UNISONIC TECHNOLOGIES CO., LTD2SD882NPN SILICON TRANSISTORMEDIUM POWER LOWVOLTAGE TRANSISTORFEATURES* High current output up to 3A * Low saturation voltage * Complement to 2SB772APPLICATIONS* Audio power amplifier * DC-DC convertor * Voltage regulator*Pb-free plating product number: 2SD882LORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 Packing2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B BulkABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )PARAMETER SYMBOL RATINGSUNITCollector-Base Voltage V CBO 40 VCollector-Emitter Voltage V CEO 30 VEmitter-Base Voltage V EBO 5 VDC I C 3 ACollector CurrentPulse I CP 7 ABase Current I B 0.6 ATO-92NL 0.5WCollector Dissipation Ta=25 TO-251/TO-252/TO-126/TO-126C P C1 WJunction Temperature T J +150Storage Temperature T STG-55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAXUNITCollector-Base Breakdown Voltage BV CBO I C=100µA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100µA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=01000nA Emitter Cut-off Current I EBO V EB=3V, I C=01000nAh FE1V CE=2V, I C=20mA 30200DC Current Gain (Note 1)h FE2V CE=2V, I C=1A 100150400Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A0.30.5V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A1.02.0V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A80MHzOutput Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pFNote 1: Pulse test: PW<300µs, Duty Cycle<2%CLASSIFICATION OF h FE2RANK Q P ERANGE 100-200 160-320 200-400TYPICAL CHARACTERISTICSStatic CharacteristicsCollector -Emitter voltage (V)C o l l e c t o r C u r r e n t , I c (A )00.40.81.21.6Case Temperature , T C (℃)Derating Curve of Safe Operating20015010050-50Current Gain-Bandwidth P roductC u r r e n t G a i n -B a n dw i d t h P r o d u c t , F T (M H z )Collector-Emitter VoltageSafe Operating AreaCollector Current, Ic (A)10310210110010-210-1100101100101102DC Current GainCollector Current, I C (mA)Collector Current, I C (mA)Saturation VoltageD C C u r r e n t G a i n , h F E10101010101010101010101010TYPICAL CHARACTERISTICS(Cont.)Collector Output CapacitanceCollector-Base Voltage (V)O u t p u t C ap a c i t a n c e (p F )10010310210110010-110-210-3。
October 2007Rev 31/82SD882NPN medium power transistorFeatures■High current■Low saturation voltage ■Complement to 2SB772Applications■Voltage regulation ■Relay driver ■Generic switch ■Audio power amplifier ■DC-DC converterDescriptionThe device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.Table 1.Device summaryOrder code Marking Package Packing 2SD882D882SOT -32T ubeAbsolute maximum ratings2SD882 1 Absolute maximum ratingsTable 2.Absolute maximum ratingSymbol Parameter Value UnitV CBO Collector-base voltage (I E = 0) 60VV CEO Collector-emitter voltage (I B = 0) 30VV EBO Collector-base voltage (I C = 0) 5VI C Collector current3AI CM Collector peak current (t P < 5ms)6AI B Base current1AI BM Base peak current (t P < 5ms)2AP TOT T otal dissipation at T c = 25°C12.5WT STG Storage temperature-65 to 150°CT J Max. operating junction temperature150°CTable 3.Thermal dataSymbol Parameter Value UnitR thJ-case Thermal resistance junction-case max10°C/W 2/83/82 Electrical characteristics(T CASE = 25°C; unless otherwise specified)Table 4.Electrical characteristicsSymbol ParameterTest conditions Min.Typ.Max.Unit I CES Collector cut-off current(V BE = 0)V CE = 60 V 10µA I CEO Collector cut-off current (I B = 0)V CE = 30 V 100µA I EBOEmitter cut-off current (I C = 0)V EB = 5 V10µAV (BR)CEO(1)Collector-emitter breakdownvoltage (I B = 0 )I C = 10 mA 30VV (BR)CBO Collector-base breakdownvoltage(I E = 0 )I C = 100 µA60VV (BR)EBO Emitter-base breakdownvoltage(I C = 0 )I E = 100 µA5V V CE(sat)(1)Collector-emitter saturationvoltageI C = 1 A I B = 50 mAI C = 2 A I B = 100 mAI C = 3 A I B = 150 mA 0.40.71.1V V V V BE(sat)(1)1.Pulsed duration = 300 ms, duty cycle ≤1.5%.Base-emitter saturation voltage I C = 2 A I B = 100 mA 1.2Vh FE DC current gain I C = 100 mA V CE = 2 V I C = 1 A V CE = 2 V I C = 3 A V CE = 2 V 1008030300f TTransition frequencyI C = 0.1 A V CE = 10 V100MHzcharacteristics (curves) 2.1 Typical4/82SD882Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 5/8Package mechanical data2SD8826/82SD882Revision history7/84 Revision historyTable 5.Document revision historyDate RevisionChanges09-Sep-20052Final datasheet. New template 02-Oct-20073Updated mechanical data2SD8828/8Please Read Carefully:Information in this document is provided solely in connection with ST products. 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