TSMF1020中文资料
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Document Number 8106116758TSMF1000TSMF1030TSMF1040TSMF1020High Speed IR Emitting Diode in SMD PackageDescriptionTSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero tech-nology (DH) molded in clear SMD package with dome lens.DH chip technology represents best performance for speed, radiant power, forward voltage and longterm reliability.Features•High speed•Extra high radiant power •Low forward voltage •Suitable for high pulse current operation •Angle of half intensity ϕ = ± 17° •Peak wavelength λp = 870 nm •Longterm reliability•Matched with PIN Photodiode TEMD1000 •Versatile terminal configurationsApplicationsIrDA compatible data transmission Miniature light barrierFor control and drive circuits Photointerrupters Incremental sensorsAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedBasic CharacteristicsT amb = 25°C, unless otherwise specified T amb = 25°C, unless otherwise specifiedParameterTest conditionSymbol Value Unit Reverse Voltage V R 5V Forward Current I F 100mA Peak Forward Current t p /T = 0.5, t p = 100 µs I FM 200mA Surge Forward Current t p = 100 µsI FSM 0.8A Power Dissipation P V 190mW Junction T emperature T j 100°C Operating T emperature Range T amb - 40 to + 85°C Storage T emperature Range T stg - 40 to + 100°C Soldering Temperaturet ≤ 5secT sd <260°C Thermal Resistance Junction/AmbientR thJA400K/WParameterTest conditionSymbol MinTyp.Max Unit Forward Voltage I F = 20 mAV F 1.3 1.5V I F = 1 A, t p = 100 µs V F 2.4V Temp. Coefficient of V F I F = 1.0mA TK VF - 1.7mV/K Reverse Current V R = 5 VI R 10µA Junction CapacitanceV R = 0 V , f = 1 MHz, E = 0C j160pFPackage Dimensions in mmTSMF1000TSMF1020 Document Number 81061Package Dimensions in mmTSMF1030TSMF1040Document Number Reel Dimensions Document Number 81061Taping TSMF1000Document Number Taping TSMF1030Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423Document Number 。
