74V2G14中文资料

TOSHIBA CMOS Digital Integrated Circuit Silicon MonolithicTC74VHC14F,TC74VHC14FN,TC74VHC14FT,TC74VHC14FKHex Schmitt InverterThe TC74VHC14 is an advanced high speed CMOS SCHMITT INVERTER fabricated with silicon gate C 2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.Pin configuration and function are the same as theTC74VHC04 but the inputs have hysteresis and with its schmitt trigger function, the TC74VHC14 can be used as a line receivers which will receive slow input signals.An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.Features• High speed: t pd = 5.5 ns (typ.) at V CC = 5 V• Low power dissipation: I CC = 2 μA (max) at Ta = 25°C • Power down protection is provided on all inputs. • Balanced propagation delays: t pLH ∼ − t pHL • Wide operating voltage range: V CC (opr) = 2 V to 5.5 V • Low noise: V OLP = 0.8 V (max)• Pin and function compatible with 74ALS14WeightSOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27: 0.12 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) VSSOP14-P-0030-0.50: 0.02 g (typ.)Note: xxxFN (JEDEC SOP) is not available inJapan. TC74VHC14FTC74VHC14FNTC74VHC14FTTC74VHC14FKPin AssignmentIEC Logic SymbolTruth TableA Y L H H LSystem Diagram, WaveformAbsolute Maximum Ratings (Note)Characteristics SymbolRating Unit Supply voltage range V CC −0.5 to 7.0 V DC input voltage V IN −0.5 to 7.0 V DC output voltage V OUT −0.5 to V CC + 0.5VInput diode current I IK−20 mAOutput diode current I OK ±20 mA DC output current I OUT ±25 mA DC V CC /ground current I CC ±50 mA Power dissipation P D 180 mW Storage temperatureT stg−65 to 150°CNote:Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance oreven destruction.Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).1A2A 3A 4A5A6A(1)(3)(5)(9)(11)(13)1Y 2Y 3Y4Y 5Y 6Y(2) (4) (6) (8)(10)(12)V CC 9 6A 6Y 5A 814 13 12 11 10 1A 2Y 3A 3Y GND5Y 4A 4Y(top view)1Y 2A NY PAV IN (A)V OUT (Y)Operating Ranges (Note)Characteristics Symbol Rating Unit Supply voltage V CC 2.0 to 5.5 VInput voltage V IN0 to 5.5VOutput voltage V OUT0 to V CC VOperating temperature T opr−40 to 85 °CNote: The operating ranges must be maintained to ensure the normal operation of the device.Unused inputs must be tied to either VCC or GND.Electrical CharacteristicsDC CharacteristicsTest Condition Ta = 25°CTa =−40 to 85°CCharacteristics SymbolV CC (V)Min Typ.Max Min MaxUnitPositive threshold voltage V P―3.04.55.5――――――2.203.153.85―――2.203.153.85VNegative threshold voltage V N―3.04.55.50.901.351.65――――――0.901.351.65―――VHysteresis voltage V H―3.04.55.50.300.400.50―――1.201.401.600.300.400.501.201.401.60VI OH = −50 μA 2.03.04.51.92.94.42.03.04.5―――1.92.94.4―――High-level output voltage V OHV IN= V ILI OH = −4 mAI OH = −8 mA3.04.52.583.94――――2.483.80――VI OL = 50 μA2.03.04.5―――0.00.00.00.10.10.1―――0.10.10.1Low-level output voltage V OLV IN= V IHI OL = 4 mAI OL = 8 mA3.04.5――――0.360.36――0.440.44VInput leakage current I IN V IN = 5.5 V or GND0 to5.5―― ±0.1 ― ±1.0μAQuiescent supplycurrentI CC V IN = V CC or GND 5.5―― 2.0 ― 20.0μAAC Characteristics (input: t r = t f = 3 ns)Test ConditionTa = 25°CTa = −40 to 85°CCharacteristics SymbolV CC (V)C L (pF)MinTyp.Max Min MaxUnit15 ― 8.3 12.8 1.0 15.03.3 ± 0.350― 10.816.3 1.0 18.515 ― 5.5 8.6 1.0 10.0Propagation delay timet pLH t pHL―5.0 ± 0.550― 7.0 10.6 1.0 12.0nsInput capacitance C IN―― 4 10 ― 10 pF Power dissipationcapacitanceC PD (Note)― 21 ―――pFNote: C PD is defined as the value of the internal equivalent capacitance which is calculated from the operatingcurrent consumption without load. Average operating current can be obtained by the equation:I CC (opr) = C PD ·V CC ·f IN + I CC /6 (per gate)Noise Characteristics (input: t r = t f = 3 ns)Test Condition Ta = 25°C Characteristics SymbolV CC (V) Typ. Limit UnitQuiet output maximum dynamic V OL V OLP C L = 50 pF 5.0 0.4 0.8 V Quiet output minimum dynamic V OL V OLV C L = 50 pF 5.0 −0.4−0.8V Minimum high level dynamic input voltageV IHD C L = 50 pF 5.0 ― 3.5 V Maximum low level dynamic input voltageV ILDC L = 50 pF5.0― 1.5 VInput Equivalent CircuitPackage DimensionsWeight: 0.18 g (typ.)Package Dimensions (Note)Note: This package is not available in Japan. Weight: 0.12 g (typ.)Weight: 0.06 g (typ.)Weight: 0.02 g (typ.)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

74AUP1G14Low-power Schmitt-trigger inverterRev. 01 — 20 July 2005Product data sheet1.General descriptionThe 74AUP1G14 is a high-performance, low-power, low-voltage, Si-gate CMOS device,superior to most advanced CMOS compatible TTL families.This device ensures a very low static and dynamic power consumption across the entireV CC range from 0.8 V to 3.6 V.This device is fully specified for partial Power-down applications using I OFF.The I OFF circuitry disables the output, preventing the damaging backflow current throughthe device when it is powered down.The74AUP1G14provides a single inverting Schmitt-trigger which accepts standard inputsignals. It is capable of transforming slowly changing input signals into sharply defined,jitter-free output signals.The inputs switch at different points for positive and negative-going signals.The differencebetween the positive voltage V(th)LH and the negative voltage V(th)HL is defined as the inputhysteresis voltage V hys.2.Featuress Wide supply voltage range from 0.8 V to3.6Vs High noise immunitys ESD protection:x HBM JESD22-A114-C exceeds 2000Vx MM JESD22-A115-A exceeds 200Vx CDM JESD22-C101-C exceeds 1000Vs Low static power consumption; I CC = 0.9µA (maximum)s Latch-up performance exceeds 100mA per JESD 78 Class IIs Inputs accept voltages up to 3.6Vs Low noise overshoot and undershoot < 10 % of V CCs I OFF circuitry provides partial Power-down mode operations Multiple package optionss Specified from−40°C to+85°C and−40°C to+125°C3.Applicationss Wave and pulse shapers Astable multivibrators Monostable multivibrator4.Quick reference data[1]C PD is used to determine the dynamic power dissipation (P D in µW).P D =C PD ×V CC 2×f i ×N +Σ(C L ×V CC 2×f o ) where:f i =input frequency in MHz;f o =output frequency in MHz;C L =output load capacitance in pF;V CC =supply voltage in V;N =number of inputs switching;Σ(C L ×V CC 2×f o )=sum of the outputs.[2]The condition is V I =GND to V CC .5.Ordering information6.MarkingTable 1:Quick reference data GND =0V; T amb =25°C; t r =t f ≤3ns.SymbolParameterConditionsMin Typ Max Unit t PHL , t PLH propagation delayA to YC L =5pF; R L =1M Ω;V CC =0.8V-20.3-ns C L =5pF; R L =1M Ω;V CC =1.1V to 1.3 V 3.0 5.911.7ns C L =5pF; R L =1M Ω;V CC =1.4V to 1.6 V 2.6 4.37.6ns C L =5pF; R L =1M Ω;V CC =1.65V to 1.95 V 2.2 3.7 6.2ns C L =5pF; R L =1M Ω;V CC =2.3V to 2.7 V 2.0 3.1 4.8ns C L =5pF; R L =1M Ω;V CC =3.0V to 3.6 V1.92.8 4.0ns C i input capacitance -0.8-pF C PDpower dissipation capacitanceV CC =1.8 V; f = 10 MHz [1][2]- 4.6-pF V CC =3.3 V; f = 10 MHz[1][2]-6.1-pFTable 2:Ordering informationType numberPackageTemperature range NameDescriptionVersion 74AUP1G14GW −40°C to +125°C TSSOP5plastic thin shrink small outline package; 5 leads;body width 1.25 mmSOT353-174AUP1G14GM−40°C to +125°CXSON6plastic extremely thin small outline package;no leads;6 terminals; body 1×1.45×0.5mmSOT886Table 3:MarkingType number Marking code 74AUP1G14GW pF 74AUP1G14GMpF7.Functional diagram8.Pinning information8.1Pinning8.2Pin descriptionFig 1.Logic symbol Fig 2.IEC logic symbolFig 3.Logic diagrammna023A Y2424mna024mna025A YFig 4.Pin configuration SOT353-1(TSSOP5)Fig 5.Pin configuration SOT886 (XSON6)14n.c.V CCA GNDY001aab6551235414A 001aab656n.c.GNDn.c.V CCYTransparent top view231546Table 4:Pin descriptionSymbol Pin DescriptionTSSOP5XSON6n.c.11not connected A 22data input A GND 33ground (0V)Y 44data output Y n.c.-5not connected V CC56supply voltage9.Functional description9.1Function table[1]H =HIGH voltage level;L =LOW voltage level.10.Limiting values[1]The input and output voltage ratings may be exceeded if the input and output current ratings are observed.[2]For TSSOP5 packages: above 87.5°C the value of P tot derates linearly with 4.0mW/K.For XSON6 packages: above 45°C the value of P tot derates linearly with 2.4mW/K.Table 5:Function table [1]Input Output A Y L H HLTable 6:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions Min Max Unit V CC supply voltage −0.5+4.6V I IK input clamping current V I <0V-−50mA V I input voltage [1]−0.5+4.6V I OK output clamping current V O >V CC or V O <0V -±50mAV O output voltage active mode [1]−0.5V CC +0.5V Power-down mode [1]−0.5+4.6V I O output current V O =0 V to V CC-±20mA I CC quiescent supply current -+50mA I GND ground current -−50mA T stg storage temperature −65+150°C P tottotal power dissipationT amb =−40°C to +125°C[2]-250mW11.Recommended operating conditions12.Static characteristicsTable 7:Recommended operating conditionsSymbol ParameterConditionsMin Max Unit V CC supply voltage 0.8 3.6V V I input voltage 03.6V V O output voltageactive mode0V CC V Power-down mode; V CC =0V0 3.6VT ambambient temperature−40+125°CTable 8:Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter Conditions Min Typ Max UnitT amb = 25°C V OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.1--V I O =−1.1 mA; V CC = 1.1 V 0.75× V CC --V I O =−1.7 mA; V CC = 1.4 V 1.11--V I O =−1.9 mA; V CC = 1.65 V 1.32--V I O =−2.3 mA; V CC = 2.3 V 2.05--V I O =−3.1 mA; V CC = 2.3 V 1.9--V I O =−2.7 mA; V CC = 3.0 V 2.72--V I O =−4.0 mA; V CC = 3.0 V2.6--V V OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.1V I O = 1.1 mA; V CC = 1.1 V --0.3× V CC V I O = 1.7 mA; V CC = 1.4 V --0.31V I O = 1.9 mA; V CC = 1.65 V --0.31V I O = 2.3 mA; V CC = 2.3 V --0.31V I O = 3.1 mA; V CC = 2.3 V --0.44V I O = 2.7 mA; V CC = 3.0 V --0.31V I O = 4.0 mA; V CC = 3.0 V--0.44V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.1µA I OFF power-off leakage currentV I or V O = 0 V to 3.6 V; V CC = 0 V--±0.2µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6 V;V CC =0V to 0.2V --±0.2µA I CC quiescent supply current V I = GND or V CC ; I O = 0A;V CC =0.8V to 3.6V --0.5µA ∆I CC additional quiescent supply currentV I = V CC − 0.6 V; I O = 0A;V CC =3.3V--40µA C i input capacitance V I = GND or V CC ; V CC = 0 V to 3.6 V -0.8-pF C ooutput capacitanceV O = GND; V CC = 0 V-1.7-pFT amb =−40°C to +85°C V OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.1--V I O =−1.1 mA; V CC = 1.1 V 0.7× V CC --V I O =−1.7 mA; V CC = 1.4 V 1.03--V I O =−1.9 mA; V CC = 1.65 V 1.30--V I O =−2.3 mA; V CC = 2.3 V 1.97--V I O =−3.1 mA; V CC = 2.3 V 1.85--V I O =−2.7 mA; V CC = 3.0 V 2.67--V I O =−4.0 mA; V CC = 3.0 V2.55--VV OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.1V I O = 1.1 mA; V CC = 1.1 V --0.3× V CC V I O = 1.7 mA; V CC = 1.4 V --0.37V I O = 1.9 mA; V CC = 1.65 V --0.35V I O = 2.3 mA; V CC = 2.3 V --0.33V I O = 3.1 mA; V CC = 2.3 V --0.45V I O = 2.7 mA; V CC = 3.0 V --0.33V I O = 4.0 mA; V CC = 3.0 V--0.45V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.5µA I OFF power-off leakage currentV I or V O = 0 V to 3.6 V; V CC = 0 V--±0.5µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6 V;V CC =0V to 0.2V --±0.6µA I CC quiescent supply current V I = GND or V CC ; I O = 0A;V CC =0.8V to 3.6V --0.9µA ∆I CCadditional quiescent supply currentV I = V CC − 0.6 V; I O = 0A;V CC =3.3V --50µAT amb =−40°C to +125°C V OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.11--V I O =−1.1 mA; V CC = 1.1 V 0.6× V CC --V I O =−1.7 mA; V CC = 1.4 V 0.93--V I O =−1.9 mA; V CC = 1.65 V 1.17--V I O =−2.3 mA; V CC = 2.3 V 1.77--V I O =−3.1 mA; V CC = 2.3 V 1.67--V I O =−2.7 mA; V CC = 3.0 V 2.40--V I O =−4.0 mA; V CC = 3.0 V2.30--VTable 8:Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter ConditionsMinTypMaxUnit13.Dynamic characteristicsV OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.11V I O = 1.1 mA; V CC = 1.1 V --0.33× V CC VI O = 1.7 mA; V CC = 1.4 V --0.41V I O = 1.9 mA; V CC = 1.65 V --0.39V I O = 2.3 mA; V CC = 2.3 V --0.36V I O = 3.1 mA; V CC = 2.3 V --0.50V I O = 2.7 mA; V CC = 3.0 V --0.36V I O = 4.0 mA; V CC = 3.0 V--0.50V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.75µA I OFF power-off leakage currentV I or V O = 0 V to 3.6 V; V CC = 0 V--±0.75µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6 V;V CC =0V to 0.2V --±0.75µA I CC quiescent supply current V I = GND or V CC ; I O = 0A;V CC =0.8V to 3.6V -- 1.4µA ∆I CCadditional quiescent supply currentV I = V CC − 0.6 V; I O = 0A;V CC =3.3V--75µATable 8:Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter Conditions MinTypMaxUnitTable 9:Dynamic characteristicsVoltages are referenced to GND (ground =0V); for test circuit see Figure 7Symbol ParameterConditions MinTyp[1]Max UnitT amb = 25°C; C L = 5 pFt PHL , t PLHpropagation delay A to Ysee Figure 6V CC = 0.8 V -20.3-ns V CC = 1.1 V to 1.3 V 3.0 5.911.7ns V CC = 1.4 V to 1.6 V 2.6 4.37.6ns V CC = 1.65 V to 1.95 V 2.2 3.7 6.2ns V CC = 2.3 V to 2.7 V 2.0 3.1 4.8ns V CC = 3.0 V to 3.6 V1.92.84.0nsT amb = 25°C; C L = 10 pF t PHL , t PLHpropagation delay A to Ysee Figure 6V CC = 0.8 V -23.9-ns V CC = 1.1 V to 1.3 V 3.5 6.713.4ns V CC = 1.4 V to 1.6 V 3.0 5.08.7ns V CC = 1.65 V to 1.95 V 2.7 4.37.0ns V CC = 2.3 V to 2.7 V 2.4 3.6 5.5ns V CC = 3.0 V to 3.6 V2.43.44.6nsTable 9:Dynamic characteristics …continuedVoltages are referenced to GND (ground=0V); for test circuit see Figure7Symbol Parameter Conditions Min Typ[1]Max Unit T amb = 25°C; C L = 15 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 0.8 V-27.3-nsV CC = 1.1 V to 1.3 V 3.97.514.0nsV CC = 1.4 V to 1.6 V 3.3 5.59.7nsV CC = 1.65 V to 1.95 V 3.0 4.77.9nsV CC = 2.3 V to 2.7 V 2.8 4.1 5.9nsV CC = 3.0 V to 3.6 V 2.7 3.8 5.0ns T amb = 25°C; C L = 30 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 0.8 V-37.7-nsV CC = 1.1 V to 1.3 V 5.19.817.8nsV CC = 1.4 V to 1.6 V 4.37.112.3nsV CC = 1.65 V to 1.95 V 3.9 6.010.1nsV CC = 2.3 V to 2.7 V 3.6 5.27.4nsV CC = 3.0 V to 3.6 V 3.5 4.9 6.3ns T amb = 25°CC PD power dissipation capacitance f = 10 MHz[2][3]V CC = 0.8 V- 3.4-pFV CC = 1.1 V to 1.3 V- 3.9-pFV CC = 1.4 V to 1.6 V- 4.2-pFV CC = 1.65 V to 1.95 V- 4.6-pFV CC = 2.3 V to 2.7 V- 5.4-pFV CC = 3.0 V to 3.6 V- 6.1-pF[1]All typical values are measured at nominal V CC.[2]C PD is used to determine the dynamic power dissipation (P D inµW).P D=C PD×V CC2×f i×N+Σ(C L×V CC2×f o) where:f i=input frequency in MHz;f o=output frequency in MHz;C L=output load capacitance in pF;V CC=supply voltage in V;N=number of inputs switching;Σ(C L×V CC2×f o)=sum of the outputs.[3]The condition is V I=GND to V CC.Table 10:Dynamic characteristicsVoltages are referenced to GND (ground=0V); for test circuit see Figure7Symbol Parameter Conditions−40°C to +85°C−40°C to +125°C UnitMin Max Min MaxC L = 5 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 1.1 V to 1.3 V 2.213.6 2.215.0nsV CC = 1.4 V to 1.6 V 1.88.9 1.89.8nsV CC=1.65V to1.95V 1.97.3 1.98.1nsV CC = 2.3 V to 2.7 V 1.7 5.9 1.7 6.5nsV CC = 3.0 V to 3.6 V 1.7 4.9 1.7 5.4ns C L = 10 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 1.1 V to 1.3 V 2.515.8 2.517.4nsV CC = 1.4 V to 1.6 V 2.210.3 2.211.4nsV CC=1.65V to1.95V 2.38.4 2.39.3nsV CC = 2.3 V to 2.7 V 2.1 6.8 2.17.5nsV CC = 3.0 V to 3.6 V 2.1 5.6 2.1 6.2ns C L = 15 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 1.1 V to 1.3 V 2.817.3 2.819.1nsV CC = 1.4 V to 1.6 V 2.911.5 2.912.7nsV CC=1.65V to1.95V 2.69.4 2.610.4nsV CC = 2.3 V to 2.7 V 2.57.4 2.58.2nsV CC = 3.0 V to 3.6 V 2.4 6.1 2.4 6.8ns C L = 30 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 1.1 V to 1.3 V 4.520.5 4.522.6nsV CC = 1.4 V to 1.6 V 3.814.7 3.816.2nsV CC=1.65V to1.95V 3.412.0 3.413.2nsV CC = 2.3 V to 2.7 V 3.38.8 3.39.7nsV CC = 3.0 V to 3.6 V 3.27.3 3.28.1ns14.Waveforms[1]For measuring enable and disable times R L =5k Ω,for measuring propagation delays,setup and hold times and pulse width R L = 1 M Ω.Measurement points are given in Table 11.Logic levels: V OL and V OH are typical output voltage drop that occur with the output load.Fig 6.The data input (A) to output (Y) propagation delays Table 11:Measurement pointsSupply voltageOutput Input V CCV M V M V I t r = t f 0.8 V to 3.6 V0.5× V CC0.5× V CCV CC≤ 3.0 nsTest data is given in T able 12.Definitions for test circuit:R L = Load resistorC L = Load capacitance including jig and probe capacitanceR T =Termination resistance should be equal to the output impedance Z o of the pulse generatorFig 7.Load circuitry for switching times Table 12:Test dataSupply voltageLoad V EXT V CCC LR L[1]t PLH , t PHLt PZH , t PHZ t PZL , t PLZ 0.8 V to 3.6 V5 pF , 10 pF ,15pF and 30 pF5 k Ω or 1 M Ωopen GND2× V CCmna640t PHLt PLHV MV MA inputY outputGNDV IV OHV OL001aac521PULSE GENERATORDUTR TV I V OV EXTV CC R L5 k ΩC L15.Transfer characteristicsTable 13:Transfer characteristicsVoltages are referenced to GND (ground=0V; for test circuit see Figure7Symbol Parameter Conditions Min Typ Max UnitT amb = 25°CV(th)LH positive-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.30-0.60V V CC = 1.1 V0.53-0.90V V CC = 1.4 V0.74- 1.11V V CC = 1.65 V0.91- 1.29V V CC = 2.3 V 1.37- 1.77V V CC = 3.0 V 1.88- 2.29VV(th)HL negative-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.10-0.60V V CC = 1.1 V0.26-0.65V V CC = 1.4 V0.39-0.75V V CC = 1.65 V0.47-0.84V V CC = 2.3 V0.69- 1.04V V CC = 3.0 V0.88- 1.24VV hys hysteresisvoltage(V(th)LH−V(th)HL)see Figure8,Figure9,Figure10 and Figure11V CC = 0.8 V0.07-0.50V V CC = 1.1 V0.08-0.46V V CC = 1.4 V0.18-0.56V V CC = 1.65 V0.27-0.66V V CC = 2.3 V0.53-0.92V V CC = 3.0 V0.79- 1.31VT amb =−40°C to +85°CV(th)LH positive-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.30-0.60V V CC = 1.1 V0.53-0.90V V CC = 1.4 V0.74- 1.11V V CC = 1.65 V0.91- 1.29V V CC = 2.3 V 1.37- 1.77V V CC = 3.0 V 1.88- 2.29VV(th)HL negative-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.10-0.60V V CC = 1.1 V0.26-0.65V V CC = 1.4 V0.39-0.75V V CC = 1.65 V0.47-0.84V V CC = 2.3 V0.69- 1.04V V CC = 3.0 V0.88- 1.24VV hys hysteresisvoltage(V(th)LH−V(th)HL)see Figure8,Figure9,Figure10 and Figure11V CC = 0.8 V0.07-0.50V V CC = 1.1 V0.08-0.46V V CC = 1.4 V0.18-0.56V V CC = 1.65 V0.27-0.66V V CC = 2.3 V0.53-0.92V V CC = 3.0 V0.79- 1.31VT amb =−40°C to +125°CV(th)LH positive-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.30-0.62V V CC = 1.1 V0.53-0.92V V CC = 1.4 V0.74- 1.13V V CC = 1.65 V0.91- 1.31V V CC = 2.3 V 1.37- 1.80V V CC = 3.0 V 1.88- 2.32VV(th)HL negative-goingthreshold voltage see Figure8 and Figure9V CC = 0.8 V0.10-0.60V V CC = 1.1 V0.26-0.65V V CC = 1.4 V0.39-0.75V V CC = 1.65 V0.47-0.84V V CC = 2.3 V0.69- 1.04V V CC = 3.0 V0.88- 1.24VV hys hysteresisvoltage(V(th)LH−V(th)HL)see Figure8,Figure9,Figure10 and Figure11V CC = 0.8 V0.07-0.50V V CC = 1.1 V0.08-0.46V V CC = 1.4 V0.18-0.56V V CC = 1.65 V0.27-0.66V V CC = 2.3 V0.53-0.92V V CC = 3.0 V0.79- 1.31VTable 13:Transfer characteristics …continuedVoltages are referenced to GND (ground=0V; for test circuit see Figure7Symbol Parameter Conditions Min Typ Max Unit16.Waveforms transfer characteristicsV (th)LH and V (th)HL limits at 70% and 20%.Fig 8.Transfer characteristicFig 9.Definition of V (th)LH , V (th)HL and V hysFig 10.Typical transfer characteristics; V CC = 1.8 Vmna207V OV IV hysV (th)LHV (th)HLmna208V OV IV hysV (th)LHV (th)HLV I (V)0 2.01.60.8 1.20.4001aad0250.40.81.2I CC (mA)017.Application informationThe slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula:P ad =f i ×(t r ×I CC(AV)+t f ×I CC(AV))×V CC where:P ad =additional power dissipation (µW);f i =input frequency (MHz);t r =input rise time (ns); 10%to 90%;t f =input fall time (ns); 90%to 10%;I CC(AV)=average additional supply current (µA).Average I CC differs with positive or negative input transitions, as shown in Figure 12.An example of a relaxation circuit using the 74AUP1G14 is shown in Figure 13.Fig 11.Typical transfer characteristics; V CC = 3.0 V001aad026V I (V)03212134I CC (mA)(1)Positive-going edge.(2)Negative-going edge.Fig 12.Average I CC as a function of V CCAverage values for variable a are given in Table 14.Fig 13.Relaxation oscillator Table 14:Variable valuesSupply voltageVariable a 1.1 V 1.281.5 V 1.221.8 V 1.242.8 V 1.343.3 V1.45001aad027V CC (V)0.83.82.81.80.40.81.2I CC (mA)0(1)(2)mna035RCf 1T ---1a RC×----------------≈=18.Package outlineFig 14.Package outline SOT353-1 (TSSOP5)UNIT A 1A max.A 2A 3b p L H E L p w y v c e D (1)E (1)Z (1)θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITA mm0.101.00.80.300.150.250.082.251.851.351.150.65e 11.32.252.00.600.157°0°0.10.10.30.425DIMENSIONS (mm are the original dimensions)Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.0.460.21SOT353-1MO-203SC-88A00-09-0103-02-19w Mb pD Zee 10.151354θAA 2A 1L p (A 3)detail XLH EE cv M AXAy1.5 3 mm0scaleTSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mmSOT353-11.1Fig 15.Package outline SOT886 (XSON6)terminal 1index areaREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITASOT886MO-252SOT88604-07-1504-07-22DIMENSIONS (mm are the original dimensions)XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm DEe 1eA 1bLL 1e 11 2 mmscaleNotes1. Including plating thickness.2. Can be visible in some manufacturing processes.UNIT mm0.250.171.51.40.350.27A 1max b E 1.050.95D e e 1L 0.400.32L 10.50.6A (1)max 0.50.041625346×(2)4×(2)A19.AbbreviationsTable 15:AbbreviationsAcronym DescriptionCMOS Complementary Metal Oxide SemiconductorTTL T ransistor T ransistor LogicHBM Human Body ModelESD ElectroStatic DischargeMM Machine ModelCDM Charged Device Model20.Revision historyTable 16:Revision historyDocument ID Release date Data sheet status Change notice Doc. number Supersedes 74AUP1G14_120050720Product data sheet-9397 750 14676-21.Data sheet status[1]Please consult the most recently issued data sheet before initiating or completing a design.[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL .[3]For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.22.DefinitionsShort-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.23.DisclaimersLife support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductorscustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to theseproducts,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise specified.24.TrademarksNotice —All referenced brands, product names, service names and trademarks are the property of their respective owners.25.Contact informationFor additional information, please visit: For sales office addresses, send an email to: sales.addresses@Level Data sheet status [1]Product status [2][3]DefinitionI Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.IIPreliminary dataQualificationThis data sheet contains data from the preliminary specification.Supplementary data will be published at a later date.Philips Semiconductors reserves the right to change the specification without notice,in order to improve the design and supply the best possible product.III Product data ProductionThis data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).26.Contents1General description. . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Quick reference data. . . . . . . . . . . . . . . . . . . . . 25Ordering information. . . . . . . . . . . . . . . . . . . . . 26Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Functional diagram . . . . . . . . . . . . . . . . . . . . . . 38Pinning information. . . . . . . . . . . . . . . . . . . . . . 38.1Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38.2Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 39Functional description . . . . . . . . . . . . . . . . . . . 49.1Function table. . . . . . . . . . . . . . . . . . . . . . . . . . 410Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 411Recommended operating conditions. . . . . . . . 512Static characteristics. . . . . . . . . . . . . . . . . . . . . 513Dynamic characteristics . . . . . . . . . . . . . . . . . . 714Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1015Transfer characteristics. . . . . . . . . . . . . . . . . . 1116Waveforms transfer characteristics. . . . . . . . 1317Application information. . . . . . . . . . . . . . . . . . 1418Package outline . . . . . . . . . . . . . . . . . . . . . . . . 1619Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 1820Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1821Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 1922Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1923Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1924Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925Contact information . . . . . . . . . . . . . . . . . . . . 19© Koninklijke Philips Electronics N.V.2005All rights are reserved.Reproduction in whole or in part is prohibited without the priorwritten consent of the copyright owner.The information presented in this document doesnot form part of any quotation or contract,is believed to be accurate and reliable and maybe changed without notice.No liability will be accepted by the publisher for anyconsequence of its use.Publication thereof does not convey nor imply any license underpatent- or other industrial or intellectual property rights.Date of release: 20 July 2005Document number: 9397 750 14676。

TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC2G the condition is VI = GND to VCC. For HCT2G the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. INPUTS nA L H Note 1. H = HIGH voltage level; L = LOW voltage level. OUTPUTS nY H L PARAMETER propagation delay nA to nY input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC2G CL = 50 pF; VCC = 4.5 V 16 2 10 HCT2G 21 2 10 ns pF pF UNIT
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. 1.9 4.4 5.9 4.18 5.68 − − − − − − − 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 − − 1.9 4.4 5.9 4.13 5.63 − − − − − − − 1.9 4.4 5.9 3.7 5.2 − − − − − − − V V V V V V V V V V µA µA

74VHC14Hex Schmitt InverterGeneral DescriptionThe VHC14 is an advanced high speed CMOS Hex Schmitt Inverter fabricated with silicon gate CMOS technol-ogy. It achieves the high speed operation similar to equiva-lent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the VHC04 but the inputs have hysteresis between the positive-going and negative-going input thresholds, which are capable of transforming slowly changing input signals into sharply defined, jitter-free out-put signals, thus providing greater noise margin than con-ventional inverters.An input protection circuit ensures that 0V to 7V can be applied to the input pins without regard to the supply volt-age. This device can be used to interface 5V to 3V systems and two supply systems such as battery back up. This cir-cuit prevents device destruction due to mismatched supply and input voltages.Features■High Speed: t PD= 5.5 ns (typ) at V CC= 5V■Low power dissipation: I CC= 2 μA (Max) at T A= 25°C ■High noise immunity: V NIH= V NIL= 28% V CC (Min)■Power down protection is provided on all inputs■Low noise: V OLP= 0.8V (Max)■Pin and function compatible with 74HC14Ordering Code:Order Number PackageNumberPackage Description74VHC14M(Note 1)M14A14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow74VHC14MX_NL (Note 2)M14A Pb-Free 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150"Narrow74VHC14SJ(Note 1)M14D Pb-Free 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide74VHC14MTC(Note 1)MTC1414-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide74VHC14MTC_NL (Note 3)MTC14Pb-Free 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153,4.4mm Wide74VHC14MTCX_NL (Note 2)MTC14Pb-Free 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153,4.4mm Wide74VHC14N(Obsolete)N14A14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" WidePb-Free package per JEDEC J-STD-020B.Note 1: Surface mount packages are also available on Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.Note 2: “_NL” indicates Pb-Free product (per JEDEC J-STD-020B). Device is available in Tape and Reel only.Note 3: “_NL” indicates Pb-Free product (per JEDEC J-STD-020B).© 2010 Fairchild Semiconductor Corporation Logic Symbol/sIEEE/IECPin DescriptionsPin Names DescriptionA n InputsO n OutputsConnection Diagram/sTruth Table/sA OL HH L2Absolute Maximum Ratings(Note 4)Supply Voltage (V CC)−0.5V to +7.0V DC Input Voltage (V IN)−0.5V to +7.0V DC Output Voltage (V OUT)−0.5V to V CC+ 0.5V Input Diode Current (I IK)−20 mA Output Diode Current (I OK)±20 mA DC Output Current (I OUT)±25 mA DC V CC/GND Current (I CC)±50 mA Storage Temperature (T STG)−65°C to +150°C Lead Temperature (T L)Soldering (10 seconds)260°C Recommended Operating Conditions (Note 5)Supply Voltage (V CC)+2.0V to +5.5V Input Voltage (V IN)0V to +5.5V Output Voltage (V OUT)0V to V CC Operating Temperature (T OPR)−40°C to +85°C Note 4: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. The data book specifica-tions should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading vari-ables. Fairchild does not recommend operation outside databook specifica-tions.Note 5: Unused inputs must be held HIGH or LOW. They may not float.DC Electrical CharacteristicsSymbol Parameter V CCT A= 25°C T A=−40°C to +85°CUnits Conditions Min Typ Max Min MaxV P Positive Threshold Voltage 3.0 2.20 2.204.5 3.15 3.15V5.5 3.85 3.85V N Negative Threshold Voltage 3.00.900.904.5 1.35 1.35V5.5 1.65 1.65V H Hysteresis Voltage 3.00.30 1.200.30 1.204.50.40 1.400.40 1.40V5.50.50 1.600.50 1.60V OH HIGH Level Output Voltage 2.0 1.9 2.0 1.9V IN=V IL3.0 2.9 3.0 2.9V I OH=−50 μA4.5 4.4 4.5 4.43.0 2.58 2.48V I OH=−4 mA4.5 3.94 3.80I OH=−8 mA V OL LOW Level Output Voltage 2.00.00.10.1V IN= V IH3.00.00.10.1V I OL= 50 μA4.50.00.10.13.00.360.44V I OL= 4 mA4.50.360.44I OL= 8 mAI IN Input Leakage Current0–5.5±0.1±1.0μA V IN= 5.5V or GNDI CC Quiescent Supply Current 5.5 2.020.0μA V IN= V CC or GND Noise CharacteristicsSymbol Parameter V CCT A= 25°CUnits Conditions Typ LimitsV OLP (Note 6)Quiet Output Maximum Dynamic V OL5.00.40.8VC L= 50 pFV OLV (Note 6)Quiet Output Minimum Dynamic V OL5.0−0.4−0.8VC L= 50 pFV IHD (Note 6)Minimum HIGH Level Dynamic Input Voltage5.0 3.5VC L= 50 pFV ILD (Note 6)Maximum LOW Level Dynamic Input Voltage5.0 1.5VC L= 50 pFNote 6: Parameter guaranteed by design.AC Electrical CharacteristicsSymbol Parameter V CCT A= 25°C T A=−40°C to +85°CUnits Conditions Min Typ Max Min Maxt PLH Propagation Delay 3.3 ± 0.38.312.8 1.015.0ns C L= 15 pFt PHL Time10.816.3 1.018.5C L= 50 pF5.0 ± 0.5 5.58.6 1.010.0ns C L= 15 pF7.010.6 1.012.0C L= 50 pFC IN Input Capacitance41010pF V CC= OpenC PD Power Dissipation Capacitance21pF(Note 7)Note 7: C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC (Opr) = C PD * V CC * f IN+ I CC/6 (per Gate)468。