MC8820规格书
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Freescale
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology
5 VGS, GATE-SOURCE VOLTAGE (V) 15V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6
VDS = 5V
TA = -55oC
125oC
2.5V
ID, DRAIN CURRENT (A)
3.5V
20
25oC
15
15 10
2.0V
10
5
5
0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 3.5
AO8 8 20 / MC8 8 20 Dual N-Channel Logical Level MOSFET
PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.022 @ VGS = 4.5 V 20 0.030 @ VGS = 2.5V 0.047 @ VGS = 1.8V
Qg Qgs Qgd td(on) tr td(off) tf
13.4 VDS=10V, VGS=4.5V, I D=6.8A 0.9 2.0 18 VDD =10V, VGS =4.5V, I D=1A , RGE N =10Ω 25 50 25
nC
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Output Characteristics
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 2.0V 900
Transfer Characteristics
2.2
CAPACITANCE (pF)
f = 1MHz VGS = 0 V 600 Ciss
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur. Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
A
o
Symbol
VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD
Test Conditions
VGS = VDS , I D = 250 uA
Min
0.7
Typ
Max
Unit
V
VDS = 0 V, VGS = ± 12 V
VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, T J = 55 o C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.8 A VGS = 2.5 V, ID = 5.8 A VGS = 1.8 V, ID = 4.7 A VDS = 10 V, I D = 6.8 A I S = 6.8 A, VGS = 0 V 25 0.89 30
b a a
o
TA=25 C TA=70 C
oቤተ መጻሕፍቲ ባይዱ
o
ID IDM IS
6.8 5.4 ±30 1.5 1.5 1.0 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
±100
1 10 0.022 0.030 0.047
nA uA uA A Ω S V
Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward VoltageA
Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
Freescale
AO8 8 20 / MC8 8 20
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
2
Freescale
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology
5 VGS, GATE-SOURCE VOLTAGE (V) 15V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6
VDS = 5V
TA = -55oC
125oC
2.5V
ID, DRAIN CURRENT (A)
3.5V
20
25oC
15
15 10
2.0V
10
5
5
0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 3.5
AO8 8 20 / MC8 8 20 Dual N-Channel Logical Level MOSFET
PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.022 @ VGS = 4.5 V 20 0.030 @ VGS = 2.5V 0.047 @ VGS = 1.8V
Qg Qgs Qgd td(on) tr td(off) tf
13.4 VDS=10V, VGS=4.5V, I D=6.8A 0.9 2.0 18 VDD =10V, VGS =4.5V, I D=1A , RGE N =10Ω 25 50 25
nC
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Output Characteristics
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 2.0V 900
Transfer Characteristics
2.2
CAPACITANCE (pF)
f = 1MHz VGS = 0 V 600 Ciss
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur. Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
A
o
Symbol
VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD
Test Conditions
VGS = VDS , I D = 250 uA
Min
0.7
Typ
Max
Unit
V
VDS = 0 V, VGS = ± 12 V
VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, T J = 55 o C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.8 A VGS = 2.5 V, ID = 5.8 A VGS = 1.8 V, ID = 4.7 A VDS = 10 V, I D = 6.8 A I S = 6.8 A, VGS = 0 V 25 0.89 30
b a a
o
TA=25 C TA=70 C
oቤተ መጻሕፍቲ ባይዱ
o
ID IDM IS
6.8 5.4 ±30 1.5 1.5 1.0 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
±100
1 10 0.022 0.030 0.047
nA uA uA A Ω S V
Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward VoltageA
Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
Freescale
AO8 8 20 / MC8 8 20
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
2
Freescale
