R1973BBLKBLKER0;中文规格书,Datasheet资料

1/24/111ORDERING INFORMATION:See detailed ordering and shipping information on the last page of this data sheet.Notes through are on page 10Features and BenefitsBenefitsApplication(s)• System/Load Switchresults in ⇒IRLML2244TRPbFIRLML2244TRPbF 3Fig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature-V DS , Drain-to-Source Voltage (V)0.1110100-V DS , Drain-to-Source Voltage (V)-I D , D r a i n -t o -S o u r c e C u r r e n t (A )T J , Junction Temperature (°C)R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c eIRLML2244TRPbFFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain DiodeForward Voltage110100-V DS , Drain-to-Source Voltage (V)10100100010000C , C a p a c i t a n c e (p F )-V SD , Source-to-Drain Voltage (V)0.1110100-I S D , R e v e r s e D r a i n C u r r e n t (A )110100-V DS , Drain-to-Source Voltage (V)0.010.1110100-I D , D r a i n -t o -S o u r c e C u r r e n t (A)048121620Q G, Total Gate Charge (nC)2468101214-V G S , G a t e -t o -S o u r c e V o l t a g e (V )IRLML2244TRPbF 5Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-AmbientFig 9. Maximum Drain Current Vs.Ambient TemperatureFig 10b. Switching Time WaveformsFig 10a. Switching Time Test Circuit255075100125150T A , Ambient Temperature (°C)012345-I D , D r a i n C u r r e n t (A)t 1 , Rectangular Pulse Duration (sec)R DV DDV DSV t t t tFig 13. Typical On-Resistance Vs. DrainCurrentFig 12. Typical On-Resistance Vs. GateVoltageFig 14b. Gate Charge Test CircuitFig 14a. Basic Gate Charge Waveform 24681012-V GS, Gate -to -Source Voltage (V)20406080100120R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (m Ω)5101520253035-I D , Drain Current (A)04080120160200R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (m Ω)Vgs = -4.5VIdQgs1Qgs2Qgd Qgodr 0 7Fig 15. Typical Threshold Voltage Vs.Junction TemperatureFig 16. Typical Power Vs. TimeT J , Temperature ( °C )-V G S (t h ), G a t e t h r e s h o l d V o l t a g e (V )Time (sec)P o w e r (W )IRLML2244TRPbFMicro3 (SOT-23/TO-236AB) Part Marking InformationMicro3 (SOT-23) Package OutlineDimensions are shown in millimeters (inches)Note: For the most current drawing please refer to IR website at: /package/cF =DA T E C E =X = D =C =B =A =W = (1-26) IF PRECEDED BY LAST DIG IT O F C ALENDA R YEA RH =G =KH G F E D C B 200620032002200520042008200720102009J Y 51292830C B D52ZNote: A line a bove the work we e k(a s s how n he re ) indic a tes Le a d - Fre e.I =J = IRLML2030L = IRLML0060M = IRLML0040K = IRLML0100N = IRLML2060P = IRLML9301R = IRLML9303C u HALOG PAIRLML2244TRPbF 9Micro3™ Tape & Reel InformationDimensions are shown in millimeters (inches)2.05 ( .080 )1.95 ( .077 )TRFEED DIRECTION4.1 ( .161 )3.9 ( .154 )1.6 ( .062 )1.5 ( .060 )1.85 ( .072 )1.65 ( .065 )3.55 ( .139 )3.45 ( .136 )1.1 ( .043 )0.9 ( .036 )4.1 ( .161 )3.9 ( .154 )0.35 ( .013 )0.25 ( .010 )8.3 ( .326 )7.9 ( .312 )1.32 ( .051 )1.12 ( .045 )9.90 ( .390 )8.40 ( .331 )178.00( 7.008 ) MAX.NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.Note: For the most current drawing please refer to IR website at: /package/IRLML2244TRPbFData and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .01/2011Qualification standards can be found at International Rectifier’s web site /product-info/reliabilityHigher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: /whoto-call/salesrep/Applicable version of JEDEC standard at the time of product release.Notes:Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994.Qualification information †分销商库存信息: IRIRLML2244TRPBF。

Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
Publication Order Number: MBR0540T1/D
/
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
100
10
25C
1.0 TJ = 125C TJ = -40C TJ = 25C TJ = 100C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 0.5 A) (iF = 1 A) Maximum Instantaneous Reverse Current (Note 3) (VR = 40 V) (VR = 20 V) 3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%. IR Symbol vF TJ = 25C 0.51 0.62 TJ = 25C 20 10 Value TJ = 100C 0.46 0.61 TJ = 100C 13,000 5,000 mA Unit V

Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*
0.3 1.0 1.2 2.0
V V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 300 4.0 20 2.0 MHz pF pF dB

0.1
TJ = 25°C
VDS = 50V ≤60µs PULSE WIDTH
0.01
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics

RDS(on) , Drain-to-Source On Resistance (Normalized)

/
ID , Drain Current (A)
IRLML0100TRPbF
2.0
RD
VDS
1.5
VGS RG
D.U.T.
+-VDD
1.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.5
Fig 10a. Switching Time Test Circuit
Application(s) • Load/ System Switch Features and Benefits Features
Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1
PD - 97157
IRLML0100TRPbF
HEXFET® Power MOSFET
VDS
100
V
VGS Max
± 16
V
G1
RDS(on) max