当前位置：文档之家 › BAT54T

BAT54T

  • 格式：pdf
  • 大小：65.91 KB
  • 文档页数：2

BAT54T

SCHOTTKY DIODE

Case: Molded plastic bodyTerminals: Plated leads solderable per MIL-STD-750, Method 2026Polarity: Polarity symbols marked on caseMarking: L9FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

21100200300600200625125-65 to +15030Low forward voltage dropFast switching timeSurface mount package ideally suitedfor automatic insertion

Maximum ratings and electrical characteristics, Single diode @TA=25CSYMBOLSUNITSVRDC Blocking voltageAverage rectified output currentForward continuous currentRepetitive peak forward currentForward surge currentPower dissipationTermal resistance,junction to ambient airJunction temperatureStorage temperatureNon-Repetitive peak reverse voltageRΘJATjTSTGLIMITS

IFRMPd

Electrical ratings @TA=25CSYMBOLSConditionsV(BR)RVF1VF2VF3VF4VF5IRCTtrrReverse breakdomn voltage

Forward voltage

Reverse currentCapacitance between terminalsReverse recovery timePARAMETERPARAMETER

Min.Typ.Max.Unit30VmVmVmVmVmVpFnsIR=100uAIF=0.1mAIF=1.0mAIF=10mAIF=30mAIF=100mAVR=25VVR=0,f=1.0MHzIF=10mA,IR=10mA to 1mARL=100IFSMIFM

24032040050010002.0105.0uAVRMIOVmAmAmAmAmWK/WCCVDimensions in millimeters and (inches).25(.010)MINSOD-1231.80(.071)1.40(.055)

3.86(0.152)3.56(0.145)2.84(0.112)2.54(0.100).71(0.028).50(0.020)1.35(.053).94(.037).15(.006)MAX

MDD ELECTRONICRATINGS AND CHARACTERISTIC CURVES BAT54T

0 5 10 15 20 25 30 35 40REVERSE VOLTAGE VR (V)FIG. 2-TYPICAL VALUES OF REVERSE CURRENTVS REVERSE VOLTAGE (PER LEG)FIG. 1- MAX.FORWARD VOLTAGE DROPCHARACTERISTICS(PER LEG)

INSTANTANEOUS FORWARD CURRENT-IF(A)10.10.010.0010.00010.00001FORWARD VOLTAGE DROP-VFM(V)REVERSE CURRENT-IR(mA)10.10.010.001

00 0.2 0.4 0.6 0.8 1

FIG. 3- TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE-CT(pF)

0 5 10 15 20 25 3010

1REVERSE VOLTAGE-VR(V)FIG. 4- FORWARD POWER LOSSCHARACTERISTICS

AVERAGE PWER LOSS (Watts)

0 0.1 0.2 0.30.4

0.3

0.2

0.1

0AVERAGE FORWARD CURRENT-IF(AV)(A)T=25 CT=25 CTj=150 CTj=125 C

Tj=25 CT=25 CT=50 CT=75 CT=100 CT=125 CT=150 C

DCD=0.75D=0.50D=0.33D=0.2D=-0.25RMS Limit

FIG. 5- MAX NON-REPETITIVE SURGE CURRENT

0 100 1000 1000010

1

0.1SQUARE WAVE PULSEDURATION-tP(MICROSEC)NON-REPETITIVE SURGE CURRENT-IFSM(A)

At any rated load conditionand with rated vrrm appliedfollowing surge

MDD ELECTRONIC

合集下载

BAT54CTA中文资料

BAT54CTA中文资料

SOT23 SILICON EPITAXIALSCHOTTKY BARRIER DIODESISSUE 1󰂖 SEPTEMBER 19957

FEATURES: Low VF & High Current CapabilityAPPLICATIONS: PSU, Mobile Telecomms

& SCSIABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITContinuous Reverse VoltageVR30VForward CurrentIF200mAForward Voltage @ IF =10mAVF400mVRepetitive Peak Forward CurrentIFRM300mANon Repetitive Forward Current t<1sIFSM600mAPower Dissipation at Tamb=25°CPtot330mWStorage Temperature RangeTstg-55 to +150°CJunctionTemperature ¤Tj125°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS.Reverse BreakdownVoltageV(BR)R3050VIR=10µAForward VoltageVF1352002803505302403204005001000mVmVmVmVmVIF=0.1mAIF=1mAIF=10mAIF=30mAIF=100mAReverse CurrentIR2.54µAVR=25VDiode CapacitanceCD7.510pFf=1MHz,VR=1VReverse Recover Timetrr5nsswitched from IF=10mA to IR=10mARL=100Ω, Measuredat IR=1mA¤ Dual Device; For simultaneous continuous use Tj=100°C.321

Diode_Schottky

Diode_Schottky

ProductDatasheetPb-freeStatusDescription

MBRB30H60CTT4GMBRB30H60CT-1/D (15YActiveNEW30A/60V H-SERIES

MBRF2045CTGMBR2045CT/D (142.0kBYActiveNEWMBRF2045CTG · 20A 4

MBRF30H100CTGMBR30H100CT/D (123.0YActiveNEW30A 100V H series Scho

NSR0240HT1GNSR0240H/D (107.0kB)YActiveNEWSOD323 SCHTY BARRI

NSR0240V2T1GNSR0240V2T1/D (108.0YActiveNEW40V 0.25A low IR SOD-5

NSR0340HT1GNSR0340H/D (108.0kB)YActiveNEW40V 0.25A low VF SOD-

NSR0340P2T5GNSR0340P2/D (106.0kBYActiveNEW40V 0.2A low VF SOD-9

NSR0340V2T1GNSR0340V2T1/D (109.0YActiveNEW40V 0.25A low VF SOD-

NSR0520V2T1GNSR0520V2T1/D (107.0YActiveNEW20V 0.5A low VF SOD-5

NSR0620P2T5GNSR0620P2/D (106.0kBYActiveNEW20V 0.5A low IR SOD-92

1N5817G1N5817/D (75.0kB)YActive1 A, 20 V Schottky Rectif

1N5817RLG1N5817/D (75.0kB)YActive1 A, 20 V Schottky Rectif

1N5818G1N5817/D (75.0kB)YActive1 A, 30 V Schottky Rectif

BAT54SWT1G中文资料

BAT54SWT1G中文资料

©2005 Fairchild Semiconductor April 2005BAT54SWT1G/BAT54CWT1G Schottky Diodes

BAT54SWT1G/BAT54CWT1G Rev. ABAT54SWT1G/BAT54CWT1G

Schottky Diodes

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)

Electrical Characteristics TC = 25°C unless otherwise notedSymbolParameterValueUnit

VRRMMaximum Repetitive Reverse Voltage30V

IF(AV)Average Rectified Forward Current200mA

IFSMNon-repetitive Peak Forward Surge CurrentPulse Width = 1.0 second600mA

TSTGStorage Temperature Range-65 to +125°C

TJOperating Junction Temperature-65 to +125°C

SymbolParameterValueUnit

PDPower Dissipation232mW

RθJAThermal Resistance, Junction to Ambient430°C/W

BAT54T

BAT54T

BAT54T

SCHOTTKY DIODE

Case: Molded plastic bodyTerminals: Plated leads solderable per MIL-STD-750, Method 2026Polarity: Polarity symbols marked on caseMarking: L9FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

21100200300600200625125-65 to +15030Low forward voltage dropFast switching timeSurface mount package ideally suitedfor automatic insertion

Maximum ratings and electrical characteristics, Single diode @TA=25CSYMBOLSUNITSVRDC Blocking voltageAverage rectified output currentForward continuous currentRepetitive peak forward currentForward surge currentPower dissipationTermal resistance,junction to ambient airJunction temperatureStorage temperatureNon-Repetitive peak reverse voltageRΘJATjTSTGLIMITS

IFRMPd

Electrical ratings @TA=25CSYMBOLSConditionsV(BR)RVF1VF2VF3VF4VF5IRCTtrrReverse breakdomn voltage