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 13A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 13AdI F /dt =100A/µs (Note 4)--100160ns Q rrReverse Recovery Charge--0.35--µCUnclamped Inductive Switching Test Circuit & WaveformsLIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I19。

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQP13N50C/FQPF13N50CNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =6.0 mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 6.5 A--0.390.48Ωg FSForward TransconductanceV DS = 40 V, I D = 6.5 A (Note 4)--15--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--15802055pF C oss Output Capacitance--180235pF C rssReverse Transfer Capacitance--2025pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 13 A,R G = 25 Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400 V, I D = 13 A,V GS = 10 V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gdGate-Drain Charge--18.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current----52A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 13 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 13 A,dI F / dt = 100 A/µs (Note 4)--410--ns Q rrReverse Recovery Charge-- 4.5--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。