当前位置：文档之家 › IPS1021RPBF;IPS1021PBF;IPS1021SPBF;IPS1021RTRRPBF;IPS1021RTRLPBF;中文规格书,Datasheet资料

IPS1021RPBF;IPS1021PBF;IPS1021SPBF;IPS1021RTRRPBF;IPS1021RTRLPBF;中文规格书,Datasheet资料

  • 格式：pdf
  • 大小：321.90 KB
  • 文档页数：11

Data Sheet No. PD60236_CIPS1021(S )(R )PbFINTELLIGENT POWER LOW SIDE SWITCHFeatures• Over temperature shutdown• Over current shutdown• Active clampe • Low current & logic lev l input On/Off for EMI )PbF is a three terminal Intelligent • ESD protection• Optimized Turn •Diagnostic on the input currentDescriptionThe IPS1021(S)(R Power Switch (IPS) that features a low side MOSFET with over-current, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 35A. The device restartsonce the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.Product SummaryRds(on) 25mΩ (max.) Vclamp 36VIshutdown 35A (typ.)PackagesTO-220 D²Pak D-PakIPS1021PbF IPS1021SPbF IPS1021RPbF Typical ConnectionAbsolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified).Symbol Parameter Min. Max. Units Vds Maximum drain to source voltage -0.3 36 VVds cont. Maximum continuous drain to source voltage - 28 VVin Maximum input voltage -0.3 6 VIsd cont. Max. diode continuous current (limited by thermal dissipation) ⎯ 4.5 A Maximum power dissipation (internally limited by thermal protection)Rth=5°C/W IPS1021 ⎯25 Rth=40°C/W IPS1021S1” sqr. footprint ⎯ 3.1 WPdRth=50°C/W IPS1021R1” sqr. footprint ⎯ 2.5 Electrostatic discharge voltage (Human body) C=100pF, R=1500ΩBetween drain and source ⎯ 4Other combinations ⎯ 3Electrostatic discharge voltage (Machine Model) C=200pF,R=0ΩBetween drain and source ⎯0.5ESDOther combinations ⎯0.3kVTj max. Max. storage & operating temperature junction temperature -40 150 °C Tsoldering Lead soldering temperature (10 seconds) ⎯300 °C Thermal CharacteristicsSymbol Parameter Typ.Max.Units Rth1 Thermal resistance junction to ambient IPS1021TO-220 free air 50 ⎯Rth2 Thermal resistance junction to case IPS1021 TO-220 2.6 ⎯Rth1 Thermal resistance junction to ambient IPS1021S D²Pak std. footprint 60 ⎯Rth2 Thermal resistance junction to ambient IPS1021S D²Pak 1” sqr. footprint 40 ⎯Rth3 Thermal resistance junction to case IPS1021S D²Pak 2.6⎯Rth1 Thermal resistance junction to ambient IPS1021R D-Pak std. footprint 70 ⎯Rth2 Thermal resistance junction to ambient IPS1021R D-Pak 1” sqr. footprint 50 ⎯Rth3 Thermal resistance junction to case IPS1021R D-Pak 2.6⎯°C/WRecommended Operating ConditionsThese values are given for a quick design. For operation outside these conditions, please consult the application notes.Symbol Parameter Min.Max.Units VIH High level input voltage 4.5 5.5VIL Low level input voltage 0 0.5Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5VRth=5°C/WIPS1021 ⎯13.5Rth=40°C/W IPS1021S1” sqr. footprint ⎯ 4.8IdsRth=50°C/W IPS1021R1” sqr. footprint ⎯ 4.3ARin Recommended resistor in series with IN pin to generate a diagnostic 0.5 10 kΩMax L Max. recommended load inductance (including line inductance) (1) ⎯20 µH Max F Max. frequency (switching losses = conduction losses) ⎯500 Hz Max t rise Max. input rising time ⎯ 1 µs (1) Higher inductance is possible if maximum load current is limited - see figure 11Static Electrical CharacteristicsTj=25°C, Vcc=14V (unless otherwise specified)Symbol ParameterMin. Typ. Max. Units Test ConditionsON state resistance Tj=25°C⎯ 20 25Rds(on) ON state resistance Tj=150°C (2) ⎯ 38 48 m ΩVin=5V, Ids=8A Idss1 Drain to source leakage current ⎯ 0.1 10Vcc=14V, Tj=25°CIdss2 Drain to source leakage current ⎯0.2 20µAVcc=28V, Tj=25°C V clamp1 Drain to source clamp voltage 1 36 39⎯ Id=20mA V clamp2 Drain to source clamp voltage 2 ⎯ 40 42Id=2A Vin clamp IN to source pin clamp voltage 5.5 6.5 7.5Iin=1mA Vth Input threshold voltage⎯1.7⎯ VId=10mASwitching Electrical CharacteristicsVcc=14V, Resistive load=1.5Ω, Rinput=0Ω, Vin=5V, Tj=25°CSymbol ParameterMin. Typ. Max. Units Test ConditionsTdon Turn-on delay time to 20% 10 30 100 Tr Rise time 20% to 80% 10 30 60 Tdoff Turn-off delay time to 80% 40 150 400 TfFall time 80% to 20% 15 30 60 µsSee figure 2Eon + Eoff Turn on and off energy⎯2⎯mJProtection CharacteristicsSymbol ParameterMin. Typ. Max. Units Test ConditionsTsd Over temperature threshold 150(2)165⎯ °C See figure 1 Isd Over current threshold 32 45 58 A See figure 1OV Over voltage protection ( not active when the device is ON )34 37 ⎯V Vreset IN protection reset threshold⎯ 1.7 ⎯ V Treset Time to reset protection 15(2) 50 200 µs Vin=0VDiagnosticSymbol ParameterMin. Typ. Max. Units Test ConditionsIin, onON state IN positive current 15 32 70Iin, offOFF state IN positive current (after protection latched)150 230 350 µAVin=5V Vin=5V(2) Guaranteed by designLead AssignmentsFunctional Block DiagramAll curves are typical values. Operating in the shaded area is not recommended.IdsVinFigure 1 – Timing diagram Figure 2 – IN rise time & switching definitions Figure 3 – Active clamp waveforms Figure 4 – Active clamp test circuitFigure 5 – Normalized Rds(on) (%) Vs Inputvoltage (V)Vin, input voltage (V)R d s (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (n o r m a l i z e d )50%100%150%200%-50050100150Tj, junction temperature (°C)R d s (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (N o r m a l i z e d )Vin, input voltage (V)I d s , o u t p u t c u r r e n tTj, junction temperature (°C)I s d , n o r m a l i z e d I s h u t d o w n (%)0%50%100%150%200%0123456Figure 6 - Normalized Rds(on) (%) Vs Tj (°C)0%20%40%60%80%100%120%140%-50501001500510********3540012345I limit I shutdown6 Figure7 – Current limitation and currentshutdown Vs Input voltage (V)Figure 8 – Normalized I shutdown (%) Vsjunction temperature (°C)010203040500.1110100051015202530-5050100150I d s , c o n t . O u t p u t c u r r e n t (A )I d s , o u t p u t c u r r e n t (A )Tamb, Ambient temperature (°C) Protection response time (s)Figure 10 – Ids (A) Vs over temperatureprotection response time (s)Figure 9 – Max. continuous output current (A)Vs Ambient temperature (°C)0.010.11101001E-051E-040.0010.010.1110100Figure 11 – Max. ouput current (A)Vs Inductive load (mH)I d s , o u t p u t c u r r e n t (A )Inductive load (mH)Figure 12 – Transient thermal impedance (°C/W)Vs time (s)Z t h , t r a n s i e n t t h e r m a l i m p e d a n c e (°C /W )1101000.0010.010.11Time (s)020406080100120140160180200123456050100150200250-5050100150T s d , o v e r t e m p e r a t u r e s h u t d o w n (°C )I o n , I o f f , i n p u t d u r r e n t (µA )Tj, junction temperature (°C)Vin, input voltage (V)Figure 13 – Input current (µA) On and OffVs junction temperature (°C)Figure 14 – Over temperature shutdown (°C)Vs input voltage (V)Case Outline – TO-220 AB – Automotive Q100 PbF qualifiedCase Outline - D²Pak (SMD-220) - Automotive Q100 PbF MSL1 qualified分销商库存信息:IRIPS1021RPBF IPS1021PBF IPS1021SPBF IPS1021RTRRPBF IPS1021RTRLPBF IPS1021STRRPBF IPS1021STRLPBF。

合集下载

投标产品技术参数表

投标产品技术参数表

单色：600-850卡/小时
内存32MB
14
高清
电视
55寸
屏幕尺寸:55英寸智能电视:是
屏幕分辨率:超高清4K（3840x2160）
HDR显示:支持屏幕比例:16:9
背光源:LED背光方式:侧入式
3D显示:不支持亮度:1000流明以上
刷屏率:60HZ扫描方式:逐行扫描
水平视角（度）Байду номын сангаас±178°垂直视角（度）:±178°
序号
产品名
称
产品规格
产品技术参数
1
电脑
台式机
CPUIntelCorei3-7100处理器
主板IntelB250及以上
内存配置4GDDR42133MHz内存，最大支持32G内存容量；
显卡集成显卡或独立显卡
声卡集成HDAudio，支持5.1声道（提供前2后3共5个音
频接口）
硬盘500GSATA37200rpm硬盘，支持PCIeNMVE固态硬盘；
键盘、鼠标USB键盘、光电鼠标
接口6个USB（至少4*USB3.0）接口，多媒体读卡器，HDMI-
out输出接口
电源150W87Plus节能电源
机箱顶置提手，方便移动，防盗锁孔；
可选相框式底座或俯仰底座，外观美观时尚，并支持壁挂应用
服务及资质证书所投计算机获得国家信息安全服务资质
（安全工程类一级）、制投厂商拥有IT环保处置服务，制造
外部纸架214㎜(8，.4″)?外径搭配76㎜（3″）纸芯
碳带轴心尺寸25.4㎜（1″）-76.2mm(3″)
碳带宽度25.4㎜～114㎜（1″～4.4″）
最大碳带长度300m通讯介面RS232,Centronics
科达招投标软硬件技术参数V13

科达招投标软硬件技术参数V13

【科达招投标软硬件技术参数】[Fred]Version: 1.3 History2022/04/12 V1.0 Fred Doc creation2022/04/14 V1.1 Liu Yong Revised version2022/06/12 V1.2 Fred Revised version, smart pen added2022/06/13 V1.3 Fred Revised version, teacher terminal parameter added目录1 描述 (3)2 硬件系统 (3)2.1 智慧课堂平台服务器 (3)2.2 校园内网交换机 (3)2.3 教室AP (3)2.4 教室充电柜 (3)2.5 教师备授课系统终端 (4)2.6 学生学习系统终端 (5)2.7 学生智能手写笔终端 (6)2.8 教师授课学习终端终端 (6)3 软件系统功能和参数指标 (6)3.1 教师备授课系统 (6)3.2 学生学习系统 (7)3.3 安全管控系统 (8)3.4 教务管理系统 (8)3.5 数据采集统计系统 (8)3.6 第三方软件支持系统 (8)曼黯!描述以下为根据科达ESWI 智慧教育系统2.0 软硬件功能生产的参数指标和功能点，用于招投标方案的标书技术部份。

硬件系统2.1 智慧课堂平台服务器外型：2U 机架式处理器：配置E5-2620v4(2.1GHz/8c)/8GT20ML3内存：配置32GB DDR3 内存,20 个内存插槽，支持高级内存纠错、内存镜像、内存热备等高级功能；硬盘：配置4 块1000G SAT“插拔硬盘，最大支持24 个2.5 寸或者12 个3.5 寸SATA/SAS/SSD 硬盘，可内置2 小盘。

RAID 独立RAID 控制器，支持RAID0,1,3,5。

I/O 扩展槽：主板支持6 个PCI-E 插槽网络：配置双口千兆以太网控制器，支持虚拟化加速、网络加速、负载均衡、冗余等高级功能；电源：服务器专用电源；2.2 校园内网交换机24 个10/100/1000Base-T 支持PoE4 个独立千兆SFP 端口整机最大PoE 供电功率为370W,单端口最大PoE 供电功率为30W支持RIP 动态路由、静态路由、ARP 代理、DHCP 服务器、DHCP 中继、DHCP Snooping支持四元绑定、ARP/IP/DoS 防护、802.1X 认证支持VLAN、QoS、ACL、生成树、组播、IPv62.3 教室AP11AC 双频并发，无线发射功率线T 可调，自适宜信道，802.3af/at 标准PoE 供电频谱导航，胖瘦一体。

Micron 产品数据手册说明书

Micron 产品数据手册说明书

DRAMUpdated Date : 11/06/2006DensityOrganization DescriptionRefreshSpeedPackagePart Number(Pb-free)Sample MP EDO DRAM 5V 51225ns 40L-SOJ M11B416256A-25JP Now Now EDO DRAM 5V 51235ns 44-40L-TSOPII M11B416256A-35TG Now Now EDO DRAM 3.3V 51235ns 40L-SOJ M11L416256SA-35JP Now Now EDO DRAM 3.3V 51235ns 40/44L-TSOPIIM11L416256SA-35TGNowNowSDRAMDensityOrganization DescriptionRefresh SpeedPackagePart Number(Pb-free)Sample MP SDRAM 2.5V 2K 143MHz 50L-TSOPII M12S16161A-7TG Now Now SDRAM 2.5V 2K 143MHz VFBGA M12S16161A-7BG Now Now SDRAM 3.3V 2K 143MHz 50L-TSOPII M12L16161A-7T (I)G Now Now SDRAM 3.3V 2K 200MHz 50L-TSOPII M12L16161A-5T (I)G Now Now SDRAM 3.3V 2K 143MHz VFBGA M12L16161A-7B (I)G Now Now 2M*16SDRAM 3.3V 2K 143MHz 54L-TSOPII M12L32162A-7TG Now Now 1M*32SDRAM 3.3V 2K 143MHz 90-FBGA M12L32321A-7BG Now Now SDRAM 2.5V 4K 100MHz 54L-TSOPII M12S64164A-10TG Now Now SDRAM 3.3V 4K 143MHz 54L-TSOPII M12L64164A-7T (I)G Now Now SDRAM 3.3V 4K 200MHz 54L-TSOPII M12L64164A-5TG Now Now SDRAM 2.5V 4K 143MHz 86L-TSOPII M12S64322A-7TG Now Now SDRAM 3.3V 4K 166MHz 86L-TSOPII M12L64322A-6T (I)G Now Now SDRAM 3.3V 4K 200MHz 86L-TSOPII M12L64322A-5TG Now Now SDRAM 2.5V 4K 143MHz 54L-TSOPII M12S128168A-7TG Now Now SDRAM 2.5V 4K 166MHz 54L-TSOPII M12S128168A-6TG Now Now SDRAM 3.3V 4K 143MHz 54L-TSOPII M12L128168A-7TG Now Now SDRAM 3.3V 4K 166MHz 54L-TSOPII M12L128168A-6TG Now Now SDRAM 2.5V 4K 166MHz 90-FBGA M12S128324A-6BG Now Now SDRAM 2.5V 4K 143MHz 86L-TSOPII M12S128324A-7TG Now Now SDRAM 2.5V 4K 166MHz 86L-TSOPII M12S128324A-6TG Now Now SDRAM 3.3V 4K 143MHz 90-FBGA M12L128324A-7B (I)G Now Now SDRAM 3.3V 4K 166MHz 90-FBGA M12L128324A-6B (I)G Now Now SDRAM 3.3V 4K 143MHz 86L-TSOPII M12L128324A-7T (I)G Now Now SDRAM 3.3V4K166MHz86L-TSOPIIM12L128324A-6T (I)GNowNowDDR SDRAM (Dobule-Date-Rate SDRAM)Density Organization DescriptionRefresh SpeedPackagePart Number(Pb-free)Sample MP DDR-SDRAM 2.5V 4K 166MHz 100-LQFP M13S32321A-6L Now Now DDR-SDRAM 2.5V 4K 200MHz 100-LQFP M13S32321A-5L Now Now DDR-SDRAM 2.5V 4K 166MHz 66L-TSOPII M13S64164A-6TG Q2'07Q3'07DDR-SDRAM 2.5V 4K 200MHz 66L-TSOPII M13S64164A-5TG Q2'07Q3'07DDR-SDRAM 2.5V 4K 166MHz 66L-TSOPII M13S128168A-6TG Now Now DDR-SDRAM 2.5V 4K 200MHz 66L-TSOPII M13S128168A-5TG Now Now DDR-SDRAM 2.5V 4K 166MHz 144-FBGA (12x12mm)M13S128324A-6BG Now Now DDR-SDRAM 2.5V 4K 200MHz 144-FBGA (12x12mm)M13S128324A-5BG Now Now 256Mb16Mx16DDR-SDRAM 2.5V 4K200MHz66L-TSOPIIM13S2561616A-5TGNowNow*Identifier of Pb-free as G or P is shown on outer carton.**Industrial spec : (I) Operating temperature -40ºC ~+85 ºC.2M*3264Mb4Mb*1632Mb4Mb 256Kb*161Mb*1616Mb 128Mb8M*164Mx324M*32128Mb8M*1632Mb 64Mb1M*324M*16Mobile SDRAMDensityOrganizationDescriptionRefresh Speed Package & MCPPart Number(Pb-free)Sample MP Mobile SDRAM 2.5V4K 100MHz 50L-TSOPII M52S16161A-10T (I)G Now Now Mobile SDRAM 2.5V 4K 125MHz 50L-TSOPII M52S16161A-8T (I)G Now Now Mobile SDRAM 1.8V4K 100MHz50L-TSOPIIM52D16161A-10T (I)G Now Now Mobile SDRAM 2.5V 4K 100MHz 54L-TSOPII M52S32162A-10T (I)G Now Now Mobile SDRAM 2.5V 4K 100MHz 54-FBGA M52S32162A-10B (I)G Now Now Mobile SDRAM 2.5V 4K 133MHz 54L-TSOPII M52S32162A-7.5T (I)G Now Now Mobile SDRAM 2.5V 4K 133MHz 54-FBGA M52S32162A-7.5B (I)G Now Now Mobile SDRAM 1.8V 4K 100MHz 54L-TSOPII M52D32162A-10T (I)G Now Now Mobile SDRAM 1.8V 4K 100MHz 54-FBGA M52D32162A-10B (I)G Now Now Mobile SDRAM 1.8V 4K 100MHz 54L-TSOPII M52D32162A-7.5T (I)G Now Now Mobile SDRAM 1.8V 4K 133MHz 54-FBGA M52D32162A-7.5B (I)G Now Now Mobile SDRAM 2.5V 4K 100MHz 90-FBGA M52S32321A-10B (I)G Now Now Mobile SDRAM 2.5V 4K 133MHz 90-FBGA M52S32321A-7.5B (I)G Now Now Mobile SDRAM 1.8V 4K 100MHz 90-FBGA M52D32321A-10B (I)G Now Now Mobile SDRAM 1.8V 4K 133MHz 90-FBGA M52D32321A-7.5B (I)G Now Now Mobile SDRAM 2.5V 4K 100MHz 54L-TSOPII M52S64164A-10T (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 100MHz 54-FBGA M52S64164A-10B (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 133MHz 54L-TSOPII M52S64164A-7.5T (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 133MHz 54-FBGA M52S64164A-7.5B (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 54L-TSOPII M52D64164A-10T (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 54-FBGA M52D64164A-10B (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 54L-TSOPII M52D64164A-7.5T (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 133MHz 54-FBGA M52D64164A-7.5B (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 100MHz 86L-TSOPII M52S64322A-10T (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 100MHz 90-FBGA M52S64322A-10B (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 133MHz 86L-TSOPII M52S64322A-7.5T (I)G Q2 '07Q3 '07Mobile SDRAM 2.5V 4K 133MHz 90-FBGA M52S64322A-7.5B (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 86L-TSOPII M52D64322A-10T (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 90-FBGA M52D64322A-10B (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V 4K 100MHz 86L-TSOPII M52D64322A-7.5T (I)G Q2 '07Q3 '07Mobile SDRAM 1.8V4K133MHz 90-FBGAM52D64322A-7.5B (I)GQ2 '07Q3 '07*Identifier of Pb-free as G or P is shown on outer carton.**Industrial spec : (I) Operating temperature -40ºC ~+85 ºC.64Mb4Mx162Mx32(1)All Mobile functions are included : PASR,TCSR,DS,Deep power down mode.(2)Max. Icc6 : Self-refresh current with full bank in 70 ºC .1Mx16Max. Icc6= 75uA (1.8V)16Mb32Mb2Mx161Mx32。

IR公司_大功率MOS管选型

IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

文档推荐

最新文档