BY229X-200中文资料

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-
- 1500 V
-
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs Rth j-a
Thermal resistance junction to heatsink Thermal resistance junction to ambient
both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
Cisol
Capacitance from pin 1 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
MIN.
-
TYP.
100 0.5 50
MAX.
135 0.7 60
UNIT
ns µC A/µs
September 1998
2
Rev 1.200
元器件交易网
Philips Semiconductors
Rectifier diodes fast, soft-recovery
September 1998
3
0.1 1
10
100
-dIF/dt (A/us)
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
Rev 1.200
元器件交易网
Philips Semiconductors
Rectifier diodes fast, soft-recovery
BY329
Product specification
BY229F, BY229X series
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD
tp
D
=
tp T
0.001 1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
SOD100
SOD113
PIN
DESCRIPTION
case
1 cathode
case
2 anode
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
元器件交易网
Philips Semiconductors
Rectifier diodes fast, soft-recovery
Product specification
BY229F, BY229X series
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab
Tj = 150 C Tj = 25 C
20
BY229F
10
typ
max
0
0
0.5
1
1.5
2
VF / V
Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj
Qs / uC 10
Tj = 150 C Tj = 25 C
-
8
A
Ths ≤ 83 ˚C
sinusoidal; a = 1.57;
-
7
AThsΒιβλιοθήκη ≤ 90 ˚CIF(RMS)
RMS forward current
-
IFRM
Peak repetitive forward current t = 25 µs; δ = 0.5;
-
Ths ≤ 83 ˚C
IFSM
Peak non-repetitive forward t = 10 ms
CONDITIONS
Visol
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and
both terminals to external dustfree
heatsink
Visol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
Rectifier diodes fast, soft-recovery
Product specification
BY229F, BY229X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER
-
current
t = 8.3 ms
-
11
A
16
A
60
A
66
A
sinusoidal; Tj = 150 ˚C prior to surge; with
I2t
I2t for fusing
reapplied VRWM(max)
t = 10 ms
-
18
A2s
Tstg
Storage temperature
Tj
BY229F, BY229X series
10.2 max 5.7 max
3.2 3.0
0.9 0.5
4.4 4.0
seating plane
SYMBOL
k 1
QUICK REFERENCE DATA
VR = 200 V/ 400 V/ 600 V/800 V
a
IF(AV) = 8 A
2
IFSM ≤ 60 A
trr ≤ 135 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
1
BY329
IF = 10 A 10 A
2A 1A 2A 1A
0
150
0
2
4
6
8
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
September 1998
4
Rev 1.200
元器件交易网
Philips Semiconductors
Rectifier diodes fast, soft-recovery
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
Product specification
CONDITIONS
with heatsink compound without heatsink compound in free air.
MIN.
-
TYP.
55
MAX.
4.8 7.2
-
UNIT
K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER
Operating junction temperature
-40
150
˚C
-
150
˚C
1. Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
元器件交易网
Philips Semiconductors
trr Qs dIR/dt
Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current
CONDITIONS IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs
VF
Forward voltage
IR
Reverse current
CONDITIONS IF = 20 A VR = VRWM; Tj = 125 ˚C
MIN.
-
TYP. MAX. UNIT
1.5 1.85 V 0.1 0.4 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER