512M: 32M x16 Mobile DDR SDRAM Document Title512M: 32M x 16 Mobile DDR SDRAMRevision HistoryRevision No. Date History0.0Aug 21, 2007 Initial DraftEmerging Memory & Logic Solutions Inc.4F Korea Construction Financial Cooperation B/D, 301-1 Yeon-Dong, Jeju-Do, Korea Zip Code : 690-717 Tel : +82-64-740-1700 Fax : +82-64-740-1750 / Homepage : The attached datasheets provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.512M: 32M x 16 Mobile DDR SDRAM512M : 32M x 16bit Mobile DDR SDRAMTable 1: ORDERING INFORMATIONNOTE :1. EMLSI is not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in EMLSI when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.Part No.Max Freq.InterfacePackage RemarkEMD12164P-60(DDR332)166(CL3), 111(CL2)LVCMOSWafer Biz.EMD12164P-75(DDR266)133(CL3), 83(CL2)FEATURES1.8V power supply, 1.8V I/O powerLVCMOS compatible with multiplexed address.Double-data-rate architecture; two data transfers per clock cycleBidirectional data strobe(DQS) Four banks operation.MRS cycle with address key programs. CAS latency (2, & 3). Burst length (2, 4, & 8).Burst type (Sequential & Interleave). Differential clock inputs(CK and CKB). EMRS cycle with address key programs. PASR(Partial Array Self Refresh). DS (Driver Strength) Internal auto TCSR(Temperature Compensated Self Refresh) Deep power-down(DPD) mode. DM for write masking only.Auto refresh and self refresh modes. 64 refresh period (8K cycle).Operating temperature range (-25 ~ 85).GENERAL DESCRIPTIONThis EMD12164P is 536,870,912 bits synchronous double data rate Dynamic RAM. Each 134,217,728 bits bank is organized as 8,192 rows by 1024columns by 16 bits, fabricated with EMLSI’s high performance CMOS technology.This device uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls.Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.512M: 32M x 16 Mobile DDR SDRAM Table 2: Pad DescriptionSymbol Type DescriptionsCK, CKB Input Clock : CK and CKB are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CKB. Input and output data is referenced to the crossing of CK and CKB(both directions of crossing). Internal clock signals are derived from CK/ CKB.CKE Input Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operation(all banks idle), or ACTIVE POWER-DOWN(row ACTIVE in any bank). CKE is synchronous for all functions except for SELF REFRESH EXIT, which is achieved asynchronously. Input buffers, excluding CK, CKB and CKE, are disabled during power-down and self refresh mode which are contrived for low standby power consumption.CSB Input Chip Select : CSB enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CSB is registered HIGH. CSB provides for external bank selection on systems with multiple banks. CSB is considered part of the command code.RASB, CASB,WEBInput Command Inputs: CASB, RASB, and WEB(along with CSB) define the command being entered.DQM0, DQM1 Input Input Data Mask : DQM is an input mask signal for write data. Input data is masked when DQM is sam-pled HIGH along with that input data during a WRITE access. DQM is sampled on both edges of DQS. Although DQM pins are input-only, the DQM loading matches the DQ and DQS loading. For x16 devices, DQM0 corresponds to the data on DQ0-DQ7, DQM1 corresponds to the data on DQ8-DQ15.BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied.A0 - A12 Input Address Inputs: provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ / WRITE commands, to select one location out of the memory array in the respective bank. The address inputs also provide the op-code during a MODE REGISTER SET com-mand.DQ0-DQ15 I/O Data Bus: Input / OutputDQS0, DQS1 I/O Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered with write data. Used to capture write data. For x16 device, DQS0 corresponds to the data on DQ0-DQ7, DQS1 corresponds to the data on DQ8-DQ15.VDD Supply Power Supply VSS Supply GroundVDDQ Supply I/O Power Supply VSSQ Supply I/O Ground512M: 32M x 16 Mobile DDR SDRAMDevice OperationSimplified State DiagramPower OnDeep Power DownPrecharge All BanksIdle All banks prechargedSelf RefreshMRS EMRSAuto RefreshPrecharge Power DownActive Power DownRow ActiveBurst StopWRITE WRITE APrecharge PREALLREAD AREADPower appliedDPDSXMRSDPDSACTREFABSTREADREADAWRITEAPRE REFSXREFSCKEL CKEHCKELCKEH WRITEREADREADA READAPREPREPREWRITEAAutomatic Sequence Command SequenceACT = ActiveBST = Burst Terminate CKEL = Enter Power-Down CKEH =Exit Power-Down DPDS = Enter Deep Power-Down DPDSX = Exit Deep Power-DownEMRS = Ext. Mode Reg. Set MRS = Mode Register Set PRE = PrechargePREALL = Precharge All Banks REFA = Auto Refresh REFS = Enter Self RefreshREFSX = Exit Self Refresh READ = Read w/o Auto Precharge READA = Read with Auto Precharge WRITE = Write w/o Auto Precharge WRITEA = Write with Auto PrechargeREADWRITE512M: 32M x 16 Mobile DDR SDRAM FUNCTIONAL BLOCK DIAGRAM512M: 32M x 16 Mobile DDR SDRAMElectrical SpecificationsTable 3: ABSOLUTE MAXIMUM RATINGSNOTE :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.Table 4: DC OPERATING CONDITIONSRecommended operating conditions (Voltage referenced to V SS = 0V, T A = -25o C~ 85o C for Extended)1. Under all conditions, VDDQ must be less than or equal to VDD.2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.Table 5: CAPACITANCE (V DD = 1.8V, V DDQ = 1.8V, T A = 25, f=1)ParameterSymbol Value Unit Voltage on any pin relative to V SSV IN ,V OUT -0.5 ~ 2.5V Voltage on V DD and V DDQ supply relative to V SS V DD , V DDQ-0.5 ~ 2.5VStorage temperature T STG -55 ~ +150Power dissipation P D 1.0WShort circuit current I OS50ParameterSymbol Min Typ Max Unit Note Supply voltage V DD 1.7 1.8 1.95V 1V DDQ 1.7 1.8 1.95V 1Input logic high voltage V IH 0.8 x V DDQ1.8V DDQ + 0.3V 2Input logic low voltage V IL -0.300.3V 2Output logic high voltage V OH 0.9 x V DDQ--V I OH = -0.1Output logic low voltage V OL --0.1 x V DDQVI OL = 0.1Input leakage current I LI -2-2Output leakage current I LO-5-5PinSymbol Min Max Unit NoteInput capacitance(ADD, BA0~1, RASB, CASB, WEB, CSB, CKE)C IN1 1.5 3.0Input capacitance(CK, CKB)C IN2 1.5 3.5Data & DQS input/output capacitance C out 2.0 4.5Input capacitance(DM)C IN32.04.5512M: 32M x 16 Mobile DDR SDRAM Table 6: DC CHARACTERISTICSRecommended operating conditions (Voltage referenced to VSS = 0V, T A = -25 to 85)Parameter Symbol Test ConditionVersionUnit -60-75Operating one bank active-precharge current I DD0t RC = t RCmin; t CK = t CKmin; CKE is HIGH; CSB is HIGHbetween valid commands; address inputs are SWITCH-ING; data bus inputs are STABLE10080mAPrecharge power-down standby current I DD2Pall banks idle, CKE is LOW; CSB is HIGH, t CK = t CKmin;address and control inputs are SWITCHING; data businputs are STABLE0.6mAPrecharge power-down standby current with clock stop I DD2PSall banks idle, CKE is LOW; CSB is HIGH, CK = LOW,CKB = HIGH; address and control inputs are SWITCHING;data bus inputs are STABLE0.6Precharge non power-down standby current I DD2Nall banks idle, CKE is HIGH; CSB is HIGH, t CK = t CKmin;address and control inputs are SWITCHING; data businputs are STABLE2520mAPrecharge non power-down standby current with clock stop I DD2NSall banks idle, CKE is HIGH; CSB is HIGH, CK = LOW,CKB = HIGH; address and control inputs are SWITCHING;data bus inputs are STABLE55Active power-down standby current I DD3Pone bank active, CKE is LOW; CSB is HIGH, t CK =t CKmin; address and control inputs are SWITCHING; databus inputs are STABLE8mAActive power-down standby current with clock stop I DD3PSone bank active, CKE is LOW; CSB is HIGH, CK = LOW,CKB = HIGH; address and control inputs are SWITCHING;data bus inputs are STABLE5Active non power-down standby current I DD3None bank active, CKE is HIGH; CSB is HIGH, t CK =t CKmin; address and control inputs are SWITCHING; databus inputs are STABLE2525mAActive non power-down standby current with clock stop I DD3NSone bank active, CKE is HIGH; CSB is HIGH, CK = LOW,CKB = HIGH; address and control inputs are SWITCHING;data bus inputs are STABLE1010mAOperating burst read current I DD4Rone bank active; BL=4; CL=3; t CK = t CKmin; continuousread bursts; Iout = 0 mA; address inputs are SWITCHING;50% data change each burst transfer130110mAOperating burst write current I DD4Wone bank active; t CK = t CKmin; continuous write bursts;address inputs are SWITCHING; 50% data change eachburst transfer11090mAAuto-Refresh current I DD5t RC = t RFCmin; burst refresh; CKE is HIGH;address and control inputs are SWITCHING; data businputs are STABLE120120mASelf Refresh Current I DD6CKE is LOW, CK = LOW, CKB= HIGH; Extended Mode Reg-ister set to all 0s; address andcontrol inputs are STABLE;data bus inputs are STABLETCSR Range45*185°CFull Array350600µA1/2 of Full Array2505001/4 of Full Array200450Deep Power-Down Current I DD8Address and Control inputs are STABLE;data bus inputs are STABLE1010µA512M: 32M x 16 Mobile DDR SDRAMNOTE :1. IDD specifications are tested after the device is properly initialized2. Input slew rate is 1V/ns.3. Definitions for IDD:LOW is defined as V IN 0.1 * VDDQ ; HIGH is defined as V IN 0.9 * VDDQ ;STABLE is defined as inputs stable at a HIGH or LOW level ; SWITCHING is defined as :- address and command : inputs changing between HIGH and LOW once per two clock cycles ;- data bus inputs : DQ changing between HIGH and LOW once per clock cycle ; DM and DQS are STABLETable 7: AC OPERATING TEST CONDITIONS(V DD = 1.7V ~ 1.95V, T A = -25~85for Extended)NOTE :1. Under all conditions, VDDQ must be less than or equal to VDD.2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.3. CK and CKB crossing voltage.ParameterValueUnitNoteAC input levels(Vih/Vil)0.8V DDQ / 0.2 V DDQV Input timing measurement reference level 0.5V DDQ V Input rise and fall time1.0V /Output timing measurement reference level 0.5V DDQVVix0.4V DDQ (Min) / 0.6V DDQ (Max)V3Output load condition See Figure 21.8V 13.9V OH (DC) = 0.9V DDQ , I OH = -0.1V OL (DC) = 0.1V DDQ , I OL = 0.120Z0=50Vtt=0.5V DDQ5020Figure 1. DC Output Load CircuitFigure 2. AC Output Load CircuitOutputOutput10.6512M: 32M x 16 Mobile DDR SDRAMTable 8: OPERATING AC PARAMETER(AC operating conditions unless otherwise noted)Parameter Sym-bol-60-75Unit Note Min Max Min MaxDQ output access time from CK/CKB t AC25 2.5 6.0ns3 DQS output access time from CK/CKB t DQSCK25 2.5 6.0ns Clock high-level width t CH0.450.550.450.55t CK Clock low-level width t CL0.450.550.450.55t CKClock half period t HPmin(t CL,t CH)min(t CL,t CH)nsClock cycle time CL = 3t CK61007.5100ns CL = 2910012100nsDQ and DM input setup time t DS 1.0 1.0ns4,5 DQ and DM input hold time t DH 1.0 1.0ns4,5 DQ and DM input pulse width t DIPW 1.8 2.0ns Address and control input setup time t IS 1.1 1.3ns1 Address and control input hold time t IH 1.1 1.3ns1 Address and control input pulse width t IPW 2.6 2.6nsDQ & DQS low-impedance time from CK/CKB t LZ 1.0 1.0nsDQ & DQS high-impedance time from CK/CKB t HZ5 6.0nsDQS - DQ skew t DQSQ0.60.6nsDQ / DQS output hold time from DQS t QH t HP-t QHS t HP-t QHS nsData hold skew factor t QHS0.650.75nsWrite command to 1st DQS latching transition t DQSS0.75 1.250.75 1.25t CKDQS input high-level width t DQSH0.40.60.40.6t CKDQS input low-level width t DQSL0.40.60.40.6t CKDQS falling edge to CK rising - setup time t DSS0.20.2t CKDQS falling edge from CK rising - hold time t DSH0.20.2t CK MODE REGISTER SET command period t MRD22t CKWrite preamble setup time t WPRES00nsWrite postamble t WPST0.40.60.40.6t CKWrite preamble t WPRE0.250.25t CK512M: 32M x 16 Mobile DDR SDRAMNote:Table 9: Input Setup/Hold Slew Rate1. This derating table is used to increase t IS /t IH in the case where the input slew rate is below 1.0V/ns.2. Minimum 5CK of t DAL (= t WR + t RP ) is required because it need minimum 2CK for t WR and minimum 3CK for t RP .3. t AC (min) value is measured at the high Vdd(1.95V) and cold temperature(-25°C). t AC (max) value is measured at the low Vdd(1.7V) and hot temperature(85°C).t AC is measured in the device with half driver strength and under the AC output load condition (Fig.2 in Page 8).ParameterSym-bol-60-75Unit NoteMin Max Min Max Read preamble CL = 2t RPRE 0.5 1.10.5 1.1t CK CL = 30.9 1.10.9 1.1t CK Read postamblet RPST 0.40.60.40.6t CK ACTIVE to PRECHARGE command period t RAS 42100,00045100,000ns ACTIVE to ACTIVE command period t RC 6060ns AUTO REFRESH toACTIVE / AUTO REFRESH command period t RFC 9090ns 6ACTIVE to READ or WRITE delay t RCD 1818ns PRECHARGE command period t RP 1822.5ns ACTIVE bank A to ACTIVE bank b delay t RRD 1821ns Column address to Column address delay t CCD 11t CK WRITE recovery timet WR 22t CKAuto precharge write recovery + precharge time t DAL t WR+t RPt WR+t RP2Internal write to Read command delay t WTR 11t CK Self refresh exit to next valid command delay t XSR 120120nsExit power down to next valid command delay t XP t CK +t ISt CK +t ISCKE min. pulse width(high and low pulse width)t CKE 12t CK Refresh Periodt REF6464ms Input Setup/Hold Slew Rate∆t IS ∆t IH (V/ns)(ps)(ps)1.0000.8+50+500.6+100+100512M: 32M x 16 Mobile DDR SDRAMTable 10: I/O Setup/Hold Slew Rate4. This derating table is used to increase t DS /t DH in the case where the I/O slew rate is below 1.0V/ns.Table 11: I/O Delta Rise/Fall Rate(1/slewrate)5. This derating table is used to increase t DS /t DH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate is calculated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 1.0V/ns and slew rate 2 = 0.8V/ns, then the Delta Rise/Fall Rate = -0.25ns/V.6. Maximum burst refresh cycle : 8I/O Setup/Hold Slew Rate∆t DS ∆t DH (V/ns)(ps)(ps)1.0000.8+75+750.6+150+150Delta Rise/Fall Rate∆t DS ∆t DH (ns/V)(ps)(ps)0000.25+50+500.5+100+100512M: 32M x 16 Mobile DDR SDRAM Functional DescriptionThe 512Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912-bits. It is internally configured as a quad-bank DRAM. Each of the 134,217,728-bit banks is organized as 8,192 rows by 1024 columns by 16 bits.The 512Mb Mobile DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. single read or write access for the 512Mb Mobile DDR SDRAM consists of a single 2n-bit wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O balls.Read and write accesses to the Mobile DDR SDRAM are burst oriented; accesses start at a selected location and con-tinue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the READ or WRITE command are used to select the start-ing column location for the burst access.It should be noted that the DLL signal that is typically used on standard DDR devices is not necessary on the Mobile DDR SDRAM. It has been omitted to save power. Prior to normal operation, the Mobile DDR SDRAM must be initial-ized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation.InitializationMobile DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. If there is an interruption to the device power, the initialization rou-tine should be followed to ensure proper functionality of the Mobile DDR SDRAM. The clock stop feature is not avail-able until the device has been properly initialized.To properly initialize the Mobile DDR SDRAM, this sequence must be followed:1. To prevent device latch-up, it is recommended the core power (VDD) and I/O power (VDDQ) be from the samepower source and brought up simultaneously. If separate power sources are used, VDD must lead VDDQ.2. Once power supply voltages are stable and the CKE has been driven HIGH, it is safe to apply the clock.3. Once the clock is stable, a 200µs (minimum) delay is required by the Mobile DDR SDRAM prior to applying an exe cutable command. During this time, NOP or DESELECT commands must be issued on the command bus.4. Issue a PRECHARGE ALL command.5. Issue NOP or DESELECT commands for at least tRP time.6. Issue an AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. Issue a second AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. As part of the initialization sequence, two AUTO REFRESH commands must be issued. Typically, both of these commands are issued at this stage as described above. Alternately, the second AUTO-REFRESH command and NOP or DESELECT sequence can be issued between steps 10 and 11.7. Using the LOAD MODE REGISTER command, load the standard mode register as desired.8. Issue NOP or DESELECT commands for at least tMRD time.9. Using the LOAD MODE REGISTER command, load the extended mode register to the desired operating modes. Note that the sequence in which the standard and extended mode registers are programmed is not critical.10. Issue NOP or DESELECT commands for at least tMRD time.11. The Mobile DDR SDRAM has been properly initialized and is ready to receive any valid command.512M: 32M x 16 Mobile DDR SDRAM Register DefinitionMode RegistersThe mode registers are used to define the specific mode of operation of the Mobile DDR SDRAM. There are two mode registers used to specify the operational characteristics of the device. The standard mode register, which exists for all SDRAM devices, and the extended mode register, which exists on all Mobile SDRAM devices.Standard Mode RegisterThe standard mode register definition includes the selection of a burst length, a burst type, a CAS latency and an oper-ating mode, as shown in page 15. The standard mode register is programmed via the LOAD MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again. Reprogram-ming the standard mode register will not alter the contents of the memory, provided it is performed correctly. The mode register must be loaded (reloaded) when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. Mode register bits A0-A2 specify the burst length, A3 specifies the type of burst (sequential or interleaved), A4-A6 specify the CAS latency, and A7-A12 specify the operating mode.Note: Standard refers to meeting JEDEC-standard mode register definitions.Burst LengthRead and write accesses to the Mobile DDR SDRAM are burst oriented, with the burst length being programmable, as shown in page 15. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4, or 8 are available for both the sequential and the interleaved burst types.Reserved states should not be used, as unknown operation or incompatibility with future versions may result. Burst TypeAccesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected by A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address. See Table 17~19 on page 17 for more information.CAS LatencyThe CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The latency can be set to 2 or 3 clocks, as shown in page 15.For CL = 3, if the READ command is registered at clock edge n, then the data will nominally be available at (n + 2 clocks + tAC). For CL = 2, if the READ command is registered at clock edge n, then the data will be nominally be avail-able at (n + 1 clock + tAC).Reserved states should not be used as unknown operation or incompatibility with future versions may result.Operating ModeThe normal operating mode is selected by issuing a LOAD MODE REGISTER SET command with bits A7-A12 each set to zero, and bits A0-A6 set to the desired values. All other combinations of values for A7-A12 are reserved for future use and/or test modes. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result.512M: 32M x 16 Mobile DDR SDRAMExtended Mode RegisterThe extended mode register controls functions specific to low power operation. These additional functions include drive strength, temperature compensated self refresh, and partial array self refresh.This device has default values for the extended mode register (if not programmed, the device will operate with the default values . PASR = Full Array, DS = Full Drive).Temperature Compensated Self RefreshOn this version of the Mobile DDR SDRAM, a temperature sensor is implemented for automatic control of the self refresh oscillator on the device. Programming of the temperature compensated self refresh (TCSR) bits will have no effect on the device. The self refresh oscillator will continue refresh at the factory programmed optimal rate for the device temperature.Partial Array Self RefreshFor further power savings during SELF REFRESH, the PASR feature allows the controller to select the amount of memory that will be refreshed during SELF REFRESH. Low Power DDR SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array.Output Driver StrengthBecause the Mobile DDR SDRAM is designed for use in smaller systems that are mostly point to point, an option to control the drive strength of the output buffers is available. Drive strength should be selected based on the expected loading of the memory bus. Bits A5 and A6 of the extended mode register can be used to select the driver strength of the DQ outputs.Stopping the External ClockOne method of controlling the power efficiency in applications is to throttle the clock which controls the Mobile DDR SDRAM. There are two basic ways to control the clock:1. Change the clock frequency, when the data transfers require a different rate of speed.2. Stopping the clock altogether.Both of these are specific to the application and its requirements and both allow power savings due to possible less transitions on the clock path.The Mobile DDR SDRAM allows the clock to change frequency during operation, only if all the timing parameters are met with respect to that change and all refresh requirements are satisfied.The clock can also be stopped all together, if there are no data accesses in progress, either WRITEs or READs that would be effected by this change; i.e., if a WRITE or a READ is in progress the entire data burst must be through the pipeline prior to stopping the clock. CKE must be held HIGH with CK = LOW and CKB = HIGH for the full duration of the clock stop mode. One clock cycle and at least one NOP is required after the clock is restarted before a valid com-mand can be issued.It is recommended that the Mobile DDR SDRAM should be in a precharged state if any changes to the clock frequency are expected. This will eliminate timing violations that may otherwise occur during normal operational accesses.BA1=0BA0=0BA0=1BA1=0BA1=0BA1=0BA0=0BA1=1BA1=1BA0=0BA0=1- Full Array- 1/2 Array- 1/4 ArrayBA1=1BA1=1BA1=0BA1=0BA0=0BA0=1BA1=1BA0=1BA0=0BA0=0BA0=1BA1=1BA0=1Partial Self Refresh Area512M: 32M x 16 Mobile DDR SDRAMTable 12: MODE REGISTER FIELD TABLE TO PROGRAM MODESRegister Programmed with Normal MRS NOTE :1. RFU(Reserved for future use) should stay “0” during MRS cycle.Table 13: Normal MRS Mode1. MRS can be issued only at all bank precharge state.2. Minimum tRP is required to issue MRS command.Address BA0 ~ BA1A12 ~ A10/APA9A8A7A6A5A4A3A2A1A0Function "0" Setting for Normal MRSRFU *1Operating ModeCAS LatencyBTBurst LengthOperating ModeCAS Latency Burst TypeBurst Length A8A7TypeA6A5A4Latency A3Type A2A1A0DDR 00Mode Register Set000Reserved 0Sequential 000Reserved01Reserved 001Reserved1Interleave 001210Reserved 0102Mode Select 010411Reserved0113BA1BA0Mode0118---100Reserved 0Setting for Nor-mal MRS100Reserved ---101Reserved 101Reserved ---110Reserved 110Reserved ---111Reserved111Reserved512M: 32M x 16 Mobile DDR SDRAMTable 14: Register Programmed with Extended MRSNOTE :1. RFU(Reserved for future use) should stay “0” during MRS and EMRS cycle.Table 15: EMRS for PASR(Partial Array Self Refresh) & DS(Driver Strength)Table 16: Internal Temperature Compensated Self Refresh (TCSR)NOTE :1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the two temperature range : Max 85, Max 452. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.3. It has +/- 5 tolerance.Address BA1BA0 A12 ~ A10/AP A9A8A7A6A5A4A3A2A1A0Function Mode SelectRFU *1DSRFU *1PASRMode SelectDriver Strength PASRBA1BA0MODE A6A5Driver Strength A2A1A0Size of Refreshed Array00Normal MRS 00Full 000Full Array 01Reserved011/20011/2 of Full Array 10EMRS for DDR SDRAM101/40101/4 of Full Array 11Reserved111/8011Reserved 100Reserved 101Reserved 110Reserved 111ReservedTemperature RangeSelf Refresh Current (I DD 6)UnitFull Array1/2 of Full Array1/4 of Full ArrayMax 85600500450Max 45350250200。
常用AD转换芯片型号列表型号产品描述AD1380JD 16位 20us高性能模数转换器(民用级)AD1380KD 16位 20us高性能模数转换器(民用级)AD1671JQ 12位 1.25MHz采样速率带宽2MHz模数转换器(民用级) AD1672AP 12位 3MHz采样速率带宽20MHz单电源模数转换器(工业级) AD1674JN 12位100KHz采样速率带宽500KHz模数转换器(民用级) AD1674AD 12位 100KHz采样速率带宽500KHz模数转换器(工业级) AD202JN 小型2KHz隔离放大器(民用级)卧式AD202JY 小型2KHz隔离放大器(民用级)立式AD204JN 小型5KHz隔离放大器(民用级)卧式AD22100KT 带信号调理比率输出型温度传感器AD22105AR 可编程温控开关电阻可编程温度控制器 SOIC AD261BND-1 数字隔离放大器AD2S99AP 可编程正弦波振荡器(工业级) PLCC AD420AN-32 16位单电源 4-20mA输出数模转换器(工业级)DIP AD420AR-32 16位单电源 4-20mA输出数模转换器(工业级)SOIC AD421BN 16位环路供电符合HART协议 4-20mA输出数模转换器(工业级)DIP AD421BR 16位环路供电符合HART协议 4-20mA输出数模转换器(工业级)SOIC AD515AJH 低价格，低偏置电流，高输入阻抗运放(民用级) TO-99AD515ALH 低价格，低偏置电流，高输入阻抗运放(民用级) TO-99 AD517JH 低失调电压，高性能运放 (民用级) TO-99 AD518JH 宽带，低价格运放(民用级) TO-99 AD521JD 电阻设置增益精密仪表放大器(民用级)DIPAD524AD 引脚设置增益高精度仪表放大器(工业级)DIP AD526BD 软件编程仪表放大器(工业级)DIPAD526JN 软件编程仪表放大器(民用级)DIPAD532JH 模拟乘法器(民用级)TO-99AD534JD 模拟乘法器(民用级)DIPAD534JH 模拟乘法器(民用级)TO-99AD536AJH 集成真有效值直流转换器(民用级)TO-99 AD536AJD 集成真有效值直流转换器(民用级)DIPAD536AJQ 集成真有效值直流转换器(民用级)DIPAD537JH 150KHZ集成压频转换器(民用级)TO-99AD537SH 150KHZ集成压频转换器(军用级)TO-99AD538AD 单片实时模拟乘法器(工业级)DIPAD539JN 宽带双通道线性乘法器(民用级)DIPAD542JH 低价格，低偏置电流，高输入阻抗运放(民用级) TO-99 AD545ALH 低偏置电流，高输入阻抗运放(民用级) TO-99 AD546JN 静电计放大器(民用级)DIP AD547JH 低价格，低偏置电流，高输入阻抗运放(民用级) TO-99 AD548JN 精密 BiFET输入运放(民用级)DIPAD549JH 低偏置电流，高输入阻抗运放(民用级) TO-99 AD549LH 低偏置电流，高输入阻抗运放(民用级) TO-99 AD5539JN 高速运放(民用级)DIP AD557JN 微处理器兼容完整7位电压输出数模转换器(民用)DIP AD558JN 微处理器兼容完整8位电压输出数模转换器(民用)DIP AD565AJD 12位 0.25us电流输出数模转换器(民用)DIP AD568JQ 12位超高速电流输出数模转换器(民用)DIP AD569JN 16位 3us电流输出数模转换器(民用)DIP AD570JD/+ 8位 25us模数转换器(民用)DIP AD574AJD 12位 25us模数转换器(民用)DIP AD574AKD 12位 25us模数转换器(民用)DIP AD578KN 12位 3us模数转换器(民用)DIPAD580JH 精密 2.5V电压基准源(民用级)TO-52 AD580LH 精密 2.5V电压基准源(民用级)TO-52 AD581JH 精密 10V电压基准源(民用级)TO-5 AD582KD 0.7us采样保持放大器(民用)DIPAD584JH 引脚设置输出电压基准源(民用级)TO-99 AD584JN 引脚设置输出电压基准源(民用级)DIP AD585AQ 3us采样保持放大器(工业级)DIPAD586JN 精密 5V电压基准源(民用级)DIP。
VIAVI Solutions技术数据表VIAVI4100 系列 OTDR A 、B 和 C 模块适用于 MTS-2000、4000 V2、5800、 OneAdvisor 800 和 FTH-9000主要特性y 高达 46 dB 的动态范围以及 256000 个采样点 y 针对下一代 PON 网络架构优化，可测试最高 1 x 256 分光比和非均分分路器y 1310/1550/1625 或 1650 纳米双波长/三波长版本 y 标准和内置滤波器的二合一测试端口连接 – 更快、无错误的测试，避免客户测试中断y 即时双向 OTDR 事件损耗分析“TrueBIDIR ”（已获得专利）y 针对所有测试波长的整合报告将需要管理的测试工作量减少了 50%y 测试端口状况检查，防止不良引导光纤连接和不准确的事件检测y 支持为各种网络应用（FTTA 、FTTH 、企业、高光纤数线缆）量身定做的智能链路图示y 可针对 FiberComplete PRO 应用进行现场升级 - OTDR 环回、双向 OTDR 分析(TrueBIDIR)、高光纤数 (MPO)光纤基础设施是网络性能和交付服务质量的基础。
OTDR 是可用于验证已安装光缆和无源组件状况的唯一工具，可确保光纤链路符合设计规范，以及承包商的工艺符合要求的质量。
模块便携性允许在不同的 VIAVI 平台之间迁移光纤测试功能，从而可以灵活地将现有的光纤认证工具迁移到不同的技术，例如同轴电缆和射频、有源 xWDM 、MPO/带状电缆或网络层测试（例如以太网、BERT 、CPRI 等）。
VIAVI Solutions 4100 系列 OTDR 模块使现场技术人员能够快速、可靠且经济高效地安装、开通任何光纤网络架构并对其进行故障排查：数据中心互联、城域、长途和 FTTx/接入，适用于无线/5G 光链路、点对点或点对多点无源光网络 (PON)。
MTS-4000 V2用于测试光纤网络的双槽位手持式模块化平台MTS-2000用于光纤网络测试的单槽位手持式模块化平台MTS-5800用于测试 10G 以太网和光纤网络的手持式测试仪器OneAdvisor 800一体化有线和无线网络安装和维护测试解决方案标准功能优势包括：y标准多脉冲采集 (SmartAcq) – 改进事件检测（接头、连接器、折弯……），并且不再需要昂贵而笨重的发射光缆y图标式的示意图（智能链路映射- SLM）– 消除 OTDR 解读错误，并通过即时识别故障和损伤来加快结果分析y SmartTEST模式可在整个 OTDR 测试步骤中提示并帮助光纤技术人员（新手或有经验的技术人员）完成测试。
三极管参数2SB系列三极管参数2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1068 SI-P 20V 2A 0.75W 180MHz | 2SB1071 SI-P 40V 4A 25W 150MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz 2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 20 2SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K 2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K 2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K 2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB511E SI-P 35V 1.5A 10W 8MHz | 2SB524 SI-P 60V 1.5A 10W 70MHz2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=42SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/2200深圳市同成源科技有限公司发布人：admin 发布时间：2007年06月26日20时09分2SD系列三极管参数2SD1010 SI-N 50V 50mA 0.3W 200MHz2SD1012 SI-N 20V 0.7A 0.25W 250MHz | 2SD1018 SI-N 250V 4A 80W B>2502SD1027 N-DARL+D 20V 15A 100W B>1 | 2SD1033 SI-N 200V 2A 20W 10MHz2SD1036 SI-N 150/120V 15A 150W | 2SD1047 SI-N 160V 12A 100W 15MHz2SD1048 SI-N 20V 0.7A 0.25W 250MHz | 2SD1049 SI-N 120V 25A 100W2SD1051 SI-N 50V 1.5A 1W 150MHz | 2SD1055 SI-N 40V 2A 0.75W 100MHz2SD1062 SI-N 60V 12A 40W 10MHz | 2SD1064 SI-N 60V 12A 80W2SD1065 SI-N 60V 15A 90W | 2SD1073 N-DARL 300V 4A 40W B>1K2SD1088 N-DARL 300V 6A 30W B>2000 | 2SD1113K N-DARL+D 300V 6A 40W2SD1128 N-DARL 150V 5A 30W | 2SD1135 SI-N 80V 4A 40W2SD1138 SI-N 200V 2A 30W | 2SD1140 N-DARL 30V 1.5A 0.9W2SD1145 SI-N 60V 5A 0.9W 120MHz | 2SD1148 SI-N 140V 10A 100W 20MHz2SD1153 SI-N 80V 1.5A 0.9W | 2SD1163A SI-N 300V 7A 40W2SD1164 SI-N 150V 1.5A 10W DAR+DI | 2SD1173 SI-N+D 1500V 5A 70W2SD1187 SI-N 100V 10A 80W 10MHz | 2SD1189 SI-N 40V 2A 5W 100MHz2SD1192 N-DARL+D 70V 10A 40W B=5K | 2SD1196 N-DARL+D 110V 8A 40WB=402SD1198 N-DARL 30V 1A 1W 150MHz | 2SD1207 SI-N 60V 2A 1W2SD1210 N-DARL+D 150V 10A 80W B=5 | 2SD1213 SI-N 60V 20A 50W2SD1225 SI-N 40V 1A 1W 150MHz | 2SD1238 SI-N 120V 12A 80W 20MHz2SD1244 SI-N+D 2500/900V 1A 50W | 2SD1246 SI-N 30V 2A 0.75W2SD1247 SI-N 30V 2.5A 1W | 2SD1254 SI-N 130V 3A 30W2SD1255 SI-N 130V 4A 35W 30MHz | 2SD1263A SI-N 400V 0.75A 35W 30MHz2SD1264 SI-N 200V 2A 30W POWER | 2SD1265 SI-N 60V 4A 30W 25kHz2SD1266 SI-N 60V 3A 35W POWER | 2SD1267 SI-N 60V 4A 40W 20MHz2SD1270 SI-N 130V 5A 2W 30MHz | 2SD1271 SI-N 130V 7A 40W 30MHz2SD1272 SI-N 200V 1A 40W 25MHz | 2SD1273 SI-N 80V 3A 40W 50MHz2SD1274 SI-N 150V 5A 40W 40MHz | 2SD1276 N-DARL 60V 4A 40W2SD1286 N-DARL+D 60V 1A 8W B=1K-3 | 2SD1288 SI-N 120V 7A 70W2SD1289 SI-N 120V 8A 80W | 2SD1292 SI-N 120V 1A 0.9W 100MHz2SD1293 SI-N 120V 1A 1W 100MHz | 2SD1297 N-DARL+D 150V 25A 100W2SD1302 SI-N 25V 0.5A 0.6W 200MHz | 2SD1306 SI-N 30V 0.7A 150mW 250MHz 2SD1308 N-DARL+D 150V 8A 40W | 2SD1313 SI-N 800V 25A 200W 6MHz2SD1314 N-DARL+D 600V 15A 150W | 2SD1330 SI-N 25V 0.5A 0.6W 200MHz2SD1347 SI-N 60V 3A 1W 150MHz | 2SD1348 SI-N 60V 4A 10W 150MHz2SD1350A SI-N 600V 0.5A 1W 55MHz | 2SD1376K N-DARL+D 120V 1.5A 40W2SD1378 SI-N 80V 0.7A 10W 120MHz | 2SD1379 N-DARL 40V 2A 10W 150MHz 2SD1380 SI-N 40V 2A 10W 100MHz | 2SD1382 SI-N 120V 1A 10W 100MHz2SD1384 SI-N 40V 2A 0.75W 100MHz | 2SD1391 SI-N 1500V 5A 80W2SD1392 N-DARL+D 60V 5A 30W B=800 | 2SD1397 SI-N+D 1500V 3.5A 50W2SD1398 SI-N+D 1500V 5A 50W | 2SD1399 SI-N+D 1500V 6A 80W2SD1403 SI-N 1500V 6A 120W | 2SD1404 SI-N+D 300V 7A 25W 1us2SD1405 SI-N 50V 3A 25W 2us | 2SD1406 SI-N 60V 3A 25W 0.8us2SD1407 SI-N 100V 5A 30W 12MHz | 2SD1408 SI-N 80V 4A 30W 8MHz2SD1409 N-DARL+D 600V 6A 25W 1us | 2SD1411 SI-N 100V 7A 30W 10MHz2SD1413 N-DARL+D 60V 3A 20W .O1US | 2SD1415 N-DARL+D 100V 7A 30W 0.8us2SD1426 SI-N+D 1500V 3.5A | 2SD1427 SI-N+D 1500V 5A 80W2SD1428 SI-N+D 1500V 6A 80W | 2SD1432 SI-N 1500V 6A 80W2SD1439 SI-N+D 1500V 3A 50W | 2SD1441 SI-N+D 1500V 4A 80W2SD1446 N-DARL+D 500V 6A 40W B>50 | 2SD1453 SI-N 1500V 3A 50W2SD1457 N-DARL+D 140V 6A 60W | 2SD1458 SI-N 20V 0.7A 1W2SD1468 SI-N 30V 1A 0.3..0.4W 150 | 2SD1491 N-DARL+D 70V 2A 10W B>2K2SD1496 SI-N 1500V 5A 50W | 2SD1497-02 SI-N 1500V 6A 50W2SD1504 SI-N 30V 0.5A 0.3W 300MHz | 2SD1506 SI-N 60V 3A 10W 90MHz2SD1508 N-DARL 30V 1.5A 10W B>400 | 2SD1509 N-DARL+D 80V 2A 10W 0.4uS2SD1511 N-DARL 100V 1A 1W 150MHz | 2SD1521 N-DARL+D 50V 1.5A 2W B>2K2SD1525 N-DARL+D 100V 30A 150W | 2SD1526 SI-N 130V 1A 1W 200MHz2SD1541 SI-N 1500V 3A 50W | 2SD155 SI-N 80V 3A 25W2SD1554 SI-N+D 1500V 3.5A 40W 1us | 2SD1555 SI-N+D 1500V 5A 40W 1us2SD1556 SI-N+D 1500V 6A 50W 1us | 2SD1563A SI-N 160V 1.5A 10W 80MHz2SD1565 N-DARL+D 100V 5A 30W | 2SD1576 SI-N 1500V 2.5A 48W2SD1577 SI-N 1500V 5A 80W | 2SD1579 N-DARL+D 150V 1.5A 1W2SD1589 N-DARL+D 100V 5A 20W | 2SD1590 N-DARL+D 150V 8A 25W2SD1595 N-DARL+D 60V 5A 20W B=6K | 2SD1609 SI-N 160V 0.1A NF/S-L2SD1610 SI-N 200V 0.1A 1.3W 140MHz | 2SD1624 SI-N 60V 3A .5W 150MHz2SD1632 N-DARL+D 1500V 4A 80W | 2SD1647 N-DARL+D 50V 2A 25W2SD1649 SI-N+D 1500/800V 2,5A 50W | 2SD1650 SI-N+D 1500/800V 3.5A 50W2SD1651 SI-N+D 1500/800V 5A 60W | 2SD1652 SI-N+D 1500V 6A 60W 3MHz2SD1656 SI-N 1500V 6A 50W 3MHz | 2SD1663 SI-N 1500V 5A 80W 0.5us2SD1664 SI-N 40V 1A 0.5W 150MHz | 2SD1666 SI-N 60V 3A 20W2SD1667 SI-N 60V 5A 25W 30MHz | 2SD1668R SI-N 60V 7A 30W2SD1669 SI-N 60V 12A 30W | 2SD1677 SI-N 1500V 5A 100W 0.5us2SD1680 SI-N 330/200V 7A 70W | 2SD1681 SI-N 20V 1.2A 10W 150MHz2SD1683 SI-N 60V 4A 10W 150MHz | 2SD1684 SI-N 120V 1.2A 10W 150MHz2SD1706 SI-N 130/80V 15A 80W 20MHz | 2SD1707 SI-N 130/80V 20A 100W2SD1710 SI-N 1500/800V 5A 100W | 2SD1725 SI-N 120V 4A 20W 180MHz2SD1729 SI-N+D 1500/700V 3.5A 60W | 2SD1730 SI-N+D 1500/700V 5A 100W2SD1739 SI-N 1500/700V 6A 100W | 2SD1740 N-DARL 150V 5A 25W B=50002SD1758 SI-N 40V 2A 10W 100MHz | 2SD1760 SI-N 60V 3A 15W 90MHz2SD1761 SI-N 80V 3A 35W | 2SD1762 SI-N 60V 3A 25W 70MHz2SD1763A SI-N 120V 1.5A 20W 80MHz | 2SD1764 N-DARL+D 60V 2A 20W B>100 2SD1765 N-DARL+D 100V 2A 20W B>1K | 2SD1769 N-DARL+D 120V 6A 50W2SD1776 SI-N 80V 2A 25W 40MHz | 2SD1783 N-DARL+D 60V 5A 30W B=2K 2SD1785 N-DARL+D 120V 6A 30W 100MHz | 2SD1790 N-DARL+D 200V 4A 25W B=1K2SD1791 N-DARL 100V 7A 30W 50MHz | 2SD1796 N-DARL+D 60V 4A 25W2SD1802 SI-N 60V 3A 15W 150MHz | 2SD1806 SI-N+D 40V 2A 15W 150MHz2SD1809 N-DARL 60V 1A 0.9W B>2K | 2SD1812 SI-N 160V 1.5A 0.9W2SD1815 SI-N 120V 3A 20W 180MHz | 2SD1817 SI-D 80V 3A 15W B>2K2SD1825 N-DARL+D 70V 4A 20W | 2SD1827 N-DARL+D 70V 10A 30W 20MHz2SD1830 N-DARL+D 110V 8A 30W B=4K | 2SD1835 SI-N 60V 2A 150MHz 60/580 2SD1843 N-DARL+D 60V 1A 1W B>2000 | 2SD1847 SI-N+D 1500/700V 5A 100W 2SD1849 SI-N+D 1500/700V 7A 120W | 2SD1853 N-DARL+D 80V 1.5A 0.7W B> 2SD1856 N-DARL+D 60V 5A 25W | 2SD1857 SI-N 120V 1.5A 1W 80MHz2SD1858 SI-N 40V 1A 1W 150MHz | 2SD1859 SI-N 80V 0.7A 1W 120MHz2SD1862 SI-N 40V 2A 1W 100MHz | 2SD1863 SI-N 120V 1A 1W 100MHz2SD1864 SI-N 60V 3A 1W 90MHz | 2SD1877 SI-N+D 1500/800V 4A 50W2SD1878 SI-N+D 1500V 5A 60W 0.3us | 2SD1880 SI-N+D 1500V 8A 70W2SD1881 SI-N+D 1500V 10A 70W | 2SD1887 SI-N 1500/800V 10A 70W2SD1894 SI-N 160V 7A 70W 20MHz | 2SD1895 N-DARL 160V 8A 100W 20MHz2SD1913 SI-N 60V 3A 20W 100MHz | 2SD1929 N-DARL+D 60V 2A 1.2W2SD1930 N-DARL 100V 2A 1.2W B=500 | 2SD1933 N-DARL+D 80V 4A 30W2SD1944 SI-N 80V 3A 30W 50MHz | 2SD1958 SI-N 200V 4.5A 30W 10MHz2SD1959 SI-N 1400V 10A 50W | 2SD1978 N-DARL+D 120V 1.5A 0.9W2SD198 SI-N 300V 1A 25W 45MHz | 2SD1991 SI-N 60V 0.1A 0.4W 150MHz2SD1992 SI-N 30V 0.5A 0.6W 200MHz | 2SD1994 SI-N 60V 1A 1W 200MHz2SD1996 SI-N 25V 0.5A 0.6W 200MHz | 2SD200 SI-N 1500V 2.5A 10W2SD2006 SI-N 80V 0.7A 1.2W 120MHz | 2SD2007 SI-N 40V 2A 1.2W 100MHz2SD2010 N-DARL 60V 2A 1.2W B>1000 | 2SD2012 SI-N 60V 3A 25W 3MHz2SD2018 N-DARL+D 60V 1A 5W B>6K5 | 2SD2052 SI-N 150V 9A 100W 20MHz 2SD2061 SI-N 80V 3A 30W 8MHz | 2SD2066 SI-N 160V 12A 120W2SD2088 N-DARL+D 60V 2A 0.9W B>2K | 2SD2125 SI-N+D 1500V 5A 50W 0.2us 2SD213 SI-N 110V 10A 100W | 2SD2136 SI-N 60V 3A 1.5W 30MHz2SD2137A SI-N 80V 3A 15W 30MHz | 2SD2141 N-DARL+D 380V 6A 35W B>15 2SD2144 SI-N 25V 0.5A B>560 | 2SD2151 SI-N 130/80V 10A 30W 20MHz2SD2159 SI-N 30V 2A 1W 110MHz | 2SD2250 N-DARL 160V 7A 90W B>5K2SD2253 SI-N+D 1700V 6A 50W | 2SD2255 N-DARL 160V 7A 70W 20MHz2SD2276 N-DARL 160V 8A 120W B>5K | 2SD2331 N-DARL+D 1500V 3A2SD234 SI-N 60V 3A 25W AF-POWER | 2SD2340 SI-N 130V 6A 50W2SD2375 SI-N 80V 3A 25W B>500 | 2SD2386 N-DARL 140V 7A 70W B>5K2SD2389 N-DARL 160V 10A 100W B>5K | 2SD2390 N-DARL 160V 10A 100W 55MHz2SD2394 SI-N 60V 3A 30W | 2SD2395 SI-N 50V 3A 25W2SD2399 N-DARL+D 80V 4A 30W B=1K- | 2SD2438 N-DARL+D 160V 8A 70W B>5K2SD2493 N-DARL 110V 6A 60W 60MHz | 2SD2498 SI-N 1500V 6A 50W2SD2499 SI-N+D 1500V 6A 50W | 2SD287 SI-N 200V 10A 100W 8MHz2SD313 SI-N 60V 3A 30W 8MHz | 2SD325 SI-N 35V 1.5A 10W 8MHz2SD350 SI-N 1500V 5A 22W | 2SD350A SI-N 1500V 5A 22W2SD359 SI-N 40V 2A 10W LOWFREQPO | 2SD361 SI-N 60V 1.5A 10W 70MHz2SD381 SI-N 130V 1.5A 20W 60MHz | 2SD382 SI-N 130V 1.5A 20W 60MHz2SD386 SI-N 200V 3A 25W 8MHz | 2SD400 SI-N 25V 1A 0.9W2SD401 SI-N 200V 2A 20W 10MHz | 2SD414 SI-N 120/80V 0.8A 10W2SD415 SI-N 120/100V 0.8A 10W | 2SD424 SI-N 160V 15A 150W POWER2SD438 SI-N 100V 0.7A 0.9W 100MHz | 2SD467 SI-N 25V 0.7A 0.5W 280MHz2SD468 SI-N 25V 1A 0,9W 280MHz | 2SD471 SI-N 30V 1A 0.8W UNI (EBC2SD476 SI-N 70V 4A 40W 7MHz | 2SD478 SI-N 200V 2A 30W2SD545 SI-N 25V 1.5A 0.5W | 2SD549 N-DARL 30V 1.5A 15W B>4K2SD552 SI-N 220V 15A 150W 4MHz | 2SD553 SI-N 70V 7A 40W 10MHz2SD555 SI-N 400V 15A 200W 7MHz | 2SD556 SI-N 120V 15A 120W 8MHz2SD560 N-DARL 100V 5A 30W | 2SD571 SI-N 60V 700mA 1W 110MHz2SD592 SI-N 30V 1A 0.75W 200MHz | 2SD596 SI-N 30V 0.7A 170MHz2SD600K SI-N 120V 1A 8W | 2SD602A SI-N 60V 0.5A 0.2W 200MHz2SD612 SI-N 25V 2A 10W 100MHz | 2SD613 SI-N 100V 6A 40W 15MHz2SD617 N-DARL 120V 8A 100W | 2SD637 SI-N 60V 0.1A 0.4W 150MHz2SD661 SI-N 35V 0.1A 0.4W 200MHz | 2SD662 SI-N 250V 0.1A 0.6W 50MHz2SD666 SI-N 120V 0.05A 140MHz | 2SD667 SI-N 120V 1A 140MHz2SD669A SI-N 160V 1.5A 1W 140MHz | 2SD676 SI-N 160V 12A 125W 8MHz2SD712 SI-N 100V 4A 30W 8MHz | 2SD717 SI-N 70V 10A 80W 0.3us2SD718 SI-N 120V 8A 80W 12MHz | 2SD725 SI-N 1500V 6A 50W POWER2SD726 SI-N 100V 4A 40W 10MHz | 2SD731 SI-N 170V 7A 80W 7MHz2SD732 SI-N 150V 8A 80W 15MHz | 2SD734 SI-N 25V 0.7A 0.6W 250MHz2SD762 SI-N 60V 3A 25W 25kHz | 2SD763 SI-N 120V 1A 0.9W2SD768 N-DARL+D 120V 6A 40W B>1K | 2SD773 SI-N 20V 2A 1W 110MHz2SD774 SI-N 100V 1A 1W 95MHz | 2SD781 SI-N 150V 2A 1W 0.6us2SD786 SI-N 40V 0.3A 0.25W | 2SD787 SI-N 20V 2A 0.9W 80MHz2SD788 SI-N 20/20V 2A 0.9W 100MHz | 2SD789 SI-N 100/50V 1A 0.9W 80MHz2SD794 SI-N 70V 3A 10W 60MHz | 2SD795 SI-N 40V 3A 20W 95MHz2SD798 N-DARL 600V 6A 30W B>1K5 | 2SD799 N-DARL+D 400V 6A 30W2SD800 SI-N 750V 4A 30W 8MHz | 2SD809 SI-N 100V 1A 10W 85MHz2SD819 SI-N 1500V 3.5A 50W | 2SD820 SI-N 1500V 5A 50W2SD822 SI-N 1500/600V 7A 50W | 2SD826 SI-N 60V 5A 10W 120MHz2SD829 N-DARL+D 150V 15A 100W B= | 2SD837 N-DARL 60V 4A 40W2SD844 SI-N 50V 7A 60W 15MHz | 2SD850 SI-N 1500V 3A 25W2SD856 SI-N 60V 3A 35W POWER | 2SD863 SI-N 50V 1A 0.9W2SD864K N-DARL+D 120V 3A 30W | 2SD867 SI-N 130V 10A 100W 3MHz2SD871 SI-N+D 1500V 5A 50W | 2SD879 SI-N 30V 3A 0.75W 200MHz2SD880 SI-N 60V 3A 30W 0.8us | 2SD882 SI-N 30V 3A 10W2SD889 SI-N+D 1500V 4A 50W | 2SD892A N-DARL 60V 0.5A 0.4W B>2K2SD894 N-DARL 30V 1.5A 10W 120MHz | 2SD895 SI-N 100V 6A 60W 10MHz2SD917 SI-N 330V 7A 70W POWER | 2SD92 SI-N 100V 3A 20W2SD921 N-DARL 200V 5A 80W B>700 | 2SD946 N-DARL 30V 1A2SD947 N-DARL 40V 2A 5W 150MHz | 2SD951 SI-N 1500V 3A 65W2SD958 SI-N 120V 0.02A 0.4W 200MHz | 2SD965 SI-N 40V 5A 0.75W 150MHz2SD966 SI-N 40V 5A 1W 150MHz | 2SD968A SI-N 120V 0.5A 1W 120MHz2SD970 N-DARL+D 120V 8A 40W B>1K | 2SD972 N-DARL 50V 4A 30W B=3K 2SD982 N-DARL 200V 5A 40W B=3000 | 2SD986 N-DARL 150/80V 1.5A 10W2SD998 N-DARL 100V 1.5A 10W B=7K深圳市同成源科技有限公司发布人：admin 发布时间：2007年06月26日20时08分常用彩电行管电源管主要参数73种常用彩电行管电源管主要参数73种型号反压(V) 电流(A) 功率(W) β值阻尼型号反压(V) 电流(A) 功率(W) β值阻尼D1175 1500 5 100 15 有D2498 1500 6 50 无D1279 1500 10 50 20 无D2499 1500 6 50 有D1391 1500 5 80 12 有D2500 1500 10 50 无D1398 1500 5 50 12 有D2253FA 1700 6 50 20 有D1403 1500 6 120 20 无C2027 1500 5 50 15 有D1426 1500 3.5 80 有C3461 1100 8 120 12 无D1427 1500 5 80 有C3552 1100 12 150 20 无D1428 1500 6 80 12 有C3688 1500 10 150 20 无D1429 1500 2.5 80 20 有C3886 1400 8 50 15 无D1431 1500 5 80 无C3997 1500 15 250 15 无D1432 1500 6 80 20 有C3998 1500 25 250 无D1433 1500 7 80 20 有C4111 1200 10 150 20 无D1439 1500 3 50 有C4119 1500 15 250 20 无D1453 1500 3 50 无C4288 1400 12 200 15 无D1497 1500 6 50 15 有C4429 1100 8 60 无D1545 1500 5 50 20 无C4706 900 14 130 20 无D1547 1500 7 50 20 无C4745 1500 6 50 12 无D1554 1500 3.5 40 有C4770 1500 7 60 15 无D1555 1500 5 50 有C4927 1500 8 50 有D1556 1500 6 50 12 有C5132 1500 6 50 无D1651 1500 5 60 有C5132A 1500 8 50 有D1652 1500 6 60 15 有C5207A 1500 10 50 无D1710 1500 6 100 20 无C5250 1500 8 50 有D1878 1500 6 50 15 有C5453 1500 25 250 无D1879 1500 6 60 15 有BU2508AF 1500 8 45 12 无D1880 1500 8 70 有BU2508DF 1500 8 125 12 有D1881 1500 10 70 有BU2520AF 1500 10 45 15 无D1884 1500 5 60 无BU2520AX 1500 10 45 15 无D1885 1500 6 60 无BU2520DF 1500 10 125 15 有D1887 1500 10 70 12 无BU2522AF 1500 10 80 20 无D1910 1500 3 40 20 有BU2522DF 1500 10 80 20 有D1959 1400 10 50 20 无BU2525AF 1500 12 80 20 无D2125 1500 5 50 12 有BU2525DF 1500 12 125 20 有D2251 1500 7 60 有BUX48C 1200 15 175 20 无D2252 1500 7 60 无BUW13F 1000 15 175 20 无D2253 1700 6 50 有D2334 1500 5 80 15 无D2335 1500 7 100 15 无深圳市同成源科技有限公司发布人：admin 发布时间：2007年06月26日20时06分2SA系列三极管参数2SA系列三极管参数2SA1006B SI-P 250V 1.5A 25W 80MHz2SA1009 SI-P 350V 2A 15W |2SA1011 SI-P 160V 1.5A 25W 120MHz2SA1015 SI-P 50V 0.15A 0.4W 80MHz2SA1016 SI-P 100V 0.05A 0.4W 110MHz | 2SA1017 SI-P 120V 50mA 0.5W 110MHz2SA1018 SI-P 250V 70mA 0.75W >50MHz | 2SA1020 SI-P 50V 2A 0.9W 100MHz2SA1027 SI-P 50V 0.2A 0.25W 100MHz |2SA1029 SI-P 30V 0.1A 0.2W 280MHz2SA1034 SI-P 35V 50mA 0.2W 200MHz | 2SA1037 SI-P 50V 0.4A 140MHz FR2SA1048 SI-P 50V 0.15A 0.2W 80MHz |2SA1049 SI-P 120V 0.1A 0.2W 100MHz2SA1061 SI-P 100V 6A 70W 15MHz |2SA1062 SI-N 120V 7A 80W 15MHz2SA1065 SI-P 150V 10A 120W 50MHz |2SA1084 SI-P 90V 0.1A 0.4W 90MHz2SA1103 SI-P 100V 7A 70W 20MHz |2SA1106 SI-P 140V 10A 100W 20MHz2SA1110 SI-P 120V 0.5A 5W 250MHz |2SA1111 SI-P 150V 1A 20W 200MHz2SA1112 SI-P 180V 1A 20W 200MHz |2SA1115 SI-P 50V 0.2A 200MHz UNI2SA1120 SI-P 35V 5A 170MHz |2SA1123 SI-P 150V 50mA 0.75W 200MHz2SA1124 SI-P 150V 50mA 1W 200MHz | 2SA1127 SI-P 60V 0.1A 0.4W 200MHz2SA1141 SI-P 115V 10A 100W 90MHz |2SA1142 SI-P 180V 0.1A 8W 180MHz2SA1145 SI-P 150V 50mA 0.8W 200MHz | 2SA1150 SI-P 35V 0.8A 0.3W 120MHz2SA1156 SI-P 400V 0.5A 10W POWER | 2SA1160 SI-P 20V 2A 0.9W 150MHz2SA1163 SI-P 120V 0.1A 100MHz |2SA1170 SI-P 200V 17A 200W 20MHz2SA1185 SI-P 50V 7A 60W 100MHz |2SA1186 SI-P 150V 10A 100W2SA1200 SI-P 150V 50mA 0.5W 120MHz | 2SA1201 SI-P 120V 0.8A 0.5W 120MHz2SA1206 SI-P 15V 0.05A 0.6W |2SA1207 SI-P 180V 70mA 0.6W 150MHz2SA1208 SI-P 180V 0.07A 0.9W |2SA1209 SI-P 180V 0.14A 10W2SA1210 SI-P 200V 0.14A 10W |2SA1213 SI-P 50V 2A 0.5W 120MHz2SA1216 SI-P 180V 17A 200W 40MHz2SA1220A SI-P 120V 1.2A 20W 160MHz | 2SA1221 SI-P 160V 0.5A 1W 45MHz2SA1225 SI-P 160V 1.5A 15W 100MHz | 2SA1227A SI-P 140V 12A 120W 60MHz2SA1232 SI-P 130V 10A 100W 60MHz | 2SA1241 SI-P 50V 2A 10W 100MHz2SA1242 SI-P 35V 5A 1W 170MHz | 2SA1244 SI-P 60V 5A 20W 60MHz2SA1249 SI-P 180V 1.5A 10W 120MHz | 2SA1261 SI-P 100V 10A 60W POWER2SA1262 SI-P 60V 4A 30W 15MHz | 2SA1264N SI-P 120V 8A 80W 30MHz2SA1265N SI-P 140V 10A 100W 30MHz | 2SA1266 SI-P 50V 0.15A 0.4W POWER2SA1268 SI-N 120V 0.1A 0.3W 100MHz | 2SA1270 SI-P 35V 0.5A 0.5W 200MHz2SA1271 SI-P 30V 0.8A 0.6W 120MHz | 2SA1275 SI-P 160V 1A 0.9W 20MHz2SA1282 SI-P 20V 2A 0.9W 80MHz |2SA1283 SI-P 60V 1A 0.9W 85MHz2SA1286 SI-P 30V 1.5A 0.9W 90MHz | 2SA1287 SI-P 50V 1A 0.9W 90MHz2SA1292 SI-P 80V 15A 70W 100MHz | 2SA1293 SI-P 100V 5A 30W 0.2us2SA1294 SI-P 230V 15A 130W |2SA1295 SI-P 230V 17A 200W 35MHz2SA1296 SI-P 20V 2A 0.75W 120MHz | 2SA1298 SI-P 30V 0.8A 0.2W 120MHz2SA1300 SI-P 10V 2A 0.75W 140MHz | 2SA1302 SI-P 200V 15A 150W 25MHz2SA1303 SI-P 150V 14A 125W 50MHz | 2SA1306 SI-P 160V 1.5A 20W2SA1306A SI-P 180V 1.5A 20W 100MHz | 2SA1307 SI-P 60V 5A 20W 0.1us2SA1309 SI-P 30V 0.1A 0.3W 80MHz | 2SA1310 SI-P 60V 0.1A 0.3W 200MHz2SA1315 SI-P 80V 2A 0.9W 0.2us |2SA1316 SI-P 80V 0.1A 0.4W 50MHz2SA1317 SI-P 60V 0.2A 0.3W 200MHz | 2SA1318 SI-P 60V 0.2A 0.5W 200MHz2SA1319 SI-P 180V 0.7A 0.7W 120MHz | 2SA1321 SI-P 250V 50mA 0.9W 100MHz2SA1329 SI-P 80V 12A 40W 0.3us2SA1345 SI-N 50V 0.1A 0.3W 250MHz | 2SA1346 SI-P 50V 0.1A 200MHz2SA1348 SI-P 50V 0.1A 200MHz |2SA1349 P-ARRAY 80V 0.1A 0.4W 1702SA1352 SI-P 200V 0.1A 5W 70MHz | 2SA1357 SI-P 35V 5A 10W 170MHz2SA1358 SI-P 120V 1A 10W 120MHz | 2SA1359 SI-P 40V 3A 10W 100MHz2SA1360 SI-P 150V 50mA 5W 200MHz | 2SA1361 SI-P 250V 50mA 80MHz2SA1370 SI-P 200V 0.1A 1W 150MHz | 2SA1371E SI-P 300V 0.1A 1W 150MHz2SA1376 SI-P 200V 0.1A 0.75W 120MHz | 2SA1380 SI-P 200V 0.1A 1.2W2SA1381 SI-P 300V 0.1A 150MHz |2SA1382 SI-P 120V 2A 0.9W 0.2us2SA1383 SI-P 180V 0.1A 10W 180MHz | 2SA1386 SI-P 160V 15A 130W 40MHz2SA1387 SI-P 60V 5A 25W 80MHz | 2SA1392 SI-P 60V 0.2A 0.4W 200MHz2SA1396 SI-P 100V 10A 30W |2SA1399 SI-P 55V 0.4A 0.9W 150MHz2SA1400 SI-P 400V 0.5A 10W |2SA1403 SI-P 80V 0.5A 10W 800MHz2SA1405 SI-P 120V 0.3A 8W 500MHz | 2SA1406 SI-P 200V 0.1A 7W 400MHz2SA1407 SI-P 150V 0.1A 7W 400MHz | 2SA1413 SI-P 600V 1A 10W 26MHz2SA1428 SI-P 50V 2A 1W 100MHz | 2SA1431 SI-P 35V 5A 1W 170MHz2SA1441 SI-P 100V 5A 25W <300ns |2SA1443 SI-P 100V 10A 30W2SA1450 SI-P 100V 0.5A 0.6W 120MHz | 2SA1451 SI-P 60V 12A 30W 70MHz2SA1460 SI-P 60V 1A 1W <40NS |2SA1470 SI-P 80V 7A 25W 100MHz2SA1475 SI-P 120V 0.4A 15W 500MHz | 2SA1476 SI-P 200V 0.2A 15W 400MHz2SA1477 SI-P 180V 0.14A 10W 150MHz | 2SA1488 SI-P 60V 4A 25W 15MHz2SA1489 SI-P 80V 6A 60W 20MHz | 2SA1490 SI-P 120V 8A 80W 20MHz2SA1494 SI-P 200V 17A 200W 20MHz2SA1507 SI-P 180V 1.5A 10W 120MHz |2SA1515 SI-P 40V 1A 0.3W 150MHz2SA1516 SI-P 180V 12A 130W 25MHz |2SA1519 SI-P 50V 0.5A 0.3W 200MHz2SA1535A SI-P 180V 1A 40W 200MHz |2SA1538 SI-P 120V 0.2A 8W 400MHz2SA1539 SI-P 120V 0.3A 8W 400MHz |2SA1540 SI-P 200V 0.1A 7W 300MHz2SA1541 SI-P 200V 0.2A 7W 300MHz |2SA1553 SI-P 230V 15A 150W 25MHz2SA1566 SI-N 120V 0.1A 0.15W 130MHz |2SA1567 SI-P 50V 12A 35W 40MHz2SA1568 SI-P 60V 12A 40W | 2SA1577 SI-P 32V 0.5A 0.2W 200MHz2SA1593 SI-P 120V 2A 15W 120MHz |2SA1601 SI-P 60V 15A 45W2SA1606 SI-P 180V 1.5A 15W 100MHz | 2SA1615 SI-P 30V 10A 15W 180MHz 2SA1624 SI-P 300V 0.1A 0.5W 70MHz | 2SA1625 SI-P 400V 0.5A 0.75W2SA1626 SI-P 400V 2A 1W 0.5/2.7us |2SA1633 SI-P 150V 10A 100W 20MHz2SA1643 SI-P 50V 7A 25W 75MHz |2SA1667 SI-P 150V 2A 25W 20MHz2SA1668 SI-P 200V 2A 25W 20MHz |2SA1670 SI-P 80V 6A 60W 20MHz2SA1671 SI-P 120/120V 8A 75W 20MHz |2SA1672 SI-P 140V 10A 80W 20MHz2SA1673 SI-P 180V 15A 85W 20MHz |2SA1680 SI-P 60V 2A 0.9W 100/400ns2SA1684 SI-P 120V 1.5A 20W 150MHz |2SA1694 SI-P 120/120V 8A 80W 20MHz2SA1695 SI-P 140V 10A 80W 20MHz |2SA1703 SI-P 30V 1.5A 1W 180MHz2SA1706 SI-P 60V 2A 1W |2SA1708 SI-P 120V 1A 1W 120MHz2SA1726 SI-P 80V 6A 50W 20MHz |2SA1776 SI-P 400V 1A 1W2SA1803 SI-P 80V 6A 55W 30MHz |2SA1837 SI-P 230V 1A 20W 70MHz2SA1930 SI-P 180V 2A 20W 200MHz |2SA1962 SI-P 230V 15A 130W 25MHz2SA329 GE-P 15V 10mA 0.05W |2SA467 SI-P 40V 0,4A 0,3W2SA473 SI-P 30V 3A 10W 100MHz |2SA483 SI-P 150V 1A 20W 9MHz2SA493 SI-P 50V 0.05A 0.2W 80MHz | 2SA495 SI-P 35V 0.1A 0.2W 200MHz2SA562 SI-P 30V 0.5A 0.5W 200MHz | 2SA566 SI-P 100V 0.7A 10W 100MHz2SA608 SI-N 40V 0.1A 0.1W 180MHz | 2SA614 SI-P 80V 1A 15W 30MHz2SA620 SI-P 30V 0.05A 0.2W 120MHz | 2SA626 SI-P 80V 5A 60W 15MHz2SA628 SI-P 30V 0.1A 100MHz |2SA639 SI-P 180V 50mA 0,25W2SA642 SI-P 30V 0.2A 0.25W 200MHz | 2SA643 SI-P 40V 0.5A 0.5W 180MHz2SA653 SI-P 150V 1A 15W 5MHz | 2SA684 SI-P 60V 1A 1W 200MHz2SA699 SI-P 40V 2A 10W 150MHz | 2SA708A SI-P 100V 0.7A 0.8W 50MHz2SA720 SI-P 60V 0.5A 0.6W 200MHz | 2SA725 SI-P 35V 0.1A 0.15W 100MHz2SA733 SI-P 60V 0.15A 0.25W 50MHz | 2SA738 SI-P 25V 1.5A 8W 160MHz2SA747 SI-P 120V 10A 100W 15MHz | 2SA756 SI-P 100V 6A 50W 20MHz2SA762 SI-P 110V 2A 23W 80MHz | 2SA765 SI-P 80V 6A 40W 10MHz2SA768 SI-P 60V 4A 30W 10MHz | 2SA769 SI-P 80V 4A 30W 10MHz2SA770 SI-P 60V 6A 40W 10MHz | 2SA771 SI-P 80V 6A 40W 2MHz2SA777 SI-P 80V 0.5A 0.75W 120MHz | 2SA778A SI-P 180V 0.05A 0.2W 60MHz 2SA781 SI-P 20V 0.2A 0.2W <80/16 |2SA794 SI-P 100V 0.5A 5W 120MHz2SA794A SI-P 120V 0.5A 5W 120MHz | 2SA812 SI-P 50V 0.1A 0.15W2SA814 SI-P 120V 1A 15W 30MHz | 2SA816 SI-P 80V 0.75A 1.5W 100MHz2SA817 SI-P 80V 0.3A 0.6W 100MHz | 2SA817A SI-P 80V 0.4A 0.8W 100MHz2SA836 SI-P 55V 0.1A 0.2W 100MHz | 2SA838 SI-P 30V 30mA 0.25W 300MHz 2SA839 SI-P 150V 1.5A 25W 6MHz |2SA841 SI-P 60V 0.05A 0.2W 140MHz。
