J174中文资料

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This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
−ID = 10 nA; VDS = −15 V
Drain-source ON-resistance −VDS = 0.1 V; VGS = 0
J174 J175 J176 J177
IGSS −IDSX −IDSS
max.
1
1
1 1 nA
max.
1
1
1 1 nA
min. max.
20
7
135 70
2 1.5 mA 35 20 mA
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified Input capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V VGS = VDS = 0 Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Switching times (see Fig.2 + 3) Delay time Rise time Turn-on time Storage time Fall time Turn-off time
RDS on max.
85
125
250
300 Ω
April 1995
2
元器件交易网
Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175; J176; J177
Drain-source ON-resistance −VDS = 0.1 V; VGS = 0
± VDS max.
30
V
VGSO max.
30
V
−IG
max.
50
mA
Ptot −IDSS
max.
min. max.
400
J174
20 135
J175
7 70
J176
2 35
mW
J177 1.5 mA 20 mA
150
°C
THERMAL RESISTANCE From junction to ambient in free air
Rth j-a
=
250
K/W
STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate cut-off current
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN PROJECTION
SOT54
TO-92
SC-43
ISSUE DATE 97-02-28
April 1995
5
元器件交易网
Philips Semiconductors
P-channel silicon field-effect transistors
−VDD
50 Ω Vout
RL
Vin 50 Ω
D.U.T
MBK292
Fig.2 Switching times test circuit.
VGSoff
INPUT
10%
OUTPUT
10%
90% tf ts
90%
10%
90%
tr
td
MBK293
Fig.3 Input and output waveforms; td + tr = ton ; ts + tf = toff.
Product specification
J174; J175; J176; J177
DEFINITIONS
Data sheet status
Objective specification Preliminary specification Product specification Short-form specification
QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation
up to Tamb = 50 °C
Drain current −VDS = 15 V; VGS = 0
± VDS VGSO VGDO −IG
up to Tamb = 50 °C
Ptot
Storage temperature range
Tstg
Junction temperature
Tj
max. max. max. max.
max.
max.
30
V
30
V
30
V
50
mA
400
mW
−65 to +150 °C
V(BR)GSS min.
VGS off
min. max.
30 30 30 30 V
5
3
10
6
1 0.8 V 4 2.25 V
RDSon
max.
85 125 250 300 Ω
April 1995
3
元器件交易网
Philips Semiconductors
P-channel silicon field-effect transistors
April 1995
4
元器件交易网
Philips Semiconductors
P-channel silicon field-effect transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
VGS = 20 V; VDS = 0 Drain cut-off current
−VDS = 15 V; VGS = 10 V Drain current
−VDS = 15 V; VGS = 10 V
Gate-source breakdown voltage IG = 1 µA; VDS = 0
Gate-source cut-off voltage
April 1995
元器件交易网
Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175; J176; J177
DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
J174; J175; J176; J177 P-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134)