SiR440_D
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Vishay SiliconixSiR440DPN-Channel 20-V (D-S) MOSFETFEATURES•Halogen-free•TrenchFET ® Gen III Power MOSFET •100 % R g Tested •100 % UIS TestedAPPLICATIONS•Fixed Telecom•High Current dc-to-dc •OR-ingPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)200.00155 at V GS = 10 V 6043.5 nC0.002 at V GS = 4.5 V60Notes:a.Package limited.b.Surface Mounted on 1" x 1" FR4 board.c.t = 10 s.d.See Solder Profile (/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.f.Maximum under Steady State conditions is 54 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameter Symbol Limit UnitDrain-Source Voltage V DS 20VGate-Source Voltage V GS ± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D 60a AT C = 70 °C 60aT A = 25 °C 47b, c T A = 70 °C 37b, cPulsed Drain Current I DM 100Continuous Source-Drain Diode CurrentT C = 25 °C I S 60aT A = 25 °C 5.6b, cSingle Pulse Avalanche Current L = 0.1 mHI AS 50Single Pulse Avalanche Energy E AS 125mJ Maximum Power DissipationT C = 25 °C P D 104W T C = 70 °C 66.6T A = 25 °C 6.25b, c T A = 70 °C 4.0b, cOperating Junction and Storage T emperature Range T J , T stg - 55 to 150°C Soldering Recommendations (Peak Temperature)d, e 260THERMAL RESISTANCE RATINGSParameter Symbol Typical Maximum UnitMaximum Junction-to-Ambientb, f t ≤ 10 s R thJA 1520°C/WMaximum Junction-to-Case (Drain)Steady State R thJC 0.9 1.2Vishay SiliconixSiR440DPNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol T est Conditions Min. T yp.Max.UnitStaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA20V V DS Temperature Coefficient ΔV DS /T J I D = 250 µA 19mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J - 6.3Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.0 2.5V Gate-Source LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 20 V , V GS = 0 V 1µA V DS = 20 V , V GS = 0 V, T J = 55 °C10On-State Drain Current aI D(on) V DS ≥ 5 V , V GS = 10 V 30A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 20 A 0.001250.00155ΩV GS = 4.5 V , I D = 20 A 0.001650.0020Forward T ransconductance a g fsV DS = 10 V, I D = 20 A110SDynamic bInput Capacitance C iss V DS = 10 V , V GS = 0 V , f = 1 MHz6000pFOutput CapacitanceC oss 1720Reverse Transfer Capacitance C rss 720Total Gate Charge Q g V DS = 10 V , V GS = 10 V , ID = 20 A 100150nC V DS = 10 V, V GS = 4.5 V, I D = 20 A 43.566Gate-Source Charge Q gs 13.5Gate-Drain Charge Q gd 12.5Gate Resistance R g f = 1 MHz0.21.02ΩTurn-On Delay Time t d(on) V DD = 10 V , R L = 1.0 ΩI D ≅ 10 A, V GEN = 10 V, R g = 1 Ω1935ns Rise Timet r 816Turn-Off Delay Time t d(off) 52100Fall Timet f 918Turn-On Delay Time t d(on) V DD = 10 V , R L = 1.0 Ω I D ≅ 10 A, V GEN = 4.5 V , R g = 1 Ω4590Rise Timet r 2955Turn-Off Delay Time t d(off) 81150Fall Timet f4890Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C60A Pulse Diode Forward Current a I SM 100Body Diode VoltageV SD I S = 5 A0.72 1.1V Body Diode Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/µs, T J = 25 °C4380ns Body Diode Reverse Recovery Charge Q rr 4080nC Reverse Recovery Fall Time t a 21nsReverse Recovery Rise Timet b22Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageCapacitanceSingle Pulse Power, Junction-to-AmbientSafe Operating Area, Junction-to-AmbientVishay SiliconixSiR440DPTYPICAL CHARACTERISTICS 25°C, unless otherwise noted* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Current Derating*Power, Junction-to-Case Power, Junction-to-AmbientVishay SiliconixSiR440DPTYPICAL CHARACTERISTICS 25°C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as pack age/tape drawings, part marking, and reliability data, see /ppg?68761.Normalized Thermal Transient Impedance, Junction-to-CaseDisclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。