IRFSL11N50A中文资料

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TJ ≤ 175°C
2

元器件交易网
IRFSL11N50A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
Typ.
––– –––
Max.
0.75 40
Units
°C

1
9/2/99
元器件交易网
IRFSL11N50A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
D
VDSS = 500V
G S
RDS(on) = 0.55Ω ID = 11A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
3
元器件交易网
IRFSL11N50A
100000
10000
VGS , Gate-to-Source Voltage (V)
V GS C is s C rs s C os s
= = = =
0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.55 Ω VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 6.6A 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V 51 ID = 11A 12 nC VDS = 400V 23 VGS = 10V, See Fig. 6 and 13 ––– VDD = 250V ––– ID = 11A ns ––– RG = 9.1Ω ––– RD = 22Ω,See Fig. 10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time
Min. 500 ––– ––– 2.0 6.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.57 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 34 32 27 4.5 7.5 1426 208 9.6 1954 53 110
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 6.4mH
RG = 25Ω, IAS = 11A. (See Figure 12)
ISD ≤ 11A, di/dt ≤ 185A/µs, VDD ≤ V(BR)DSS,
Max.
11 7.0 44 190 1.3 ± 30 390 11 19 4.1 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
4.5V
1 1 10
0.1 0.1
20µs PULSE WIDTH TJ = 175 ° C
100
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 175 ° C
1.5
TJ = 25 ° C
1
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output C Output Characteristics
100
3.0
ID = 11A
RDS(on) , Drain-to-Source On Resistance (Normalized)
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature

元器件交易网
PD- 91847A
IRFSL11N50A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
20
ID = 11A VDS = 400V VDS = 250V VDS = 100V
16
C , C ap acitanc e (pF )
1000
C iss
12
100
C os s
8
10
C rs s
A
1 10 100 1000
4
1
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds