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NM24W16中文资料

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NM24W02
3 4 6 5 3 4
NM24W04
6 5
NM24W08
3 4
NM24W16
3 4
DS500074-2
DS500074-3
DS500074-4
DS500074-18
Top View See Package Number N08E (N), M08A (M8), and MTC08 (MT8)
General Description
The NM24Wxx devices are 2048/4096/8192/16,384 bits, respectively, of CMOS non-volatile electrically erasable memory. These devices conform to all specifications in the IIC 2-wire protocol and are designed to minimize device pin count, and simplify PC board layout requirements. The entire ememory can be disabled (Write Protected) by connecting the WP pin to VCC. The memory then becomes unalterable unless WP is switched to VSS. This communications protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s). The Standard IIC protocol allows for a maximum of 16K of EEPROM memory which is supported by Fairchild's family in 2K, 4K, 8K, and 16K devices, allowing the user to configure the memory as the application requires with any combination of EEPROMs. Fairchild EEPROMs are designed and tested for applications requiring high endurance, high reliability and low power consumption.
Product Specifications Absolute Maximum Ratings
Ambient Storage Temperature All Input or Output Voltages with Respect to Ground Lead Temperature (Soldering, 10 seconds) ESD Rating –65°C to +150°C 6.5V to –0.3V +300°C 2000V min.
ICCA ISB ILI ILO VIL VIH VOL Active Power Supply Current Standby Current for L Standby Current for LZ Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage IOL = 3 mA fSCL = 100 kHz VIN = GND or VCC VIN = GND or VCC VIN = GND to VCC VOUT = GND to VCC –0.3 VCC x 0.7
Limits Typ (Note 1)
0.2 10 0.1 0.1
Units Max
1.0 50 1 1 VCC x 0.3 VCC + 0.5 0.4 mA µA µA µA V V V
Low VCC (2.7V to 5.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Min
Operating Conditions
Ambient Operating Temperature NM24Wxx NM24WxxE NM24WxxV Positive Power Supply NM24Wxx NM24WxxL NM24WxxLZ 0°C to +70°C -40°C to +85°C -40°C to +125°C 4.5V to 5.5V 2.7V to 4.5V 2.7V to 4.5V
Block Diagram
VCC VSS WP START CYCLE SDA START STOP LOGIC CONTROL LOGIC SLAVE ADDRESS REGISTER & COMPARATOR LOAD A2 A1 A0 WORD ADDRESS COUNTER INC 16/ 32/ 64/ 128/ E2PROM ARRAY H.V. GENERATION TIMING &CONTROL
元器件交易网
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect
Connection Diagrams
Dual-In-Line Package (N), SO Package (M8), and TSSOP Package (MT8)
Temp. Range
Voltage Operating Range
Density
2
NM24Wxx Rev. C.2

元器件交易网
NM24Wxx 2K/4K/8K/16K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect
SCL
XDEC
0/1/2/3 4 4
16
R/W
YDEC
Device Address Bits CK DIN
8 DOUT
DATA REGISTER
DS500074-1
© 1999 Fairchild Semiconductor Corporation NM24Wxx Rev. C.2
1

Pin Names
A0,A1,A2 VSS SDA SCL WP VCC NC Device Address Inputs Ground Data I/O Clock Input Write Protect Power Supply No Connect
Ordering Information NM 24 W XX LZ E XX
Features
s Hardware Write Protect for entire memory s Low Power CMOS 200µA active current typical 10µA standby current typical 1µA standby typical (L) 0.1µA standby typical (LZ) s IIC Compatible interface — Provides bidirectional data transfer protocol s Sixteen byte page write mode — Minimizes total write time per byte s Self timed write cycle — Typical write cycle time of 6ms s Endurance: 1,000,000 data changes s Data retention greater than 40 years s Packages available: 8-pin DIP, 8-pin SO, and 8-pin TSSOP s Available in three temperature ranges - Commercial: 0° to +70°C - Extended (E): -40° to +85C - Automotive (V): -40° to +125°C
Standard VCC (4.5V to 5.5V) DC Electrical Characteristics
Symbol Parameter Test Conditions Min
ICCA ISB ILI ILO VIL VIH VOL Active Power Supply Current Standby Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage IOL = 3 mA fSCL = 100 kHz VIN = GND or VCC VIN = GND to VCC VOUT = GND to VCC –0.3 VCC x 0.7
A0 A1 A2 VSS 1 2 8 7 VCC WP SCL SDA NC A1 A2 VSS 1 2 8 7 VCC WP SCL SDA NC NC A2 VSS 1 2 8 7 6 5 VCC WP SCL SDA NC NC NC VSS 1 2 8 7 6 5 VCC WP SCL SDA

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FM24W256-GTR;FM24W256-G;中文规格书,Datasheet资料

FM24W256-GTR;FM24W256-G;中文规格书,Datasheet资料


Rev. 2.0 Jan. 2012 /
Page 1 of 13
FM24W256 - 256Kb Wide Voltage I2C F-RAM
Counter
Address Latch
4,096 x 64 FRAM Array
8 SDA Serial to Parallel Converter
Description
The FM24W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM24W256 is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24W256 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24W256 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24W256 is available in industry standard 8-pin SOIC package using a familiar two-wire protocol. It is guaranteed over an industrial temperature range of -40°C to +85°C.
FM24C16A-AT24C16中文资料

FM24C16A-AT24C16中文资料


第 1页
Figure 1. Block Diagram
引脚定义
名称 Ｉ／Ｏ
SDA Ｉ／Ｏ
ＳＣＬ 输入
WP 输入
VDD VSS NC
电源 电源 空脚
描述
串行地址\数据管脚：这个双向引脚用来传送地址和输入输出数据。这是一个开 漏输出，以便与其它器件通过”线或”并接在双线总线上。输入缓冲区集成施密 特触发器用以提高抗干扰性能，输出驱动器具有下降沿斜率控制。此端口必须 外加上拉电阻。 串行时钟：两线制总线的串行时钟输入。数据在时钟的下降沿移出器件，在时 钟的上升沿移入器件，时钟端口同样具有施密特触发器用以提高抗干扰性能。
对器件进行轮循以等待一个就绪状态，因为器
件是以总线速度进行写操作， 一个新的总线
转输将数据移入器件的同时，一个写操作已经
完成，更为详尽的描述将在下面的接口界面章
ห้องสมุดไป่ตู้
节进行描述。
Figure 2. Typical System Configuration
需要指出的是，ＦＭ２４Ｃ１６Ａ没有类似内部电源管
图５描述的是单字节和多字节的操作。
第 5页
Figure 5. Single Byte Write
Figure 6. Multiple Byte Write
读操作
四种正确操作方法如下：
有两种基本类型的读操作：当前地址读操作 1、主机在第9个时钟不发应答信号，在第十个时
和随机地址读操作。对当前地址进行读操作
开始
当主机把SDA从高电平拉为低电平，同时SCL 信号为高电平时被认为是开始信号，所有的读 写操作均由开始信号开始。任何时候发布一个 开始信号，一个进行中的操作都会被中止。使 用开始信号中止一个操作的同时，FM24C04A 也会处于开始一个新操作的就绪状态。在操作 过程中，如果电压降低到规定电压的最低值以 下时，ＦＭ２４Ｃ１６Ａ执行另外一个的操作之前，会 认为出现了一个开始信号。
440R-N23114中文资料

440R-N23114中文资料


Pulse Frequency Scanning Frequency Scanning Angle Resolution Point Resolution Vibration Shock
Optics (Co-axial Transmitter and Receiver Optics) Laser Beam Divergence Focal Length Lens Diameter Power Supply Operating Voltage Switch on Current Power Consumption Material Enclosure Rating Weight Operating Temperature Storage Temperature Interfaces Data Interfaces to Computer Signal Outputs for Warning Field, OSSD 1, OSSD 2
Pin # 1 2 3 4 5 6 7 8
Signal 24V GND24 OSSD 2.1 OSSD 2.2 OSSD 1.1 OSSD 1.2 Warning field 1.1 Warning field 1.2 FE
Explanation 24V DC supply Ground Relay contact for protective field 2.1 Relay contact for protective field 2.2 Relay contact for protective field 1.1 Relay contact for protective field 1.2 Relay contact for warning field 1.1 Relay contact for warning field 1.2 Functional Ground (Shield)
74HC164D中文资料 参数及应用

74HC164D中文资料 参数及应用

74HC164D中文资料参数SN54HC164,/SN74HC164是8位移位寄存器，当其中一个（或二个）选通串行输入端的低电平禁止进入新数据，并把第一个触发器在下一个时钟脉冲来后复位到低电平时，门控串行输入端（A 和B）可完全控制输入数据。

一个高电平输入后就使另一个输入端赋能，这个输入就决定了第一个触发器的状态。

虽然不管时钟处于高电平或低电平时，串行输入端的数据都可以被改变，但只有满足建立条件的信息才能被输入。

时钟控制发生在时钟输入由低电平到高电平的跃变上。

为了减小传输线效应，所有输入端均采用二极管钳位。

功能表：Inputs输入Outputs输出CLRCLK A B QA QB ...QHL X X X L L LH L X X QAQBQH0H↑H H H QAnQGnH↑L X L QAnQGnH↑X L L QAnQGnH=高电平（稳定态）L=低电平（稳定态）×=不定↑=从低电平转换到高电平QA0…QH0=在稳定态输入条件建立前QA…QH 的相应电平QAn…QHn=在最近的时钟输入条件（↑）建立前QA…QH 的相应电平，表示移位一位图1 逻辑图（正逻辑）图2 引脚图Absolute Maximum Ratings绝对最大额定值Supply voltage range, 电源电压范围VCC–0.5 V to 7V Input clamp current, 输入钳位电流IIK (VI < 0 or VI > VCC) (seeNote 1)±20 mA Output clamp current,输出钳位电流IOK (VO < 0 or VO > VCC) (seeNote 1)±20 mA Continuous output current,连续输出电流IO (VO = 0 to VCC)±25 mA Continuous current through 连续通过电流VCC or GND±50 mA封装热阻thermal impedance, θJA (see Note 2):D 封装86℃/W N 封装80℃/W NS 封装76℃/W PW 封装113℃/WStorage temperature range, Tstg储存温度范围–65℃ to 150℃DC SPECIFICATIONS直流电气规格表：符号Parameter 参数SN54HC164SN74HC164最小典型最大最小典型最大VCCSupply Voltage 电源电压256256图3 参数测量信息图4 typical clear, shift, and clear sequence典型清除、移位和清除时序应用电路：图5 LCD驱动电路图6 LED驱动电路74HC164中文资料参数时间：2016-06-15 来源：资料室作者：编号:颖展电子SN54HC164,/SN74HC164是8位移位寄存器，当其中一个（或二个）选通串行输入端的低电平禁止进入新数据，并把第一个触发器在下一个时钟脉冲来后复位到低电平时，门控串行输入端（A 和B）可完全控制输入数据。