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2N5193中文资料

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FIGURE
6 – EFFECTS
OF BASE-EMITTER
RESISTANCE
6 —
10-2
250c [ ‘lcEs
I
I
I
Af 1 1
I
in-3
I
+0.4
I
+0.3
I
+0.2
I
+0.1
I
o
I
-0.1
I
-0.2
I
-0.3
I
-a.4
I
-0.5
I
-0.6
‘“
TURN-ON vBE(~ff) ~“ o ———
INC. .s 3!W R1
IMPERIAL LITHO K~10
Unit Vdc Vdc
Vdc
Collector. Emitter Voltage Collector. Base Voltage Emitter. Base Voltage
Collector Current
‘CEO ., ‘CB VEB
Ic
60 60
5.0 ~ —
—
—4.0
Adc V~dc
Base Current
50 watts
under of 0.1
the following
conditie
tl = 0.1 ms, tp=
0.5ms.
(D = 0.2). ms and D = 0.2,
Using Figure 13, at a pulse width reading of r(tl, D) is 0.27. The peak rise in junction ‘ AT= r(tj X Pp X temperature
&
(1 ) Pulse Test: Pulse Wtdth 5300
vs. Dutv CYCI. <2.0%. ,

IN C.,
197
;,. ,
元器件交易网
.
FIGURE
1 –DC
CURRENT
GAIN
e
FIGURE
4–
TEMPERATURE
COEFFICIENTS
4
I
0.4 ~vCE(sat)@lC/lB=lo
. . . for use in power amplifier Complement MJE5191, MJE5192.
and switching
“MAXIMUM
RATINGS
Rating
Symbol 2N5193
MJE5193 40
40
2N5194 MJE5194
2N5195 MJE5195 80 80
6JC=
is therefore: X 50 X3.12 =42.2°C
0,27
;=, .,. ::. . ... . ..
~. -@
3581-1 PRINTED IN mA 11-71 BOX 20912
q
PHOENIX, llM
ARIZONA
a5036
.
A
SUBSIDIARY
OF
MOTOROLA ,.
lB .
—1.0 $$~
40
,
— M;e;~,93
60
,
Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage J“”ctio” Temperature Range
I
‘D
Watts
t
320 —-65to+150
Characteristic
lT~
= 25°C
unless otherwise noted) I Symb~&
!,(0/11(l_~95 0645
;.
)FF CHARACTERISTICS
Collector-Emitter ,’ (l C= O.l AdC, lB=O) Sustaining Voltage (11 2N5193, 2N5194, MJE5193 MJE5194
1.0
2.0 3.04.0
Ic, COLLECTOR CURRENT(AMP)
Ic, COLLECTOR CURRENT (AMP)
semiconductor
Produces
inc.
. .
m
*.
元器件交易网
.
FIGURE
5 – COLLECTOR
CUT-OFF
REGION
ii i Ill ~:1~1 ,~–
-/ ~~;
q
,.
Collwtor-Emitter (lC=l.5Adc, (!C = 4.OAdc,
Saturation voltage (1) lB=0.15Adc) IB = l. OAdc)
Vdc — — 0.6 1.2 Vdc : — 1.2
0017 0,02i
0.1 mAdc 1.0
,, .
DC ‘~~rrent Gain!l ) 2N5193, 2N5194, MJE5193, MJE5194, , :
hFE 25
’20
— 100
80
(1C = 1’.5 Adc, VCE = 2.0 Vdc) ..
,.. .
0 ;n5 0115
(1C = 4.0 Ad.,
.Current.Gain-Ba’ndwidth
L
““
‘
‘
fT
(1C = 1.0 Adc, VCE. = 10 Vdc, f = 1.0 MHz)
,
..
. l“$. icates JEDEC Regisrerd
Data for 2N5193
Series. . ,, . CASE 19904 @
MOTOROLA
PULSE k
RL
APPROX -11 V ! u 1,
70 50 0.1 0.2 0.3 0.5 1,0 2.0 3.0 5.0 (VOLTS) 10 20 3040 VR, REVERSE~OLTAGE
.
FIGURE
10 –TURN-OFF
TIME
Zo 1.0
( [ g : F -. 0,7 0,5 0.3 0.2 0,1 0,07 0.05 0.03 3.04.0 lc, COLLECTOR CURRENT (AMP) . D.02 0.050,07 0.1 0.2 0.3 0.5 0,7:.’ 1.0 2.0 3,04.0
.
. ..
..,,. ... ~
40 60 80
STYLE1 PIN l. EhllTTER
n ~
L
-.--.-’
11-
— —
Vdc
mAdc
— — —
1.0 1.0 1.0 mAdc
.!
— — — —
0.1 0.1 0.1
2.0 2.0
—
2.0
,Icao
,,
lEao
— — — —
mAdc
0.1 0.1
The data of Figures 11 and l~:$fs bas~ on TJ(pk) = 150°C; Tc is variable, depending on condit~’~$$,,,~cond breakdown pulse limits @>~&~#vided T~(pk) ~ 150°C. At high are val id for dutv cycles to.+ case temperatums, thermal ~~?~tions will -reduce the power that can be handled toval~#~ss than the limitations imposed by @cond breakdown. (See ~$~~$~” .~?$ ‘ “*C? ,., . ..
480 —
mW/°C Oclw .::($T
,J::”~,
~:.~:, $3JY ~
TJ, Tstg
THERMAL
CHARACTERISTICS
,.) ,+*:1.
~’ :,$>
--A
2N5193 2N5194
&l ,J—
II lo?l,– !!’)?,
2N51Y5
“-l-
.
*ELECTRICAL
CHARACTERISTICS
,,
...., ,., ,7 ;.
.
~/$,~$lGN NOTE: .,.> >,>Y.$,:’”
USE OF TRANSIENT
THERMAL
RESISTANCE
DATA
Pp
I
Pp
A train of periodical power pulses can be represented by the model shown in Figure A. -Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 13 was calculated for various dutv cvcles. To find OJC(t), multiply
Base.Emitter On,Voltage (1) (1C = 1.5 Adc,, VCE = 2.0 Vdcl
:..
STYLE

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2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

集电极电流
50 VCB = 100V
10
10
10
1β
100 Co
o
125 C
0.1
o
-40 Co
25 Co
75 C
- CCEO(SALT)LECTOR-EMITTER VOLTAGE [V]
0.01
V
1
10
100
IC- COLLECTOR CURRENT [mA]
Figure 2. Collector-Emitter Saturation Voltage vs.
芯片中文手册,看全文,戳
2N5551 / MMBT5551 NPN通用放大器
2013年6月
描写
该装置是专为通用高压放大器和气体放电的显示驱动程序.
2N5551
TO-92
MMBT5551
3
2
1 SOT-23
Marking: 3S 1. Base 2. Emitter 3. Collector
MMBT5551
350 2.8
357
Units
mW mW/°C °C/W °C/W
2
芯片中文手册,看全文,戳
电气特性
(4)
价值观是在T 符
A = 25°C除非另有说明. 参数
断特性
V（BR）CEO 集电极 - 发射极击穿电压 V（BR）CBO 集电极基击穿电压 V （BR）EBO 发射极基极击穿电压
Value
160 180
6 600 -55到+150
2N5551 / MMBT5551 - NPN通用放大
器
Units
V V V mA °C
热特性
价值观是在T
2N1595中文资料

2N1595中文资料

2N1595 thru 2N1599SILICON THYRISTORIndustrial-type, low-current silicon controlled rectifiersin a three-lead package ideal for printed-circuit applications.Current handling capability of 1.6 amperes at junction temperetures to 125°CMAXIMUM RATINGS (*)T J=125°C unless otherwise notedSymbol Ratings2N15952N15962N15972N15982N1599V RSM(REP)Peak reverse blocking voltage *50100200300400VI T(RMS)Forward Current RMS (all conduction1.6Ampangles)I TSM Peak Surge Current15Amp (One Cycle, 60Hz, T J=-65 to +125°C)P GM Peak Gate Power – Forward0.1W P G(AV)Average Gate Power - Forward0.01W I GM Peak Gate Current – Forward0.1Amp V GFM Peak Gate Voltage - Forward10V V GRM Peak Gate Voltage - Reverse10V T J Operating Junction Temperature-65 to +125Range°C T STG Storage Temperature Range-65 to +150ELECTRICAL CHARACTERISTICST J=25°C unless otherwise noted, R GK=1000ΩSymbol Ratings2N15952N15962N15972N15982N1599V DRM Peak Forward BlockingMin :50100200300400V Voltage *I RRM Peak Reverse Blocking CurrentMax : 1.0mA (Rated V DRM, T J =125°C)2N1595 thru 2N1599Symbol Ratings2N15952N15962N15972N15982N1599I DRM Peak Forward Blocking Current(Rated V DRM with gate open , T J=125°C)Max :1.0mAI GT Gate Trigger Current (2)Anode Voltage=7.0 Vdc, R L=12ΩTyp : 2.0Max : 10mAGate Trigger VoltageAnode Voltage=7.0 Vdc, R L=12ΩTyp : 0.7Max : 3.0V GTV DRM= Rated, R L=100Ω, T J=125°C Min : 0.2VI H Holding CurrentAnode Voltage=7.0 Vdc, gate open Typ : 5.0mAV TM Forward On VoltageI T=1 AdcTyp : 1.1Max : 2.0Vt gt Turn-On Time (t d+t r)I GT=10 mA, I T=1 A Typ : 0.8µst q Turn-Off TimeI T=1 A, I R =1 A, dv/dt=20 V/µs,T J=125°CV DRM= Rated VoltageTyp : 10µs* V DRM or V RSM can be applied for all types on a continuous dc basis without incurring damage. MECHANICAL DATA CASE TO-39DIMENSIONSmm inchesA6,250,24B13,590,53C9,240,36D8,240,32E0,780,03F1,050,041G0,420,165H45°L5,10,2Pin 1 :CathodePin 2 :GatePin 3 :AnodeInformation furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear.Data are subject to change without notice.。

场效应管参数

场效应管参数


SI-N SI-N SI-P SI-N SI-P P-DARL+D SI-N SI-N SI-N SI-N SI-P SI-P SI-P SI-P SI-P N-DARL P-DARL SI-N N-DARL SI-P N-DARL SI-P SI-N SI-P SI-N SI-P SI-N SI-P SI-P N-FET N-FET SI-N SI-N
SI-N SI-P P-FET N-FET SI-P N-FET SI-N SI-P SI-P GE-P SI-P N-FET SI-P GE-P GE-P SI-N SI-N SI-P N-FET SI-N SI-N N-FET N-FET N-FET N-FET SI-N SI-P N-FET SI-N SI-N SI-P SI-P SI-N
2SA1120 SI-P 2SA1123 SI-P 2SA1124 SI-P 2SA1127 SI-P 2SA1141 SI-P 2SA1142 SI-P 2SA1145 SI-P 2SA1150 SI-P 2SA1156 SI-P 2SA1160 SI-P 2SA1163 SI-P 2SA1170 SI-P 2SA1185 SI-P 2SA1186 SI-P 2SA1200 SI-P 2SA1201 SI-P 2SA1206 SI-P 2SA1207 SI-P 2SA1208 SI-P 2SA1209 SI-P 2SA1210 SI-P 2SA1213 SI-P 2SA1215 SI-P 2SA1216 SI-P 2SA1220A SI-P 2SA1221 SI-P 2SA1225 SI-P 2SA1227A SI-P 2SA1232 SI-P 2SA1241 SI-P 2SA1242 SI-P 2SA1244 SI-P 2SA1249 SI-P
半导体三极管知识介绍

半导体三极管知识介绍

半导体三极管知识介绍5.1 半导体三极管英文缩写：Q/T5.2 半导体三极管在电路中常用“Q”加数字表示，如：Q17表示编号为17的三极管。

5.3半导体三极管特点：半导体三极管（简称晶体管）是内部含有2个PN结，并且具有放大能力的特殊器件。

它分NPN型和PNP型两种类型，这两种类型的三极管从工作特性上可互相弥补，所谓OTL电路中的对管就是由PNP型和NPN型配对使用。

NPN型，锗管多为PNP型。

`E() C(集电极)B(基极)NPN型三极管 PNP型三极管5.4 半导体三极管放大的条件:要实现放大作用，必须给三极管加合适的电压，即管子发射结必须具备正向偏压，而集电极必须反向偏压,这也是三极管的放大必须具备的外部条件。

5.5 半导体三极管的主要参数a; 电流放大系数：对于三极管的电流分配规律Ie=Ib+Ic,由于基极电流Ib的变化，使集电极电流Ic发生更大的变化，即基极电流Ib的微小变化控制了集电极电流较大，这就是三极管的电流放大原理。

即β=ΔIc/ΔIb。

b;极间反向电流，集电极与基极的反向饱和电流。

c;极限参数：反向击穿电压，集电极最大允许电流、集电极最大允许功率损耗。

5.6半导体三极管具有三种工作状态，放大、饱和、截止，在模拟电路中一般使用放大作用。

饱和和截止状态一般合用在数字电路中。

a;半导体三极管的三种基本的放大电路。

共射极放大电路共集电极放大电路b;三极管三种放大电路的区别及判断可以从放大电路中通过交流信号的传输路径来判断，没有交流信号通过的极，就叫此极为公共极。

注：交流信号从基极输入，集电极输出，那发射极就叫公共极。

交流信号从基极输入，发射极输出，那集电极就叫公共极。

交流信号从发射极输入，集电极输出，那基极就叫公共极。

5.7 用万用表判断半导体三极管的极性和类型(用指针式万用表).a;先选量程：R﹡100或R﹡1K档位.b;判别半导体三极管基极：用万用表黑表笔固定三极管的某一个电极，红表笔分别接半导体三极管另外两各电极，观察指针偏转，若两次的测量阻值都大或是都小，则改脚所接就是基极（两次阻值都小的为NPN型管，两次阻值都大的为PNP型管），若两次测量阻值一大一小，则用黑笔重新固定半导体三极管一个引脚极继续测量，直到找到基极。