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HC1503 SOP8

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Features
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
30V 13A 15mΩ(Max) 20mΩ(Max)
SOP8
DD D D
G
S SS
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
td(off)
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
Vgs
+
Vdd
VDC
-
Id
DUT Vgs
BVDSS I AR
Vds +
Diode Recovery Test Circuit & Waveforms
Td(off)
Tf Toff
Fig.7 Switching Time Waveform
10%
IAS
VGS
Fig.8 EAS Waveform
Hutchip Semiconductor Co.,Ltd
4 of 6
V1.0
HC1503
+
VDC
-
Vgs Ig
Vds
Vgs Rg Vgs
Vds Id Vgs Rg Vgs
HC1503
30V N-Channel MOSFET
General Description
The HC1503 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Hutchip Semiconductor Co.,Ltd
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V1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
HC1503
Normalized On Resistance (mΩ)
ID , Continuous Drain Current (A)
1.050(BSC)
0°
8°
Dimensions In Inches
Min
Max
0.053
0.068
0.004
0.009
0.052
0.059
0.024
0.027
0.016
0.018
0.009
0.010
0.186
0.200
0.229
0.244
0.146
0.161
0.050(BSC)
0.010
0.019
Normalized Gate Threshold Voltage (V)
Normalized Thermal Response (RΘJA)
TC , Case Temperature (℃)
Fig.1 Continuous Drain Current vs. TC
TJ , Junction Temperature (℃)
0.019
0.031
0.041(BSC)
0°
8°
Hutchip Semiconductor Co.,Ltd
6 of 6
V1.0
BVDSS IDSS IGSS VGS(th)
Drain-Source Breakdown Voltage VGS=0V ID=250μA 30
Zero Gate Voltage Drain Current
VDS=30V,VGS=0V
Gate-Body Leakage Current
VGS=±20V,VDS=0V
VDS=15V,VGS=0V, F=1.0MHz
V
1
μA
±100 nA
1.0 1.5
V
12
15
mΩ
14
20
mΩ
620
pF
85
pF
60
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-Off Delay Time
Parameter
PD TJ,TSTG
Symbol
2.1 -55 To 150
Typ
Max
Thermal Resistance junction-case
RθJc
7
Thermal Resistance unction-to-Ambient
RθJA
62
Hutchip Semiconductor Co.,Ltd
DUT
Q rr = - Idt Vgs
Vds Isd
L
Isd
IF
t rr
dI/dt
Vg
-
Vds
I RM Vdd
Hutchip Semiconductor Co.,Ltd
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V1.0
SOP8 PACKAGE INFORMATION
HC1503
Symbol
A A1 A2 A3 b c D E E1 e h L L1 θ
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VSD
Diode Forward Voltage
Rg
Gate resistance
VGS=10V VDS=15V RL=2.6Ω RGEN=3Ω
Gate Charge Test Circuit & Waveform
+ Vds
VDC
DUT -
Vgs
10V Qgs
Qg Qgd
Resistive Switching Test Circuit & Waveforms
RL
Charge
Vds
DUT
+ Vdd
VDC
-
90% 10%
Vgs
td(on) tr ton
Dimensions In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.300
1.500
0.600
0.700
0.390
0.480
0.210
0.260
4.700
5.100
5.800
6.200
3.700
4.100
1.270(BSC)
0.250
0.500
0.500
0.800
Parameter
Symbol
Drain-Source Voltage
VDS
Maximum 30
Gate-Source Voltage
VGS
±20
TC=25°C
ID
13
Drain Current-Continuous
TC=100°C
ID
8.5
Drain Current – Pulsed
IDM
52
Maximum Power Dissipation Junction and Storage Temperature Range Thermal Characteristics
VDS=15V,ID=3A, VGS=4.5V
VGS=0V,ISD=1A VGS=0V, VDS=0V,
F=1MHz
2.6
nS
8.5
nS
18
nS
5
nS
7.1
nC
1.4
nC
1.5
nC
0.72 1.3
V
2
Ω
Note： 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.
Fig.2 Normalized RDSON vs. TJ
VGS , Gate to Source Voltage (V)
TJ , Junction Temperature (℃)
Fig.3 Normalized Vth vs. TJ
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
1 of 6
Units V V A A A W ℃
Unit ℃ /W ℃ /W
V1.0
Electrical Characteristics (TJ=25℃ unless otherwise noted)
HC1503
Symbol Parameter
Condition
Min Typ Max Unit
STATIC PARAMETERS
Hutchip Semiconductor Co.,Ltd

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较全的小功率三极管参数+直插式半导体三极管(打印版)

较全的小功率三极管参数+直插式半导体三极管(打印版)


管脚排列 封装 Lead Package Arranging / TO-92 140 TO-92L(M) 140 TO-126F 250 TO-92 140 TO-92L(M) 140 TO-126F / TO-92 / TO-92 200 TO-92L(M) 50 TO-92 160 TO-126 200 TO-92 200 TO-92 100 TO-92 50 TO-92 100 TO-92 100 TO-92 EBC ECB ECB ECB ECB ECB ECB ECB ECB EBC ECB ECB ECB ECB EBC ECB EBC
50
30
25
4
0.1
30
0.2
15
1.5
20Biblioteka 20012.5 12.5300 TO-92
ECB
900 1000 830 830 50 -50
25 250 -250 -22 30 25 40 30 40 55 50 30 -60 -50 -30
25 250 -250 -22 30 20 30 20 30 50 45 30 -45 -45 -30
ECB ECB ECB ECB ECB ECB EBC ECB ECB ECB CBE CBE EBC CBE CBE
1000 -4000 200 100
900 1000 800 1000 100 400 400 625 625 20 100 100 100 100
KSD471A 3DG471A 2SC535 2SC536 3DG535 3DG536
3DG380TM M 2SC383T 3DG383TM M 2SC388AT 3DG388AT
300
50
35
FNK-TECH产品选型表

FNK-TECH产品选型表


12 12 12 10 10 10 12 10 10 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 10 10 10 10 12 12 12 12 12 10 20 20 20 20 20 20 20 20 20 12 20 20ห้องสมุดไป่ตู้20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 25 20 20 20 20 20 20 20 20 20 25 25 25 25 20 20 20 20 20 20 20 20 20 20 25 25 20 20 20 20 20 20 20 20 20 20 20 20 20
FNK-TECH Product Major Information N/PVoltage Product Name Assembly FNK2302A FNK2302 FNK2310 FNK2312A FNK8205 FNK6A FNK06E FNK8205A FNK10N25S FNK10N25B FNK2010E FNK10N25V FNK10N25VN-20V FNK10N25A FNK9926 FNK9928 FNK4420 FNK4402 FNK06N02C FNK10N02C FNK06N02D FNK09N02D FNK8601 FNK8064 FNK10N02 FNK8205B FNK2012 FNK3420 FNK1012E FNK2011E FNK2014ES FNK28e FNK8604 N-20V（ESD） FNK10N25E FNK0203E FNK0203EA FNK0203EB FNK3416 FNK30H80 FNK30H80A FNK30H150 FNK30H160 FNK08N03C FNK08N03D FNK4838 FNK4420 FNK3400 FNK3404 FNK2304 FNK4032 N-40V N-50V FNK4080K FNK4025 BSS138 FNK55H11 FNK55H12 2N7002 2N7002A FNK6003 FNK6005S FNK6005R FNK6020K FNK6020L FNK6020I FNK6050I N-60V FNK6050 FNK6050K FNK6075K FNK6075 FNK60H10 FNK60H12 FNK60H15 FNK6890 FNK7075K N-70V FNK7075 FNK7080 FNK7190 FNK7559K FNK7560K FNK7578 FNK7580 FNK7580D FNK7580T N-75V FNK75H11 FNK75H14 FNK75H21T FNK75H21 FNK75H21B FNK75H26T FNK75H35T FNK8050 FNK8060 FNK8060D N-80V FNK75N08D FNK75N08 FNK80H11 FNK80H11D FNK8580 FNK22001D FNK22001A FNK0128D N-85100V FNK0157A FNK0157 FNK0157T FNK0159 FNK01H10 FNK01N08 FNK1540K N-50V（ESD） BSS138K N-55V N-60V SOT-23 SOT-23 SOT-23 SOT-23 SOT23-6 SOT23-6 SOT23-6 TSSOP-8 TSSOP-8 TSSOP-8 TSSOP-8 SOP-8 SOP-8 SOP-8 SOP-8 SOP-8 SOP-8 SOP8 TO-251 TO-251 TO-252 TO-252 FDFN3.3*3.3 FDFN3.3*3.3 PDFN5*6 TSSOP-8 SOP-8 SOT23 SOT-523 TSSOP-8 SOP-8 TSSOP-8 FDFN3.3*3.3 TSSOP-8 DFN2X3-6L DFN2X3-6L DFN2X3-6L SOT23 TO-220 TO-262 TO-220 TO-220 TO-251 TO-252 SOP-8 SOP-8 SOT-23 SOT-23 SOT-23 TO-220 TO-252 TO-220 SOT-23 SOT-23 TO-220 TO-220 SOT-23 SOT-23 SOT-23 SOT23-3L SOP-8 SOT-223 TO-252 TO-251S TO-251 TO-251 TO-220 TO-252 TO-252 TO-220 TO-220 TO-220 TO-220 TO-220 TO-252 TO-220 TO-220 TO-220 TO-252 TO-252 TO-220 TO-220 TO-263 TO-247 TO-220 TO-220 TO-247 TO-220 TO-220 TO-247 TO-247 TO-220 TO-220 TO-263 TO-263 TO-220 TO-220 TO-263 TO-220 TO-263 TO-220 TO-263 TO-220 TO-220 TO-247 TO-220 TO-220 TO-220 TO-252 BVDSSMin(V) ID(A) 25℃ 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 50 50 55 55 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 68 70 70 70 71 75 75 75 75 75 75 75 75 75 75 75 75 75 75 80 80 80 85 80 80 80 85 85 85 100 100 100 100 100 100 90 150 6.5 80 80 145 150 80 80 80 11 14 5.8 5.8 3.6 190 80 210 0.22 0.22 110 120 0.115 0.115 0.3 3 4.5 5 20 20 20 50 50 50 75 75 100 120 150 90 75 75 80 90 59 60 78 80 80 80 110 140 210 210 210 210 260 350 50 60 60 92 92 105 105 80 210 210 28 57 57 57 59 100 80 40 1.25 110 110 125 130 55 55 55 2 2.5 1.4 1.4 1.7 1.47 80 310 0.35 0.35 180 200 0.2 0.2 0.35 1.7 2 2.2 30 30 30 80 80 80 100 110 170 210 220 130 100 110 150 170 130 140 160 170 170 180 210 260 330 310 310 330 385 460 100 130 130 139 139 200 200 170 310 310 150 160 170 180 180 200 220 140 3 3.5 5 5 4 5 6 6 7 7 8 7 13 13 6 9 14 15 50 100 50 90 7 8 100 6 12 6 0.6 11 14 7 8 13 7 8 PW (W) 25℃ 1 1 1.25 1.25 1.25 1.25 1.5 1.5 1.5 1.5 2 1.5 2 2 2 2 2 2 80 80 80 80 1.4 2 83 1.5 2.5 1.25 1 1.6 3 1.5 2 2 1.5 2
各种三极管参数及用途

各种三极管参数及用途


备注栏中“*”表示带阻尼，“--”表示不
2N3708 2N3716 2N3725 2N3740 2N3741 2N3742 2N3767 2N3771 2N3772 2N3773 2N3792 2N3819 2N3820 2N3821 2N3824 2N3866 2N3904 2N3906 2N3909 2N3958 2N3963 2N3972 2N4001 2N4033 2N4036 2N409 2N4126 2N4220 2N4236 2N427 2N428 2N4286 2N4287 2N4291 2N4302 2N4347 2N4348 2N4351 2N4391 2N4392 2N4393 2N4401 2N4403 2N4416 2N44206248 2N6284 2N6287 2N6292 2N6356 2N6422 2N6427 2N6476 2N6488 2N6491 2N6517 2N6520 2N6547 2N6556 2N6609 2N6660 2N6661 2N6675 2N6678 2N6716 2N6718 2N6725 2N6728 2N697 2N7002 2N914 2N918 2SA1006B 2SA1009 2SA1011 2SA1013 2SA1015 2SA1016 2SA1017 2SA1018 2SA1020 2SA1027 2SA1029 2SA1034 2SA1037 2SA1048 2SA1049 2SA1061 2SA1062 2SA1065
SI-P 80V 1A 30W SI-N 80V 1A 30W SI-N 150V 20A 140W 0.5us SI-N 55V 0.4A 4W 5mA SI-N 40V 0.5A 2.5W 1.5GHz P-FET 30V 5mA 150E Up<4V SI-N 100V 2A 10W SI-N 20V 50mA 0.2W >1GHz SI-N 80V 4A 40W 2MHz SI-N 375V 5A 100W >2MHz SI-N 80V 4A 36W >0.8MHz N-DARL 40V 0.3A 0.4W B>7K SI-N 100V 2A 10W AFSWITCH SI-P 100V 2A 10W AFSWITCH SI-P 160V 0.6A 0.31W SI-P 350V 1A 10W 15MHz N-FET 25V 0.4A 0.3W 7E N-FET 25V 1mA Up<6V N-FET 25V 2.9mA UNI P-FET 40V 5mA Up<6V GEN.P P-FET 40V 9mA 0.31W P-FET 40V 16mA Up<9V GEN. N-FET 25V 5mA 0.31W P-FET 25V 4mA Up<4V SI-N 180V 0.6A 0.31W VID. SI-N 36V 0.6A 3W 175MHz N-FET 30V 10mA 310mW SI-N 150V 30A 140W 0.5us SI-P 120V 1A 1W SI-N 120V 1A 1W >30MHz SI-P 80V 50A 200W SI-N 80V 50A 300W >2MHz SI-N 30V 0.05A 0.7W >900MHz SI-P 15V 50mA 625mW >850MHz SI-P 80V 10A 150W >4MHz SI-N 80V 10A 150W >4MHz SI-N 60V 10A 150W >4MHz SI-P 80V 25A 200W AFPOWSW SI-N 80V 25A 200W >4MHz SI-P 140V 16A 200W 1MHz P-DARL+D 60V 12A 100W SI-N 100V 12A 150W SI-N 36V 5A PQ=30W 175MHz SI-N 70V 10A 75W AFPOWSWITCH SI-N 70V 10A 75W AFPOWSWITCH SI-P 60V 7A 40W 10MHz SI-P 45V 4A 40W
AMC1203中文资料

AMC1203中文资料

Copyright © 2008, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
PARAMETER Supply voltage, VDD1 to GND1 or VDD2 to GND2 Analog input voltage at VIN+, VIN– Input current to any pin except supply pins Continuous total power dissipation Maximum junction temperature, TJ Human body model (HBM) JEDEC standard 22, test method A114-C.01 Electrostatic discharge (ESD), all pins Charged device Model (CDM) JEDEC standard 22, test method C101 Machine Model (MM) JEDEC standard 22, test method A115A (1) AMC1203 –0.3 to +6 GND1 – 0.3 to VDD1 + 0.3 ±10 +150 ±3000 ±1500 ±200 UNIT V V mA °C V V V