TSDF1205中文资料
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Document Number 85065 Rev. 5, 30-Jun-00
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元器件交易网
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken Dimensions of TSDF1205 in mm
Vishay Telefunken Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
96 12240
Dimensions of TSDF1205R in mm
96 12239
www.vishay.de • FaxBack +1-408-970-5600 4 (6)
Document Number 85065 Rev. 5, 30-Jun-00
元器件交易网
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken Dimensions of TSDF1205W in mm
96 12237
Dimensions of TSDF1205RW in mm
96 12238
Document Number 85065 Rev. 5, 30-Jun-00
元器件交易网
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
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0.5 f=1MHz 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB – Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
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Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Features
D Low power applications D Very low noise figure D High transition frequency fT = 12 GHz
2 1 1 2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1205 Marking: F05 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
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VCE=2V f=2GHz ZS=50W
VCE=2V
0
1
2
3
4
5
6
IC – Collector Currenurrent ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Applications
For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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元器件交易网
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken Ozone Depleting Substances Policy Statement
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test Conditions VCE = 2 V, IC = 5 mA, f = 1 GHz VCB = 1 V, f = 1 MHz VCE = 1 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = 50 W, f = 2 GHz VCE = 2 V, IC = 2 mA, f = 2 GHz (@Fopt) VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = 50 W f = 2 GHz VCE = 2 V, IC = 5 mA, Z0 = 50 W, f = 2 GHz Symbol fT Ccb Cce Ceb F Gpe Gpe S21e2 Min Typ 12 0.2 0.35 0.15 1.3 13 11.5 12.5 Max Unit GHz pF pF pF dB dB dB dB
Transducer gain
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Document Number 85065 Rev. 5, 30-Jun-00
元器件交易网
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF ) 100 P tot – Total Power Dissipation ( mW ) 80 60 40 20 0 0
16 fT – Transition Frequency ( GHz ) 14 12 10 8 6 4 2 0 0
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Figure 3. Collector Base Capacitance vs. Collector Base Voltage
3.0
f=1GHz VCE=3V F – Noise Figure ( dB ) 2.5 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 2 V, IC = 2 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 2 mA V(BR)CEO 4 V VCEsat 0.1 0.5 V hFE 50 120 250
TSDF1205RW Marking: W0F Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 9 4 2 12 40 150 –65 to +150 Unit V V V mA mW °C °C
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