MC2304DS规格书
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Units
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1
Freescale
Si 2304 DS/ MC2304 DS
Figure 6. Gate Threshold Variation with Temperature
3
Freescale
Si 2304 DS/ MC2304 DS
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristic
4
Freescale
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient
a
Symbol t <= 5 sec Steady-State RTHJA
Maximum 150 200
6 62 102 3.5 0.65 3.5 0.8 1.0 720 165 60 10 13 14 4 7 2 2 1500 400 200 20 30 30 20
mΩ S V
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time nC
b a
TA=25oC TA=70 C
o
ID IDM IS
2.5 2 10 0.46 1.25 0.8 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipationa
TA=25 C TA=70 C
o
o
PD TJ, Tstg
LБайду номын сангаасmits Unit Min Typ Max
1.0 1.5 4 7 3
100
V nA uA A
VDS = 16 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 C
o
1 10 85 125
Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage
2
Freescale
Si 2304 DS/ MC2304 DS
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
Figure 8. Capacitance Characteristic
Figure 9. Maximum Safe Operating Area
Figure 10. Breakdown Voltage Variation with Temperature
Normalized Thermal Transient Impedance, Junction to Ambient
A A
Symbol
VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
Test Conditions
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 8 V
A
VDS = 5 V, VGS = 4.5 V VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 1.7 A VDS = 5 V, ID = 3.0 A IS = 0.46 A, VGS = 0 V VDS = 10 V, VGS = 4.5 V, ID = 2.5 A VDS = 15 V, VGS = 0 V, f = 1MHz VDD = 10 V, ID = 1 A , RG = 6 Ω, VGEN = 4.5 V
Si 2304 DS/ MC2304 DS
PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.085 @ VGS = 10V 30 0.125 @ VGS = 4.5V
ID (A) 2.5 1.7
G D S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage 30 VDS V Gate-Source Voltage VGS ±20 Continuous Drain Currenta Pulsed Drain Current
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with Drain Current and Temperature
Figure 5. Transfer Characteristics
pF
ns
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
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