AD5254BRU50-RL7中文资料
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Quad 64-/256-Position I2C NonvolatileMemory Digital PotentiometersAD5253/AD5254 Rev.0Information furnished by Analog Devices is believed to be accurate and reliable.However, no responsibility is assumed by Analog Devices for its use, nor for anyinfringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: Fax: 781.326.8703© 2004 Analog Devices, Inc. All rights reserved.FEATURESAD5253: Quad 64-position resolutionAD5254: Quad 256-position resolution1 kΩ, 10 kΩ, 50 kΩ, 100 kΩNonvolatile memory1 stores wiper settings with write protectionPower-on refreshed to EEMEM settings in 300 µs typ EEMEM rewrite time = 540 µs typResistance tolerance stored in nonvolatile memory12 extra bytes in EEMEM for user-defined informationI2C® compatible serial interfaceDirect read/write accesses of RDAC2 and EEMEM registers Predefined linear increment/decrement commands Predefined ±6 dB step change commandsSynchronous or asynchronous quad channel updateWiper setting readback4 MHz bandwidth—1 kΩ versionSingle supply 2.7 V to 5.5 VDual supply ±2.25 V to ±2.75 V2 slave address decoding bits allow operation of 4 devices 100-year typical data retention, T A = 55°COperating temperature: –40°C to +85°C APPLICATIONSMechanical potentiometer replacementLow resolution DAC replacementRGB LED backlight controlWhite LED brightness adjustmentRF base station power amp bias controlProgrammable gain and offset controlProgrammable attenuatorsProgrammable voltage-to-current conversion Programmable power supplyProgrammable filtersSensor calibrationsGENERAL DESCRIPTIONThe AD5253/AD5254 are quad channel, I2C, nonvolatile mem-ory, digitally controlled potentiometers with 64/256 positions, respectively. These devices perform the same electronic adjust-ment functions as mechanical potentiometers, trimmers, and variable resistors.The AD5253/AD5254’s versatile programmability allows multi-ple modes of operation, including read/write accesses in the RDAC and EEMEM registers, increment/decrement of resistance, resistance changes in ±6 dB scales, wiper setting readback, and extra EEMEM for storing user-defined informa-tion, such as memory data for other components, look-up table, or system identification information.FUNCTIONAL BLOCK DIAGRAM3824--1Figure 1.The AD5253/AD5254 allow the host I2C controllers to write any of the 64-/256-step wiper settings in the RDAC registers and store them in the EEMEM. Once the settings are stored, they are restored automatically to the RDAC registers at system power-on; the settings can also be restored dynamically.The AD5253/AD5254 provide additional increment, decrement, +6 dB step change, and –6 dB step change in synchronous or asynchronous channel update modes. The increment and decrement functions allow stepwise linear adjustments, while ±6 dB step changes are equivalent to doubling or halving the RDAC wiper setting. These functions are useful for steep-slope nonlinear adjustment applications such as white LED brightness and audio volume control.The AD5253/AD5254 have a patented resistance tolerance storing function that allows the user to access the EEMEM and obtain the absolute end-to-end resistance values of the RDACs for precision applications.The AD5253/AD5254 are available in TSSOP-20 packages in1 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ options. All parts are guaranteed to operate over the –40°C to +85°C extended industrial temperature range.1The terms nonvolatile memory and EEMEM are used interchangeably.2The terms digital potentiometer and RDAC are used interchangeably.AD5253/AD5254Rev. 0 | Page 2 of 28TABLE OF CONTENTSElectrical Characteristics.................................................................3 1 kΩ Version..................................................................................3 10 kΩ, 50 kΩ, 100 kΩ Versions...................................................5 Interface Timing Characteristics (All Parts).............................7 Absolute Maximum Ratings............................................................8 ESD Caution..................................................................................8 Pin Configuration and Functional Descriptions..........................9 Typical Performance Characteristics...........................................10 I 2C Interface.....................................................................................14 I 2C Interface General Description............................................14 I 2C Interface Detail Description...............................................15 I 2C Compatible 2-Wire Serial Bus............................................19 Theory of Operation......................................................................20 Linear Increment and Decrement Commands......................20 ±6 dB Adjustments (Doubling/Halving Wiper Setting)........20 Digital Input/Output Configuration........................................21 Multiple Devices On One Bus..................................................21 Terminal Voltage Operation Range.........................................22 Power-Up and Power-Down Sequences..................................22 Layout and Power Supply Biasing............................................22 Digital Potentiometer Operation.............................................23 Programmable Rheostat Operation.........................................23 Programmable Potentiometer Operation...............................24 Applications.....................................................................................25 RGB LED LCD Backlight Controller.......................................25 Outline Dimensions.......................................................................27 Ordering Guide.. (27)REVISION HISTORYRevision 0: Initial VersionAD5253/AD5254ELECTRICAL CHARACTERISTICS1 kΩ VERSIONV DD = +3 V ± 10% or +5 V ± 10%, V SS = 0 V or V DD/V SS = ±2.5 V ± 10%, V A = +V DD, V B = 0 V, –40°C < T A < +85°C, unless otherwise noted.Rev. 0 | Page 3 of 28AD5253/AD5254Rev. 0 | Page 4 of 28AD5253/AD525410 kΩ, 50 kΩ, 100 kΩ VERSIONSV DD = +3 V± 10% or +5 V± 10%, V SS = 0 V or V DD/V SS = ±2.5 V ± 10%, V A = +V DD, V B = 0 V, –40°C < T A < +85°C, unless otherwise noted.Rev. 0 | Page 5 of 28AD5253/AD5254Rev. 0 | Page 6 of 28AD5253/AD5254Rev. 0 | Page 7 of 28INTERFACE TIMING CHARACTERISTICS (ALL PARTS)Guaranteed by design, not subject to production test. See Figure 23 for location of measured values. All input control voltages are specified with t R = t F = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V . Switching characteristics are measured using both V DD = 3 V and 5 V . When the part is not in operation, the SDA and SCL pins should be pulled high. When these pins are pulled low, the I 2C interface at these pins conducts current of about 0.8 mA at V DD = 5.5 V and 0.2 mA at V DD = 2.7 V . Table 3.Parameter Symbol Conditions Min Typ 1 Max Unit SCL Clock Frequency f SCL 400 kHz t BUF Bus Free Time between STOP and START t 1 1.3 µst HD;STA Hold Time (Repeated START) t 2After this period, the first clock pulse isgenerated0.6 µs t LOW Low Period of SCL Clock t 3 1.3 µs t HIGH High Period of SCL Clock t 4 0.6 µs t SU;STA Setup Time for START Condition t 5 0.6 µs t HD;DAT Data Hold Time t 6 0 0.9 µs t SU;DAT Data Setup Time t 7 100 ns t F Fall Time of Both SDA and SCL Signals t 8 300 ns t R Rise Time of Both SDA and SCL Signals t 9 300 ns t SU;STO Setup Time for STOP Condition t 10 0.6 µs EEMEM Data Storing Time t EEMEM_STORE 26 msEEMEM Data Restoring Time at Power On 9t EEMEM_RESTORE1V DD rise time dependent. Measure without decoupling capacitors at V DD and V SS .300 µsEEMEM Data Restoring Time upon RestoreCommand or RESET Operation 9t EEMEM_RESTORE2V DD = 5 V 300 µs EEMEM Data Rewritable Time 10 t EEMEM_REWRITE 540 µs FLASH/EE MEMORY RELIABILITYEndurance 11100 kCycles Data Retention 12 100 Years1 Typical values represent average readings at 25°C and V DD = 5 V.2Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic, except R-DNL of AD5254 1 kΩ version at V DD = 2.7V, I W = V DD /R for both V DD = 3 V or V DD = 5 V. 3INL and DNL are measured at V W with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V A = V DD and V B = 0 V. DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. 4Resistor terminals A, B, and W have no limitations on polarity with respect to each other. 5Guaranteed by design and not subject to production test. 6cmd 0 NOP should be activated after cmd 1 in order to minimize I DD_RESTORE current consumption. 7P DISS is calculated from (I DD × V DD = 5 V). 8All dynamic characteristics use V DD = 5 V. 9During power-up, all outputs preset to midscale before restoring EEMEM contents. RDAC0 has the shortest whereas RDAC3 has the longest EEMEM restore time. 10Delay time after power-on or RESET before new EEMEM data to be written. 11Endurance is qualified to 100,000 cycles per JEDEC Std. 22 method A117, and is measured at –40°C, +25°C, and +85°C; typical endurance at +25°C is 700,000 cycles. 12Retention lifetime equivalent at junction temperature (T J ) = 55°C per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6eV derates with junction temperature.AD5253/AD5254Rev. 0 | Page 8 of 28ABSOLUTE MAXIMUM RATINGSTable 4. T A = 25°C, unless otherwise notedParameter Rating V DD to GND −0.3 V, +7 V V SS to GND +0.3 V, −7 V V DD to V SS 7 V V A , V B , V W to GND V SS , V DD Maximum Current I WB , I WA Pulsed ±20 mAI WB Continuous (R WB ≤ 1 kΩ, A Open)1±5 mA I WA Continuous (R WA ≤ 1 kΩ, B Open)1 ±5 mAI AB Continuous (R AB = 1 kΩ/10 kΩ/50 kΩ/100 kΩ)1±5 mA/±500 µA/±100 µA/±50 µA Digital Inputs and Output Voltage to GND 0 V, 7 V Operating Temperature Range −40°C to +85°CMaximum Junction Temperature (T J MAX ) 150°C Storage Temperature−65°C to +150°C Lead Temperature (Soldering, 10 sec) 300°C Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C TSSOP-20 Thermal Resistance 2 θJA 143°C/WStresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.1Maximum terminal current is bounded by the maximum applied voltage across any two of the A, B, and W terminals at a given resistance, the maximum current handling of the switches, and the maximum power dissipation of the package. V DD = 5V. 2Package power dissipation = (T JMAX − T A )/θJA .ESD CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.AD5253/AD5254Rev. 0 | Page 9 of 28PIN CONFIGURATION AND FUNCTIONAL DESCRIPTIONSAD5253/AD5254TOP VIEW(Not to Scale)W01B02A03AD045W11B12A13SDA 4V SS 5V DD W3B3A3AD1109876DGND SCL W2B2A210987603842-0-002WPFigure 2. AD5253/AD5254 Pin ConfigurationAD5253/AD5254Rev. 0 | Page 10 of 28TYPICAL PERFORMANCE CHARACTERISTICSR -I N L (L S B )CODE (Decimal)03824-0-015–1.0–0.8–0.6–0.4–0.200.20.40.60.81.00326496128160192224256Figure 3. R-INL vs. CodeR D N L (L S B )CODE (Decimal)03824-0-016–1.0–0.8–0.6–0.4–0.200.20.40.60.81.00326496128160192224256Figure 4. R-DNL vs. CodeI N L (L S B )CODE (Decimal)03824-0-017–1.0–0.8–0.6–0.4–0.200.20.40.60.81.00326496128160192224256Figure 5. INL vs. Code I N L (L S B )CODE (Decimal)03824-0-018–1.0–0.8–0.6–0.4–0.200.20.40.60.81.00326496128160192224256Figure 6. DNL vs. CodeS U P P L Y C U R R E N T (µA )TEMPERATURE (°C)03824-0-019–10–8–6–4–20246810–40–20020406080100120Figure 7. Supply Current vs. TemperatureDIGITAL INPUT VOLTAGE (V)03824-0-0200.00010.010.0010.11100123456I D D (m A )Figure 8. Supply Current vs. Digital Input Voltage. T A = 25°CR W B (Ω)V BIAS (V)03824-0-021204060801001201401602002401802201023456Figure 9. Wiper Resistance vs. V BIASTEMPERATURE (°C)03824-0-022–6–4–2246–40–20020406080100120∆R W B (%)Figure 10. Change of R AB vs. TemperatureCODE (Decimal)03824-0-023050607020103040809006496128160192224256R H E O S T A T MO D E T E M P C O (p p m /°C )Figure 11. Rheostat Mode Tempco (∆R WB /R WB )/∆T × 106 vs. CodeCODE (Decimal)03824-0-02420251051530P O T E N T I O M E T E R M O D E T E M P C O (p p m /°C )Figure 12. Potentiometer Mode Tempco (∆V WB /V WB )/∆T × 106 vs. Code–60–48–24–120–36–54–30–18–6–42G A I N(d B )1k10k10100100k1M10MFREQUENCY (Hz)03824-0-025Figure 13. Gain vs. Frequency vs. Code, R AB = 1 kΩ, T A = 25°C–60–48–24–120–36–54–30–18–6–42G A I N (d B )1k 10k 10100100k 1M 10MFREQUENCY (Hz)03824-0-026Figure 14. Gain vs. Frequency vs. Code, R AB = 10 kΩ, T A = 25°C–60–48–24–120–36–54–30–18–6–42G A I N (d B )1k10k 10100100k 1M 10M FREQUENCY (Hz)03824-0-027Figure 15. Gain vs. Frequency vs. Code, R AB = 50 kΩ, T A = 25°C–60–48–24–120–36–54–30–18–6–42G A I N (d B )1k10k 10100100k 1M 10MFREQUENCY (Hz)03824-0-028Figure 16. Gain vs. Frequency vs. Code, R AB = 100 kΩ, T A = 25°C∆R A B (Ω)CODE (Decimal)03824-0-029–100–80–60–40–200204060801000326496128160192224256Figure 17. ∆R AB vs. Code, T A = 25°CCLOCK FREQUENCY (Hz)03824-0-0300.60.40.20.81.01.21100101k 10k 100k 1M 10MI D D (m A )Figure 18. Supply Current vs. Digital Input Clock Frequency03824-0-031DIGITAL FEEDTHROUGHCLK VDD = 5VV WMID-SCALE TRANSITION7FH ≥ 80HFigure 19. Clock Feedthrough and Midscale Transition Glitch03824-0-046VWB0(0xFF STORED IN EEMEM)VWB3(0xFF STORED IN EEMEM)VDD = VA0 = VA3 = 3.3V GND = VB0 = VB3MIDSCALE PRESETRESTORE RDAC0SETTING TO 0xFFRESTORE RDAC3SETTING TO 0xFFVDD (NO DE-COUPLING CAPS)MIDSCALE PRESETFigure 20. t EEMEM_RESTORE of RDAC0 and RDAC3CODE (Decimal)03824-0-0330321456816243240485664T H E O R E T I C A L I W B _M A X (m A )Figure 21. I WB_MAX vs. Code (AD5253) CODE (Decimal)03824-0-034321456326496128160192224256T H E O R E T I C A L I W B _M A X (m A)Figure 22. I WB_MAX vs. Code (AD5254)I 2C INTERFACESCLSDA03Figure 23. I 2C Interface Timing DiagramI 2C INTERFACE GENERAL DESCRIPTIONFrom Master to SlaveFrom Slave to MasterS = Start Condition. P = Stop Condition.A = Acknowledge (SDA Low).A = Not Acknowledge (SDA High).R/W = Read Enable at High; Write Enable at Low.0 WRITE(N BYTES + ACKNOWLEDGE)038Figure 24. I 2C—Master Writing Data to Slave1 READ(N BYTES + ACKNOWLEDGE)038Figure 25. I 2C—Master Reading Data From SlaveDIRECTION OF TRANSFER MAYCHANGE AT THIS POINTFigure 26. I 2C—Combined Write/ReadI 2C INTERFACE DETAIL DESCRIPTIONFrom Master to SlaveFrom Slave to MasterS = Start Condition. P = Stop Condition.A = Acknowledge (SDA Low).AD1, AD0 = I 2C Device Address Bits. Must match with the logic states at Pins AD1, AD0. R/W = Read Enable Bit, Logic High/Write Enable Bit, Logic Low.CMD/REG = Command Enable Bit, Logic High/Register Access Bit, Logic Low. EE/RDAC = EEMEM Register, Logic High/RDAC Register, Logic Low. A4, A3, A2, A1, A0 = RDAC/EEMEM Register Addresses.03842-0-007(1 BYTE +ACKNOWLEDGE)0 REGFigure 27. Single Write Mode03842-0-008(N BYTE +ACKNOWLEDGE)0 REGFigure 28. Consecutive Write ModeTable 6. Addresses for Writing Data Byte Contents to RDAC Registers (R/W = 0, CMD/REG = 0, EE/RDAC = 0)A4 A3 A2 A1 A0 RDAC Data Byte Description0 0 0 0 0 RDAC0 6-/8-bit wiper setting (2 MSBs of AD5253 are X) 0 0 0 0 1 RDAC1 6-/8-bit wiper setting (2 MSBs of AD5253 are X) 0 0 0 1 0 RDAC2 6-/8-bit wiper setting (2 MSBs of AD5253 are X) 0 0 0 1 1 RDAC3 6-/8-bit wiper setting (2 MSBs of AD5253 are X) 0 0 1 0 0 Reserved : : : : :0 1 1 1 1 ReservedRDAC/EEMEM WriteSetting the wiper position requires an RDAC write operation. The single write operation is shown in Figure 27, and the consecutive write operation is shown in Figure 28. In consecutive write operation, if the RDAC is selected and the address starts at 0, the first data byte goes to RDAC0, the second data byte goes to RDAC1, the third data byte goes to RDAC2, and the fourth data byte goes to RDAC3. This operation can be continued up to eight addresses with four unused addresses; it then loops back to RDAC0. If the address starts at any of the eight valid addresses, N, the data first goes to RDAC_N, RDAC_N + 1, and so on; it loops back to RDAC0 after the eighth address. The RDAC address is shown in Table 6.While the RDAC wiper setting is controlled by a specific RDAC register, each RDAC register corresponds to a specific EEMEM memory location, which provides nonvolatile wiper storage functionality. The addresses are shown in Table 7. The single and consecutive write operations also apply to EEMEM write operations.There are 12 nonvolatile memory locations, EEMEM4 to EEMEM15, where users can store 12 bytes of information such as memory data for other components, look-up table, or system identification information.In a write operation to the EEMEM registers, the device disables the I2C interface during the internal write cycle. Acknowledge polling, which is discussed later in the data sheet, is required to determine the completion of the write cycle.RDAC/EEMEM ReadThe AD5253/AD5254 provide two different RDAC or EEMEM read operations. For example, Figure 29 shows the method of reading the RDAC0 to RDAC3 contents without specifying the address, assuming address RDAC0 was already selected from the previous operation. If RDAC_N, other than address 0, is selected previously, readback starts with address N, followed by N + 1, and so on.Figure 30 illustrates the random RDAC or EEMEM read opera-tion. This operation allows users to specify which RDAC or EEMEM register is read by first issuing a dummy write command to change the RDAC address pointer, and then proceeding with the RDAC read operation at the new address location. Table 7. Addresses for Writing (Storing) RDAC Settings and User-Defined Data to EEMEM Registers (R/W = 0,CMD/REG = 0, EE/RDAC = 1)A4 A3 A2 A1 A0 DataByteDescription0 0 0 0 0 Store RDAC0 Setting to EEMEM01 0 0 0 0 1 Store RDAC1 Setting to EEMEM11 0 0 0 1 0 Store RDAC2 Setting to EEMEM21 0 0 0 1 1 Store RDAC3 Setting to EEMEM31 0 0 1 0 0 Store User Data to EEMEM40 0 1 0 1 Store User Data to EEMEM50 0 1 1 0 Store User Data to EEMEM60 0 1 1 1 Store User Data to EEMEM70 1 0 0 0 Store User Data to EEMEM80 1 0 0 1 Store User Data to EEMEM90 1 0 1 0 Store User Data to EEMEM100 1 0 1 1 Store User Data to EEMEM110 1 1 0 0 Store User Data to EEMEM120 1 1 0 1 Store User Data to EEMEM130 1 1 1 0 Store User Data to EEMEM140 1 1 1 1 Store User Data to EEMEM15Table 8. Addresses for Reading (Restoring) RDAC Settings and User Data from EEMEM (R/W = 1, CMD/REG = 0,EE/RDAC = 1)A4 A3 A2 A1 A0 Data Byte Description0 0 0 0 0 Read RDAC0 setting from EEMEM0 0 0 0 0 1 Read RDAC1 setting from EEMEM1 0 0 0 1 0 Read RDAC2 setting from EEMEM2 0 0 0 1 1 Read RDAC3 setting from EEMEM3 0 0 1 0 0 Read User Data from EEMEM40 0 1 0 1 Read User Data from EEMEM50 0 1 1 0 Read User Data from EEMEM60 0 1 1 1 Read User Data from EEMEM70 1 0 0 0 Read User Data from EEMEM80 1 0 0 1 Read User Data from EEMEM90 1 0 1 0 Read User Data from EEMEM100 1 0 1 1 Read User Data from EEMEM110 1 1 0 0 Read User Data from EEMEM120 1 1 0 1 Read User Data from EEMEM130 1 1 1 0 Read User Data from EEMEM140 1 1 1 1 Read User Data from EEMEM151 User can store any 64 RDAC settings for AD5253 or 256 RDAC settings for AD5254, not limited to current RDAC wiper setting, directly to EEMEM.1 READ03842-0-009Figure 29. RDAC Current Read. Restricted to Previously Selected Address Stored in the Register.0 WRITE038REPEATED START 1 READFigure 30. RDAC or EEMEM Random Read0 WRITE 03842-0-0111 CMDRDAC SLAVE ADDRESSFigure 31. RDAC Quick Command Write (Dummy Write)From Master to SlaveFrom Slave to MasterS = Start Condition P = Stop ConditionA = Acknowledge (SDA Low)A = Not Acknowledge (SDA High)AD1, AD0 = I 2C Device Address Bits. Must match with the logic states at Pins AD1, AD0. R/W = Read Enable Bit, Logic High/Write Enable Bit, Logic LowCMD/REG = Command Enable Bit, Logic High/Register Access Bit, Logic Low C3, C2, C1, C0 = Command BitsA2, A1, A0 = RDAC/EEMEM Register AddressesTable 9. RDAC-to-EEMEM Interface and RDAC Operation Quick Command Bits (CMD/REG = 1, A2 = 0)C3 C2 C1 C0 Command Description 0 0 0 0 NOP 0 0 0 1 Restore EEMEM (A1, A0) to RDAC (A1, A0)10 0 1 0 Store RDAC (A1, A0) to EEMEM (A1, A0) 0 0 1 1 Decrement RDAC (A1, A0) 6 dB 0 1 0 0 Decrement All RDACs 6 dB 0 1 0 1 Decrement RDAC (A1, A0) One Step 0 1 1 0 Decrement All RDACs One Step 0 1 1 1 Reset: Restore EEMEMs to All RDACs 1 0 0 0 Increment RDACs (A1, A0) 6 dB 1 0 0 1 Increment All RDACs 6 dB 1 0 1 0 Increment RDACs (A1, A0) One Step 1 0 1 1 Increment All RDACs One Step 1 1 0 0 Reserved : : : :1 1 1 1 ReservedRDAC/EEMEM Quick CommandsAD5253/AD5254 feature 12 quick commands that facilitate easy manipulation of RDAC wiper settings as well as provide RDAC-to-EEMEM storing and restoring functions. The command format is shown in Figure 31, and the command descriptions are shown in Table 9.When using a quick command, issuing a third byte is not needed but is allowed. The quick commands Reset and Store RDAC to EEMEM require acknowledge polling to determine whether the command has finished executing.1This command leaves the device in the EEMEM read power state, which consumes power. Issue the NOP command to return the device to the idle state.Table 10. Address Table for Reading Tolerance (CMD/REG = 0, EE/RDAC = 1, A4 = 1)A4 A3 A2 A1 A0 Data Byte Description 1 1 0 0 0 Sign and 7-Bit Integer Values of RDAC0 Tolerance (Read Only) 1 1 0 0 1 8-Bit Decimal Value of RDAC0 Tolerance (Read Only) 1 1 0 1 0 Sign and 7-Bit Integer Values of RDAC1 Tolerance (Read Only) 1 1 0 1 1 8-Bit Decimal Value of RDAC1 Tolerance (Read Only) 1 1 1 0 0 Sign and 7-Bit Integer Values of RDAC2 Tolerance (Read Only) 1 1 1 0 1 8-Bit Decimal Value of RDAC2 Tolerance (Read Only) 1 1 1 1 0 Sign and 7-Bit Integer Values of RDAC3 Tolerance (Read Only) 1 1 1 1 1 8-Bit Decimal Value of RDAC3 Tolerance (Read Only)03842-0-012AAAD7D6D5D4D3D2D1D0SIGNSIGN7 BITS FOR INTEGER NUMBER 26252423222120D7D6D5D4D3D2D1D08 BITS FOR DECIMAL NUMBER2–82–12–22–32–42–52–62–7Figure 32. Format of Stored Tolerance in Sign Magnitude Format with Bit Position Descriptions. Unit is %. Only Data Bytes Are Shown.R AB Tolerance Stored in Read-Only MemoryAD5253/AD5254 feature patented R AB tolerances storage in the nonvolatile memory. The tolerance of each channel is stored in the memory during the factory production and can be read by users at any time. The knowledge of the stored tolerance, which is the average of R AB overall codes (Figure 29), allows users to predict R AB accurately. This feature is valuable for precision, rheostat mode, or open-loop applications where knowledge of absolute resistance is critical.The stored tolerances reside in the read-only memory, and are expressed in percent. The tolerance is coded in sign magnitude binary, 16 bits long, and is stored in two memory locations (see Table 10). The data format of the tolerance is the sign magni-tude binary format; an example is shown in Figure 32. In the first memory location of the eight data bits, the MSB is designated for the sign (0 = + and 1= –) and the 7 LSBs are designated for the integer portion of the tolerance. In the second memory location, all eight data bits are designated for the decimal portion of tolerance. As shown in Table 8 and Figure 32, for example, if the rated R AB = 10 kΩ and the data readback from address 11000 shows 0001 1100 and address 11001 shows 0000 1111, then RDAC0 tolerance can be calculated as:MSB: 0 = +Next 7 MSB: 001 1100 = 288 LSB: 0000 1111 = 15 × 2–8 = 0.06 Tolerance = +28.06% and therefore R AB_ACTUAL = 12.806 kΩ EEMEM Write-Acknowledge PollingAfter each write operation to the EEMEM registers, an internal write cycle begins. The I 2C interface of the device is disabled. In order to determine if the internal write cycle is complete and the I 2C interface is enabled, interface polling can be executed. I 2C interface polling can be conducted by sending a start condi-tion followed by the slave address + the write bit. If the I 2Cinterface responds with an ACK, the write cycle is complete and the interface is ready to proceed with further operations. Other-wise, I 2C interface polling can be repeated until it succeeds. Commands 2 and 7 also require acknowledge polling.EEMEM Write ProtectionSetting the WP pin to a logic LOW after EEMEM programming protects the memory and RDAC registers from future write operations. In this mode, the EEMEM and RDAC readoperations operate as normal. When write protection is enabled, commands 1 (restore from EEMEM to RDAC) and 7 (reset) function normally to allow RDAC settings to be refreshed from the EEMEM to the RDAC registers.。