AO3407资料

常用P沟道场效应管大全AO P沟道场效应管系列:AO3401,3401 AO SOT-23 P场 -30V -4.2AAO3403L,AO3403,3403 AO SOT-23 P场 -30V -2.6A AO3407,3407 AO SOT-23 P场 -30V -4.1AAO3409,3409 AO SOT-23 P场 -30V -2.6AAO3413L,AO3413,3413 AO SOT-23 P场 -20V -3A AO3415,3415 AO SOT-23 P场 -20V -4AAO3419,3419 AO SOT-23 P场 -20V -3.5AAO4401,4401 AO SOP-8 P场 -30V -6.1AAO4403,4403 AO SOP-8 P场 -30V -6.1AAO4405,4405 AO SOP-8 P场 -30V -6AAO4407,4407 AO SOP-8 P场 -30V -12AAO4411,4411 AO SOP-8 P场 -30V -8AAO4413,4413 AO SOP-8 P场 -30V -15AAO4415,4415 AO SOP-8 P场 -30V -8AAO4419,4419 AO SOP-8 P场 -30V -9.7AAO4423L,AO4423,4423 AO SOP-8 P场 -30V -15A AO4425,4425 AO SOP-8 P场 -38V -14AAO4429,4429 AO SOP-8 P场 -30V -15AAO4433L,AO4433,4433 AO SOP-8 P场 -30V -11A AO4437,4437 AO SOP-8 P场 -12V -11AAO4701L,AO4701,4701 AO SOP-8 P场 -30V -5AAO6401,6401 AO TSOP-6 P场 -30V -5AAO6405,6405 AO TSOP-6 P场 -30V -5AAO6409,6409 AO TSOP-6 P场 -20V -5AAO6419,6419 AO TSOP-6 P场 -30V -5AAO6701L,AO6701,6701 AO TSOP-6 P场 -30V -2.3AAO7401L,AO7401,7401 AO SOT-323 P场 -30V -1.2AAOD403,D403 AO SOT-252 P场 -30V -85AAOD405,D405 AO SOT-252 P场 -30V -18AAOD407,D407 AO SOT-252 P场 -60V -12AAOD409,D409 AO SOT-252 P场 -60V -26AAOU401,U401 AO TO-251 P场 -60V -20AAOU417,U417 AO TO-251 P场 -30V -18AAP/富鼎 P沟道场效应管系列:AP40P03GH,AP40P03,40P03GH,40P03,SOT-252,AP/富鼎,05NPB,SMD/MOS,-30V,-30A,0.028ΩAP4435M,AP4435M,4435M AP/富鼎 SOP-8 P场 -30V -8AAP9575H,AP9575,9575H AP/富鼎 SOT-252 P场 -60V -15AAP6679H,AP6679,6679H AP/富鼎 SOT-252 P场 -30V -75AAP9563H,AP9563,9563H AP/富鼎 SOT-252 P场 -40V -2.6A AP6679P,AP6679P,6679P AP/富鼎 TO-220 P场 -30V -75AAP20P02GJ,AP20P02,20P02GJ AP/富鼎 TO-251 P场 -20V -18ACET/华瑞 P沟道场效应管系列:CEB05P03,05P03 CET/华瑞 SOT-263 P场 -30V -5A FAIRCHILD/仙童 P沟道场效应管系列:NDB6030PL,SOT-263,FAIRCHILD,SMD/MOS,P场,-30V,-30A,0.025Ω NDB6020P,SOT-263,FAIRCHILD,SMD/MOS,P场,-20V,-24A,0.05ΩFDR838P SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017ΩFDR838 SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017Ω838P SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017ΩFDS4435 FAIRCHILD SOP-8 P场 -30V -9AFDS6685 FAIRCHILD SOP-8 P场 -30V -8.8ANDS8435 FAIRCHILD SOP-8 P场 0 0NDS9435A,NDS9435 FAIRCHILD SOP-8 P场 -30V -5.3A FDN336P,FDN336 FAIRCHILD SOT-23 P场 -30V -1.3AFDN340P,FDN340 FAIRCHILD SOT-23 P场 -20V -2ANDC652P,NDC652 FAIRCHILD SOT-23-6 P场 -20V -1.3AD10P05 FAIRCHILD SOT-252 P场 -50V -10AD15P05 FAIRCHILD SOT-252 P场 -50V -15AFDD5614P,FDD5614 FAIRCHILD SOT-252 P场 -60V -15AFDD6637 FAIRCHILD SOT-252 P场 -35V -55AFQD17P06,17P06,D17P06 FAIRCHILD SOT-252 P场 -60V -17A FQD3P50,3P50,D3P50 FAIRCHILD SOT-252 P场 -500V -2.1A RFD10P03L,RFD10P03,10P03 FAIRCHILD SOT-252 P场 -30V -10ASFR9034 FAIRCHILD SOT-252 P场 -60V -14ASFR9224TM,SFR9224 FAIRCHILD SOT-252 P场 -250V -2.5ASFR9310 FAIRCHILD SOT-252 P场 -400V -1.5ANDB6030PL,NDB6030 FAIRCHILD SOT-263 P场 -30V -30ARFP15P05,15P05 FAIRCHILD TO-220 P场 -50V -15ASFP9634 FAIRCHILD TO-220 P场 -250V -5ASFS9630 FAIRCHILD TO-220F P场 -200V -6.5ASFS9634 FAIRCHILD TO-220F P场 -250V -3.4AFQU11P06TU,FQU11P06,11P06 FAIRCHILD TO-251 P场 -60V -11A FQU17P06,U17P06,17P06 FAIRCHILD TO-251 P场 -60V -12A RFD15P05,15P05 FAIRCHILD TO-251 P场 -50V -15A SFU9214 FAIRCHILD TO-251 P场 -250V -2.7ARFD17P06,17P06 FAIRCHILD TO-251短 P场 -60V -17AHIT P沟道场效应管系列:2SJ295,J295 HIT TO-220F P场 -60V -30A2SJ528S,2SJ528,J528 HIT SOT-252 P场 -60V -7A2SJ245,J245 HIT SOT-252 P场 -60V -5A2SJ529,J529 HIT SOT-252 P场 0 0infineon/英飞凌 P沟道场效应管系列:IPP100P03P3L-04,IPP100P03P3L,IPP100P03,100P03,TO-220, infineon,08NPB,P场,-30V,-100A,0.0043Ω3P03L04,TO-220,infineon,08NPB,P场,-30V,-100A,0.0043ΩSPD08P06P,SPD08P06,D08P06 infineon SOT-252 P场 -60V -8.8ASPD09P06P,SPD09P06,09P06 infineon SOT-252 P场 -60V -9ASPD18P06P,SPD18P06,18P06 infineon SOT-252 P场 -60V -18ASPD30P06P,SPD30P06,30P06 infineon SOT-252 P场 -60V -30ASPD50P03L,SPD50P03,50P03 infineon SOT-252-5 P场 -30V -50ASPB08P06P,SPB08P06,08P06 infineon SOT-263 P场 -60V -8A SPB80P06P,SPB80P06,80P06 infineon SOT-263 P 场 -60V -80Aintersil P沟道场效应管系列:IRF9540S,IRF9540,F9540 intersil SOT-263 P场 -100V -23ARFD10P03L,RFD10P03,10P03 intersil TO-251 P场 -30V -10AIR P沟道场效应管系列:IRL5602STRR,SOT-263,IR,SMD/MOS,-20V,-24A,P场,0.042ΩIRF9510STRL,SOT-263,IR,SMD/MOS,-100V,-4A,P场,1.2ΩIRFL9014,FL9014 IR SOT-223 P场 -60V -1.8A IRLML6401,LML6401 IR SOT-23 P场 12V 4.3AIRFR5305PBF,IRFR5305,FR5305 IR SOT-252 P场 -55V -31AIRFR5505,FR5505 IR SOT-252 P场 -55V -18A IRFR6215,FR6215 IR SOT-252 P场 -150V -13AIRFR9014N,IRFR9014,FR9014,FR9014N IR SOT-252 P场 -60V -5.1A IRFR9024N,FR9024N,IRFR9024 IR SOT-252 P场 -60V -8.8AIRFR9024NTRPBF,IRFR9024NTR,FR9024 IR SOT-252 P场 -60V -8.8AIRFR9110N,IRFR9110,FR9110 IR SOT-252 P场 -100V 3.1AIRFR9120N,IRFR9120,FR9120N,FR9120 IR SOT-252 P -100V -5.6A IRFR9210,FR9210 IR SOT-252 P场 -200V -1.9AIRFR9220,FR9220 IR SOT-252 P场 -200V -3.6AIRF4905NS,F4905NS IR SOT-263 P场 -55V -64AIRF5305STRL,IRF5305S,F5305S IR SOT-263 P场 -55V -31AIRF9530NS,F9530NS IR SOT-263 P场 -100V -14AIRF9640NS,IRF9640N,F9640NS IR SOT-263 P场 -200V -11AIRF9Z34S,F9Z34S IR SOT-263 P场 -60V -18AIRL5602S,IRL5602,L5602S,L5602 IR SOT-263 P场 -20V -24AIRF4905PBF,IRF4905,F4905 IR TO-220 P场 -55V -74AIRF5305PBF,IRF5305,F5305 IR TO-220 P场 -55V -31AIRF9510,F9510 IR TO-220 P场 -100V -4A IRF9530,F9530 IR TO-220 P 场 -100V -14AIRF9540N,F9540N,IRF9540,IRF9540PBF IR TO-220 P场 -100V -23AIRF9610,F9610 IR TO-220 P场 -200V -1.8AIRF9640,F9640 IR TO-220 P场 -200V -11AIRF9Z34PBF,IRF9Z34,F9Z34 IR TO-220 P场 -60V -18AIRFI9630G,IRFI9630,FI9630 IR TO-220F P场 -200V -4.3AIRFU5505,FU5505 IR TO-251 P场 -55V -18AIRFU9024N,IRFU9024,FU9024N,FU9024 IR TO-251 P场 -60V -8.8A IRFU9220N,IRFU9220,FU9220N,FU9220 IR TO-251 P场 -200V -3.6AIRF4905S,F4905S IR TO-262 P场 -55V -64A MOT P沟道场效应管系列: MTB50P03HDLT4G,MTB50P03,50P03 MOT SOT-263 P场 -30V -50A NRC P沟道场效应管系列:2SJ132,J132 NEC TO-251 P场 -30V -2A2SJ325,J325 NEC TO-251 P场 -30V -4A2SJ325-Z-E2,2SJ325-Z,J325-Z NEC SOT-252 P场 -30V -4A2SJ326,J326 NEC TO-251 P场 -60V -2A2SJ327-Z,2SJ327,J327-Z,J327 NEC SOT-252 P场 -60V -4A2SJ460TA,2SJ460,J460 NEC TO-92S P场 -50V -0.1A2SJ599,J599 NEC TO-251 P场 -60V -20A2SJ600-Z,2SJ600,J600-Z,J600 NEC SOT-252 P场 -20V -25AON P沟道场效应管系列:NTF2955T1,NTF2955 ON SOT-223 P场 -60V -1.2ANTD2955 ON SOT-252 P场 -60V -12ANTD25P03LT4,NTD25P03L,NTD25P03,D25P03L,D25P03,25P03 ON SOT-2 52 P场 -30V -25ANTD20P06LT4,NTD20P06L,NTD20P06,D20P06L,D20P06,20P06 ON SOT-2 52 P场 -60V -20ASANYO P沟道场效应管系列:2SJ653,J653,SANYO,-60V,-37A,P MOS,25mΩ 2SJ634,J634 SANYO SOT-252 P场 -60V -8A2SJ591,J591 SANYO TO-220F P场 -60V -28A 2SJ652,J652 SANYO TO-220F P场 -60V -28A2SJ653,J653 SANYO TO-220F P场 -60V -37ATM P沟道场效应管系列:TM9435AD,TM9435 TM SOT-252 P场 -30V -10ATOSHIBA/东芝 P沟道场效应管系列:TPC6103,SOT-23-6, -12V, -5.5A,0.035Ω2SJ377-Z,2SJ377,J377-Z,J377 TOSHIBA SOT-252 P场 -60V -5A2SJ439-Z,2SJ439,J439-Z,J439 TOSHIBA SOT-252 P场 -16V -5A VISHAY/威士 P沟道场效应管系列:SUM110P04-04L-E3,SUM110P04,110P04 VISHAY SOT-263 P场 -40V -110ASUP75P05-08,SUP75P05,75P05 VISHAY TO-220 P场 -50V -75A SUP75P03-07,SUP75P03,75P03 VISHAY TO-220 P场 -30V -75A SUP65P04-15-E3,SUP65P04,65P04 VISHAY TO-220 P场 -40V -65A SI4467DY-T1,SI4467DY,SI4467 VISHAY SOP-8 P场 -12V -12A茂达 P沟道场效应管系列:APM3095P,APM3095 茂达 SOT-252 P场 -30V -6A。

AO3407A30V P-Channel MOSFETGeneral DescriptionThe AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.Product SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4.3A < 48mΩ < 78mΩSOT23 Top View Bottom ViewDDDS G SGG SAbsolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTGMaximum -30 ±20 -4.3 -3.5 -25 1.4 0.9 -55 to 150Units V V AW ° CSymbolt ≤ 10s Steady-State Steady-StateRθJA RθJLTyp 70 100 63Max 90 125 80Units ° C/W ° C/W ° C/WRev 5: Nov 2011Page 1 of 5AO3407AC unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4.3A IS=-1A,VGS=0V TJ=125° C -1.4 -25 34 52 54 10 -0.7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.5 100 65 7.5 9.2 VGS=-10V, VDS=-15V, ID=-4.3A 4.6 1.6 2.2 7.5 VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=3Ω IF=-4.3A, dI/dt=100A/µs 5.5 19 7 11 5.3 11.5 11 6 48 68 78 -1.9 Min -30 -1 -5 ±100 -2.4 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nCSTATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistanceSWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µsA. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Rev 5: Nov 2011Page 2 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30 25 -10V 20 -ID (A) 15 -4V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 70 60 RDS(ON) (mΩ ) 50 40 30 20 10 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 VGS=-10V VGS=-4.5V VGS=-3.5V 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125°C 25°C -4.5V 20 -ID(A) 15 -6V 25 30 VDS=-5V1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=-10V ID=-4.3AVGS ID=-3A17 5 2 10 =-4.5V0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)120 ID=-4.3A 100 RDS(ON) (mΩ )1.0E+02 1.0E+01 1.0E+00 -IS (A)4080 125°C 60125°C 1.0E-01 1.0E-02 1.0E-0325°C4025°C1.0E-04 1.0E-0520 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 40.00.20.40.60.81.01.2-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)Rev 5: Nov 2011Page 3 of 5AO3407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10 VDS=-15V ID=-4.3A 600 6 Capacitance (pF) -VGS (Volts) Ciss 80084004Coss 2002 Crss 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 300 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100100.040 TA=25°C10.010µsPower (W)30ID (Amps)RDS(ON) limited1.0100µs 1ms 10ms 10ms200.1TJ(Max)=150°C TA=25°C10s DC100.0 0.01 0.1 1 VDS (Volts) 10 1000 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 0.01Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=125°C/WIn descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) PD Ton T TRev 5: Nov 2011Page 4 of 5AO3407AGate Charge Test Circuit & WaveformVgs Qg -10VVDCVDCDUT Vgs IgResistive Switching Test Circuit & WaveformsRL Vds Vgs Vgs Rg DUTVDCVgs VdsDiode Recovery Test Circuit & WaveformsVds + DUT Vgst rrVds Isd Vgs IgLVDC+ Vdd -VdsRev 5: Nov 2011+Chargeton td(on) tr t d(off) toff tf+--+-VdsQgsQgdVdd90%10%Q rr = - Idt-Isd-I FdI/dt -I RM VddPage 5 of 5。

A2SHB低压MOS管
A2SHB低压MOS管主要参数介绍如下：
产品型号：A2SHB 产品封装：SOT-23-3L
沟道：N沟道
漏源反向电压VDSS(V):20V
漏极电流ID(A):2.5A
耗散功率Power(W):0.83W
A2SHB低压MOS管产品详细技术参数如下规格书所示：
电子元器件储存条件：
生产设备：
超低价现货批发HC/浩畅全新原装贴片式低压MOS场效应管：
SI2300 SI2301 SI2302 SI2303 SI2304 SI2305 SI2306 SI2307
SI2309 SI2310 SI2311 SI2312 SI2313 SI2314 SI2315 SI2319
SI2321 SI2323 SI2325 SI2328 SI2335 SI2337 SI2341 SI2345
SI2351 SI2308 AO3400 AO3401 AO3402 AO3403 A O3404 AO3407
AO3409 AO3410 等系列产品！品质稳定可靠！价格优惠！
A2SHB低压MOS管的作用
1.场效应管可应用于放大。

由于场效应管放大器的输入阻抗很高，因此耦合电容可以容量较小，不必使用电解电容器。

2.场效应管很高的输入阻抗非常适合作阻抗变换。

常用于多级放大器的输入级作阻抗变换。

3.场效应管可以用作可变电阻。

4.场效应管可以方便地用作恒流源。

5.场效应管可以用作电子开关。