C8051F006-GQ中文资料

EP1C6
5,980 20
92,160 2
185
EP1C12
12,060 52
239,616 2
249
EP1C20 20,060
64 294,912
2 301
1
芯片中文手册,看全文,戳
气旋 FPGA系列数据手册
初稿信息
Cyclone器件在四方扁平封装（QFP）,并提供节省空间
FineLine BGA 包（见
Cyclone器件提供一个全局时钟网络和多达两个PLL.全局时钟网络由八 个全局时钟线驱动整个器件.全局时钟网络可以为设备内所有资源 ,如IOEs,LE和存储器块提供时钟.
全局时钟线也可用于控制信号.旋风PLL提供通用与时钟倍频和移相,以 及外部输出高速差分I / O支持时钟.
图1
示出旋风EP1C12装置图.
M4K RAM块与4K位内存加上平价（4,608位）真正双端口存储器 块.这些块宽高达200 MHz提供专用真正双端口,简单双端口或单端 口内存最高可达36位.这些块加在器件分成列在一定LAB之间. Cyclone器件提供嵌入式RAM 60至288千位之间.
每个Cyclone器件I / O引脚由I / O单元（IOE）位于输送 围绕装置外周端部LAB行和列. I / O 引脚支持各种单端和差分I / O标准,如 66 MHz32位PCI标准,并在到LVDS I / O标准 311 Mbps.每个IOE包含一个双向I / O缓冲区和三个寄存器 用于登记输入,输出和输出使能信号.两用 DQS,DQ和DM引脚以及延时链（用于相位对齐DDR 信号）提供与外部存储器设备,诸如接口支持 DDR SDRAM和高达133兆赫（266 Mbps）FCRAM器件.
配置设备配置Cyclone器件.

Philips Semiconductors Product specificationRectifier diodeBYC8-600ultrafast, low switching lossFEATURESSYMBOL QUICK REFERENCE DATA• Extremely fast switching• Low reverse recovery current • Low thermal resistance• Reduces switching losses in associated MOSFETAPPLICATIONSPINNINGSOD59 (TO220AC)• Active power factor correction PIN DESCRIPTION • Half-bridge lighting ballasts• Half-bridge/ full-bridge switched 1cathode mode power supplies.2anode The BYC8-600 is supplied in the SOD59 (TO220AC) conventional tabcathodeleaded package.LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT V RRM Peak repetitive reverse voltage -600V V RWM Crest working reverse voltage -600V V R Continuous reverse voltage T mb ≤ 110 ˚C-500V I F(AV)Average forward currentδ = 0.5; with reapplied V RRM(max);-8A T mb ≤ 82 ˚CI FRM Repetitive peak forward current δ = 0.5; with reapplied V RRM(max);-16A T mb ≤ 82 ˚CI FSMNon-repetitive peak forward t = 10 ms -55A current.t = 8.3 ms-60A sinusoidal; T j = 150˚C prior to surge with reapplied V RWM(max)T stg Storage temperature-40150˚C T jOperating junction temperature-150˚CTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONS MIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 2.2K/W mounting baseR th j-aThermal resistance junction to in free air.-60-K/Wambient1tab2Philips Semiconductors Product specificationRectifier diodeBYC8-600ultrafast, low switching lossELECTRICAL CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT V F Forward voltage I F = 8 A; T j = 150˚C - 1.4 1.85V I F = 16 A; T j = 150˚C - 1.7 2.3V I F = 8 A;- 2.0 2.8V I R Reverse current V R = 600 V-9150µA V R = 500 V; T j = 100 ˚C- 1.1 3.0mA t rr Reverse recovery time I F = 1 A; V R = 30 V; dI F /dt = 50 A/µs -3052ns t rr Reverse recovery time I F = 8 A; V R = 400 V;-19-ns dI F /dt = 500 A/µs t rr Reverse recovery time I F = 8 A; V R = 400 V;-3240ns dI F /dt = 500 A/µs; T j = 125˚C I rrm Peak reverse recovery current I F = 8 A; V R = 400 V;- 1.5 5.5A dI F /dt = 50 A/µs; T j = 125˚C I rrm Peak reverse recovery current I F = 8 A; V R = 400 V;-9.512A dI F /dt = 500 A/µs; T j = 125˚C V frForward recovery voltageI F = 10 A; dI F /dt = 100 A/µs-810VPhilips Semiconductors Product specificationRectifier diodeBYC8-600ultrafast, low switching lossPhilips Semiconductors Product specificationRectifier diodeBYC8-600ultrafast, low switching lossPhilips Semiconductors Product specificationRectifier diodeBYC8-600ultrafast, low switching lossMECHANICAL DATANotes1. Refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification Rectifier diode BYC8-600 ultrafast, low switching lossDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。

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Features
2.5V or 3.3V Operation Clipped Sinewave Output Logic Sub-Miniature 3.2x5.0mm SMT Package Frequency Stabilities Available:
±0.50ppm, ±1.00ppm or ±2.00ppm Temperature Ranges Available:
Model Number TCXO / VCTCXO Supply Voltage Frequency Stability Temperature Range
M45G TCXO 2.5Vdc
M47G TCXO 2.5Vdc
M75G TCXO 3.3Vdc
±2.0ppm 0 to 70°C
M85G VCTCXO 2.5Vdc
1
Voltage Control or N/C
2
N/C
3
Do not connect
4
Ground
5
Output
6
N/C
7
Do not connect
8
Supply, Vcc
Ordering Information
M
7
7
F - 010.0M
Type: Precision
TCXO VCTCXO 3.2x5mm
M48G TCXO 2.5Vdc
M78G TCXO 3.3Vdc
±2.0ppm -30 to 85°C
M88G VCTCXO 2.5Vdc
M98G VCTCXO 3.3Vdc
Note: 1) Frequency stability vs. change in temperature. [±(Fmax – Fmin)/2.Fo].